L6713A [HOLTEK]
2/3 Phase controller with embedded drivers for Intel VR10, VR11 and AMD 6 bit CPUs; 与英特尔VR10 , VR11和AMD的6位CPU的嵌入式驱动2/3相位控制器型号: | L6713A |
厂家: | HOLTEK SEMICONDUCTOR INC |
描述: | 2/3 Phase controller with embedded drivers for Intel VR10, VR11 and AMD 6 bit CPUs |
文件: | 总64页 (文件大小:628K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
L6713A
2/3 Phase controller with embedded drivers for Intel VR10, VR11
and AMD 6 bit CPUs
General features
■ Load transient boost (LTB) technology™ to
minimize the number of output capacitors
(patent pending)
■ Dual-edge asynchronous PWM
TQFP64 (Exposed Pad)
■ Selectable 2 or 3 phase operation
■ 0.5% Output voltage accuracy
■ 7/8 bit programmable output up to 1.60000V -
Description
Intel VR10.x, VR11 DAC
L6713A implements a two/three phase step-down
controller with 180º/120º phase-shift between
each phase with integrated high current drivers in
a compact 10x10mm body package with exposed
pad.The 2 or 3 phase operation can be easily
selected through PHASE_SEL pin.
■ 6 bit programmable output up to 1.5500V -
AMD 6 bit DAC
■ High current Integrated gate drivers
■ Full differential current sensing across inductor
■ Embedded VRD thermal monitor
■ Differential remote voltage sensing
■ Dynamic VID management
Load Transient Boost (LTB) Technology™ (Patent
Pending) reduces system cost by providing the
fastest response to load transition therefore
requiring less bulk and ceramic output capacitors
to satisfy load transient requirements.
■ Adjustable voltage offset
■ Low-side-less startup
■ Programmable soft start
LTB Technology™ can be disabled and in this
condition the device works as a dual-edge
asynchronous PWM.
■ Programmable over voltage protection
■ Preliminary over voltage protection
■ Programmable over current protection
■ Adjustable switching frequency
■ Output enable
The device embeds selectable DACs: the output
voltage ranges up to 1.60000V (both Intel VR10.x
and VR11 DAC) or up to 1.5500V (AMD 6BIT
DAC) managing D-VID with 0.5% output voltage
accuracy over line and temperature variations.
■ SS_END / PGOOD signal
The controller assures fast protection against load
over current and under / over voltage (in this last
case also before UVLO). In case of over-current
the device turns off all MOSFET and latches the
condition.
■ TQFP64 10x10mm package with exposed pad
Applications
■ High current VRD for desktop CPUs
■ Workstation and server CPU power supply
■ VRM modules
System Thermal Monitor is also provided allowing
system protection from over-temperature
conditions.
Order codes
Part number
Package
TQFP64 (Exposed Pad)
Packaging
L6713A
Tube
L6713ATR
TQFP64 (Exposed Pad)
Rev 2
Tape and reel
November 2006
1/64
www.st.com
64
Contents
L6713A
Contents
1
2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1
2.2
Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.1
3.2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4
5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
VID Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.1
5.2
5.3
5.4
5.5
Mapping for the Intel VR11 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Voltage identification (VID) for Intel VR11 Mode . . . . . . . . . . . . . . . . . . . 16
Voltage identifications (VID) for Intel VR10 Mode + 6.25mV . . . . . . . . . . 18
Mapping for the AMD 6BIT Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Voltage identifications (VID) codes for AMD 6BIT Mode . . . . . . . . . . . . . 20
6
7
8
Reference Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Device description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Configuring the device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
8.1
8.2
Number of phases selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
DAC Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
9
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Current reading and current sharing loop . . . . . . . . . . . . . . . . . . . . . . 32
Differential remote voltage sensing . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
10
11
2/64
L6713A
Contents
12
Voltage positioning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
12.1 Offset (Optional) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
12.2 Droop function (Optional) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
TM
13
Load Transient Boost Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
13.1 LTB Gain mofidication (Optional) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Dynamic VID transitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Enable and disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Soft start . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
14
15
16
16.1 Intel mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
16.1.1 SS/LTB/AMD connections when using LTB Gain = 2 . . . . . . . . . . . . . . . 43
16.1.2 SS/LTB/AMD connections when using LTB Gain < 2 . . . . . . . . . . . . . . . 44
16.2 AMD mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
16.3 Low-side-less startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
17
Output voltage monitor and protections . . . . . . . . . . . . . . . . . . . . . . . . 47
17.1 Under voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
17.2 Preliminary over voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
