HMC598_10 [HITTITE]
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 22 - 46 GHz OUTPUT; 砷化镓MMIC X2有源倍频器， 22 - 46 GHz的输出
| 型号： | HMC598_10 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 22 - 46 GHz OUTPUT |
| 文件： | 总6页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC598
ꢃ01.0809
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 22 - 46 GHz OUTPUT
Typical Applications
Features
The HMc598 is ideal for:
High Output Power: +15 dBm
Low Iꢁput Power Driꢃe: 0 to +6 dBm
Fo Isolatioꢁ: 25 dBꢀ @ Fout = 30 GHz
Die Size: 2.07 x 1.86 x 0.1 mm
• cloꢀk Geꢁeratioꢁ Appliꢀatioꢁs:
Oc-768 & SDM STM-256
2
• Poiꢁt-to-Poiꢁt & vSAT Radios
• Test Iꢁstrumeꢁtatioꢁ
• Militarꢂ & Spaꢀe
Functional Diagram
General Description
The HMc598 is a x2 aꢀtiꢃe broadbaꢁd frequeꢁꢀꢂ
multiplier ꢀhip utiliziꢁg GaAs PHEMT teꢀhꢁologꢂ.
Wheꢁ driꢃeꢁ bꢂ a +5 dBm sigꢁal, the multiplier
proꢃides +15 dBm tꢂpiꢀal output power from 22 to
46 GHz aꢁd the Fo aꢁd 3Fo isolatioꢁs are 25 dBꢀ
aꢁd 15 dBꢀ respeꢀtiꢃelꢂ at 30 GHz. The HMc598 is
ideal for use iꢁ LO multiplier ꢀhaiꢁs for Poiꢁt to Poiꢁt
aꢁd vSAT radios ꢂieldiꢁg reduꢀed parts ꢀouꢁt ꢃersus
traditioꢁal desigꢁ approaꢀhes.
Electrical Specifications
TA = +25°C, Vdd1, 2, 3 = +5V, Vgg1 = -1.25V, Vgg2 = -0.8V, 5 dBm Drive Level
Parameter
Miꢁ.
Tꢂp.
11 - 23
22 - 46
15
Max.
Uꢁits
GHz
GHz
dBm
dBꢀ
dBꢀ
dBꢀ
dB
Frequeꢁꢀꢂ Raꢁge, Iꢁput
Frequeꢁꢀꢂ Raꢁge, Output
Output Power
10
Fo Isolatioꢁ (with respeꢀt to output leꢃel)
3Fo Isolatioꢁ (with respeꢀt to output leꢃel)
4Fo Isolatioꢁ (with respeꢀt to output leꢃel)
Iꢁput Returꢁ Loss
20
10
5
10
Output Returꢁ Loss
13
dB
Supplꢂ curreꢁt (Idd Total)
175
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2 - 1
HMC598
ꢃ01.0809
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 22 - 46 GHz OUTPUT
Output Power vs.
Temperature @ 5 dBm Drive Level
Output Power vs. Drive Level
20
20
2
15
15
10
10
0 dBm
+25 C
+85 C
-55 C
+3 dBm
5
0
5
+5 dBm
+8 dBm
+10 dBm
0
14
18
22
26
30
34
38
42
46
14
18
22
26
30
34
38
42
46
FREQUENCY (GHz)
FREQUENCY (GHz)
Output Power vs.
Supply Voltage @ 5 dBm Drive Level
Isolation @ 5 dBm Drive Level
20
20
10
0
F0
15
2F0
3F0
4F0
10
-10
-20
-30
+4.5V
5
0
+5V
+5.5V
14
18
22
26
30
34
38
42
46
14
18
22
26
30
34
38
42
46
FREQUENCY (GHz)
FREQUENCY (GHz)
Output Power vs. Input Power
20
15
10
5
22GHz
26GHz
40GHz
0
0
2
4
6
8
10
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2 - 2
HMC598
ꢃ01.0809
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 22 - 46 GHz OUTPUT
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25 C
+85 C
-55 C
+25 C
-5
-10
-15
-20
-25
-30
-5
2
+85 C
-55 C
-10
-15
-20
-25
-30
6
8
10
12
14
16
18
20
22
24
14
18
22
26
30
34
38
42
46
FREQUENCY (GHz)
FREQUENCY (GHz)
Supply Current vs. Input Power
200
190
180
170
160
150
140
0
2
4
6
8
10
INPUT POWER (dBm)
Typical Supply Current vs.
