HM4990A [HMSEMI]

1.25W Mono Audio Power Amplifier;
HM4990A
型号: HM4990A
厂家: H&M Semiconductor    H&M Semiconductor
描述:

1.25W Mono Audio Power Amplifier

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中文:  中文翻译
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HM4990  
1.25W Mono Audio Power Amplifier  
GENERAL DESCRIPTION  
FEATURES  
The HM4990 is a mono Class-AB audio power amplifier . Ultra low current in shutdown mode  
designed for demanding applications in mobile  
. Low quiescent current  
phones and other portable media devices. It is  
. Improved pop & click circuitry eliminates noise  
capable of delivering 1.25W of continuous output  
during turn-on and turn-off transitions  
power to an 8BTL load with less than 1% distortion  
. Supports both single-end and differential inputs  
(THD+N) from a 5VDC power supply.  
. Wide operating voltage range: 2.5 ~ 5.5V  
The HM4990 is specifically designed to provide high  
. No output coupling capacitors, snubber networks  
quality output power with a minimal number of  
or bootstrap capacitors required  
external components. The HM4990 does not require  
output coupling capacitors or bootstrap capacitors,  
and is therefore ideal for use in mobile phones and  
other low voltage applications where minimal power  
consumption is a primary requirement.  
. Available in space-saving package  
COL1.5X1.5-9L  
MSOP-8L  
KEY SPECIFICATIONS  
The HM4990 features a low-power shutdown mode. In  
the shutdown mode where a logic low is applied onto  
the SD pin, the amplifier is completely turned off and  
no supply current will flow through the device.  
. Improved PSRR at 217Hz : 66dB  
. Power Output at 5V, 1% THD+N, 8: 1.25W  
. Power Output at 3V, 1% THD+N, 8: 425mW  
. Quiescent Current 1.6mA (VDD=3V)  
The HM4990 also features advanced pop & click  
circuitry which eliminates noise which would  
otherwise occur during turn-on and turn-off  
transitions.  
APPLICATIONS  
. Mobile phone  
. PDA  
The HM4990 is unity-gain stable and can be configured  
by external gain-setting resistors.  
. Portable electronic devices  
APPLICATION CIRCUIT  
Figure 1: Typical Audio Amplifier Application Circuit  
1
HM4990  
PIN CONFIGURATION AND DESCRIPTION  
HM4990A  
HM4990M  
QFN1.5X1.5-9L  
MSOP-8L  
SYMBOL  
VDD  
QFN9  
MSOP8  
DESCRIPTION  
B3  
6
Power supply  
SD  
C3  
1
Active low shutdown control  
-IN  
A1  
4
3
5
8
2
7
Negative differential input  
Positive differential input  
Negative BTL output  
Positive BTL output  
+IN  
A3  
VO1  
VO2  
BYPASS  
GND  
A2  
C2  
C1  
Bypass capacitor pin which provides the common mode voltage  
Ground  
B1 & B2  
ORDERING INFORMATION  
PART NUMBER  
TEMPERATURE RANGE  
PACKAGE  
GAIN (dB)  
HM4990A  
HM4990M  
-40°C to +85°C  
-40°C to +85°C  
COL1.5X1.5-9L  
MSOP-8L  
Adjustable  
Adjustable  
2
HM4990  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
VALUE  
Supply voltage, VDD  
-0.3V to 6.0V  
0.3V to VDD+0.3V  
65°C to +150°C  
Internally Limited  
2000V  
All other pins  
Storage temperature  
Power dissipation  
ESD ratings - Human Body Model ( HBM)  
Junction temperature  
150°C  
θJC  
56°C/W  
θJA  
190°C/W  
Maximum soldering temperature (@10 sec duration)  
260°C  
Note: Stresses beyond those listed under absolute maximun ratings may cause permanent damage to the device. These are stress ratings only,and  
functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not  
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
RECOMMENDED OPERATING CONDITIONS  
CONDITIONS  
MIN  
2.5  
-40  
6.4  
TYP  
MAX  
UNIT  
V
PARAMETER  
Supply voltageVDD  
Operating free-air temperature, TA  
Load impedance, ZL  
5.5  
85  
°C  
8
3
HM4990  
ELECTRICAL CHARACTERISTICS  
VDD=5V.  
