HMC474SC70TR [HITTITE]
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| 型号： | HMC474SC70TR |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | 暂无描述 射频和微波 射频放大器 微波放大器 |
| 文件： | 总6页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC474SC70 / 474SC70E
v00.0607
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
5
Typical Applications
Features
The HMC474SC70(E) is an ideal for:
• Cellular / PCS / 3G
Gain: 15 dB
P1dB Output Power: +8 dBm
Output IP3: +20 dBm
• WiBro / WiMAX / 4G
• Fixed Wireless & WLAN
Cascadable 50 Ohm I/Os
Single Supply: +3V to +10V
Industry Standard SC70 Package
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
General Description
The HMC474SC70(E) is a general purpose SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifier covering DC to 6 GHz. This
industry standard SC70 packaged amplifier can be
used as a cascadable 50 Ohm RF/IF gain stage with
up to +8 dBm output power. The HMC474SC70(E)
offers 15 dB of gain with a +20 dBm output IP3 at 850
MHz while requiring only 25 mA from a single positive
supply as low as +3V. The Darlington topology results
in reduced sensitivity to normal process variations and
excellent gain stability over temperature while requiring
a minimal number of external bias components.
Electrical Specifications, Vs= 5V, Rbias= 110 Ohm, TA = +25° C
Parameter
Min.
Typ.
Max.
Units
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
12
10
7
15
13
10
dB
dB
dB
Gain
Gain Variation Over Temperature
Input Return Loss
DC - 6.0 GHz
0.01
0.015
dB/ °C
DC - 5.0 GHz
5.0 - 6.0 GHz
15
14
dB
dB
DC - 5.0 GHz
5.0 - 6.0 GHz
15
12
dB
dB
Output Return Loss
Reverse Isolation
DC - 6.0 GHz
17
dB
0.5 - 4.0 GHz
5.0 - 6.0 GHz
5
3
8
6
dBm
dBm
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
DC - 5.0 GHz
5.0 - 6.0 GHz
20
18
dBm
dBm
DC - 5.0 GHz
5.0 - 6.0 GHz
3
3.9
dB
dB
Noise Figure
Supply Current (Icq)
25
33
mA
Note: Data taken with broadband bias tee on device output.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 70
HMC474SC70 / 474SC70E
v00.0607
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
5
Broadband Gain & Return Loss
Gain vs. Temperature
20
15
10
5
20
18
16
14
12
10
8
0
S21
S11
S22
-5
-10
-15
-20
-25
6
4
2
0
+25 C
+85 C
-40 C
0
1
2
3
4
5
6
7
8
6
6
0
1
2
3
4
5
6
6
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-5
+25 C
+25 C
+85 C
-40 C
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
+85 C
-40 C
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
8
7
+25 C
+85 C
-40 C
-5
6
+25 C
+85 C
-40 C
5
4
3
2
1
0
-10
-15
-20
-25
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 71
HMC474SC70 / 474SC70E
v00.0607
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
5
P1dB vs. Temperature
Psat vs. Temperature
16
14
12
10
8
16
14
12
10
8
6
6
+25 C
+85 C
-40 C
4
4
+25 C
+85 C
-40 C
2
2
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & OIP3 vs. Supply Voltage
for Rs= 110 Ohms @ 850 MHz
Output IP3 vs. Temperature
26
24
22
20
18
22
20
18
16
14
12
10
8
16
+25 C
+85 C
6
-40 C
14
Gain
P1dB
4
2
Psat
12
10
OIP3
0
0
1
2
3
4
5
6
4.75
5
5.25
FREQUENCY (GHz)
Vs (Vdc)
Icc vs. Vcc Over Temperature for
Fixed Vs= 5V, RBIAS= 110 Ohms
28
27
26
25
24
23
22
21
20
+85 C
+25 C
-40 C
2
2.1
2.2
2.3
2.4
2.5
2.6
Vcc (V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 72
HMC474SC70 / 474SC70E
v00.0607
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
5
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFin)(Vcc = +2.4 Vdc)
Junction Temperature
+6.0 Vdc
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
35 mA
+5 dBm
150 °C
Continuous Pdiss (T = 85 °C)
(derate 4.3 mW/°C above 85 °C)
0.280 W
Thermal Resistance
(junction to lead)
232 °C/W
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150 °C
-40 to +85 °C
Class 1B
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD MATERIAL: COPPER ALLOY
3. LEAD PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking
474
HMC474SC70
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1 [2]
HMC474SC70E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
474
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 73
HMC474SC70 / 474SC70E
v00.0607
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
5
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 2, 4, 5
GND
RFIN
These pins must be connected to RF/DC ground.
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
6
RFOUT
RF output and DC Bias (Vcc) for the output stage.
Application Circuit
Recommended Bias Resistor Values
for Icc= 25 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
3V
5V
6V
8V
10V
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
RBIAS VALUE
30 Ω
1/8 W
110 Ω
1/8 W
150 Ω
1/4 W
240 Ω
1/2 W
300 Ω
1/2 W
RBIAS POWER RATING
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
900
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5200
6.8 nH
100 pF
5500
3.3 nH
100 pF
L1
270 nH
0.01 μF
56 nH
100 pF
C1, C2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 74
HMC474SC70 / 474SC70E
v00.0607
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
5
Evaluation PCB
List of Materials for Evaluation PCB 117596 [1]
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads should be connected directly to the
ground plane similar to that shown. A sufficient
number of via holes should be used to connect
the top and bottom ground planes. The evaluation
board should be mounted to an appropriate heat
sink. The evaluation circuit board shown is available
from Hittite upon request.
Item
J1 - J2
J3 - J4
C1 - C3
C4
Description
PCB Mount SMA Connector
DC Pin
100 pF Capacitor, 0402 Pkg.
1000 pF Capacitor, 0603 Pkg.
2.2 μF Capacitor, Tantalum
110 Ohm Resistor, 1210 Pkg.
18 nH Inductor, 0603 Pkg.
HMC474SC70(E)
C5
R1
L1
U1
[2]
PCB
117360 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 75
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