HMC580ST89E [HITTITE]

InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz; 的InGaP HBT增益模块放大器MMIC ， DC - 1.0 GHz的


型号：	HMC580ST89E
厂家：	HITTITE MICROWAVE CORPORATION
描述：	InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz 的InGaP HBT增益模块放大器MMIC ， DC - 1.0 GHz的射频和微波射频放大器微波放大器
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HMC580ST89 / 580ST89E

v00.1106

InGaP HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 1.0 GHz

Typical Applications

The HMC580ST89 / HMC580ST89E is an ideal RF/IF

gain block & LO or PA driver:

Features

P1dB Output Power: +22 dBm

Gain: 22 dB

• Cellular / PCS / 3G

Output IP3: +37 dBm

Cascadable 50 Ohm I/Os

Single Supply: +5V

• Fixed Wireless & WLAN

• CATV, Cable Modem & DBS

• Microwave Radio & Test Equipment

• IF & RF Applications

Industry Standard SOT89 Package

Functional Diagram

General Description

The HMC580ST89 & HMC580ST89E are InGaP

Heterojunction Bipolar Transistor (HBT) Gain

Block MMIC SMT ampliﬁers covering DC to 1 GHz.

Packaged in an industry standard SOT89, the

ampliﬁer can be used as a cascadable 50 Ohm RF

or IF gain stage as well as a PA or LO driver with

up to +26 dBm output power. The HMC580ST89(E)

offers 22 dB of gain with a +37 dBm output IP3 at 250

MHz, and can operate directly from a +5V supply. The

HMC580ST89(E) exhibits excellent gain and output

power stability over temperature, while requiring a

minimal number of external bias components.

Electrical Specifications, Vs= 5.0 V, Rbias= 1.8 Ohm, T_A= +25° C

Parameter

Min.

Typ.

Max.

Units

DC - 0.25 GHz

0.25 - 0.50 GHz

0.50 - 1.00 GHz

18.5

Gain

Gain Variation Over Temperature

Input Return Loss

DC - 1.0 GHz

0.005

dB/ °C

DC - 0.25 GHz

0.25 - 0.50 GHz

0.50 - 1.00 GHz

DC - 0.50 GHz

0.50 - 1.00 GHz

Output Return Loss

Reverse Isolation

DC - 1.0 GHz

DC - 0.25 GHz

0.25 - 0.50 GHz

0.50 - 1.00 GHz

17.5

20.5

dBm

Output Power for 1 dB Compression (P1dB)

DC - 0.25 GHz

0.25 - 0.50 GHz

0.50 - 1.00 GHz

dBm

Output Third Order Intercept (IP3)

(Pout= 0 dBm per tone, 1 MHz spacing)

Noise Figure

DC - 1.0 GHz

2.8

Supply Current (Icq)

Note: Data taken with broadband bias tee on device output.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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HMC580ST89 / 580ST89E

v00.1106

InGaP HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 1.0 GHz

Broadband Gain & Return Loss

Gain vs. Temperature

S21

S11

S22

-5

-10

-15

-20

-25

-30

-35

-40

+25C

+85C

-40C

0.5

1.5

2.5

0.3

0.5

0.8

1.3

1.5

FREQUENCY (GHz)

Input Return Loss vs. Temperature

Output Return Loss vs. Temperature

-5

-10

-15

-20

-25

-30

-35

-40

-45

+25C

+85C

-40C

-5

-10

-15

+25C

+85C

-40C

-20

-25

0.3

0.5

0.8

1.3

1.5

0.3

0.5

0.8

1.3

FREQUENCY (GHz)

Reverse Isolation vs. Temperature

Noise Figure vs. Temperature

-5

+25C

+85C

-40C

-10

+25C

+85C

-40C

-15

-20

-25

-30

-35

0.3

0.5

0.8

1.3

1.5

0.3

0.5

0.8

1.3

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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HMC580ST89 / 580ST89E

v00.1106

InGaP HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 1.0 GHz

P1dB vs. Temperature

Psat vs. Temperature

+25C

+85C

-40C

+25C

+85C

-40C

0.3

0.5

0.8

1.3

1.5

0.3

0.5

0.8

1.3

1.5

FREQUENCY (GHz)

