HM61C092C372LL [HMSEMI]
Low Power Voltage Detector;
| 型号： | HM61C092C372LL |
| 厂家： | 
H&M Semiconductor |
| 描述： | Low Power Voltage Detector |
| 文件： | 总12页 (文件大小：1202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HM61 series
Low Power Voltage Detector
Features
Low power consumption
High input voltage (up to 12V)
Low temperature coefficient
Output voltage accuracy: tolerance ±1% or ±2%
TO92, SOT89 and SOT23 package
Built-in hysteresis characteristic
Applications
Battery checkers
Microcomputer reset
Level selectors
Battery memory backup
Power failure detectors
Non-volatile RAM signal storage protectors
General Description
HM61
The
series devices area set of three
hysteresis circuit, and an output driver (CMOS
inverter or NMOS open drain). CMOS technology
ensures low power consumption.
terminal low power voltage detectors implemented
in CMOS technology. Each voltage detector in the
series detects a particular fixed voltage ranging
from 0.9V to 5.0V. The voltage detectors consist of
a high-precision and low power consumption
standard voltage source as well as a comparator,
Selection Table
Although designed primarily as fixed voltage
detectors, these devices can be used with external
components to detect user specified threshold
voltages.
Part No.
Det. Voltage
0.9V
0.9V
1.0V
1.0V
1.1V
1.1V
1.2V
1.2V
…
Hys. Width
4%
Output
CMOS
NMOS
CMOS
NMOS
CMOS
NMOS
CMOS
NMOS
…
Tolerance
±2%
±2%
±2%
±2%
±2%
±2%
±2%
±2%
±2%
±2%
±2%
Package
HM61C092XX
HM61N092XX
HM61C102XX
HM61N102XX
4%
4%
4%
TO92
SOT89
HM61C112XX
HM61N112XX
HM61C122XX
HM61N122XX
…
4%
4%
SOT23-3
SOT23-5
4%
4%
4%
HM61C502XX
HM61N502XX
5.0V
5.0V
4%
CMOS
NMOS
4%
Order Information
HM61
ꢀ
①②③④⑤⑥⑦
DESIGNATOR
DESCRIPTION
DESIGNATOR
DESCRIPTION
Package Type:
Output Configuration:
C=CMOS
M=SOT23-3
P=SOT89
①
N=N-ch open drain
⑥
⑦
N=SOT25
Detect Voltage
25=2.5V
T=TO-92(Standard)
②③
L=TO-92(Custom pin configuration
38=3.8V
Device Orientation:
Output Delay
0=No delay
R=Embossed Taped(Right)
L=Embossed Taped(Left)
H=Paper Type(TO-92)
B=Bag(TO-92)
④
⑤
Detect Accuracy:
2=with±2%
Ver1.1
1
Oct 3,2011
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM61 series
Low Power Voltage Detector
Block Diagram
Output Table & Curve
VDD≤VDET(-)
VSS
VDD
VOUT
VDD>VDET(+)
Hi-Z
Pin Assignment
Ver1.1
2
Oct 3,2011
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
Marking Rule
①Represents the output configuration
Symbol
C
Product Description
◆◆◆◆◆◆◆
HM61
②Represents the Output configuration and detect voltage range
DESIGNATOR OUTPUT CONFIGURATION
VOLTAGE RANGE（V）
0.1～3.0
A
B
N
P
CMOS
CMOS
3.1～6.0
OPEN DRAIN
OPEN DRAIN
0.1～3.0
3.1～6.0
③Represents the detect voltage
DESIGNATOR
DETECT VOLTAGE（V）
DESIGNATIOR
DETECT VOLTAGE（V）
1.6 1.65 4.65
0
1
2
3
4
5
6
7
8
9
A
B
C
D
E
-
-
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
-
-
3.15
F
H
K
L
M
N
P
R
S
T
U
V
X
Y
Z
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6.0
3.25
3.35
3.45
3.55
3.65
3.75
3.85
3.95
4.05
4.15
4.25
4.35
4.45
4.55
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
1.75 4.75
1.85 4.85
1.95 4.95
2.05 5.05
2.15 5.15
2.25 5.25
2.35 5.35
2.45 5.45
2.55 5.55
2.65 5.65
2.75 5.75
2.85 5.85
2.95 5.95
3.05 6.05
-
-
-
-
-
-
-
-
-
-
-
-
0.9
1.0
1.1
1.2
1.3
1.4
1.5
-
-
-
-
-
-
1.55
④Based on internal standards
0～9，A～Z repeated G，I，J，O，Q，W are excepted）
Ver1.1
3
Oct 3,2011
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM61 series
Low Power Voltage Detector
Absolute Maximum Ratings
Supply Voltage ................................-0.3V to 12V
Storage Temperature ..................-50℃ to 125℃
Operating Temperature .................-40℃ to 85℃
Note: These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum
Ratings” may cause substantial damage to the device. Functional operation of this device at other
conditions beyond those listed in the specification is not implied and prolonged exposure to extreme
conditions may affect device reliability.
