HM6311 [HMSEMI]
1μA Ultra low lq, 0.8v startup, 1A synchronous boost;型号: | HM6311 |
厂家: | H&M Semiconductor |
描述: | 1μA Ultra low lq, 0.8v startup, 1A synchronous boost |
文件: | 总7页 (文件大小:652K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HM6311
1μA Ultra lo
w
Iq, 0.8V Startup,1A Synchronous Boost
DESCRIPTION
FEATURES
HM6311 is a high efficiency synchronous step-up
low quiesc cur down to 1μA. It is capable of delivering at least
2W of power from a low voltage source, i.e. 0.4A at 5V output. It also
converter with ultra-
Ultra low IQ when No Switching :1uA for adjustable
version and 1.2uA for fixed voltage version
0.8V Startup
e
nt
rent
featur
e
s
a
true-sh
u
t
o
ff fun
c
tion tha
t
-
disconnec
circuit
rnal MOSFET and its
the input from output and provides robust output overload protection.
t
s
the input fr
This elimina
ol circuitry
o
m
o
u
tput
,
5V/0.4A Output Capability at Vin=3V
during shutdown and output shor
the need for an ex
t
c
o
nditions
.
tes
Output to Input Reversed
Up to 94% Efficiency
Current Protection
t
e
c
on
t
r
to
disconnec
t
Internal Synchronous Rectifier and Output Disconnect
Short-circuit Protection
A switching frequency of 1.4MHz minimiz
e
s
solution footprint by
mic
capacitors. An internal synchronous MOSFET provides highest
efficiency and with curren mode control that is in rnall
ompensa ex rnal par count is reduced to minimal. With the
ultra-low Iq fea
standby power an
allowing the use of tiny and low profile inductors and
cera
Adjustable versio
n and Fixed voltage version
SOT23-6 DFN2x2-6 Package
&
a
t
te
y
c
te
d,
te
ts
APPLIC
ATIONS
ture,
HM6311 is ideal for solution that requires low
d
co
mpac
t
board
size such as Io
T
applic
a
tions
.
Tablet, MID
Smart Phone
HM6311 is housed in
a SOT23-6 and DFN2x2-6 package
Power
Ba
nk
T
YPICAL APPLICATION
2.2uH
VI
N
6
4
3
S
W
OUT
1
5
2
VO
U
T
22pF
R1
R2
Optional
10uF
IN
FB
4.7uF
E
N
GND
EN
A
B
L
E
R2≤2Mohm
*
Pin nu
m
b
er is just
f
or SOT23-6 package
,
adjustable version
*
Fo
r
fixed
vol
t
ag
e
vers
io
n
,
R1
,
R
2 and 22p
F
are
not needed and pin5 is NC.
PART No
.
V
e
rsion
P
A
CK
A
GE
TOP
M
ARK
Pcs/Reel
ORDERING INFORMATION
HM6311MR
Ad
justable
SOT23-6
SOT23-6
SOT23-6
DFN2x2-6
DFN2x2-6
DFN2x2-6
PBY
W
3000
3000
3000
3000
3000
3000
HM6311P33MR
HM6311P50MR
HM6311DR
Fixed 3.3V
Fixed 5.0V
O
O
u
tput
tput
PLY
W
u
PVY
P6
W
W
Ad
justable
Y
HM6311P33DR
HM6311P50DR
Fixed 3.3V
Fixed 5.0V
O
O
u
tput
tput
PiYW
u
P
wYW
HM6311
PIN CONFIGURATION
ABSOLUTEMAXIMUM
(Note: Exceeding these limits may damage th
R
e
A
TINGS
device. Exposu
re to absolute maximum
rating conditions ng periods ff devic
f
o
r
l
o
m
a
y
a
e
c
t
e
r
e
liability.)
1
2
3
6
5
4
6
5
4
GND
OUT
FB
1
2
3
IN
OU
T
SW
FB
IN OUT
,
SW
,
FB,
EN
Vo
ltage...............................-0.3V
................................In ernall
nge ......................–40°C
t
o
6.5V
HM6311
HM6311
SW
EN
GND
Ad
j
u
s
t
a
b
le
Ve
r
s
i
o
n
Ad
j
u
s
t
a
b
le
Ve
r
sion
SW
to
ground curren
t
t
y
limited
EN
IN
O
p
erating Temperature
R
a
to
85°C
S
t
or
a
ge
T
e
mper
a
t
ur
e
R
a
nge ........................–55°C
θJA θJC
SOT23-6...............................180.............90................
