HMC605LP3E [HITTITE]
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz; 的GaAs PHEMT MMIC低噪声放大器W / BYPASS MODE ， 2.3 - 2.7 GHz的
| 型号： | HMC605LP3E |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz |
| 文件： | 总8页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC605LP3 / 605LP3E
v01.0707
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
5
Typical Applications
The HMC605LP3 / HMC605LP3E is ideal for:
Features
Noise Figure: 1.1 dB
• Wireless Infrastructure
Output IP3: +31 dBm
Gain: 20 dB
• Customer Premise Equipment
• Fixed Wireless
Low Loss & Failsafe Bypass Path
Single Supply: +3V or +5V
50 Ohm Matched Input / Output
• WiMAX & WiBro
• Tower Mounted Amplifiers
Functional Diagram
General Description
The HMC605LP3 / HMC605LP3E are versatile, high
dynamic range GaAs MMIC Low Noise Amplifiers
that integrate a low loss LNA bypass path on the IC.
The amplifier is ideal for WiBro & WiMAX receivers
operating between 2.3 and 2.7 GHz and provides
1.1 dB noise figure, 20 dB of gain and +31 dBm output
IP3 from a single supply of +5.0V @ 74 mA. Input
and output return losses are 14 and 15 dB respectively
with no external matching components required. A
single control line (Vctl) is used to switch between LNA
mode and a low 2.0 dB loss bypass mode and reduces
the current consumption to 10 μA. The HMC605LP3 is
failsafe and will default to the bypass mode with no DC
power applied.
Electrical Specifications, TA = +25° C, Vdd = +5V
LNA Mode
Bypass Mode
Typ. Max.
Parameter
Units
Min.
17.5
Typ.
2.3 - 2.7
20.5
0.012
1.1
Max.
1.3
Min.
-3.0
Frequency Range
Gain
2.3 - 2.7
-2.0
GHz
dB
Gain Variation Over Temperature
Noise Figure
0.002
dB / °C
dB
Input Return Loss
14
13
13
dB
Output Return Loss
15
dB
Reverse Isolation
33
dB
Output Power for 1dB Compression (P1dB)*
17
16
dBm
Output Third Order Intercept (IP3)*
(-20 dBm Input Power per tone, 1 MHz tone spacing)
31
dBm
Supply Current (Idd)
74
-
90
0.01
6.0
-
mA
ns
LNA Mode to Bypass Mode
Bypass Mode to LNA Mode
Swtiching Speed
60
ns
* P1dB for LNA Mode is referenced to RFOUT while P1dB for Bypass Mode is referenced to RFIN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 190
HMC605LP3 / 605LP3E
v01.0707
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
LNA – Gain, Noise Figure &
Power vs. Supply Voltage @ 850 MHz
5
LNA Broadband Gain & Return Loss
2.5
2
30
25
20
15
10
5
20
10
S21
S11
S22
1.5
1
0
-10
-20
-30
-40
Gain
P1dB
0.5
0
Noise Figure
4.5
0
1
2
3
4
5
6
3
3.5
4
5
FREQUENCY (GHz)
Vdd (Vdc)
LNA Gain vs. Temperature
LNA Noise Figure vs. Temperature
24
23
22
21
20
19
1.6
1.4
1.2
1
0.8
0.6
18
+25C
17
16
15
14
+85C
-40C
0.4
+25C
-40C
+85C
0.2
0
2.3
2.4
2.5
FREQUENCY (GHz)
2.6
2.7
2.3
2.4
2.5
2.6
2.7
FREQUENCY (GHz)
LNA Gain vs. Vdd
LNA Noise Figure vs. Vdd
24
23
22
21
20
19
18
17
16
15
14
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
+3.0V
+5.0V
3v
5V
0.7
0.6
0.5
2.3
2.4
2.5
FREQUENCY (GHz)
2.6
2.7
2.3
2.4
2.5
2.6
2.7
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 191
HMC605LP3 / 605LP3E
v01.0707
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
5
LNA Output Return Loss vs. Temperature
LNA Input Return Loss vs. Temperature
0
0
-5
-10
-15
-5
+25C
+85C
-40C
-10
-15
-20
-25
-30
-20
+25C
+85C
-40C
-25
-30
2.3
2.3
2.4
2.5
2.5
2.5
2.6
2.6
2.7
2.7
2.7
2.3
2.3
2.4
2.5
2.5
2.5
2.6
2.6
2.7
2.7
2.7
FREQUENCY (GHz)
FREQUENCY (GHz)
LNA Output IP3 vs. Temperature
LNA Output IP3 vs. Vdd
35
34
33
32
31
30
29
