HMC478SC70E [HITTITE]

SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz; 的SiGe HBT增益模块放大器MMIC ， DC - 4 GHz的


型号：	HMC478SC70E
厂家：	HITTITE MICROWAVE CORPORATION
描述：	SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz 的SiGe HBT增益模块放大器MMIC ， DC - 4 GHz的射频和微波射频放大器微波放大器
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HMC478SC70 / 478SC70E

v00.0607

SiGe HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 4 GHz

Typical Applications

The HMC478SC70(E) is an ideal for:

Features

P1dB Output Power: +17 dBm

• Cellular / PCS / 3G

Gain: 23 dB

• WiBro / WiMAX / 4G

Output IP3: +31 dBm

• Fixed Wireless & WLAN

• CATV, Cable Modem & DBS

• Microwave Radio & Test Equipment

Cascadable 50 Ohm I/Os

Single Supply: +5V to +8V

Industry Standard SC70 Package

Functional Diagram

General Description

The HMC478SC70(E) is a SiGe Heterojunction

Bipolar Transistor (HBT) Gain Block MMIC SMT

ampliﬁer covering DC to 4 GHz. This industry stan-

dard SC70 packaged ampliﬁer can be used as a cas-

cadable 50 Ohm RF/IF gain stage as well as a LO

or PA driver with up to +17 dBm output power. The

HMC478SC70(E) offers 23 dB of gain with a +31 dBm

output IP3 at 850 MHz while requiring only 62 mA

from a single positive supply. The Darlington topol-

ogy results in reduced sensitivity to normal process

variations and excellent gain stability over tempera-

ture while requiring a minimal number of external bias

components.

Electrical Specifications, Vs= 5V, Rbias= 18 Ohm, T_A= +25° C

Parameter

Min.

Typ.

Max.

0.02

Units

DC - 1.0 GHz

1.0 - 2.0 GHz

2.0 - 3.0 GHz

3.0 - 4.0 GHz

Gain

Gain Variation Over Temperature

Input Return Loss

DC - 4.0 GHz

0.015

dB/ °C

DC - 3.0 GHz

3.0 - 4.0 GHz

DC - 3.0 GHz

3.0 - 4.0 GHz

Output Return Loss

Reverse Isolation

DC - 4.0 GHz

0.5 - 2.0 GHz

2.0 - 3.0 GHz

3.0 - 4.0 GHz

dBm

Output Power for 1 dB Compression (P1dB)

0.5 - 2.0 GHz

2.0 - 3.0 GHz

3.0 - 4.0 GHz

dBm

Output Third Order Intercept (IP3)

(Pout= 0 dBm per tone, 1 MHz spacing)

DC - 3.0 GHz

3.0 - 4.0 GHz

2.5

2.8

Noise Figure

Supply Current (Icq)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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HMC478SC70 / 478SC70E

v00.0607

SiGe HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 4 GHz

Broadband Gain & Return Loss

Gain vs. Temperature

S21

S11

S22

-5

-10

-15

-20

-25

-30

+25C

+85C

-40C

FREQUENCY (GHz)

Input Return Loss vs. Temperature

Output Return Loss vs. Temperature

-5

S21

S11

S22

+25C

+85C

-40C

-10

-15

-20

-25

-30

-15

-20

-25

-30

FREQUENCY (GHz)

Reverse Isolation vs. Temperature

Noise Figure vs. Temperature

-5

+25C

+85C

-40C

+25C

+85C

-40C

-10

-15

-20

-25

-30

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

5 - 101

HMC478SC70 / 478SC70E

v00.0607

SiGe HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 4 GHz

P1dB vs. Temperature

Psat vs. Temperature

+25C

+85C

-40C

+25C

+85C

-40C

FREQUENCY (GHz)

