HMC449 [HITTITE]
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 27 - 33 GHz OUTPUT; 砷化镓MMIC X2有源倍频器， 27 - 33 GHz的输出
| 型号： | HMC449 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 27 - 33 GHz OUTPUT |
| 文件： | 总6页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC449
v00.0404
MICROWAVE CORPORATION
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 27 - 33 GHz OUTPUT
Typical Applications
Features
The HMC449 is suitable for:
• Pt to Pt & Multi-Pt Radios
• VSAT Radios
• Military EW, ECM, C3I
• Test Instrumentation
• Space
Output Power: +10 dBm
Wide Input Power Range: -4 to +6 dBm
Fo Isolation: 34 dBc @ Fout= 30 GHz
100 kHz SSB Phase Noise: -132 dBc/Hz
Single Supply: 5V@ 50 mA
Die Size: 1.10 mm x 1.20 mm x 0.1 mm
4
Functional Diagram
General Description
The HMC449 die is a x2 active broadband
frequency multiplier chip utilizing GaAs PHEMT
technology. When driven by a 0 dBm signal the
multiplier provides +10 dBm typical output power
from 28 to 32 GHz.The Fo and 3Fo isolations are
>34 dBc and >17 dBc respectively at 30 GHz.
The HMC449 is ideal for use in LO multiplier
chains yielding a reduced parts count vs.
traditional approaches. The low additive SSB
Phase Noise of -132 dBc/Hz at 100 kHz offset
helps maintain good system noise performance.
All data is with the chip in a 50 ohm test fixture
connected via 0.076mm x 0.0127mm (3mil x 0.5mil)
ribbon bonds of minimal length 0.31mm (<12mils).
Electrical Specifications, TA = +25° C, Vdd= 5.0V, 0 dBm Drive Level
Parameter
Min.
Typ.
Max.
Units
GHz
GHz
dBm
dBc
Frequency Range, Input
Frequency Range, Output
Output Power
13.5 - 16.5
27 - 33
10
6
Fo Isolation (with respect to output level) Fout= 30 GHz
3Fo Isolation (with respect to output level) Fout= 30 GHz
Input Return Loss
34
17
dBc
13
dB
Output Return Loss
9
dB
SSB Phase Noise (100 kHz Offset)
Supply Current (Idd)
-132
50
dBc/Hz
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
4 - 34
HMC449
v00.0404
MICROWAVE CORPORATION
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 27 - 33 GHz OUTPUT
Output Power vs.
TemGpearaAtusreM@M0ICdBSmUDBri-vHeALeRvMelONICALLY OPuUtpMuPt PEoDweMr vIXs.EDRrive1L7ev-e2l 5 GHz
15
14
13
12
11
10
9
8
7
6
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-6 dBm
-4 dBm
-2 dBm
0 dBm
+2 dBm
+4 dBm
+6 dBm
5
4
3
2
1
0
+25 C
+85 C
-55 C
4
26
27
28
29
30
31
32
33
34
26
27
28
29
30
31
32
33
34
OUTPUT FREQUENCY (GHz)
OUTPUT FREQUENCY (GHz)
Output Power vs.
Supply Voltage @ 0 dBm Drive Level
Isolation @ 0 dBm Drive Level
15
14
13
12
11
10
9
15
10
5
Fo
0
2Fo
3Fo
-5
8
7
6
5
4
3
2
1
0
-10
-15
-20
-25
-30
Vdd=4.5V
Vdd=5.0V
Vdd=5.5V
26
27
28
29
30
31
32
33
34
26
27
28
29
30
31
32
33
34
OUTPUT FREQUENCY (GHz)
OUTPUT FREQUENCY (GHz)
Pin vs. Pout @ 3 Frequencies
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
Fout=27 GHz
Fout=30 GHz
Fout=33 GHz
0
-1
-2
-3
-4
-5
-6 -5 -4 -3 -2 -1
0
1
2
3
4
5
6
7
8
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
4 - 35
HMC449
v00.0404
MICROWAVE CORPORATION
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 27 - 33 GHz OUTPUT
Output Return Loss vs.Temperature
0
Input Return Loss vs.Temperature
0
+25 C
+85 C
+25 C
+85 C
-55 C
-5
-5
-55 C
-10
-10
-15
-20
-15
-20
4
13
13.5
14
14.5
15
15.5
16
16.5
17
26
27
28
29
30
31
32
33
34
FREQUENCY (GHz)
FREQUENCY (GHz)
SSB Phase Noise Performance,
Fout = 26.4 GHz, Pin = 0 dBm
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
102
103
104
105
106
107
OFFSET FREQUENCY (Hz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
4 - 36
HMC449
v00.0404
MICROWAVE CORPORATION
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 27 - 33 GHz OUTPUT
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
RF Input (Vcc= +5V)
Supply Voltage (Vdd)
Channel Temperature
+20 dBm
+6.0 Vdc
175 °C
Vdd (Vdc)
4.5
Idd (mA)
49
50
51
5.0
Continuous Pdiss (T= 85 °C)
(derate 8.3 mW/°C above 85 °C)
5.5
744 mW
Note: Multiplier will operate over full voltage
range shown above.
Thermal Resistance
(junction to die bottom)
121 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
4
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE.
4. TYPICAL BOND SPACING IS .006” CENTER TO CENTER.
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METALIZATION: GOLD
7. BACKSIDE METAL IS GROUND.
8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
4 - 37
HMC449
v00.0404
MICROWAVE CORPORATION
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 27 - 33 GHz OUTPUT
Pad Description
Pad Number
Function
Description
Interface Schematic
Pin is AC coupled and matched to 50 Ohm
from 13 - 16 GHz.
1
RF IN
2, 3
Vdd
Supply voltage 5V 0.5V.
4
Pin is AC coupled and matched to 50 Ohm
from 26 - 32 GHz.
4
RF OUT
GND
Die bottom must be connected to RF ground.
Assembly Diagram
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
4 - 38
HMC449
v00.0404
MICROWAVE CORPORATION
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 27 - 33 GHz OUTPUT
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
4
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature
of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip
to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached
directly to the ground plane
eutectically or with conductive
3
mil Ribbon Bond
epoxy (see HMC general
Handling, Mounting, Bonding
Note).
3
mil Ribbon Bond
50 Ohm Microstrip transmission
lines on 0.127mm (5 mil) thick
alumina thin film substrates are
recommended for bringing RF to
and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina
thin film substrates must be
used, the die should be raised
0.150mm (6 mils) so that the
surface of the die is coplanar
with the surface of the substrate.
One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm
(6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate
spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to
minimize inductance on RF, LO & IF ports.
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive
epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
4 - 39
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