HMC455LP3TR [HITTITE]

Narrow Band Medium Power Amplifier,;
HMC455LP3TR
型号: HMC455LP3TR
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
描述:

Narrow Band Medium Power Amplifier,

射频和微波 射频放大器 微波放大器
文件: 总6页 (文件大小:257K)
中文:  中文翻译
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HMC455LP3 / 455LP3E  
v02.0605  
InGaP HBT ½ Watt High IP3  
AMPLIFIER, 1.7 - 2.5 GHz  
Typical Applications  
Features  
This amplifier is ideal for high linearity applications:  
• Multi-Carrier Systems  
• GSM, GPRS & EDGE  
• CDMA & WCDMA  
Output IP3: +42 dBm  
Gain: 13 dB  
56% PAE @ +28 dBm Pout  
+19 dBm W-CDMA Channel Power @ -45 dBc ACP  
3x3 mm QFN SMT Package  
• PHS  
11  
Functional Diagram  
General Description  
The HMC455LP3 & HMC455LP3E are high output  
IP3 GaAs InGaP Heterojunction Bipolar Transistor  
(HBT) ½ watt MMIC amplifiers operating between 1.7  
and 2.5 GHz. Utilizing a minimum number of external  
components the amplifier provides 13 dB of gain and  
+28 dBm of saturated power at 56% PAE from a single  
+5 Vdc supply voltage. The high output IP3 of +42  
dBm coupled with the low VSWR of 1.4:1 make the  
HMC455LP3&HMC455LP3Eidealdriveramplifiersfor  
PCS/3G wireless infrastructures. A low cost, leadless  
3x3 mm QFN surface mount package (LP3) houses  
the linear amplifier. The LP3 provides an exposed  
base for excellent RF and thermal performance.  
Electrical Specifications, TA = +25° C, Vs= +5V  
Parameter  
Min.  
Typ.  
1.7 - 1.9  
13.5  
0.012  
13  
Max.  
Min.  
10.5  
Typ.  
1.9 - 2.2  
13  
Max.  
0.02  
Min.  
9
Typ.  
2.2 - 2.5  
11.5  
0.012  
10  
Max.  
0.02  
Units  
GHz  
dB  
Frequency Range  
Gain  
11.5  
Gain Variation Over Temperature  
Input Return Loss  
0.02  
0.012  
15  
dB / °C  
dB  
Output Return Loss  
10  
18  
15  
dB  
Output Power for 1dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Noise Figure  
24  
37  
27  
24.5  
39  
27.5  
28  
23  
37  
26  
dBm  
dBm  
dBm  
dB  
28.5  
40  
27  
42  
40  
7
6
6
Supply Current (Icq)  
150  
150  
150  
mA  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 234  
HMC455LP3 / 455LP3E  
v02.0605  
InGaP HBT ½ Watt High IP3  
AMPLIFIER, 1.7 - 2.5 GHz  
Broadband Gain & Return Loss  
Gain vs. Temperature  
20  
15  
10  
5
17  
14  
S21  
S11  
S22  
0
-5  
11  
-10  
-15  
-20  
-25  
11  
+25C  
+85C  
-40C  
8
5
1.5 1.6 1.7 1.8 1.9  
2
2.1 2.2 2.3 2.4 2.5  
1
1.5  
2
2.5  
3
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Input Return Loss vs. Temperature  
Output Return Loss vs. Temperature  
0
0
+25C  
+85C  
-40C  
+25C  
+85C  
-40C  
-5  
-10  
-15  
-20  
-25  
-30  
-5  
-10  
-15  
-20  
-25  
1.5 1.6 1.7 1.8 1.9  
2
2.1 2.2 2.3 2.4 2.5  
1.5 1.6 1.7 1.8 1.9  
2
2.1 2.2 2.3 2.4 2.5  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
P1dB vs. Temperature  
Psat vs. Temperature  
30  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
28  
26  
24  
22  
20  
+25C  
+85C  
-40C  
+25C  
+85C  
-40C  
1.7  
1.8  
1.9  
2
2.1  
2.2  
2.3  
2.4  
2.5  
1.7  
1.8  
1.9  
2
2.1  
2.2  
2.3  
2.4  
2.5  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC  
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 235  
HMC455LP3 / 455LP3E  
v02.0605  
InGaP HBT ½ Watt High IP3  
AMPLIFIER, 1.7 - 2.5 GHz  
Output IP3 vs. Temperature  
Noise Figure vs. Temperature  
44  
10  
9
42  
40  
38  
8
7
6
5
36  
34  
32  
30  
+25C  
+85C  
-40C  
4
+25C  
3
2
1
0
+85C  
-40C  
11  
1.7  
1.8  
1.9  
2
2.1  
2.2  
2.3  
2.4  
2.5  
1.7  
1.8  
1.9  
2
2.1  
2.2  
2.3  
2.4  
2.5  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Power Compression @ 1.95 GHz  
Power Compression @ 2.15 GHz  
60  
60  
50  
50  
Pout  
Gain  
PAE  
Pout  
Gain  
PAE  
40  
30  
20  
10  
0
40  
30  
20  
10  
0
-10  
-5  
0
5
10  
15  
20  
-10  
-5  
0
5
10  
15  
20  
INPUT POWER (dBm)  
INPUT POWER (dBm)  
Gain, Power & IP3 vs.  
Supply Voltage @ 1.95 GHz  
Reverse Isolation vs. Temperature  
0
44  
40  
36  
32  
28  
-5  
+25C  
+85C  
-40C  
-10  
-15  
-20  
-25  
-30  
24  
Gain  
P1dB  
20  
16  
Psat  
IP3  
12  
8
1.5 1.6 1.7 1.8 1.9  
2
2.1 2.2 2.3 2.4 2.5  
4.5  
4.7  
5
5.2  
5.5  
FREQUENCY (GHz)  
Vs (V)  
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC  
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 236  
