HMC593LP3E [HITTITE]
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz; 的GaAs PHEMT MMIC低噪声放大器W / BYPASS MODE ， 3.3 - 3.8 GHz的
| 型号： | HMC593LP3E |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz |
| 文件： | 总8页 (文件大小：335K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC593LP3 / 593LP3E
v00.0407
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
5
Typical Applications
The HMC593LP3 / HMC593LP3E is ideal for:
Features
Noise Figure: 1.2 dB
Output IP3: +29 dBm
Gain: 19 dB
• Wireless Infrastructure
• Fixed Wireless
• WiMAX WiBro / 4G
Low Loss LNA Bypass Path
Single Supply: +5.0V @ 40mA
50 Ohm Matched Output
• Tower Mounted Amplifiers
Functional Diagram
General Description
The HMC593LP3 / HMC593LP3E are versatile, high
dynamic range GaAs MMIC Low Noise Amplifiers
that integrate a low loss LNA bypass mode on the IC.
The amplifier is ideal for WiBro & WiMAX receivers
operating between 3.3 and 3.8 GHz and provides 1.2
dB noise figure, 19 dB of gain and +29 dBm IP3 from
a single supply of +5.0V @ 40mA. Input and output
return losses are 23 and 13 dB respectively with no
external matching components required. A single
control line (0/+3V) is used to switch between LNA
mode and a low 2.0 dB loss bypass mode reducing
the current consumption to 10 μA.
Electrical Specifications, TA = +25° C, Vdd = +5V
LNA Mode
Bypass Mode
Typ. Max.
Parameter
Units
Min.
16
Typ.
3.3 - 3.8
19
Max.
1.6
Min.
-3.0
Frequency Range
Gain
3.3 - 3.8
-2.0
GHz
dB
Gain Variation Over Temperature
Noise Figure
0.011
1.2
0.002
dB / °C
dB
Input Return Loss
23
30
25
dB
Output Return Loss
13
dB
Reverse Isolation
19
dB
Power for 1dB Compression (P1dB)*
Saturated Output Power (Psat)
13
16
30
dBm
dBm
17
Third Order Intercept (IP3)*
(-20 dBm Input Power per tone, 1 MHz tone spacing)
29
dBm
Supply Current (Idd)
40
-
50
0.01
<4
-
mA
ns
LNA Mode to Bypass Mode
Bypass Mode to LNA Mode
Swtiching Speed
250
μs
* P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB for Bypass Mode is referenced to RFIN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC593LP3 / 593LP3E
v00.0407
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
5
LNA - Gain, Noise Figure &
Power vs. Supply Voltage @ 3.5 GHz
LNA Broadband Gain & Return Loss
3
30
20
19
18
17
16
15
14
20
10
0
Gain
2.5
2
P1dB
1.5
1
-10
-20
-30
S21
S11
0.5
0
S22
Noise Figure
-40
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3.8
3.8
4.5
5
5.5
FREQUENCY (GHz)
Vdd (V)
LNA Gain vs. Temperature
LNA Noise Figure vs. Temperature
22
21
20
19
18
17
16
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
+25C
+85C
-40C
15
14
13
12
+25C
+85C
-40C
3.3
3.4
3.5
3.6
3.7
3.3
3.4
3.5
3.6
3.7
3.8
FREQUENCY (GHz)
FREQUENCY (GHz)
LNA Gain vs. Vdd
LNA Noise Figure vs. Vdd
22
21
20
19
18
17
16
15
14
13
12
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
4.5V
5.0V
5.5V
4.5V
5.0V
5.5V
3.3
3.4
3.5
3.6
3.7
3.3
3.4
3.5
3.6
3.7
3.8
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC593LP3 / 593LP3E
v00.0407
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
5
LNA Output Return Loss vs. Temperature
LNA Input Return Loss vs. Temperature
0
0
-5
+25C
+25C
+85C
-40C
+85C
-5
-10
-15
-20
-25
-40C
-10
-15
-20
-25
-30
-35
-40
3.3
3.4
3.5
3.6
3.7
3.8
3.8
3.8
3.3
3.4
3.5
3.6
3.7
3.8
3.8
3.8
FREQUENCY (GHz)
FREQUENCY (GHz)
LNA Output IP3 vs. Vdd
LNA Output IP3 vs. Temperature
35
35
34
33
32
31
30
29
28
27
26
25
34
33
32
31
30
29
28
27
26
25
