首页 |元器件品牌

HMG15N65D [HMSEMI]

650V /15A Trench Field Stop IGBT;
HMG15N65D
型号： HMG15N65D
厂家： H&M Semiconductor    H&M Semiconductor
描述：

650V /15A Trench Field Stop IGBT

双极性晶体管
文件： 总10页 (文件大小：1516K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
HMG15N65/D/F  
650V /15A Trench Field Stop IGBT  
Features  
Max Junction Temperature 150°C  
VCE  
IC  
650  
15  
V
A
V
High breakdown voltage up to 650V for  
improved reliability  
Short Circuit Rated  
VCE(SAT) IC=15A  
1.65  
Very Low Saturation Voltage:  
V
CE(SAT) = 1.65V (Typ.) @ IC = 15A  
Soft current turn-off waveforms  
Applications  
Soft switching applications  
Air conditioning  
Motor drive inverter  
Product  
Package  
TO-220  
TO-263  
TO-220F  
Packaging  
HMG15N65  
HMG15N65D  
HMG15N65F  
Tube  
Tube  
Tube  
HMG15N65/D/F  
650V /15A Trench Field Stop IGBT  
Maximum Ratings （Tj= 25℃unless otherwise specified）  
Parameter  
Symbol  
Value  
Unit  
Collector-Emitter Breakdown Voltage  
VCE  
650  
V
DC collector current, limited by Tjmax  
TC = 25°C  
TC = 100°C  
IC  
30  
15  
A
A
Diode Forward current, limited by Tjmax  
TC = 25°C  
TC = 100°C  
IF  
30  
15  
Continuous Gate-emitter voltage  
Transient Gate-emitter voltage  
VGE  
VGE  
V
V
±20  
±30  
Turn off safe operating area VCE ≤650V,  
Tj ≤ 150°C  
-
60  
45  
5
A
A
Pulsed collector current, VGE=15V,  
tp limited by Tjmax  
ICM  
Tsc  
Ptot  
Ptot  
Short Circuit Withstand Time, VGE= 15V,  
VCE≤ 400V  
μs  
W
W
TO-220F Power dissipation , Tj=25℃  
27  
105  
TO-220,TO-263, Power dissipation , Tj=25℃  
Operating junction temperature  
Storage temperature  
Tj  
-40...+150  
-55...+150  
°C  
°C  
Ts  
Soldering temperature, wave soldering  
1.6mm (0.063in.) from case for 10s  
-
260  
°C  
Thermal Resistance  
TO-220,TO-263  
1.2  
TO-220F  
Parameter  
Symbol  
Unit  
4.9  
5.8  
IGBT thermal resistance, junction - case Rθ(j-c)  
Diode thermal resistance, junction - case Rθ(j-c)  
K/W  
2.38  
K/W  
K/W  
62.5  
Thermal resistance, junction - ambient  
Rθ(j-a)  
HMG15N65/D/F  
650V /15A Trench Field Stop IGBT  
Electrical Characteristics of the IGBT（Tj= 25℃unless otherwise specified）  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Units  
Static Characteristics (Tested on wafers)  
BVCES  
VCE(SAT)  
VGE(th)  
ICES  
Collector to Emitter Breakdown  
Voltage  
Collector to Emitter Saturation  
Voltage  
G-E Threshold Voltage  
V
GE = 0V, IC = 1mA  
650  
-
1.65  
5.0  
-
-
V
V
IC = 15A, VGE = 15V  
VGE = VCE, IC = 250μA  
VCE = 650V, VGE = 0V  
-
4.1  
-
1.95  
5.7  
V
Collector Cut-Off Current  
G-E Leakage Current  
25  
μA  
nA  
IGES  
-
-
VGE = ±20V, VCE = 0V  
±200  
VCE=20V, IC=15A  
gfs  
Transconductance  
-
10  
-
S
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
Dynamic  
Input capacitance  
Cies  
-
-
990  
56  
-
-
VCE = 25V, VGE = 0V,  
f = 1MHz  
Output capacitance  
Coes  
pF  
Reverse transfer  
capacitance  
Cres  
QG  
-
-
30  
92  
-
-
V
CC = 480V, IC = 15A,  
Gate charge  
nC  
A
VGE = 15V  
VGE=15V,tSC≤5us  
VCC=400V,  
Tj，start=25°C  
Short circuit collector  
current  
IC  
-
98  
-
（
）
SC  
HMG15N65/D/F  
650V /15A Trench Field Stop IGBT  
Switching Characteristic, Inductive Load（Tj= 25℃unless otherwise specified）  
Parameter  
Symbol  
Conditions  
Min.  
Typ.  
Max.  
Unit  
Dynamic  
Turn-on Delay Time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
15  
25  
-
-
-
-
-
-
ns  
ns  
ns  
Rise Time  
Tj=25C  
VCC = 400V,  
IC = 15A,  
VGE = 0/15V,  
Rg=12Ω  
Turn-off Delay Time  
Fall Time  
60  
46  
ns  
Turn-on Energy  
Turn-off Energy  
Eon  
Eoff  
0.75  
0.1  
mJ  
mJ  
Electrical Characteristics of the DIODE（Tj= 25℃unless otherwise specified）  
Parameter  
Dynamic  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
ns  
A
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Current  
Reverse Recovery Charge  
VFM  
Trr  
Irr  
IF = 15A  
-
-
-
-
1.7  
50  
4
-
-
-
-
IF= 15A  
VR = 300V,  
di/dt =200A/μs  
nC  
Qrr  
83  
HMG15N65/D/F  
650V /15A Trench Field Stop IGBT  
Fig. 1 FBSOA characteristics for TO-220F  
Fig. 2 FBSOA characteristics for TO-220 and TO-263  
100  
100  
tP = 10μs  
tP = 10μs  
10  
10  
50μs  
50μs  
100μs  
500μs  
1ms  
100μs  
500μs  
1ms  
DC  
DC  
1
1
Ta=25°C, Tj ≤150C , VGE=15V  
Ta=25°C, Tj ≤150C , VGE=15V  
0.1  
0.1  
1
10  
100  
VCE(V)  
1000  
1
10  
100  
VCE(V)  
1000  
Fig. 3 Load Current vs. Frequency for TO-220F  
Fig.4 Load Current vs. Frequency TO-220 and TO-263  
40  
60  
35  
50  
80℃  
80℃  
30  
25  
40  
20  
30  
100℃  
100℃  
15  
20  
rectangular current shape,  
D=0.5, VCE=400V,  
rectangular current shape,  
D=0.5, VCE=400V,  
10  
VGE=0/15V, Rg=12Ω，Tj ≤150C  
VGE=0/15V, Rg=12Ω，Tj ≤150C  
10  
0
5
0
1
10  
100  
1
10  
f (KHz)  
100  
f (KHz)  
HMG15N65/D/F  
650V /15A Trench Field Stop IGBT  
Fig. 5 Output characteristics  
Fig. 6 Saturation voltage characteristics  
50  
60  
25℃  
VGE = 20V  
150℃  
17V  
50  
40  
15V  
13V  
11V  
40  
30  
20  
30  
20  
10  
0
10  
VGE = 15V  
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
VCE(V)  
VCE(V)  
Fig. 7 Switching times vs. gate resistor  
Fig. 8 Switching times vs. collector current  
1000  
1000  
td(off)  
td(off)  
tf  
tf  
td(on)  
tr  
td(on)  
tr  
100  
100  
10  
10  
Common Emitter  
Common Emitter  
VCC = 400V, VGE = 15V, IC=15A  
Ta=25℃  
VCC = 400V, VGE = 15V, RG=12Ω  
Ta=25℃  
1
1
0
10 20 30 40 50 60 70 80 90  
Rg(Ω)  
0
10  
20  
30  
40  
50  
IC(A)  
HMG15N65/D/F  
650V /15A Trench Field Stop IGBT  
Fig. 9 Switching loss vs. gate resistor  
Fig. 10 Switching loss vs. collector current  
0.9  
3
Eoff  
Eon  
Eoff  
Eon  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
2.5  
2
1.5  
Common Emitter  
VCC = 400V, VGE = 15V, RG=12Ω  
Ta=25℃  
1
0.5  
Common Emitter  
VCC = 400V, VGE = 15V, IC=15A  
Ta=25℃  
0
0
10 20 30 40 50 60 70 80 90  
Rg (Ω)  
0
10  
20  
30  
40  
50  
Ic (A)  
Fig. 11 Gate charge characteristics  
Fig. 12 Capacitance characteristics  
10000  
15  
Ciss(pF)  
240V  
Coss(pF)  
Crss(pF)  
480V  
12  
1000  
100  
10  
9
6
3
Common Emitter  
IC= 15A ,Ta=25℃  
Common Emitter  
VGE = 0V, f = 1MHz  
Ta=25℃  
0
0
10  
20  
30  
0
20  
40  
60  
VCE(V)  
Qg (nC)  
HMG15N65/D/F  
650V /15A Trench Field Stop IGBT  
TO-220F package information  
HMG15N65/D/F  
650V /15A Trench Field Stop IGBT  
TO-263 package information  
HMG15N65/D/F  
650V /15A Trench Field Stop IGBT  
TO-220 package information  