40
35
30
25
20
15
10
5
+3V
+5V
28
27
26
25
+25C
-40C
+85C
0
2.3
2.3
2.4
2.5
2.5
2.5
2.6
2.6
2.3
2.3
2.4
2.5
2.5
2.5
2.6
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
LNA Psat vs. Temperature
LNA Output P1dB vs. Temperature
24
24
23
23
22
21
20
19
18
17
16
15
14
22
21
20
19
18
17
16
15
14
+25C
+85C
-40C
+25C
+85C
-40C
2.3
2.4
2.5
FREQUENCY (GHz)
2.6
2.3
2.4
2.5
FREQUENCY (GHz)
2.6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 192
HMC605LP3 / 605LP3E
v01.0707
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
5
LNA Output P1dB vs. Vdd
LNA Reverse Isolation vs. Temperature
20
18
16
14
12
10
8
0
-5
-10
-15
+25C
+85C
-40C
-20
-25
-30
-35
-40
+3V
+5V
6
4
2
0
2.3
2.4
2.5
FREQUENCY (GHz)
2.6
2.7
2.3
2.4
2.5
2.6
2.7
2.7
2.7
FREQUENCY (GHz)
Bypass Mode
Broadband Insertion Loss & Return Loss
Bypass Mode
Insertion Loss vs. Temperature
0
0
-1
-10
-2
-20
+25C
-3
-4
-5
+85C
-40C
S21
S11
S22
-30
-40
1
2
3
4
5
6
2.3
2.4
2.5
FREQUENCY (GHz)
2.6
FREQUENCY (GHz)
Bypass Mode
Input Return Loss vs. Temperature
Bypass Mode
Output Return Loss vs. Temperature
0
0
-5
-5
-10
-10
-15
-15
+25C
+85C
-40C
+25C
+85C
-40C
-20
-25
-30
-20
-25
-30
2.3
2.3
2.4
2.5
2.5
2.5
2.6
2.6
2.7
2.3
2.3
2.4
2.5
2.5
2.5
2.6
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 193
HMC605LP3 / 605LP3E
v01.0707
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
5
Absolute Maximum Ratings
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+8.0 Vdc
Vdd (Vdc)
Idd (mA)
RF Input Power
LNA Mode +15 dBm
+5.0
74
(RFin)(Vdd = +5.0 Vdc)
Bypass Mode +30 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 13.7 mW/°C above 85 °C)
890 mW
Truth Table
Thermal Resistance
(channel to ground paddle)
73 °C/W
LNA Mode
Vctl = Vcc
Vctl= 0V
Storage Temperature
Operating Temperature
-65 to +150° C
-40 to +85° C
Bypass Mode
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
605
XXXX
HMC605LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
605
XXXX
MSL1 [2]
HMC605LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 194
HMC605LP3 / 605LP3E
v01.0707
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
5
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 2, 5, 6,
8, 12, 13
No connection necessary.
These pins may be connected to RF/DC ground.
N/C
This pin is AC coupled and matched to 50 Ohms. See
application circuit.
3
4, 7, 9, 11, 15
10
RFIN
GND
These pins must be connected to RF/DC ground.
This pin is AC coupled and matched to 50 Ohms.
RFOUT
Power supply voltage. Bypass capacitors are required. See
application circuit.
14
Vdd
16
Vctl
Mode Control Voltage. See truth table.
Application Circuit
Components
C1, C2
Value
100pF
10KpF
C3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 195
HMC605LP3 / 605LP3E
v01.0707
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
5
Evaluation PCB
List of Materials for Evaluation PCB 117160 [1]
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation circuit board shown is available from
Hittite upon request.
Item
Description
J1 - J2
J3 - J6
C1, C2
C3
PCB Mount SMA RF Connector
DC Pin
100 pF Capacitor, 0402 Pkg.
10 KpF Capacitor, 0402 Pkg.
HMC605LP3 / HMC605LP3E Amplifier
117158 Evaluation Board
U1
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 196
HMC605LP3 / 605LP3E
v01.0707
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
5
Notes:
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 197
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