Thermal Information
Symbol
Parameter
Package
Max.
Unit
SOT23
500
℃/W
Thermal Resistance (Junction to
Ambient) (Assume no ambient
airflow, no heat sink)
SOT89
TO92
200
200
θ
℃/W
℃/W
JA
SOT23
SOT89
TO92
0.20
0.50
0.50
W
W
W
PD
Power Dissipation
Note: PD is measured at Ta= 25℃
Electrical Characteristics
VDF=0.8V~5.0V
Ta=25℃
Symbol
VDET
Parameter
Test Conditions
Min.
Typ.
VDF
Max.
Unit
V
VDF=0.8V~2.2V
VDF=2.3V~5.0V
Detection Voltage
Hysteresis Width
VDF*0.98
VDF*1.02
0.02
0.04
VDET
0.7
0.8
0.9
1.0
1.1
-
0.08
VDET
2.3
2.7
3.0
3.2
3.6
10
VHYS
-
V
VDET
Vin=1.5V
Vin=2.0V
Vin=3.0V
Vin=4.0V
Vin=5.0V
-
-
-
IDD
Operating Current
-
-
μA
-
VDD
IOL
Operating Voltage
Output Sink Current
-
0.7
V
2V
VOUT=0.2V
0.5
-
1
-
-
mA
VDET
VDF Ta
-25℃
Temperature
Coefficient
±
-
ppm/℃
<Ta<125℃
100
Ver1.1
4
Oct 3,2011
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM61 series
Low Power Voltage Detector
Typical Performance Characteristics
(1) Output Voltage vs Input voltage
(2) Supply Current vs. Input Voltage
(3) Detect, Release Voltage vs. Ambient Temperature
Ver1.1
5
Oct 3,2011
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM61 series
Low Power Voltage Detector
Application Circuits
Microcomputer Reset Circuit
Normally a reset circuit is required to
protect the microcomputer system from
malfunctions due to power line inter-
rupttions. The following examples
show how different output configure-
tions perform a reset function in
various systems.
NMOS open drain output application
for separate power supply
HM61NXX2PR
5V Power Line Monitoring Circuit
Generally, minimum operating
a
NMOS open drain output application
with R-C delay
voltage of 4.5V is guaranteed in a 5V
power line system. The HM61 is
recommended for use as 5V power line
monitoring circuit.
HM61NXX2PR
5V power line monitor with power-on
reset
Power-on Reset Circuit
With several external components, the
NMOS open drain type of the
HM61 series can be used to
perform a power-on reset function as
shown:
HM61NXX2PR
With 5V voltage regulator
HM61NXX2PR
Ver1.1
6
Oct 3,2011
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM61 series
Low Power Voltage Detector
HM61N502
Malfunction Analysis
The following circuit demonstrates the
way a circuit analyzes malfunctions by
monitoring the variation or spike noise
of power supply voltage.
HM61NXX2PR
Change of Detectable Voltage
If the required voltage is not found in
the standard product selection table, it
is possible to change it by using
external resistance dividers or diodes.
Varying the detectable voltage with a
resistance divider
HM61NXX2PR
Charge Monitoring Circuit
The following circuit shows a charged
monitor for protection against battery
deterioration by overcharging. When
the voltage of the battery is higher than
the set detectable voltage, the
transistor turns onto bypass the charge
current, protecting the battery from
overcharging.
HM61NXX2PR
HM61NXX2PR
Varying the detectable voltage with a
diode
HM61NXX2PR
Level Selector
The following diagram illustrates a logic level selector.
Ver1.1
7
Oct 3,2011
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM61 series
Low Power Voltage Detector
HM61N502PR
HM61N392PR
Ver1.1
8
Oct 3,2011
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM61 series
Low Power Voltage Detector
Package Information
3-pin TO92 Outline Dimensions
Ver1.1
9
Oct 3,2011
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM61 series
Low Power Voltage Detector
3-pin SOT89 Outline Dimensions
Ver1.1
10
Oct 3,2011
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM61 series
Low Power Voltage Detector
3-pin SOT23-3 Outline Dimensions
Ver1.1
11
Oct 3,2011
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM61 series
Low Power Voltage Detector
5-pin SOT23-5 Outline Dimensions
Ver1.1
12
Oct 3,2011
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
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