HMC460_06 [HITTITE]
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz; 的GaAs PHEMT MMIC低噪声放大器， DC - 20.0 GHz的
| 型号： | HMC460_06 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz |
| 文件： | 总8页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC460
v02.0704
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20.0 GHz
1
Typical Applications
The HMC460 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
Features
Noise Figure: 2.5 dB @ 10 GHz
Gain: 14 dB @ 10 GHz
P1dB Output Power: +16 dBm @ 10 GHz
Supply Voltage: +8.0V @ 60 mA
50 Ohm Matched Input/Output
3.12 mm x 1.63 mm x 0.1 mm
• Test Instrumentation
Functional Diagram
General Description
The HMC460 is a GaAs MMIC PHEMT Low Noise
Distributed Amplifier die which operates between DC
and 20 GHz. The amplifier provides 14 dB of gain,
2.5 dB noise figure and +16 dBm of output power at
1 dB gain compression while requiring only 60 mA
from a +8V supply. The HMC460 amplifier can easily
be integrated into Multi-Chip-Modules (MCMs) due to
its small size. All data is with the chip in a 50 Ohm test
fixture connected via 0.025mm (1 mil) diameter wire
bonds of minimal length 0.31mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd= 8V, Idd= 60 mA*
Parameter
Frequency Range
Min.
Typ.
DC - 6.0
14
Max.
Min.
Typ.
6.0 - 18.0
14
Max.
Min.
11
Typ.
18.0 - 20.0
13
Max.
Units
GHz
dB
Gain
12
12
Gain Flatness
0.5
0.15
0.01
2.5
0.25
0.01
3.0
dB
Gain Variation Over Temperature
Noise Figure
0.008
4.0
0.016
5.0
0.02
3.5
0.02
4.0
dB/ °C
dB
Input Return Loss
17
22
15
dB
Output Return Loss
17
15
15
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
14
17
13
16
12
15
dBm
dBm
dBm
18
18
17
27.5
28
27
Supply Current
60
60
60
mA
(Idd) (Vdd= 8V, Vgg1= -0.9V Typ.)
* Adjust Vgg between -2 to 0V to achieve Idd= 60 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC460
v02.0704
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20.0 GHz
1
Broadband Gain & Return Loss
Gain vs. Temperature
20
15
10
5
20
18
16
14
12
10
S21
S11
S22
0
-5
-10
-15
-20
-25
-30
-35
8
6
4
2
0
+25 C
+85 C
-55 C
0
2
4
6
8
10 12 14 16 18 20 22 24 26
FREQUENCY (GHz)
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-5
+25 C
+85 C
-55 C
+25 C
+85 C
-55 C
-10
-15
-20
-25
-30
-35
-10
-15
-20
-25
-30
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Low Frequency Gain & Return Loss
10
25
20
15
10
9
8
7
6
5
4
3
2
1
0
+25 C
+85 C
-55 C
5
S21
S11
S22
0
-5
-10
-15
-20
-25
-30
-35
-40
0
2
4
6
8
10 12 14 16 18 20 22
0.00001 0.0001
0.001
0.01
0.1
1
10
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 95
HMC460
v02.0704
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20.0 GHz
1
P1dB vs. Temperature
Psat vs. Temperature
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
25
24
23
22
21
20
19
18
17
16
+25 C
+85 C
-55 C
15
+25 C
+85 C
-55 C
14
13
12
11
10
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & Noise Figure
vs. Supply Voltage @ 10 GHz, Fixed Vgg1
Output IP3 vs. Temperature
5
32
31
30
29
28
27
26
25
24
23
18
4.5
4
17
16
15
14
13
12
11
10
9
3.5
3
2.5
2
1.5
1
22
+25 C
+85 C
-55 C
21
20
19
18
GAIN
P1dB
NOISE FIGURE
0.5
0
8
0
2
4
6
8
10 12 14 16 18 20 22
7.5
7.75
8
8.25
8.5
FREQUENCY (GHz)
Vdd (Vdc)
Reverse Isolation vs. Temperature
0
-10
-20
-30
-40
-50
-60
-70
+25 C
+85 C
-55 C
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC460
v02.0704
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20.0 GHz
1
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+9.0 Vdc
Vdd (V)
+7.5
Idd (mA)
Gate Bias Voltage (Vgg1)
-2.0 to 0 Vdc
59
60
62
RF Input Power (RFin)(Vdd = +8.0 Vdc) +10 dBm
+8.0
Channel Temperature
175 °C
2.17 W
+8.5
Continuous Pdiss (T = 85 °C)
(derate 24 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
41.5 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
Die Packaging Information [1]
Standard
Alternate
GP-1
[2]
7. BOND PAD METALIZATION: GOLD
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 97
HMC460
v02.0704
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20.0 GHz
1
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
This pad is DC coupled and matched to 50 Ohms
from DC - 20.0 GHz
1
RFIN
Power supply voltage for the amplifier.
External bypass capacitors are required
2
Vdd
Low frequency termination. Attach bypass capacitor per
application circuit herein.
3
4
ACG1
This pad is DC coupled and matched to 50 Ohms
from DC - 20.0 GHz
RFOUT
Low frequency termination. Attach bypass capacitor per
application circuit herein.
5
6
ACG2
Vgg
Gate control for amplifier. Adjust to achieve Idd= 60 mA.
Die bottom must be connected to RF/DC ground.
Die
Bottom
GND
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 98
HMC460
v02.0704
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20.0 GHz
1
Assembly Diagram
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 99
HMC460
v02.0704
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20.0 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
0.102mm (0.004”) Thick GaAs MMIC
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Wire Bond
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against > 250V
ESD strikes.
0.150mm (0.005”) Thick
Moly Tab
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
up.
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with
vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a
tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290
deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than
3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be
started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm
(12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 100
HMC460
v02.0704
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20.0 GHz
1
Notes:
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 101
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