Gain, Power & OIP3 vs. Supply Voltage

for Constant Icc = 88 mA @ 850 MHz

Output IP3 vs. Temperature

Gain

P1dB

Psat

OIP3

+25C

+85C

-40C

0.3

0.5

0.8

1.3

1.5

4.5

5.5

FREQUENCY (GHz)

Vs (Vdc)

Vcc vs. Icc Over Temperature for

Fixed Vs= 5V, RBIAS= 1.8 Ohms

ACPR vs. Channel Output Power

-20

+85C

-25

WCDMA 140MHz

-30

WCDMA 400MHz

+25C

CDMA2000 140MHz

CDMA2000 400MHz

-35

-40

-45

-50

-55

-60

-65

-40C

4.82

4.83

4.84

4.85

4.86

4.87

Vcc (Vdc)

CHANNEL OUTPUT POWER (dBm)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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HMC580ST89 / 580ST89E

v00.1106

InGaP HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 1.0 GHz

Absolute Maximum Ratings

Collector Bias Voltage (Vcc)

+5.5 Vdc

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RF Input Power (RFin)(Vcc = +4.2 Vdc) +10 dBm

Junction Temperature

150 °C

0.59 W

Continuous Pdiss (T = 85 °C)

(derate 9 mW/°C above 85 °C)

Thermal Resistance

(junction to lead)

110 °C/W

Storage Temperature

Operating Temperature

-65 to +150 °C

-40 to +85 °C

Outline Drawing

NOTES:

1. LEADFRAME MATERIAL: COPPER ALLOY

2. DIMENSIONS ARE IN INCHES [MILLIMETERS].

3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

Package Information

Part Number

Package Body Material

Lead Finish

MSL Rating

MSL1 ^[1]

Package Marking ^[3]

H580

XXXX

HMC580ST89

Low Stress Injection Molded Plastic

Sn/Pb Solder

H580

XXXX

MSL1 ^[2]

HMC580ST89E

RoHS-compliant Low Stress Injection Molded Plastic

100% matte Sn

[1] Max peak reﬂow temperature of 235 °C

[2] Max peak reﬂow temperature of 260 °C

[3] 4-Digit lot number XXXX

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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HMC580ST89 / 580ST89E

v00.1106

InGaP HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 1.0 GHz

Pin Descriptions

Pin Number

Function

Description

Interface Schematic

This pin is DC coupled.

An off chip DC blocking capacitor is required.

OUT

GND

RF output and DC Bias (Vcc) for the output stage.

These pins and package bottom must be connected to

RF/DC ground.

2, 4

Application Circuit

Recommended Bias Resistor Values

for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc, Vs > +5V

Supply Voltage (Vs)

Note:

1. External blocking capacitors are required on

RFIN and RFOUT.

2. RBIAS provides DC bias stability over temperature.

R^BIASVALUE

13 Ω

¼ W

36 Ω

½ W

R^BIASPOWER RATING

Recommended Component Values for Key Application Frequencies with Vs = +5V

Frequency (MHz)

Component

250

400

900

56 nH

270 nH

0.01 μF

0 Ohms

110 nH

820 pF

1.5 Ohms

110 nH

820 pF

1.5 Ohms

C1, C2

Rbias

100 pF

1.8 Ohms

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

5 - 576

HMC580ST89 / 580ST89E

v00.1106

InGaP HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 1.0 GHz

Evaluation PCB

List of Materials for Evaluation PCB 116402 ^[1]

The circuit board used in the ﬁnal application

should use RF circuit design techniques. Signal

lines should have 50 ohm impedance while the

package ground leads and package bottom should

be connected directly to the ground plane similar to

that shown. A sufﬁcient number of via holes should

be used to connect the top and bottom ground

planes. The evaluation board should be mounted

to an appropriate heat sink. The evaluation circuit

board shown is available from Hittite upon request.

Item

J1 - J2

J3 - J4

C1, C2

Description

PCB Mount SMA Connector

DC Pin

Capacitor, 0402 Pkg.

100 pF Capacitor, 0402 Pkg.

1000 pF Capacitor, 0603 Pkg.

2.2 μF Capacitor, Tantalum

Resistor, 1206 Pkg.

Inductor, 0603 Pkg.

HMC580ST89 / HMC580ST89E

107368 Evaluation PCB

[2]

PCB

[1] Reference this number when ordering complete evaluation PCB

[2] Circuit Board Material: Rogers 4350

[3] Evaluation board tuned for 900 MHz operation

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

5 - 577

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