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for  
TA=25°C.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
VIN=0V, IO=0A, No Load  
VIN=0V, IO=0A, 8Load  
VSD= 0  
2.5  
3
5
7
mA  
mA  
μA  
mV  
V
IDD  
Quiescent current  
ISD  
Shutdown current  
0.1  
7
2.0  
50  
VOS  
Output offset voltage  
SD pin HIGH input voltage  
SD pin LOW input voltage  
VSDIH  
VSDIL  
1.5  
0.9  
0.5  
V
ROUT  
Resistor output to GND  
16  
kΩ  
PO  
Output power (8)  
THD+N=1%f=1KHz  
1.25  
130  
0.2  
W
ms  
%
TWU  
Wake-up time  
CB=1uF  
THD+N  
Total Harmonic Distortion+Noise PO = 0.5Wrms; f=1KHz  
ripple=200mV sine p-p  
V
55  
55  
66  
76  
Input grounded, f=217HZ  
Vripple=200mV sine p-p  
Input grounded, f=1KHZ  
PSRR  
Power Supply Rejection Ratio  
dB  
VDD=3V.  
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for  
TA=25°C.  
MIN  
SYMBOL  
PARAMETER  
CONDITIONS  
TYP  
MAX  
UNIT  
VIN=0V, IO=0A, No Load  
VIN=0V, IO=0A, 8Load  
VSD= 0  
1.6  
2
4
mA  
mA  
μA  
mV  
V
IDD  
Quiescent current  
5
ISD  
Shutdown current  
0.1  
7
2.0  
50  
VOS  
Output offset voltage  
SD pin HIGH input voltage  
SD pin LOW input voltage  
Resistor output to GND  
Output power (8)  
VSDIH  
VSDIL  
ROUT  
PO  
1.3  
0.4  
V
16  
K  
mW  
ms  
%
THD+N=1%f=1KHz  
CB=1uF  
425  
130  
0.16  
TWU  
Wake-up time  
THD+N  
Total Harmonic Distortion+Noise  
PO = 0.25Wrms; f=1KHz  
V
ripple=200mV sine p-p  
55  
66  
Input grounded, f=217Hz  
Vripple=200mV sine p-p  
Input grounded, f=1KHz  
PSRR  
Power Supply Rejection Ratio  
dB  
55  
76  
4
HM4990  
TYPICAL PERFORMANCE CHARACTERISTICS  
THD+N vs Outpout Power  
THD+N vs Outpout Power  
10  
10  
VDD=3V, RL=8Ω  
VDD=5V, RL=8Ω  
1
1
0.1  
0.1  
1
10  
100  
1000  
1
10  
100  
1000  
10000  
Output Power(mW)  
Output Power(mW)  
Figure 2  
Figure 3  
THD+N vs Frequency  
THD+N vs Frequency  
10  
10  
1
1
0.1  
0.1  
VDD=5V,RL=8Ω,Po=800mW  
VDD=3V,RL=8Ω,Po=250mW  
0.01  
0.01  
10  
100  
1000  
10000  
100000  
10  
100  
1000  
10000  
100000  
Frequency(Hz)  
Frequency(Hz)  
Figure 4  
Figure 5  
Output Power vs Supply Voltage  
Output Power vs Supply Voltage  
1800  
2000  
1800  
1600  
1400  
1200  
1000  
800  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
600  
RL=8Ω,THD+N=10%  
400  
RL=8Ω,THD+N=1%  
200  
0
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
Supply Voltage(V)  
Supply Voltage(V)  
Figure 6  
Figure 7  
5
HM4990  
Power Dissipation vs Output Power  
Power Dissipation vs Output Power  
250  
200  
150  
100  
50  
700  
600  
500  
400  
300  
200  
100  
0
VDD=5V,RL=8Ω  
VDD=3V,RL=8Ω  
0
0
300  
600  
900  
1200  
1500  
1800  
0
100  
200  
300  
400  
500  
600  
Output Power(mW)  
Output Power(mW)  
Figure 8  
Figure 9  
PSRR vs Frequency  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
VDD=5V, 8Ω Load, input grounded  
10  
100  
1000  
10000  
100000  
Frequency(Hz)  
Figure 10  
6
HM4990  
APPLICATION INFORMATION  
BRIDGE CONFIGURATION EXPLANATION  
As shown in Figure 1, the HM4990 has two internal operational amplifiers. The first amplifier’s gain is externally  
configurable, while the second amplifier is internally fixed in a unity-gain, inverting configuration. The  
