HMC516LC5 [HITTITE]

SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz; SMT PHEMT低噪声放大器, 9 - 18 GHz的
HMC516LC5
型号: HMC516LC5
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
描述:

SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz
SMT PHEMT低噪声放大器, 9 - 18 GHz的

射频和微波 射频放大器 微波放大器
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HMC516LC5  
v00.1204  
SMT PHEMT LOW NOISE  
AMPLIFIER, 9 - 18 GHz  
8
Typical Applications  
The HMC516LC5 is ideal for use as a LNA or  
driver amplifier for:  
Features  
Noise Figure: 2.0 dB  
Gain: 20 dB  
• Point-to-Point Radios  
• Point-to-Multi-Point Radios & VSAT  
• Test Equipment and Sensors  
• Military  
OIP3: +25 dBm  
Single Supply: +3V @ 65 mA  
50 Ohm Matched Input/Output  
RoHS Compliant 5 X 5 mm Package  
Functional Diagram  
General Description  
The HMC516LC5 is a high dynamic range  
GaAs PHEMT MMIC Low Noise Amplifier (LNA)  
housed in a leadless “Pb free” RoHS compliant  
SMT package. The HMC516LC5 provides 20 dB  
of small signal gain, 2.0 dB of noise figure and  
has an output IP3 of +25 dBm. The P1dB output  
power of +13 dBm enables the LNA to also  
function as a LO driver for balanced, I/Q or image  
reject mixers. The HMC516LC5 allows the use of  
surface mount manufacturing techniques.  
Electrical Specifications,TA = +25° C, Vdd 1, 2, 3 = +3V  
Parameter  
Min.  
Typ.  
9 - 12  
20  
Max.  
Min.  
18  
Typ.  
12 - 18  
20.5  
0.015  
2.0  
Max.  
Units  
GHz  
dB  
Frequency Range  
Gain  
17.5  
Gain Variation Over Temperature  
Noise Figure  
0.015  
2.0  
10  
0.025  
2.5  
0.025  
2.5  
dB/ °C  
dB  
Input Return Loss  
10  
dB  
Output Return Loss  
12  
12  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Supply Current (Idd)(Vdd = +3V)  
13  
14  
dBm  
dBm  
dBm  
mA  
15  
16  
25  
25  
65  
65  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 458  
HMC516LC5  
v00.1204  
SMT PHEMT LOW NOISE  
AMPLIFIER, 9 - 18 GHz  
8
GaAs MMIC SUB-HARMONICALLY GPaUinMvPs.ETDemMpeIrXaEtuRre 17 - 25 GHz  
Broadband Gain & Return Loss  
25  
20  
15  
10  
5
22  
20  
18  
16  
14  
12  
10  
S21  
S11  
S22  
0
+25C  
+85C  
-40C  
-5  
-10  
-15  
-20  
4
6
8
10  
12  
14  
16  
18  
20  
22  
18  
18  
8
10  
12  
14  
16  
18  
18  
18  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Input Return Loss vs.Temperature  
Output Return Loss vs.Temperature  
0
0
+25C  
+85C  
-40C  
-5  
-10  
-15  
-20  
-25  
-30  
+25C  
+85C  
-40C  
-5  
-10  
-15  
-20  
8
10  
12  
14  
16  
8
10  
12  
14  
16  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Noise Figure vs.Temperature  
Output IP3 vs.Temperature  
10  
35  
9
30  
25  
20  
15  
8
7
6
5
4
3
2
1
0
+25C  
+85C  
-40C  
+25C  
+85C  
-40C  
10  
5
0
8
10  
12  
14  
16  
8
10  
12  
14  
16  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 459  
HMC516LC5  
v00.1204  
SMT PHEMT LOW NOISE  
AMPLIFIER, 9 - 18 GHz  
8
P1dB vs.Temperature  
Psat vs.Temperature  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
6
4
2
0
+25C  
+85C  
-40C  
+25C  
+85C  
-40C  
6
4
2
0
8
10  
12  
14  
16  
18  
8
10  
12  
14  
16  
18  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Reverse Isolation vs.Temperature  
Power Compression @ 12 GHz  
0
25  
-10  
-20  
20  
Pout  
Gain  
PAE  
-30  
+25C  
15  
10  
5
+85C  
-40C  
-40  
-50  
-60  
-70  
-80  
0
8
10  
12  