HMC455LP3 / 455LP3E  
v02.0605  
InGaP HBT ½ Watt High IP3  
AMPLIFIER, 1.7 - 2.5 GHz  
ACPR vs. Supply Voltage @ 1.96 GHz  
CDMA 2000, 9 Channels Forward  
ACPR vs. Supply Voltage @ 2.14 GHz  
W-CDMA, 64 DPCH  
-40  
-30  
-35  
-45  
-50  
-55  
-60  
-65  
CDMA2000 Rev. 8  
Frequency: 1.96 GHz  
Integration BW: 1.228 MHz  
Forward Link, SR1, 9 Channels  
WCDMA  
Frequency : 2.14 GHz  
Integration BW: 3.84 MHz  
64 DPCH  
-40  
-45  
-50  
-55  
-60  
-65  
4.5V  
4.5V  
5V  
5V  
5.5V  
5.5V  
11  
Source ACPR  
17 19  
Source ACPR  
5
7
9
11  
13  
15  
21  
5
7
9
11  
13  
15  
17  
19  
21  
Channel Output Power (dBm)  
Channel Output Power (dBm)  
Absolute Maximum Ratings  
Collector Bias Voltage (Vcc)  
RF Input Power (RFIN)(Vs = +5Vdc)  
Junction Temperature  
+6.0 Vdc  
+25 dBm  
150 °C  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
Continuous Pdiss (T = 85 °C)  
(derate 16 mW/°C above 85 °C)  
1.04 W  
Application Circuit  
Thermal Resistance  
(junction to ground paddle)  
63 °C/W  
Storage Temperature  
Operating Temperature  
-65 to +150 °C  
-40 to +85 °C  
Recommended Component Values  
L1  
C1  
8.2 nH  
2.2 µF  
3.0 pF  
0.9 pF  
100 pF  
TL1  
TL2  
50 Ohm  
0.18”  
TL3  
50 Ohm  
0.13”  
TL4  
50 Ohm  
0.04”  
4°  
Impedance  
50 Ohm  
0.33”  
34°  
C2, C3  
C4  
Physical Length  
Electrical Length  
19°  
13.5°  
C5  
PCB Material: 10 mil Rogers 4350, Er = 3.48  
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC  
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 237  
HMC455LP3 / 455LP3E  
v02.0605  
InGaP HBT ½ Watt High IP3  
AMPLIFIER, 1.7 - 2.5 GHz  
Outline Drawing  
11  
NOTES:  
1. LEADFRAME MATERIAL: COPPER ALLOY  
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]  
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE  
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.  
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.  
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.  
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.  
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.  
Package Information  
Part Number  
Package Body Material  
Lead Finish  
MSL Rating  
MSL1 [1]  
Package Marking [3]  
455  
XXXX  
HMC455LP3  
Low Stress Injection Molded Plastic  
Sn/Pb Solder  
455  
XXXX  
MSL1 [2]  
HMC455LP3E  
RoHS-compliant Low Stress Injection Molded Plastic  
100% matte Sn  
[1] Max peak reflow temperature of 235 °C  
[2] Max peak reflow temperature of 260 °C  
[3] 4-Digit lot number XXXX  
Pin Descriptions  
Pin Number  
Function  
Description  
Interface Schematic  
1, 2, 4 - 9,  
11 - 16  
N/C  
This pin may be connected to RF ground.  
This pin is AC coupled.  
An off chip series matching capacitor is required.  
3
RFIN  
10  
RFOUT  
RF output and DC Bias for the output stage.  
GND  
Package bottom must be connected to RF/DC ground.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 238  
HMC455LP3 / 455LP3E  
v02.0605  
InGaP HBT ½ Watt High IP3  
AMPLIFIER, 1.7 - 2.5 GHz  
Evaluation PCB  
11  
J3  
Pin Number  
1, 2, 3  
Description  
GND  
Vs  
4, 5, 6  
List of Materials for Evaluation PCB 106058 [1]  
The circuit board used in the final application should  
use RF circuit design techniques. Signal lines  
should have 50 ohm impedance while the package  
ground leads and exposed paddle should be con-  
nected directly to the ground plane similar to that  
shown. A sufficient number of VIA holes should be  
used to connect the top and bottom ground planes.  
The evaluation board should be mounted to an  
appropriate heat sink. The evaluation circuit board  
shown is available from Hittite upon request.  
Item  
J1 - J2  
J3  
Description  
PCB Mount SMA Connector  
2 mm DC Header  
C1  
2.2 μF Capacitor, Tantalum  
3.0 pF Capacitor, 0402 Pkg.  
0.9 pF Capacitor, 0402 Pkg.  
100 pF Capacitor, 0402 Pkg.  
8.2 nH Inductor, 0402 Pkg.  
C2, C3  
C4  
C5  
L1  
HMC455LP3 / HMC455LP3E  
Power Amplifier  
U1  
[2]  
PCB  
106492 Evaluation PCB, 10 mils  
[1] Reference this number when ordering complete evalution PCB  
[2] Circuit Board Material: Rogers 4350, Er = 3.48  
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC  
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 239  

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