HMC598 [HITTITE]

GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 22 - 46 GHz OUTPUT; 砷化镓MMIC X2有源倍频器， 22 - 46 GHz的输出


型号：	HMC598
厂家：	HITTITE MICROWAVE CORPORATION
描述：	GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 22 - 46 GHz OUTPUT 砷化镓MMIC X2有源倍频器， 22 - 46 GHz的输出射频微波输出元件倍频器
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HMC598

v00.0308

GaAs MMIC x2 ACTIVE FREQUENCY

MULTIPLIER, 22 - 46 GHz OUTPUT

Typical Applications

Features

The HMC598 is ideal for:

High Output Power: +15 dBm

Low Input Power Drive: 0 to +6 dBm

Fo Isolation: 25 dBc @ Fout = 30 GHz

Die Size: 2.07 x 1.86 x 0.1 mm

• Clock Generation Applications:

OC-768 & SDM STM-256

• Point-to-Point & VSAT Radios

• Test Instrumentation

• Military & Space

Functional Diagram

General Description

The HMC598 is a x2 active broadband frequency

multiplier chip utilizing GaAs PHEMT technology.

When driven by a +5 dBm signal, the multiplier

provides +15 dBm typical output power from 22 to

46 GHz and the Fo and 3Fo isolations are 25 dBc

and 15 dBc respectively at 30 GHz. The HMC598 is

ideal for use in LO multiplier chains for Point to Point

and VSAT radios yielding reduced parts count versus

traditional design approaches.

Electrical Speciﬁcations

T_A= +25°C, Vdd1, 2, 3 = +5V, Vgg1 = -1.25V, Vgg2 = -0.8V, 5 dBm Drive Level

Parameter

Min.

Typ.

11 - 23

22 - 46

Max.

Units

GHz

dBm

dBc

Frequency Range, Input

Frequency Range, Output

Output Power

Fo Isolation (with respect to output level)

3Fo Isolation (with respect to output level)

4Fo Isolation (with respect to output level)

Input Return Loss

Output Return Loss

Supply Current (Idd Total)

175

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

2 - 68

HMC598

v00.0308

GaAs MMIC x2 ACTIVE FREQUENCY

MULTIPLIER, 22 - 46 GHz OUTPUT

Output Power vs.

Temperature @ 5 dBm Drive Level

Output Power vs. Drive Level

0 dBm

+25 C

+85 C

-55 C

+3 dBm

+5 dBm

+8 dBm

+10 dBm

FREQUENCY (GHz)

Output Power vs.

Supply Voltage @ 5 dBm Drive Level

Isolation @ 5 dBm Drive Level

2F0

3F0

4F0

-10

-20

-30

+4.5V

+5V

+5.5V

FREQUENCY (GHz)

Output Power vs. Input Power

22GHz

26GHz

40GHz

INPUT POWER (dBm)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

2 - 69

HMC598

v00.0308

GaAs MMIC x2 ACTIVE FREQUENCY

MULTIPLIER, 22 - 46 GHz OUTPUT

Input Return Loss vs. Temperature

Output Return Loss vs. Temperature

+25 C

+85 C

-55 C

+25 C

-5

-10

-15

-20

-25

-30

-5

+85 C

-55 C

-10

-15

-20

-25

-30

FREQUENCY (GHz)

Supply Current vs. Input Power

200

190

180

170

160

150

140

INPUT POWER (dBm)

Typical Supply Current vs.

Vdd1, Vdd2, Vdd3

Absolute Maximum Ratings

RF Input (Vdd1, 2, 3 = +5V)

Supply Voltage (Vdd1,2, 3)

Channel Temperature

+10 dBm

+6 Vdc

175 °C

Vdd1, 2, 3 (Vdc)

Idd1 + Idd2 + Idd3(mA)

4.5

5.0

5.5

170

175

180

Continuous Pdiss (T= 85 °C)

(derate 12.7 mW/°C above 85 °C)

1.14 W

Note:

Thermal Resistance

(channel to die bottom)

79 °C/W

Multiplier will operate over full voltage range shown above.

Storage Temperature

Operating Temperature

-65 to +150 °C

-55 to +85 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

2 - 70

HMC598

v00.0308

GaAs MMIC x2 ACTIVE FREQUENCY

MULTIPLIER, 22 - 46 GHz OUTPUT

Outline Drawing

Pin Description

Pin Number

Function

Description

Interface Schematic

RFIN

Pin is AC coupled and matched to 50 Ohms.

Power supply voltage. See Assembly

Diagram for external components.

2 - 4

Vdd1, Vdd2, Vdd3

RFOUT

Pin is AC coupled and matched to 50 Ohms.

Gate control for multiplier. Please follow “MMIC

Ampliﬁer Biasing Procedure” Application note. See

Assembly Diagram for required external components.

6, 7

Vgg2, Vgg1

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

2 - 71

HMC598

v00.0308

GaAs MMIC x2 ACTIVE FREQUENCY

MULTIPLIER, 22 - 46 GHz OUTPUT

Assembly Diagram

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

2 - 72

HMC598

v00.0308

GaAs MMIC x2 ACTIVE FREQUENCY

MULTIPLIER, 22 - 46 GHz OUTPUT

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or with

conductive epoxy (see HMC general Handling, Mounting, Bonding Note).

0.102mm (0.004”) Thick GaAs MMIC

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin ﬁlm

substrates are recommended for bringing RF to and from the chip (Figure 1). If

0.254mm (10 mil) thick alumina thin ﬁlm substrates must be used, the die should

be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the

surface of the substrate. One way to accomplish this is to attach the 0.102mm

(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)

which is then attached to the ground plane (Figure 2).

Wire 3 mil Ribbon Bond

0.076mm

(0.003”)

RF Ground Plane

Microstrip substrates should be brought as close to the die as possible in order

to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3

mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12

mils) is recommended to minimize inductance on RF, LO & IF ports.

0.127mm (0.005”) Thick Alumina

Thin Film Substrate

An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer

capacitor (mounted eutectically or by conductive epoxy) placed no further than

0.762mm (30 Mils) from the chip is recommended.

Figure 1.

Handling Precautions

0.102mm (0.004”) Thick GaAs MMIC

Follow these precautions to avoid permanent damage.

Ribbon Bond

Storage: All bare die are placed in either Waffle or Gel based ESD protective

containers, and then sealed in an ESD protective bag for shipment. Once the

sealed ESD protective bag has been opened, all die should be stored in a dry

nitrogen environment.

0.076mm

(0.003”)

Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean

the chip using liquid cleaning systems.

RF Ground Plane

Storage: All bare die are placed in either Waffle or Gel based ESD protective

containers, and then sealed in an ESD protective bag for shipment. Once the

sealed ESD protective bag has been opened, all die should be stored in a dry

nitrogen environment.

0.150mm (0.005”) Thick

Moly Tab

0.254mm (0.010”) Thick Alumina

Thin Film Substrate

Static Sensitivity: Follow ESD precautions to protect against > 250V ESD

strikes.

Figure 2.

Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize

inductive pick-up.

General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the

chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ﬁngers.

Mounting

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The

mounting surface should be clean and ﬂat.

Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature

of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the

chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required

for attachment.

Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy ﬁllet is observed around the

perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

Wire Bonding

Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of

150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum

level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or

substrate. All bonds should be as short as possible <0.31mm (12 mils).

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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