HMC478SC70ETR [HITTITE]
Wide Band Low Power Amplifier,;
| 型号： | HMC478SC70ETR |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | Wide Band Low Power Amplifier, |
| 文件： | 总6页 (文件大小：992K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC478SC70 / 478SC70E
v01.0811
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Typical Applications
The HMC478SC70(E) is an ideal for:
Features
P1dB Output Power: +17 dBm
8
• Cellular / PCS / 3G
Gain: 23 dB
• WiBro / WiMAX / 4G
Output IP3: +31 dBm
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Industry Standard SC70 Package
Functional Diagram
General Description
The HMC478SC70(E) is
a SiGe Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering DC to 4 GHz. This industry
standard SC70 packaged amplifier can be used as
a cascadable 50 Ohm RF/IF gain stage as well as
a LO or PA driver with up to +17 dBm output power.
The HMC478SC70(E) offers 23 dB of gain with a
+31 dBm output IP3 at 850 MHz while requiring only
62 mA from a single positive supply. The Darlington
topology results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
Electrical Specifications, Vs= 5V, Rbias= 18 Ohm, TA = +25° C
Parameter
Min.
Typ.
Max.
0.02
Units
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
20
16
13
11
24
20
17
15
dB
dB
dB
dB
Gain
Gain Variation Over Temperature
Input Return Loss
DC - 4 GHz
0.015
dB/ °C
DC - 3.0 GHz
3.0 - 4.0 GHz
15
17
dB
dB
DC - 3.0 GHz
3.0 - 4.0 GHz
15
13
dB
dB
Output Return Loss
Reverse Isolation
DC - 4 GHz
20
dB
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
13
11
9
16
15
12
dBm
dBm
dBm
Output Power for 1 dB Compression (P1dB)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
31
28
25
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
DC - 3.0 GHz
3.0 - 4.0 GHz
2.5
2.8
dB
dB
Noise Figure
Supply Current (Icq)
62
82
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 1
HMC478SC70 / 478SC70E
v01.0811
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
30
20
10
0
30
8
25
20
S21
S11
S22
15
+25C
-10
-20
-30
10
+85C
-40C
5
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-5
S21
S11
S22
+25C
+85C
-40C
-10
-10
-15
-20
-25
-30
-15
-20
-25
-30
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
-5
8
+25C
+85C
-40C
-10
-15
-20
-25
-30
+25C
+85C
-40C
6
4
2
0
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 2
HMC478SC70 / 478SC70E
v01.0811
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
P1dB vs. Temperature
Psat vs. Temperature
24
24
8
20
16
20
16
12
12
+25C
+85C
-40C
+25C
+85C
-40C
8
4
0
8
4
0
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & Output IP3 vs. Supply
Voltage for Rs = 18 Ohms @ 850 MHz
Output IP3 vs. Temperature
35
34
32
30
28
26
24
22
20
18
16
30
25
+25C
+85C
-40C
20
15
10
Gain
P1dB
Psat
IP3
14
12
10
8
0
1
2
3
4
5
4.75
5
5.25
Vs (Vdc)
FREQUENCY (GHz)
Icc vs. Vcc Over Temperature for
Fixed Vs= 5V, Rbias= 18 Ohms
80
75
70
65
60
55
50
45
40
+85C
+25C
-40C
3.60
3.70
3.80
3.90
4.00
4.10
4.20
Vcc (V)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 3
HMC478SC70 / 478SC70E
v01.0811
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFIN)(Vcc = +2.4 Vdc)
Junction Temperature
+6 Vdc
8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
100 mA
+5 dBm
150 °C
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C)
0.583 W
Thermal Resistance
(junction to lead)
111.5 °C/W
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150 °C
-40 to +85 °C
Class 1C
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD MATERIAL: COPPER ALLOY
3. LEAD PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking
478
HMC478SC70
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1 [2]
HMC478SC70E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
478E
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 4
HMC478SC70 / 478SC70E
v01.0811
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
8
1, 2, 4, 5
GND
RFIN
These pins must be connected to RF/DC ground.
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
6
RFOUT
RF output and DC Bias (Vcc) for the output stage.
Application Circuit
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
5V
6V
8V
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. Rbias provides DC bias stability over temperature.
Rbias Value
18 Ω
1/8 W
35 Ω
1/4 W
67 Ω
1/2 W
Rbias Power rating
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
900
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
L1
270 nH
0.01 µF
56 nH
100 pF
C1, C2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 5
HMC478SC70 / 478SC70E
v01.0811
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Evaluation PCB
8
List of Materials for Evaluation PCB 118039 [1]
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads should be connected directly to the ground
plane similar to that shown. A sufficient number
of via holes should be used to connect the top
and bottom ground planes. The evaluation board
should be mounted to an appropriate heat sink. The
evaluation circuit board shown is available from
Hittite upon request.
Item
J1 - J2
J3 - J4
C1 - C3
C4
Description
PCB Mount SMA Connector
DC Pin
100 pF Capacitor, 0402 Pkg.
1000 pF Capacitor, 0603 Pkg.
2.2 µF Capacitor, Tantalum
18 Ohm Resistor, 1210 Pkg.
18 nH Inductor, 0603 Pkg.
HMC478SC70(E)
C5
R1
L1
U1
[2]
PCB
117360 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 6
相关型号：
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HITTITE
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