HMS8N70F [HMSEMI]

N-Channel Super Junction Power MOSFET â¡;


型号：	HMS8N70F
厂家：	H&M Semiconductor
描述：	N-Channel Super Junction Power MOSFET â¡
文件：	总10页 (文件大小：971K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HMS8N70D,HMS8N70,HMS8N70F

N-Channel Super Junction Power MOSFET Ⅱ

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS

700

540

mΩ

R_{DS(ON) TYP.}

I_D

Features

●New technology for high voltage device

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

HMS8N70D

HMS8N70

HMS8N70F

TO-263

HMS8N70D

HMS8N70

HMS8N70F

TO-220

TO-220F

TO-263

TO-220

T O-220F

Table 1. Absolute Maximum Ratings (T_C=25℃)

HMS8N70D

HMS8N70

Parameter

Symbol

HMS8N70F

Unit

700

Drain-Source Voltage (VGS=0V）

Gate-Source Voltage (VDS=0V)

V^DS

VGS

±30

Continuous Drain Current at Tc=25°C

5.2

I_{D (DC)}

I_{DM (pluse)}

P_D

Continuous Drain Current at Tc=100°C

5.2*

24*

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25℃)

31.7

0.25

Derate above 25°C

0.64

W/°C

(Note 2)

185

EAS

Single pulse avalanche energy

Avalanche current^{(Note 1)}

I_AR

Repetitive Avalanche energy ，t_ARlimited by T_jmax

(Note 1)

0.4

E_AR

Page 1

HMS8N70D,HMS8N70,HMS8N70F

HMS8N70D

Parameter

Symbol

HMS8N70F

Unit

HMS8N70

Drain Source voltage slope, V_DS≤480 V,

Reverse diode dv/dt，V_DS≤480 V,I_SD<I_D

Operating Junction and Storage Temperature Range

* limited by maximum junction temperature

dv/dt

V/ns

°C

-55...+150

T_J,T_STG

Table 2. Thermal Characteristic

Parameter

HMS8N70D

Symbol

HMS8N70F

Unit

HMS8N70

Thermal Resistance，Junction-to-Case（Maximum）

Thermal Resistance，Junction-to-Ambient （Maximum）

R_thJC

R_thJA

1.56

3.94

°C /W

Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

On/off states

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current(Tc=25℃)

Zero Gate Voltage Drain Current(Tc=125℃)

Gate-Body Leakage Current

Gate Threshold Voltage

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=700V,V_GS=0V

V_GS=±30V,V_DS=0V

V_DS=V_GS,I_D=250μA

V_GS=10V, I_D=4A

700

μA

I_DSS

100

±100

I_GSS

V_GS(th)

R_DS(ON)

2.5

3.5

Drain-Source On-State Resistance

Dynamic Characteristics

Forward Transconductance

Input Capacitance

540

600

mΩ

g_FS

C_lss

C_oss

C_rss

Q_g

V_DS= 20V, I_D= 4A

5.5

680

Ω

V_DS=50V,V_GS=0V,

Output Capacitance

F=1.0MHz

Reverse Transfer Capacitance

Total Gate Charge

14.5

2.8

5.5

V_DS=480V,I_D=8A,

Gate-Source Charge

Q_gs

Q_gd

R_G

_GS=10V

Gate-Drain Charge

Intrinsic gate resistance

f = 1 MHz open drain

Switching times

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

5.5

3.5

Turn-on Rise Time

V_DD=380V,I_D=4A,

R_G=12Ω,V_GS=10V

Turn-Off Delay Time

Turn-Off Fall Time

6.5

Source- Drain Diode Characteristics

Source-drain current(Body Diode)

Pulsed Source-drain current(Body Diode)

Forward On Voltage

I_SD

I_SDM

V_SD

t_rr

T_C=25°C

23.4

1.2

Tj=25°C,I_SD=8A,V_GS=0V

0.9

220

2.2

Reverse Recovery Time

Tj=25°C,I_F=8A,di/dt=100A/μs

Reverse Recovery Charge

Peak Reverse Recovery Current

Q_rr

I_rrm

Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2. Tj=25℃,VDD=50V,VG=10V, R_G=25Ω

Page 2

HMS8N70D,HMS8N70,HMS8N70F

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)

