HMS8N60D [HMSEMI]
N-Channel Super Junction Power MOSFET â ¡;
| 型号： | HMS8N60D |
| 厂家： | 
H&M Semiconductor |
| 描述： | N-Channel Super Junction Power MOSFET â ¡ |
| 文件： | 总9页 (文件大小：981K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMS8N60D, HMS8N60, HMS8N60F
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
VDS@Tjmax
RDS(ON) MAX
ID
650
540
8
V
m
Ω
A
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
Schematic diagram
● Uninterruptible Power Supply（UPS）
Package Marking And Ordering Information
Device
HMS8N60D
HMS8N60
HMS8N60F
Device Package
Marking
TO-263
HMS8N60D
HMS8N60
HMS8N60F
TO-220
TO-220F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25
℃
)
HMS8N60D
HMS8N60
Parameter
Symbol
HMS8N60F
Unit
600
V
V
Drain-Source Voltage (VGS=0V）
Gate-Source Voltage (VDS=0V)
V
DS
GS
±30
V
Continuous Drain Current at Tc=25°C
8
5.2
24
8*
A
ID (DC)
ID (DC)
IDM (pluse)
PD
Continuous Drain Current at Tc=100°C
5.2*
24*
A
(Note 1)
A
Pulsed drain current
80
31.7
0.25
W
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
0.64
W/°C
mJ
A
(Note 2)
185
4
EAS
Single pulse avalanche energy
Avalanche current(Note 1)
IAR
Repetitive Avalanche energy ，tAR limited by Tjmax
(Note 1)
0.4
EAR
mJ
v1.0
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HMS8N60D, HMS8N60, HMS8N60F
HMS8N60D
Parameter
Symbol
HMS8N60F
Unit
HMS8N60
50
15
Drain Source voltage slope, VDS ≤480 V,
Reverse diode dv/dt，VDS ≤480 V,ISD<ID
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
dv/dt
dv/dt
V/ns
V/ns
°C
-55...+150
TJ,TSTG
Table 2. Thermal Characteristic
Parameter
HMS8N60D
HMS8N60
1.56
Symbol
HMS8N60F
Unit
Thermal Resistance，Junction-to-Case（Maximum）
Thermal Resistance，Junction-to-Ambient （Maximum）
RthJC
RthJA
3.94
80
°C /W
°C /W
62
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max
Unit
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
VDS=600V,VGS=0V
VDS=600V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=4A
600
V
IDS
1
μ
A
A
A
S
Zero Gate Voltage Drain Current(Tc=25
℃
℃
)
IDS
100
±100
μ
S
Zero Gate Voltage Drain Current(Tc=125
)
Gate-Body Leakage Current
IGSS
n
Gate Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
VGS(th)
RDS(ON)
2.5
3
3.5
V
480
540
mΩ
gFS
Clss
Coss
Crss
Qg
VDS = 20V, ID = 4A
5.5
680
58
S
pF
pF
pF
nC
nC
nC
Ω
VDS=50V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
4
14.5
2.8
5.5
2
22
VDS=480V,ID=8A,
Gate-Source Charge
Qgs
Qgd
RG
V
GS=10V
Gate-Drain Charge
Intrinsic gate resistance
Switching times
f = 1 MHz open drain
Turn-on Delay Time
td(on)
tr
5.5
3.5
55
nS
nS
nS
nS
Turn-on Rise Time
VDD=380V,ID=4A,
RG=12Ω,VGS=10V
Turn-Off Delay Time
td(o
75
10
ff
)
Turn-Off Fall Time
tf
6.5
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
ISD
8
A
A
TC=25°C
Pulsed Source-drain current(Body Diode)
Forward On Voltage
ISDM
VSD
trr
23.4
1.2
Tj=25°C,ISD=8A,VGS=0V
0.9
220
2.2
20
V
Reverse Recovery Time
nS
uC
A
Tj=25°C,IF=8A,di/dt=100A/μs
Reverse Recovery Charge
Peak Reverse Recovery Current
Qrr
Irrm
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
v1.0
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HMS8N60D, HMS8N60, HMS8N60F
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Safe operating area for TO-220F
Figure3. Source-Drain Diode Forward Voltage
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
v1.0
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HMS8N60D, HMS8N60, HMS8N60F
Figure7. RDS(ON) vs Junction Temperature
Figure8. BVDSS vs Junction Temperature
Figure9. Maximum ID vs Junction Temperature
Figure10. Gate charge waveforms
Figure11. Capacitance
Figure12. Transient Thermal Impedance
v1.0
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N
HMS8N60D, HMS8N60, HMS8N60F
Figure13. Transient Thermal Impedance for TO-220F
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v1.0
HMS8N60D, HMS8N60, HMS8N60F
Test circuit
1）Gate charge test circuit & Waveform
2）Switch Time Test Circuit：
3）Unclamped Inductive Switching Test Circuit & Waveforms
v1.0
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HMS8N60D, HMS8N60, HMS8N60F
TO-263-2L Package Information
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Symbol
Max.
4.670
0.150
1.370
0.910
1.370
0.530
1.370
10.310
8.900
Max.
0.184
0.006
0.054
0.036
0.054
0.021
0.054
0.406
0.350
A
A1
B
4.470
0.000
1.170
0.710
1.170
0.310
1.170
10.010
8.500
0.176
0.000
0.046
0.028
0.046
0.012
0.046
0.394
0.335
b
b1
c
c1
D
E
e
2.540 TYP.
0.100 TYP.
e1
L
4.980
15.050
5.080
2.340
1.300
5.180
15.450
5.480
2.740
1.700
0.196
0.593
0.200
0.092
0.051
0.204
0.608
0.216
0.108
0.067
L1
L2
L3
V
5.600 REF
0.220 REF
v1.0
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HMS8N60D, HMS8N60, HMS8N60F
TO-220-3L-C Package Information
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Symbol
Max.
4.600
2.550
0.910
1.370
0.650
1.400
10.250
9.750
12.950
Max.
0.181
0.100
0.036
0.054
0.026
0.055
0.404
0.384
0.510
A
A1
b
4.400
2.250
0.710
1.170
0.330
1.200
9.910
8.9500
12.650
0.173
0.089
0.028
0.046
0.013
0.047
0.390
0.352
0.498
b1
c
c1
D
E
E1
e
2.540 TYP.
0.100 TYP.
e1
F
4.980
2.650
7.900
0.000
12.900
2.850
5.180
2.950
8.100
0.300
13.400
3.250
0.196
0.104
0.311
0.000
0.508
0.112
0.204
0.116
0.319
0.012
0.528
0.128
H
h
L
L1
V
7.500 REF
.
0.295 REF.
Φ
3.400
3.800
0.134
0.150
v1.0
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HMS8N60D, HMS8N60, HMS8N60F
TO-220F Package Information
9
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v1.0
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