closed-loop gain of the first amplifier is set by selecting the ratio of RF to RI while the second amplifier’s gain is  
fixed by the two internal 20kresistors. Figure 1 shows that the output of amplifier one serves as the input to  
amplifier two which results in both amplifiers producing signals identical in magnitude, but out of phase by 180°.  
Consequently, the differential gain for the IC is  
AVD= 2*(RF/RI)  
By driving the load differentially through outputs Vo1 and Vo2, an amplifier configuration commonly referred to  
as “bridged mode” is established. Bridged mode operation is different from the classical single-ended amplifier  
configuration where one side of the load is connected to ground.  
A bridge amplifier design has a few distinct advantages over the single-ended configuration, as it provides  
differential drive to the load, thus doubling output swing for a specified supply voltage. Four times the output  
power is possible as compared to a single-ended amplifier under the same conditions. This increase in  
attainable output power assumes that the amplifier is not current limited or clipped. In order to choose an  
amplifier’s closed-loop gain without causing excessive clipping, please refer to the Audio Power Amplifier  
Design section.  
A bridge configuration, such as the one used in HM4990, also creates a second advantage over single-ended  
amplifiers. Since the differential outputs, Vo1 and Vo2, are biased at half-supply, no net DC voltage exists  
across the load. This eliminates the need for an output coupling capacitor which is required in a single supply,  
single-ended amplifier configuration. Without an output coupling capacitor, the half-supply bias across the load  
would result in both increased internal IC power dissipation and also possible loudspeaker damage.  
POWER DISSIPATION  
Power dissipation is a major concern when designing a successful amplifier, whether the amplifier is bridged or  
single-ended. A direct consequence of the increased power delivered to the load by a bridge amplifier is an  
increase in internal power dissipation. Since the HM4990 has two operational amplifiers in one package, the  
maximum internal power dissipation is 4 times that of a single-ended amplifier. The maximum power  
dissipation for a given application can be derived from the power dissipation graphs or from Equation 1.  
PDMAX = 4*(VDD)2/(2π2RL)  
(1)  
It is critical that the maximum junction temperature TJMAX of 150°C is not exceeded. TJMAX can be determined  
from the power derating curves by using PDMAX and the PC board foil area. By adding copper foil, the thermal  
resistance of the application can be reduced from the free air value of θJA, resulting in higher PDMAX values  
without thermal shutdown protection circuitry being activated. Additional copper foil can be added to any of the  
leads connected to the HM4990. It is especially effective when connected to VDD, GND, and the output pins. Refer  
to the application information on the HM4990 reference design board for an example of good heat sinking. If TJMAX  
still exceeds 150°C, then additional changes must be made. These changes can include reduced supply  
voltage, higher load impedance, or reduced ambient temperature. Internal power dissipation is a function of  
output power.  