14  
16  
18  
-22 -20 -18 -16 -14 -12 -10 -8  
-6  
-4  
-2  
0
FREQUENCY (GHz)  
INPUT POWER (dBm)  
Gain, Noise Figure & Power vs.  
Supply Voltage @ 12 GHz  
7
6
5
4
3
2
1
0
24  
22  
20  
18  
16  
14  
12  
10  
Gain  
P1dB  
Noise Figure  
2.5  
3
3.5  
Vdd (Vdc)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 460  
HMC516LC5  
v00.1204  
SMT PHEMT LOW NOISE  
AMPLIFIER, 9 - 18 GHz  
8
Typical Supply Current vs. Vdd  
Absolute Maximum Ratings  
Drain Bias Voltage (Vdd1, Vdd2,  
Vdd3)  
Vdd (Vdc)  
Idd (mA)  
+4 Vdc  
+2.5  
61  
65  
69  
RF Input Power (RFin)(Vdd = +3.0  
Vdc)  
+10 dBm  
175 °C  
+3.0  
+3.5  
Channel Temperature  
Note: Amplifier will operate over full voltage range  
shown above.  
Continuous Pdiss (T= 85 °C)  
(derate 14 mW/°C above 85 °C)  
1.25 W  
Thermal Resistance  
(channel to die bottom)  
71 °C/W  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
Storage Temperature  
Operating Temperature  
ESD Sensitivity (HBM)  
-65 to +150 °C  
-40 to +85 °C  
Class 1A  
Outline Drawing  
NOTES:  
1. PACKAGE BODY MATERIAL: ALUMINA  
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES  
GOLD OVER 50 MICROINCHES MINIMUM NICKEL  
3. DIMENSIONS ARE IN INCHES [MILLIMETERS]  
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE  
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM  
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE  
SOLDERED TO PCB RF GROUND  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 461  
HMC516LC5  
v00.1204  
SMT PHEMT LOW NOISE  
AMPLIFIER, 9 - 18 GHz  
8
Pin Descriptions  
Pin Number  
Function  
Description  
Interface Schematic  
1, 2, 6-19,  
23-25, 27,  
29, 31, 32  
This pin may be connected to RF/DC ground.  
Performance will not be affected.  
N/C  
This pin is AC coupled and matched to 50 Ohms from  
9 - 18 GHz.  
4
RFIN  
Power Supply Voltage for the amplifier. External bypass  
capacitors of 100 pF and 2.2 µF are required.  
30, 28, 26  
Vdd1, 2, 3  
This pin is AC coupled and matched to 50 Ohms from  
9 - 18 GHz.  
21  
RFOUT  
GND  
These pins and package bottom must be  
connected to RF/DC ground.  
3, 5, 20, 22  
Application Circuit  
Component Value  
C1, C2, C3  
C4, C5, C6  
100 pF  
2.2 µF  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 462  
HMC516LC5  
v00.1204  
SMT PHEMT LOW NOISE  
AMPLIFIER, 9 - 18 GHz  
8
Evaluation PCB  
List of Materials for Evaluation PCB 110431*  
The circuit board used in the final application should  
use RF circuit design techniques. Signal lines should  
have 50 ohm impedance while the package ground  
leads and exposed paddle should be connected  
directly to the ground plane similar to that shown. A  
sufficient number of VIA holes should be used to con-  
nect the top and bottom ground planes. The evaluation  
board should be mounted to an appropriate heat sink.  
The evaluation circuit board shown is available from  
Hittite upon request.  
Item  
Description  
J1 - J2  
J3  
PC Mount K Connector  
2 mm DC Header  
C1 - C3  
C4 - C6  
U1  
100 pF Capacitor, 0402 Pkg.  
2.2 µF Capacitor, Tantalum  
HMC516LC5 Amplifier  
109001 Evaluation PCB  
PCB**  
** Circuit Board Material: Rogers 4350  
* Reference this number when ordering complete evaluation PCB  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 463  

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