DFN2x2-6..............................80..............30................
ead Temperature (Soldering 10ssec) .......................260
t
o
150°C
SOT23-6
DF
N2x2-6
Thermal Resistance
°
°
C/W
C/W
6
GND
OUT
1
2
IN
1
6
OUT
GND
EN
SW
IN
L
°
C
HM6311
HM6311
5
4
S
W
2
3
5
4
F
ix
e
d Voltage Ve
r
s
i
o
n
F
ix
e
d Voltage Ve
r
s
i
o
n
ESD HBM (Human
B
ody Mode) .....................................2KV
3
EN
ESD MM (Machine Mode) ...........................................200V
SOT
23-6
DFN
2x
2
-
6
ELECTRICAL CHACRACTERISTICS
(VIN=3.6V, VOUT
=
5
V, unless oth
e
r
wi
se spec
i
fie
d.
Typic
a
l
values are a
t
TA
=
25
°
C.
)
PARAMETER
CONDITIONS
VEN=IN, No load,
MIN
TYP
1
MAX
2
UNIT
S
Q
Q
u
u
iescen
t
C
urr
e
n
t
a
t
OUT
,
adjustable version
fix voltage version
N
o
t
switching
μA
iescen
t
Curr
e
nt
at
OUT
,
e
d
VEN=IN, No load
,
Not switching
1.2
0.32
0.8
2.5
μA
Shutdown Suppl
y
C
urren
t
at
IN
VEN =GND
IOUT=1mA
μA
IN
S
t
artupVoltage
ion Voltage
V IN
V
O
O
O
p
er
a
t
Af
ter
St
art-up
0.6
4.85
3.2
5
5.15
3.4
u
u
tput
tput
Voltage
a
t
t
5V
5
V
Voltage
a
3.3V
3.3
V
F
eedback Voltage
1.076
1.11
1.4
1.144
V
S
w
itching Frequency
MH
z
NMOS
PMOS
S
w
itch
O
n
Resistance
Resistance
ISW=100mA
ISW=100mA
250
160
mΩ
Sw
itch
O
n
mΩ
μA
VOUT=5.2V, VEN=GND, VSW=5.2V or
SW
Leakage
C
urren
t
10
VSW
=
0V
NMOS
S
w
i
t
ch
C
urr
e
n
t
Limit
1
1
A
A
S
t
art-up
C
urr
e
nt
Limit
ON
1.3
33
ms
ms
Shor
t
Ci
rcuit Hiccup time
OFF
E
N
Input
C
urren
t
VEN=5V or 0V
-1
1.2
0
1
μA
EN
H
igh Voltage
VOUT=5V
V
V
EN low Voltage
VOUT=5V
0.3
Thermal Shutdown
Rising, Hysteresis=25°C
155
°C
HM6311
PIN DESCRIPTION
SOT23-6
DFN2x2-6
NAME
DESCRIPTION
PIN
1
#
PIN
2
#
OUT
GND
EN
Output pin. Bypass with
Ground Pin
a
4.7μF or larger ceramic capacitor closely between this pin and
G
N
D
2
1
3
4
Enable pin for the
I
C
. Drive this pin high to
4.7μF cerami
Feedback Input. Add an external resistor divider from the OUT to FB and GND to set VOUT for adjustable
e
nable the part, low to disable
.
4
6
IN
Input Supply Voltage. Bypass with
a
c
capacitor to GND
5
3
FB
output voltage. There is no
F
B
pin for fixed voltage version. The pin is “Not Connected”.
or Between SW and the regulator output.
6
5
SW
Inductor Connection. Connect an indu
c
t
TYPICAL CHARACTERISTICS
(Typical val
ues
are a
t
TA
=
25oC unless otherwise
sp
ecifie
d.)
Vo
ut
Vs.
I
o
ut
Ef
f.
Vs.
Iou
t
4
3.5
3
100%
90%
80%
70%
60%
50%
40%
30%
Vout=3.3V
Vout=3.3V
2.5
2
1.5
1
Vin=0.8V
Vin=3V
Vin=1V Vin=2V
Vin=3.3V
Vin=0.8V
Vin=3V
Vin=1V Vin=2V
Vin=3.3V
0.5
0
Vin=3.7V
Vin=3.7V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.001
0.01
0.1
1
10
100
1000
Iout (A)
Iout (mA)
V
o
ut
V
s
.