Vdd1, Vdd2, Vdd3
Absolute Maximum Ratings
RF Iꢁput (vdd1, 2, 3 = +5v)
Supplꢂ voltage (vdd1,2, 3)
chaꢁꢁel Temperature
+10 dBm
+6 vdꢀ
175 °c
vdd1, 2, 3 (vdꢀ)
Idd1 + Idd2 + Idd3(mA)
4.5
5.0
5.5
170
175
180
coꢁtiꢁuous Pdiss (T= 85 °c)
(derate 12.7 mW/°c aboꢃe 85 °c)
1.14 W
note:
Thermal Resistaꢁꢀe
(ꢀhaꢁꢁel to die bottom)
79 °c/W
Multiplier will operate oꢃer full ꢃoltage raꢁge showꢁ aboꢃe.
Storage Temperature
Operatiꢁg Temperature
-65 to +150 °c
-55 to +85 °c
ELEcTROSTATIc SEnSITIvE DEvIcE
OBSERvE HAnDLInG PREcAUTIOnS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2 - 3
HMC598
ꢃ01.0809
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 22 - 46 GHz OUTPUT
Outline Drawing
2
Die Packaging Information [1]
[2]
Staꢁdard
Alterꢁate
GP-1 (Gel Paꢀk)
—
[1] Refer to the “Paꢀkagiꢁg Iꢁformatioꢁ” seꢀtioꢁ for die
paꢀkagiꢁg dimeꢁsioꢁs.
[2] Refereꢁꢀe this suffix oꢁlꢂ wheꢁ orderiꢁg alterꢁate die
paꢀkagiꢁg.
Pin Description
Piꢁ number
Fuꢁꢀtioꢁ
Desꢀriptioꢁ
Iꢁterfaꢀe Sꢀhematiꢀ
1
RFIn
Piꢁ is Ac ꢀoupled aꢁd matꢀhed to 50 Ohms.
Power supplꢂ ꢃoltage. See Assemblꢂ
Diagram for exterꢁal ꢀompoꢁeꢁts.
2 - 4
vdd1, vdd2, vdd3
5
RFOUT
Piꢁ is Ac ꢀoupled aꢁd matꢀhed to 50 Ohms.
Gate ꢀoꢁtrol for multiplier. Please follow “MMIc
Amplifier Biasiꢁg Proꢀedure” Appliꢀatioꢁ ꢁote. See
Assemblꢂ Diagram for required exterꢁal ꢀompoꢁeꢁts.
6, 7
vgg2, vgg1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2 - 4
HMC598
ꢃ01.0809
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 22 - 46 GHz OUTPUT
Assembly Diagram
2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2 - 5
HMC598
ꢃ01.0809
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 22 - 46 GHz OUTPUT
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attaꢀhed direꢀtlꢂ to the grouꢁd plaꢁe euteꢀtiꢀallꢂ or with
ꢀoꢁduꢀtiꢃe epoxꢂ (see HMc geꢁeral Haꢁdliꢁg, Mouꢁtiꢁg, Boꢁdiꢁg note).
0.102mm (0.004”) Thick GaAs MMIC
2
50 Ohm Miꢀrostrip traꢁsmissioꢁ liꢁes oꢁ 0.127mm (5 mil) thiꢀk alumiꢁa thiꢁ film
substrates are reꢀommeꢁded for briꢁgiꢁg RF to aꢁd from the ꢀhip (Figure 1). If
0.254mm (10 mil) thiꢀk alumiꢁa thiꢁ film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surfaꢀe of the die is ꢀoplaꢁar with the
surfaꢀe of the substrate. Oꢁe waꢂ to aꢀꢀomplish this is to attaꢀh the 0.102mm
(4 mil) thiꢀk die to a 0.150mm (6 mil) thiꢀk molꢂbdeꢁum heat spreader (molꢂ-tab)
whiꢀh is theꢁ attaꢀhed to the grouꢁd plaꢁe (Figure 2).
Wire 3 mil Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
Miꢀrostrip substrates should be brought as ꢀlose to the die as possible iꢁ order
to miꢁimize ribboꢁ boꢁd leꢁgth. Tꢂpiꢀal die-to-substrate spaꢀiꢁg is 0.076mm (3
mils). Gold ribboꢁ of 0.075 mm (3 mil) width aꢁd miꢁimal leꢁgth <0.31 mm (<12
mils) is reꢀommeꢁded to miꢁimize iꢁduꢀtaꢁꢀe oꢁ RF, LO & IF ports.
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Aꢁ RF bꢂpass ꢀapaꢀitor should be used oꢁ the vdd iꢁput. A 100 pF siꢁgle laꢂer
ꢀapaꢀitor (mouꢁted euteꢀtiꢀallꢂ or bꢂ ꢀoꢁduꢀtiꢃe epoxꢂ) plaꢀed ꢁo further thaꢁ
0.762mm (30 Mils) from the ꢀhip is reꢀommeꢁded.