Gain, Power & OIP3 vs. Supply Voltage

for Rs = 18 Ohms @ 850 MHz

Output IP3 vs. Temperature

Gain

+25C

+85C

-40C

P1dB

Psat

OIP3

4.75

5.25

FREQUENCY (GHz)

Vs (Vdc)

Icc vs. Vcc Over Temperature for

Fixed Vs= 5V, R^BIAS= 18 Ohms

+85C

+25C

-40C

3.60

3.70

3.80

3.90

4.00

4.10

4.20

Vcc (V)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

5 - 102

HMC478SC70 / 478SC70E

v00.0607

SiGe HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 4 GHz

Absolute Maximum Ratings

Collector Bias Voltage (Vcc)

Collector Bias Current (Icc)

RF Input Power (RFin)(Vcc = +2.4 Vdc)

Junction Temperature

+6.0 Vdc

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

100 mA

+5 dBm

150 °C

Continuous Pdiss (T = 85 °C)

(derate 9 mW/°C above 85 °C)

0.583 W

Thermal Resistance

(junction to lead)

111.5 °C/W

Storage Temperature

Operating Temperature

ESD Sensitivity (HBM)

-65 to +150 °C

-40 to +85 °C

Class 1C

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEAD MATERIAL: COPPER ALLOY

3. LEAD PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

Package Information

Part Number

Package Body Material

Lead Finish

MSL Rating

MSL1 ^[1]

Package Marking

478

HMC478SC70

Low Stress Injection Molded Plastic

Sn/Pb Solder

MSL1 ^[2]

HMC478SC70E

RoHS-compliant Low Stress Injection Molded Plastic

100% matte Sn

478

[1] Max peak reﬂow temperature of 235 °C

[2] Max peak reﬂow temperature of 260 °C

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

5 - 103

HMC478SC70 / 478SC70E

v00.0607

SiGe HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 4 GHz

Pin Descriptions

Pin Number

Function

Description

Interface Schematic

1, 2, 4, 5

GND

RFIN

These pins must be connected to RF/DC ground.

This pin is DC coupled.

An off chip DC blocking capacitor is required.

RFOUT

RF output and DC Bias (Vcc) for the output stage.

Application Circuit

Recommended Bias Resistor Values

for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc

Supply Voltage (Vs)

Note:

1. External blocking capacitors are required on

RFIN and RFOUT.

2. RBIAS provides DC bias stability over temperature.

R^BIASVALUE

18 Ω

1/8 W

35 Ω

1/4 W

67 Ω

1/2 W

R^BIASPOWER RATING

Recommended Component Values for Key Application Frequencies

Frequency (MHz)

Component

900

1900

18 nH

100 pF

2200

18 nH

100 pF

2400

15 nH

100 pF

3500

8.2 nH

100 pF

270 nH

0.01 μF

56 nH

100 pF

C1, C2

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

5 - 104

HMC478SC70 / 478SC70E

v00.0607

SiGe HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 4 GHz

Evaluation PCB

List of Materials for Evaluation PCB 118039 ^[1]

The circuit board used in the ﬁnal application should

use RF circuit design techniques. Signal lines

should have 50 ohm impedance while the package

ground leads should be connected directly to the

ground plane similar to that shown. A sufﬁcient

number of via holes should be used to connect

the top and bottom ground planes. The evaluation

board should be mounted to an appropriate heat

sink. The evaluation circuit board shown is available

from Hittite upon request.

Item

J1 - J2

J3 - J4

C1 - C3

Description

PCB Mount SMA Connector

DC Pin

100 pF Capacitor, 0402 Pkg.

1000 pF Capacitor, 0603 Pkg.

2.2 μF Capacitor, Tantalum

18 Ohm Resistor, 1210 Pkg.

18 nH Inductor, 0603 Pkg.

HMC478SC70(E)

[2]

PCB

117360 Evaluation PCB

[1] Reference this number when ordering complete evaluation PCB

[2] Circuit Board Material: Rogers 4350

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

5 - 105

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