+25C
+85C
-40C
4.5V
5.0V
5.5V
3.3
3.4
3.5
3.6
3.7
3.3
3.4
3.5
3.6
3.7
FREQUENCY (GHz)
FREQUENCY (GHz)
LNA Output P1dB vs. Temperature
LNA Psat vs. Temperature
22
22
21
21
20
20
+25C
+25C
+85C
+85C
19
19
-40C
-40C
18
17
16
15
14
13
12
18
17
16
15
14
13
12
3.3
3.4
3.5
3.6
3.7
3.3
3.4
3.5
3.6
3.7
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 178
HMC593LP3 / 593LP3E
v00.0407
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
5
LNA Output P1dB vs. Vdd
LNA Reverse Isolation vs. Temperature
22
0
21
20
19
18
17
16
15
14
13
12
-10
4.5V
5.0V
5.5V
+25C
+85C
-40C
-20
-30
-40
-50
3.3
3.4
3.5
3.6
3.7
3.8
3.3
3.4
3.5
3.6
3.7
3.8
3.8
3.8
FREQUENCY (GHz)
FREQUENCY (GHz)
Bypass Mode
Broadband Insertion Loss & Return Loss
Bypass Mode
Insertion Loss vs. Temperature
0
-0.5
-1
0
-5
-1.5
-2
S21
S11
S22
-10
-15
-20
-25
-2.5
-3
-3.5
-4
+25C
+85C
-40C
-4.5
-5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3.3
3.4
3.5
3.6
3.7
FREQUENCY (GHz)
FREQUENCY (GHz)
Bypass Mode
Input Return Loss vs. Temperature
Bypass Mode
Output Return Loss vs. Temperature
0
0
-5
-5
+25C
+85C
-40C
+25C
+85C
-40C
-10
-10
-15
-20
-25
-30
-15
-20
-25
-30
3.3
3.4
3.5
3.6
3.7
3.8
3.3
3.4
3.5
3.6
3.7
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 179
HMC593LP3 / 593LP3E
v00.0407
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
5
Absolute Maximum Ratings
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+8.0 Vdc
Vdd (Vdc)
Idd (mA)
RF Input Power
LNA Mode +15 dBm
+4.5
33
(RFin)(Vdd = +5.0 Vdc)
Bypass Mode +30 dBm
+5.0
39
Channel Temperature
150 °C
+5.5
44
Continuous Pdiss (T = 85 °C)
(derate 13 mW/°C above 85 °C)
850 mW
Truth Table
Thermal Resistance
(channel to ground paddle)
76.9 °C/W
LNA Mode
Vctl= Vdd
Vctl= 0V
Storage Temperature
Operating Temperature
-65 to +150° C
-40 to +85° C
Bypass Mode
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
593
XXXX
HMC593LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
593
XXXX
MSL1 [2]
HMC593LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 180
HMC593LP3 / 593LP3E
v00.0407
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
5
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 2, 5, 6, 8,
9, 11 - 13
No connection necessary.
These pins may be connected to RF/DC ground.
N/C
3
4, 7, 15
10
RFIN
This pin is AC coupled and matched to 50 Ohms.
GND
These pins must be connected to RF/DC ground.
This pin is AC coupled and matched to 50 Ohms.
RFOUT
Power supply voltage. Bypass capacitors are required. See
application circuit.
14
Vdd
16
Vctl
LNA/Bypass Mode Control Voltage. See truth table.
Application Circuit
Component
C1, C2
C3
Value
100pF
10KpF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 181
HMC593LP3 / 593LP3E
v00.0407
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
5
Evaluation PCB
List of Materials for Evaluation PCB 117160 [1]
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation circuit board shown is available from
Hittite upon request.
Item
Description
J1 - J2
J3 - J6
C1, C2
C3
PCB Mount SMA RF Connector
DC Pin
100 pF Capacitor, 0402 Pkg.
10 KpF Capacitor, 0402 Pkg.
HMC593LP3 / HMC593LP3E Amplifier
117158 Evaluation Board
U1
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 182
HMC593LP3 / 593LP3E
v00.0407
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
5
Notes:
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 183
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