相关型号：

HMG15N65F

 650V /15A Trench Field Stop IGBT
HMSEMI

HMG200A22MG200

 Fixed Resistor, Metal Glaze/thick Film, 2W, 22000000ohm, 2% +/-Tol, -200,200ppm/Cel
RFE

HMG200C100MJ350

 Fixed Resistor, Metal Glaze/thick Film, 2W, 100000000ohm, 5% +/-Tol, -350,350ppm/Cel
RFE

HMG200C13MG350

 Fixed Resistor, Metal Glaze/thick Film, 2W, 13000000ohm, 2% +/-Tol, -350,350ppm/Cel
RFE

HMG200C15MG200

 Fixed Resistor, Metal Glaze/thick Film, 2W, 15000000ohm, 2% +/-Tol, -200,200ppm/Cel
RFE

HMG200C16MG350

 Fixed Resistor, Metal Glaze/thick Film, 2W, 16000000ohm, 2% +/-Tol, -350,350ppm/Cel
RFE

HMG200C20MG350

 Fixed Resistor, Metal Glaze/thick Film, 2W, 20000000ohm, 2% +/-Tol, -350,350ppm/Cel
RFE

HMG200C20MJ350

 Fixed Resistor, Metal Glaze/thick Film, 2W, 20000000ohm, 5% +/-Tol, -350,350ppm/Cel
RFE

HMG200C22MJ200

 Fixed Resistor, Metal Glaze/thick Film, 2W, 22000000ohm, 5% +/-Tol, -200,200ppm/Cel
RFE

HMG200C24MJ200

 Fixed Resistor, Metal Glaze/thick Film, 2W, 24000000ohm, 5% +/-Tol, -200,200ppm/Cel
RFE

HMG200C24MJ350

 Fixed Resistor, Metal Glaze/thick Film, 2W, 24000000ohm, 5% +/-Tol, -350,350ppm/Cel
RFE

HMG200C27MJ350

 Fixed Resistor, Metal Glaze/thick Film, 2W, 27000000ohm, 5% +/-Tol, -350,350ppm/Cel
RFE
©2020 ICPDF网 联系我们和版权申明