Figure1. Safe operating area

Figure2. Safe operating area for TO-220F

Figure3. Source-Drain Diode Forward Voltage

Figure4. Output characteristics

Figure5. Transfer characteristics

Figure6. Static drain-source on resistance

Page 3

HMS8N70D,HMS8N70,HMS8N70F

Figure7. R_DS(ON)vs Junction Temperature

Figure8. BV_DSSvs Junction Temperature

Figure9. Maximum I_Dvs Junction Temperature

Figure10. Gate charge waveforms

Figure11. Capacitance

Figure12. Transient Thermal Impedance

Page 4

HMS8N70D,HMS8N70,HMS8N70F

Figure13. Transient Thermal Impedance for TO-220F

Page 5

HMS8N70D,HMS8N70,HMS8N70F

Test circuit

1）Gate charge test circuit & Waveform

2）Switch Time Test Circuit：

3）Unclamped Inductive Switching Test Circuit & Waveforms

Page 6

HMS8N70D,HMS8N70,HMS8N70F

TO-263-2L Package Information

Dimensions In Millimeters

Min.

Dimensions In Inches

Min.

Symbol

Max.

4.670

0.150

1.370

0.910

1.370

0.530

1.370

10.310

8.900

Max.

0.184

0.006

0.054

0.036

0.054

0.021

0.054

0.406

0.350

4.470

0.000

1.170

0.710

1.170

0.310

1.170

10.010

8.500

0.176

0.000

0.046

0.028

0.046

0.012

0.046

0.394

0.335

2.540 TYP.

0.100 TYP.

4.980

15.050

5.080

2.340

1.300

5.180

15.450

5.480

2.740

1.700

0.196

0.593

0.200

0.092

0.051

0.204

0.608

0.216

0.108

0.067

5.600 REF

0.220 REF

Page 7

HMS8N70D,HMS8N70,HMS8N70F

TO-220-3L-C Package Information

Dimensions In Millimeters

Min.

Dimensions In Inches

Min.

Symbol

Max.

4.600

2.550

0.910

1.370

0.650

1.400

10.250

9.750

12.950

Max.

0.181

0.100

0.036

0.054

0.026

0.055

0.404

0.384

0.510

4.400

2.250

0.710

1.170

0.330

1.200

9.910

8.9500

12.650

0.173

0.089

0.028

0.046

0.013

0.047

0.390

0.352

0.498

2.540 TYP.

0.100 TYP.

4.980

2.650

7.900

0.000

12.900

2.850

5.180

2.950

8.100

0.300

13.400

3.250

0.196

0.104

0.311

0.000

0.508

0.112

0.204

0.116

0.319

0.012

0.528

0.128

7.500 REF.

0.295 REF.

3.400

3.800

0.134

0.150

Page 8

HMS8N70D,HMS8N70,HMS8N70F

TO-220F Package Information

Page 9

HMS8N70D,HMS8N70,HMS8N70F

ATTENTION:

■

Any and all H&M SEMI products described or contained herein do not have specifications that can handle applications that

require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications

whose failure can be reasonably expected to result in serious physical and/or material damage. Consult

with your H&M SEMI representative nearest you before using any H&M SEMI products described or contained herein in

such applications.

■

H&M SEMI assumes no responsibility for equipment failures that result from using products at values

that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)

listed in products specifications of any and all H&M SEMI products described or contained herein.

Specifications of any and all H&M SEMI products described or contained herein stipulate the performance, characteristics,

and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,

and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states

that cannot be evaluated in an independent device, the customer should always evaluate and test

devices mounted in the customer’s products or equipment.

■

H&M Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could

cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or

events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe

design, redundant design, and structural design.

■

In the event that any or all H&M SEMI products(including technical data, services) described or contained herein are

controlled under any of applicable local export control laws and regulations, such products must not be exported without

obtaining the export license from the authorities concerned in accordance with the above law.

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photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission

of H&M Semiconductor CO.,LTD.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume

production. H&M SEMI believes information herein is accurate and reliable, but no guarantees are made or implied

regarding its use or any infringements of intellectual property rights or other rights of third parties.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the H&M SEMI

product that you intend to use.

This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.

Page 10

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