I
o
ut
Eff. Vs. Iout
4.5
4
100%
90%
80%
70%
60%
50%
40%
Vout=3.6V
3.5
3
2.5
2
1.5
1
Vin=0.8V
Vin=3V
Vin=1V Vin=2V
Vin=3.3V
Vin=0.8V
Vin=3V
Vin=1V Vin=2V
Vin=3.3V
0.5
0
Vout=3.6V
0.1
Vin=4.2V
Vin=4.2V
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.001
0.01
0.1
1
10
100
1000
Iout (A)
Iout (mA)
HM6311
TYPICAL CHARACTERISTICS cont’
(Typical val
ues
are a
t
TA
=
25oC unless otherwise
sp
ecified.)
V
o
ut
V
s
.
I
o
ut
Ef
f
.
Vs.
Iou
t
6
5
4
3
2
1
100%
90%
80%
70%
60%
50%
40%
30%
Vout=5V
Vout=5V
Vin=0.8V
Vin=3V
Vin=1V
Vin=4V
Vin=2V
Vin=0.8V
Vin=3V
Vin=1V
Vin=4V
Vin=2V
Vin=4.5V
Vin=4.5V
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.001
0.01
0.1
1
10
100
1000
Iout (A)
Iout (mA)
UVL
O
I_noload Vs Vin
6
5
4
3
2
1
14
12
10
8
Iout
= 1mA
Iout=0A
3.3V OU
T
6
5.0V OU
T
2.8V Rising
3.3V Rising
3.6V Rising
5V Rising
2.8V Falling
3.3V Falling
3.6V Falling
5V Falling
4
2
0
0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Vin (V)
Vin (V)
APPLICATION INFORMATION
Loop Operation
HM6311 is a high efficiency synchronous step-up
c
o
n
v
er
t
e
r
with ultra-low quiescen
t
curren
t
down to 1μA. It integrates a 250mΩ Low Side
Main MOSFET and 160mΩ synchronous MOSFET. It uses a PWM current-mode control scheme. An error amplifier integrates error betwee
the FB signal and the internal reference voltage. The output of the integrator is then compared the su of current-sense signal and the
PWM signal that modulates the duty cycle of the power MOSFETs to achieve regulation
n
to
m
a
slope compensation ramp. This operation generates
for output voltage.
a
The peak current of the NMOS switch is also sensed
peak current limit is set to 1A. An internal temperature sensor prevents
dissipation.
t
o
limit the maximum current flowing through the switch and the inductor. Th
e
typical
the device from getting overheated in case of excessive power
Ultra low current con
sumption at Light
L
o
ad Operati
o
n
HM6311
Traditionally,
a
fix
ed
constant frequency PWM DC/DC regulator always switches even when the output load is small. When energy
i
s
shuffling
back and forth through the power MOSFETs, power
is
lost due to the finite RDSONs of the MOSFETs and parasitic capacitances. At light load,
this loss is prominent and efficiency is therefore very low. HM6311 employs a proprietary control scheme that improves efficiency in this
situation by enabling the device into
a power saving mode during light load and the no load quiescent current can be as low as 1μA.
Short-Circuit Protection
Unlike most step-up converters, the HM6311 allows for short circui
NMOS when the sensed current reaches the current limit. When OUT drops below IN, the device then enters
current limited same as with the start-up period. In addition, the thermal shutdown circuits disable switching if the die
t
s
on the output. In the even
t
of
a
short circuit, the devic
linear charge period with the
emper ture rises
e first turns off the
a
t
a
above 155°C.
Adjustable Output Voltage Setting with FB pin
By adding a resistor divider at FB pin (R1 and R2 as shown in the circuit below), HM6311 can be set to any voltage level less than 5V at
output node. The R2 is recommended to be 2Mohm or less, which will add about 0.5uA or more at output. The output voltage is set by
following equation:
R1+R2
Vout=
×1.11V
R2
Application Circuit of Fixed Voltage Version
2.2uH
VI
N
VO
U
T
6
4
3
S
W
OUT
1
2
HM6311
10uF
IN
4.7uF
EN
A
B
L
E
E
N
GND
BLOCK DIAGRAM
EN
IN
FB
OUT
UV
Ther
L
mal
O
&
REF
shu
td
o
wn
+
EA
-
PW
M
Σ
SW
DRIVER
Lo
g
i
c
OSC
Slo
pe
Co
mp
GND
HM6311
PCB GUIDELINES
PCB layout example for SOT23-6 package
PCB layout example for DFN2x2-6 package
HM6311
PACKAGE OUTLINE
Package:
S
OT23-6
Pa
ckage: DFN2x2-6
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