7
HM4990  
POWER SUPPLY BYPASSING  
As with any amplifier, proper supply bypassing is critical for low noise performance and high power supply  
rejection. The capacitor location on both the bypass and power supply pins should be as close to the device as  
possible. Typical applications employ a 5V regulator with 10μF tantalum or electrolytic capacitor and a ceramic  
bypass capacitor which aid in supply stability. This does not eliminate the need for bypassing the supply nodes  
of the HM4990. The selection of a bypass capacitor, especially CB, is dependent upon various design  
considerations such as PSRR requirements, pop and click performance, system cost, and size constraints.  
SHUTDOWN FUNCTION  
In order to reduce power consumption while not in use, the HM4990 contains shutdown circuitry. This shutdown  
turns the amplifier off when logic low is placed on the SD pin. By asserting the shutdown pin to GND, the HM4990  
supply current draw will be minimized in idle mode.  
In many applications, a microcontroller or microprocessor output is used to control the shutdown circuitry,  
which provides a quick, smooth transition to shutdown. Another solution is to use a single-throw switch in  
conjunction with an external pull-down resistor. This scheme guarantees that the shutdown pin will not float,  
thus preventing unwanted state changes.  
PROPER SELECTION OF EXTERNAL COMPONENTS  
Proper selection of external components in applications using integrated power amplifiers is critical to optimize  
device and system performance. While the HM4990 is tolerant of external component combinations, consideration  
to component values must be used to maximize overall system quality.  
The HM4990 is unity-gain stable which gives the designer maximum system flexibility. The HM4990 should be used in  
low gain configurations to minimize THD+N values, and maximize the signal to noise ratio. Low gain  
configurations require large input signals to obtain a given output power. Input signals equal to or greater than  
1Vrms are available from sources such as audio codec. Besides gain, one of the major considerations is the  
closed loop bandwidth of the amplifier. To a large extent, the bandwidth is dictated by the choice of external  
components shown in Figure 1. The input coupling capacitor, CI, forms a first order high pass filter which limits  
low frequency response. This value should be chosen based on needed frequency response for a few distinct  
reasons.  
SELECTION OF INPUT CAPACITOR SIZE  
Large input capacitors are both expensive and space hungry for portable designs. Clearly, a certain sized  
capacitor is needed to couple in low frequencies without severe attenuation. But in many cases the speakers  
used in portable systems, whether internal or external, have little ability to reproduce signals below 100Hz to  
150Hz. Thus, using a large input capacitor may not increase actual system performance.  
In addition to system cost and size, pop and click performance is also affected by the size of the input coupling  
capacitor, CI. A larger input coupling capacitor requires more charge to reach its quiescent DC voltage  
(nominally 1/2 VDD). This charge comes from the output via the feedback and is apt to create pops upon device  
enable. Thus, by minimizing the capacitor size based on necessary low frequency response, turn-on pops can  
be minimized.  
Besides minimizing the input capacitor size, careful consideration should be paid to the bypass capacitor value.  
Bypass capacitor, CB, is the most critical component to minimize turn-on pops since it determines how fast the  
HM4990 turns on. The slower the HM4990’s outputs ramp to their quiescent DC voltage (nominally 1/2 VDD), the  
8
HM4990  
smaller the turn-on pops. Choosing CB equal to 1.0μF along with a small value of CI (in the range of 0.1μF to  
0.39μF), should produce a virtually click-less and pop-less shutdown function. While the device will function  
properly with CB equal to 0.1μF, the device will be much more susceptible to turn-on pops and clicks. Thus, a  
value of CB equal to 1.0μF is recommended in all but the most cost sensitive designs.  
AUDIO POWER AMPLIFIER DESIGN EXAMPLE  
A 1W/8Audio Amplifier  
Given that  
Power Output:  
Load Impedance:  
Input Level:  
1Wrms  
8Ω  
1Vrms  
Input Impedance:  
Bandwidth:  
20kΩ  
100Hz – 20kHz ± 0.25dB  
A designer must first determine the minimum supply rail to obtain the specified output power. By extrapolating  
from the Output Power VS Supply Voltage graphs in the Typical Performance Characteristics section, the  
supply rail can be easily found.  
