HMC435AMS8GE [HITTITE]
Diversity Switch, 0MHz Min, 4000MHz Max, 1.8dB Insertion Loss-Max, ROHS COMPLIANT, ULTRA SMALL, PLASTIC, SMT, MSOP-86, 8 PIN;
| 型号： | HMC435AMS8GE |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | Diversity Switch, 0MHz Min, 4000MHz Max, 1.8dB Insertion Loss-Max, ROHS COMPLIANT, ULTRA SMALL, PLASTIC, SMT, MSOP-86, 8 PIN 分离技术 隔离技术 射频 微波 |
| 文件： | 总5页 (文件大小：450K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC435AMS8G / 435AMS8GE
v00.0213
SPDT NON-REFLECTIVE
SWITCH, DC - 4 GHz
Typical Applications
Features
The HMC435AMS8G(E) is ideal for:
• Basestations & Repeaters
• Cellular/3G and WiMAX/4G
• Infrastructure and Access Points
• CATV/CMTS
High Isolation: 62 dB @ 1 GHz
52 dB @ 2 GHz
Single Positive Control: 0/+5V
Input IP3: 54 dBm
Non-Reflective Design
Ultra Small MSOP-86 Package: 14.8 mm2
• Test Instrumentation
Functional Diagram
General Description
The HMC435AMS8G(E) is a non-reflective DC to
4 GHz GaAs MESFET SPDT switch in a low cost 8
lead MSOP8G surface mount package with exposed
ground paddle. The switch is ideal for cellular/3G and
WiMAX/4G applications yielding up to 60 dB isolation,
low 0.8 dB insertion loss and +50 dBm input IP3. Power
handling is excellent up through the 3.8 GHz WiMAX
band with the switch offering a P1dB compression of
+30 dBm. On-chip circuitry allows positive voltage
control of 0/+5 Volts at very low DC currents.
Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Max.
Units
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
0.8
1.0
1.2
1.0
1.5
1.8
dB
dB
dB
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
56
46
43
37
30
62
52
48
42
40
dB
dB
dB
dB
dB
Isolation (RFC to RF1/RF2)
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
15
13
11
23
17
14
dB
dB
dB
Return Loss (On State)
Return Loss (Off State)
0.5 - 4.0 GHz
0.5 - 4.0 GHz
16
27
21
30
dB
Input Power for 1 dB Compression
dBm
0.5 - 1.0 GHz
0.5 - 2.5 GHz
0.5 - 4.0 GHz
48
45
41
54
53
51
dBm
dBm
dBm
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
Switching Speed
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
40
60
ns
ns
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1
HMC435AMS8G / 435AMS8GE
v00.0213
SPDT NON-REFLECTIVE
SWITCH, DC - 4 GHz
Insertion Loss
Return Loss
0
0
-5
-10
-15
-20
-25
-30
-1
-2
-3
-4
-5
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
RFC
RF1, RF2 OFF
RF1, RF2 ON
+ 25C
+ 85C
- 40C
Isolation Between
Isolation Between Ports RF1 and RF2
Ports RFC and RF1 / RF2
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-10
-20
-30
-40
-50
-60
-70
-80
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
RF1
RF2
RFC - RF1 ON
RFC - RF2 ON
0.1 and 1 dB Input Compression Point
35
Input Third Order Intercept Point
60
58
56
54
52
50
48
46
44
42
40
30
25
20
15
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
1 dB Compression Point
0.1 dB Compression Point
-40 C
+25 C
+85 C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC435AMS8G / 435AMS8GE
v00.0213
SPDT NON-REFLECTIVE
SWITCH, DC - 4 GHz
Control Voltages
Absolute Maximum Ratings
*Control Input Tolerances are 0.2 Vdc
Control Voltage Range
RF Input Power Vctl = 0/+5V
RF1, RF2 Termination
Junction Temperature
-0.5 to +7.5 Vdc
State
Low
Bias Condition*
0 Vdc @ 5 µA Typical
+5.0 Vdc @ 5 µA Typical
+31 dBm
+26 dBm
High
150 °C
Insertion Loss Path - (channel to ground)
Continuous Pdiss (T = 85 °C)
0.86 W
Truth Table
(derate 13 mW/°C above 85 °C)
Control Input
Signal Path State
RFC to:
RF1
75 °C/W
Thermal Resistance
A
B
Termination Path - (channel to ground)
Low
High
High
Low
Continuous Pdiss (T = 85 °C) 0.42 W
(derate 6.5 mW/°C above 85 °C)
RF2
DC blocks are required at ports RFC, RF1, RF2.
Thermal Resistance 153 °C/W
Storage Temperature
-65 to +150 °C
Do not operate continuously at RF power input greater than
1 dB compression and do not “Hot Switch” power levels
greater than +24 dBm (control = 0/+5 Vdc).
Operating Temperature
-40 to +85 °C
Class 1A
ESD Sensitivity (HBM)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
3
HMC435AMS8G / 435AMS8GE
v00.0213
SPDT NON-REFLECTIVE
SWITCH, DC - 4 GHz
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H435A
XXXX
HMC435AMS8G
HMC435AMS8GE
Low Stress Injection Molded Plastic
Sn/Pb Solder
H435A
XXXX
MSL1 [2]
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Pin Descriptions
Pin Number
Function
A
Description
Interface Schematic
1
See truth and control voltage tables.
See truth and control voltage tables.
2
B
These pins are DC coupled and matched to 50 Ohms.
Blocking capacitors are required.
3, 5, 8
RFC, RF1, RF2
This pin is not connected internally; however, all
data shown herein was measured with this pin
connected to RF/DC ground externally.
4
N/C
Package bottom has exposed metal paddle that must be
connected to PCB RF ground as well.
6, 7
GND
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
4
HMC435AMS8G / 435AMS8GE
v00.0213
SPDT NON-REFLECTIVE
SWITCH, DC - 4 GHz
Evaluation PCB
List of Materials for Evaluation PCB EVAL 105143-HMC435AMS8G[1]
The circuit board used in the application should
be generated with proper RF circuit design
techniques. Signal lines at the RF port should have
50 Ohm impedance and the package ground leads
and backside ground slug should be connected
directly to the ground plane similar to that shown
above. The evaluation circuit board shown above is
available from Hittite Microwave Corporation upon
request.
Item
Description
J1 - J3
J4 - J6
C1 - C3
R1 - R2
U1
PCB Mount SMA RF Connector
DC Pin
100 pF Capacitor, 0402 Pkg.
100 Ohm Resistor, 0402 Pkg.
HMC435AMS8G(E) SPDT Switch
107821 Evaluation PCB
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
5
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