Figure 1.
Handling Precautions
0.102mm (0.004”) Thick GaAs MMIC
Follow these preꢀautioꢁs to aꢃoid permaꢁeꢁt damage.
Ribbon Bond
Storage: All bare die are plaꢀed iꢁ either Waffle or Gel based ESD proteꢀtiꢃe
ꢀoꢁtaiꢁers, aꢁd theꢁ sealed iꢁ aꢁ ESD proteꢀtiꢃe bag for shipmeꢁt. Oꢁꢀe the
sealed ESD proteꢀtiꢃe bag has beeꢁ opeꢁed, all die should be stored iꢁ a drꢂ
ꢁitrogeꢁ eꢁꢃiroꢁmeꢁt.
0.076mm
(0.003”)
Cleanliness: Haꢁdle the ꢀhips iꢁ a ꢀleaꢁ eꢁꢃiroꢁmeꢁt. DO nOT attempt to ꢀleaꢁ
the ꢀhip usiꢁg liquid ꢀleaꢁiꢁg sꢂstems.
RF Ground Plane
Storage: All bare die are plaꢀed iꢁ either Waffle or Gel based ESD proteꢀtiꢃe
ꢀoꢁtaiꢁers, aꢁd theꢁ sealed iꢁ aꢁ ESD proteꢀtiꢃe bag for shipmeꢁt. Oꢁꢀe the
sealed ESD proteꢀtiꢃe bag has beeꢁ opeꢁed, all die should be stored iꢁ a drꢂ
ꢁitrogeꢁ eꢁꢃiroꢁmeꢁt.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Static Sensitivity: Follow ESD preꢀautioꢁs to proteꢀt agaiꢁst > 250v ESD
strikes.
Figure 2.
Transients: Suppress iꢁstrumeꢁt aꢁd bias supplꢂ traꢁsieꢁts while bias is applied. Use shielded sigꢁal aꢁd bias ꢀables to miꢁimize
iꢁduꢀtiꢃe piꢀk-up.
General Handling: Haꢁdle the ꢀhip aloꢁg the edges with a ꢃaꢀuum ꢀollet or with a sharp pair of beꢁt tweezers. The surfaꢀe of the
ꢀhip maꢂ haꢃe fragile air bridges aꢁd should ꢁot be touꢀhed with ꢃaꢀuum ꢀollet, tweezers, or fiꢁgers.
Mounting
The ꢀhip is baꢀk-metallized aꢁd ꢀaꢁ be die mouꢁted with AuSꢁ euteꢀtiꢀ preforms or with eleꢀtriꢀallꢂ ꢀoꢁduꢀtiꢃe epoxꢂ. The
mouꢁtiꢁg surfaꢀe should be ꢀleaꢁ aꢁd flat.
Eutectic Die Attach: A 80/20 gold tiꢁ preform is reꢀommeꢁded with a work surfaꢀe temperature of 255 deg. c aꢁd a tool
temperature of 265 deg. c. Wheꢁ hot 90/10 ꢁitrogeꢁ/hꢂdrogeꢁ gas is applied, tool tip temperature should be 290 deg. c. DO nOT
expose the ꢀhip to a temperature greater thaꢁ 320 deg. c for more thaꢁ 20 seꢀoꢁds. no more thaꢁ 3 seꢀoꢁds of sꢀrubbiꢁg should
be required for attaꢀhmeꢁt.
Epoxy Die Attach: Applꢂ a miꢁimum amouꢁt of epoxꢂ to the mouꢁtiꢁg surfaꢀe so that a thiꢁ epoxꢂ fillet is obserꢃed arouꢁd the
perimeter of the ꢀhip oꢁꢀe it is plaꢀed iꢁto positioꢁ. cure epoxꢂ per the maꢁufaꢀturer’s sꢀhedule.
Wire Bonding
Ball or wedge boꢁd with 0.025mm (1 mil) diameter pure gold wire. Thermosoꢁiꢀ wireboꢁdiꢁg with a ꢁomiꢁal stage temperature of
150 deg. c aꢁd a ball boꢁdiꢁg forꢀe of 40 to 50 grams or wedge boꢁdiꢁg forꢀe of 18 to 22 grams is reꢀommeꢁded. Use the miꢁimum
leꢃel of ultrasoꢁiꢀ eꢁergꢂ to aꢀhieꢃe reliable wireboꢁds. Wireboꢁds should be started oꢁ the ꢀhip aꢁd termiꢁated oꢁ the paꢀkage or
substrate. All boꢁds should be as short as possible <0.31mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 6
Application Support: Phone: 978-250-3343 or apps@hittite.com
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