5V is a standard voltage in most applications, it is chosen for the supply rail. Extra supply voltage creates  
headroom that allows the HM4990 to reproduce peaks in excess of 1W without producing audible distortion. At  
this time, the designer must make sure that the power supply choice along with the output impedance does not  
violate the conditions explained in the Power Dissipation section.  
Once the power dissipation equations have been addressed, the required differential gain can be determined  
from Equation 2.  
AVD (P RL )/(VIN ) VORMS /VIRMS  
(2)  
o
RF/RI = AVD/2  
From Equation 2, the minimum AVD is 2.83; use AVD = 3. Since the desired input impedance was 20k, and  
with a AVD impedance of 2, a ratio of 1.5:1 of RF to RI results in an allocation of RI = 20kand RF = 30k. The  
final design step is to address the bandwidth requirements which must be stated as a pair of 3dB frequency  
points. Five times away from a 3dB point is 0.17dB down from passband response which is better than the  
required ±0.25dB specified.  
fL = 100Hz/5 = 20Hz  
fH = 20kHz * 5 = 100kHz  
RI in conjunction with CI creating a high-pass filter  
CI 1/(2π*20k*20Hz) = 0.397μF; use 0.39μF  
The high frequency pole is determined by the product of the desired frequency pole, fH, and the differential gain,  
AVD. With a AVD = 3 and fH = 100kHz, the resulting GBWP = 300kHz which is much smaller than the HM4990  
GBWP of 2.5MHz. This figure displays that if a designer has a need to design an amplifier with a higher  
differential gain, the HM4990 can still be used without running into bandwidth limitations.  
The HM4990 is unity-gain stable and requires no external components besides gain-setting resistors, an input  
9
HM4990  
coupling capacitor, and proper supply bypassing in the typical application. However, if a closed-loop differential  
gain of greater than 10 is required, a feedback capacitor (C4) may be needed as shown in Figure 11 to  
bandwidth limit the amplifier. This feedback capacitor creates a low pass filter that eliminates possible high  
frequency oscillations. Care should be taken when calculating the -3dB frequ6ency in that an incorrect  
combination of R3 and C4 will cause a roll-off lower than 20kHz. A typical combination of feedback resistor and  
capacitor that will not produce audio band high frequency roll off is R3 = 20kand C4 = 25pf. These  
components result in a -3dB point of approximately 320kHz.  
Figure 11: High Gain Audio Amplifier  
Differential Input Application  
The schematic in Figure 12 shows how to design the HM4990 to work in a differential input mode.  
The gain of the amplifier is:  
AVD= 2 *(R3/R2), Given that R2=R5R3=R6  
In order to reach the optimal performance of the differential function, R2 and R5, or R3 and R6 should be  
matched at 1% max.  
Figure 12: Differential Amplifier Configuration For HM4990  
10  
HM4990  
PHYSICAL DIMENSIONS  
HM4990A --COL1.5X1.5-9L (P0.50T0.50/0.60) PACKAGE OUTLINE DIMENSIONS  
Top View  
Bottom View  
Side View  
Unit: millimeters.  
11  
HM4990  
HM4990M MSOP8 Package  
REF  
A
MIN  
--  
TYP  
1.10  
0.10  
0.86  
3.0  
MAX  
--  
A1  
A2  
D
0.05  
0.78  
2.90  
2.90  
4.75  
0.4  
0.15  
0.94  
3.1  
3.1  
5.05  
0.7  
--  
E
3.0  
HE  
L
4.9  
0.55  
0.95  
0.30  
0.15  
0.65  
L1  
b
--  
0.22  
0.08  
--  
0.38  
0.23  
--  
c
e
Unit: millimeters.  
12  

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