HMC814 [HITTITE]
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 13 - 24.6 GHz OUTPUT; 砷化镓MMIC X2有源倍频器， 13 - 24.6 GHz的输出
| 型号： | HMC814 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 13 - 24.6 GHz OUTPUT |
| 文件： | 总6页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC814
v00.1109
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 13 - 24.6 GHz OUTPUT
Typical Applications
Features
The HMC814 is ideal for:
High Output Power: +17 dBm
Low Input Power Drive: 0 to +6 dBm
Fo Isolation: >20 dBc @ Fout = 19 GHz
100 kHz SSB Phase Noise: -136 dBc/Hz
Single Supply: +5V @ 88mA
Die Size: 1.2 x 1.23 x 0.1 mm
2
• Clock Generation Applications:
SONET OC-192 & SDH STM-64
• Point-to-Point & VSAT Radios
• Test Instrumentation
• Military & Space
• Sensors
Functional Diagram
General Description
The HMC814 is a x2 active broadband frequency
multiplier chip utilizing GaAs PHEMT technology.
When driven by a +4 dBm signal, the multiplier
provides +17 dBm typical output power from 13 to
24.6 GHz. The Fo, 3Fo and 4Fo isolations are >20
dBc at 19 GHz. The HMC814 is ideal for use in LO
multiplier chains for Pt-to-Pt & VSAT Radios yielding
reduced parts count vs. traditional approaches. The
low additive SSB Phase Noise of -136 dBc/Hz at
100 kHz offset helps maintain good system noise
performance. All data is taken with the chip connected
via two 0.025mm (1 mil) wire bonds of minimal length
0.31 mm (12 mils).
Electrical Specifications, TA = +25 °C, Vdd1, Vdd2 = +5V, +4 dBm Drive Level
Parameter
Min.
Typ.
Max.
Units
GHz
GHz
dBm
dBc
Frequency Range, Input
Frequency Range, Output
Output Power
6.5 - 12.3
13.0 - 24.6
14
17
25
25
7
Fo Isolation (with respect to output level)
3Fo Isolation (with respect to output level)
Input Return Loss
dBc
dB
Output Return Loss
7
dB
SSB Phase Noise (100 kHz Offset @ Input Frequency = 19 GHz)
Supply Current (Idd1 & Idd2)
-136
88
dBc/Hz
mA
70
100
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC814
v00.1109
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 13 - 24.6 GHz OUTPUT
Output Power vs.
Output Power vs. Drive Level
Temperature @ +4 dBm Drive Level
20
25
2
16
15
0 dBm
1 dBm
12
5
2 dBm
3 dBm
4 dBm
5 dBm
6 dBm
+25C
8
-5
-15
-25
+85C
-55C
4
0
12.5
14.5
16.5
18.5
20.5
22.5
24.5
26.5
12.5
14.5
16.5
18.5
20.5
22.5
24.5
26.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Output Power vs.
Isolation @ +4 dBm Drive Level
Supply Voltage @ +4 dBm Drive Level
20
20
16
10
0
12
4.5V
8
-10
5.0V
5.5V
Fo
2 Fo
3 Fo
4 Fo
4
-20
0
-30
12.5
14.5
16.5
18.5
20.5
22.5
24.5
26.5
12.5
14.5
16.5
18.5
20.5
22.5
24.5
26.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Output Power vs. Input Power
20
15
10
5
15 GHz
19 GHz
23 GHz
24 GHz
0
0
1
2
3
4
5
6
7
8
9
10
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 69
HMC814
v00.1109
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 13 - 24.6 GHz OUTPUT
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-5
2
-10
-10
-15
-15
+25C
+85C
-55C
+25C
+85C
-55C
-20
-25
-30
-20
-25
-30
6
7
8
9
10
11
12
13
12.5
14.5
16.5
18.5
20.5
22.5
24.5
26.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Phase Noise @ 19 GHz
-10
-30
-50
-70
-90
-110
-130
-150
-170
102
103
104
105
106
107
108
FREQUENCY (Hz)
Absolute Maximum Ratings
Typical Supply Current vs. Vdd
RF Input (Vdd = +5V)
+10 dBm
+5.5 Vdc
175 °C
Vdd (Vdc)
Idd (mA)
Supply Voltage (Vdd1, Vdd2)
Channel Temperature
4.5
87
88
89
5.0
Continuous Pdiss (T= 85 °C)
(derate 8.7 mW/°C above 85 °C)
5.5
782 mW
Note:
Thermal Resistance
(channel to die bottom)
115 °C/W
Multiplier will operate over full voltage range shown above.
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 70
HMC814
v00.1109
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 13 - 24.6 GHz OUTPUT
Outline Drawing
2
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE .002”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 71
HMC814
v00.1109
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 13 - 24.6 GHz OUTPUT
Pin Description
Pin Number
Function
Description
Pin is AC coupled
Interface Schematic
2
1
RFIN
Vdd1, Vdd2
RFOUT
and matched to 50 Ohms.
Supply voltage 5V 0.5V. External bypass capacitors
of 100 pF, 1,000 pF and 2.2 μF are recommended.
2, 3
Pin is AC coupled
and matched to 50 Ohms.
4
Assembly Diagram
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 72
HMC814
v00.1109
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 13 - 24.6 GHz OUTPUT
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
2
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Wire 3 mil Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be brought as close to the die as possible in order
to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3
mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12
mils) is recommended to minimize inductance on RF, LO & IF ports.
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer
capacitor (mounted eutectically or by conductive epoxy) placed no further than
0.762mm (30 Mils) from the chip is recommended.
Figure 1.
Handling Precautions
0.102mm (0.004”) Thick GaAs MMIC
Follow these precautions to avoid permanent damage.
Ribbon Bond
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
RF Ground Plane
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD
strikes.
Figure 2.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The
mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool
temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT
expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should
be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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