17.3 Over voltage and programmable OVP . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
17.4 PGOOD (only for AMD mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
18
19
20
21
22
Over current protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Driver section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
System control loop compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Thermal monitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
3/64
Contents
L6713A
23
Tolerance band (TOB) definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
23.1 Controller tolerance (TOBController) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
23.2 Ext. current sense circuit tolerance (TOBCurrSense) . . . . . . . . . . . . . . . . . 56
23.3 Time constant matching error tolerance (TOBTCMatching) . . . . . . . . . . . . . 56
23.4 Temperature measurement error (VTC) . . . . . . . . . . . . . . . . . . . . . . . . . . 57
24
Layout guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
24.1 Power components and connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
24.2 Small signal components and connections . . . . . . . . . . . . . . . . . . . . . . . 59
25
26
27
Embedding L6713A - based VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
4/64
L6713A
Block diagram
1
Block diagram
Figure 1. Block diagram
VR_HOT
VR_FAN
SS_END / PGOOD
HS1
LS1
HS2
LTB
LS2
HS3
LTB
LS3
LOGIC PWM
ADAPTIVE ANTI
CROSS CONDUCTION
LOGIC PWM
ADAPTIVE ANTI
CROSS CONDUCTION
LOGIC PWM
ADAPTIVE ANTI
CROSS CONDUCTION
CURRENT SHARING
CORRECTION
CURRENT SHARING
CORRECTION
CURRENT SHARING
CORRECTION
OSC / FAULT
LTB
TM
PWM1
PWM2
PWM3
SS/ LTBG/ AMD
PWM1
PWM3
PWM2
CS1-
CH1 CURRENT
DIGITAL
SOFT START
CS1+
READING
VCC
VCCDR
L6713A
OCP
OUTEN
CONTROL LOGIC
AND PROTECTIONS
CS2-
CH2 CURRENT
READING
SSOSC/AMD
CS2+
VID0
VID1
VID2
CS3-
CH3 CURRENT
READING
VID3
CS3+
TOTAL DELIVERED CURRENT
+175mV / 1.800V / OVP
VID4
VID5
VCC
OVP
COMPARATOR
VID6
VCC
VID7 / D-VID
SGND
TO OCP
+.1240V
OCP
VID_SEL
VREF
GND DROP
RECOVERY
OUTEN
COMPARATOR
ERROR
LTB
PHASE_SEL
OVP
AMPLIFIER
5/64
Pin settings
L6713A
2
Pin settings
2.1
Pin connection
Figure 2. Pin connection (top view)
48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33
TM
SGND
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
SS / LTBG / AMD
CS1-
N.C.
CS1+
N.C.
CS3-
N.C.
CS3+
PGND2
LGATE2
VCCDR2
VCCDR3
LGATE3
PGND3
PGND1
LGATE1
VCCDR1
PHASE1
N.C.
CS2-
CS2+
N.C.
L6713A
N.C.
COMP
FB
DROOP
VSEN
SGND
LTB
OUTEN
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
6/64
L6713A
Pin settings
2.2
Pin description
Table 1. Pin description
N°
Pin
Function
Channel 1 HS driver output.
A small series resistors helps in reducing device-dissipated power.
1
UGATE1
Channel 1 HS driver supply.
Connect through a capacitor (100nF typ.) to PHASE1 and provide necessary
Bootstrap diode.A small resistor in series to the boot diode helps in reducing
Boot capacitor overcharge.
2
BOOT1
N.C.
3
4
Not internally connected.
Channel 3 HS driver return path.
PHASE3 It must be connected to the HS3 MOSFET source and provides return path for
the HS driver of channel 3.
Channel 3 HS driver output.
UGATE3
5
6
A small series resistors helps in reducing device-dissipated power.
Channel 3 HS driver supply.
Connect through a capacitor (100nF typ.) to PHASE3 and provide necessary
Bootstrap diode.A small resistor in series to the boot diode helps in reducing
BOOT3
Boot capacitor overcharge.
7
8
N.C.
Not internally connected.
Channel 2 HS driver return path.
PHASE2 It must be connected to the HS2 MOSFET source and provides return path for
the HS driver of channel 2.Leave floating when using 2 Phase operation.
Channel 2 HS driver output.
9
UGATE2 A small series resistors helps in reducing device-dissipated power.
Leave floating when using 2 Phase operation.
Channel 2 HS driver supply.
Connect through a capacitor (100nF typ.) to PHASE2 and provide necessary
Bootstrap diode.A small resistor in series to the boot diode helps in reducing
10
BOOT2
Boot capacitor overcharge.Leave floating when using 2 Phase operation.
11
12
13
14
N.C.
N.C.
N.C.
N.C.
Not internally connected.
Not internally connected.
Not internally connected.
Not internally connected.
Device Supply Voltage. The operative voltage is 12V 15%. Filter with 1µF (typ)
MLCC vs. SGND.
15
16
VCC
PHASE SELection Pin.Internally pulled up by 12.5µA(typ) to 5V.
It allows selecting between 2 Phase and 3 Phase operation.See Table 10 for
details.
PHASE_
SEL
OUTput ENable Pin.Internally pulled up by 12.5µA(typ) to 5V.
Forced low, the device stops operations with all MOSFETs OFF: all the
protections are disabled except for Preliminary over voltage.
Leave floating, the device starts-up implementing soft-start up to the selected
VID code.
17
OUTEN
Cycle this pin to recover latch from protections; filter with 1nF (typ) vs. SGND.
7/64
Pin settings
L6713A
Table 1. Pin description
N°
Pin
Function
Load Transient Boost Pin.
Internally fixed at 1V, connecting a RLTB - CLTB vs. VOUT allows to enable the
18
LTB
Load Transient Boost Technology™: as soon as the device detects a transient
load it turns on all the PHASEs at the same time. Short to SGND to disable the
function.
All the internal references are referred to this pin. Connect to the PCB Signal
Ground.
19
20
SGND
VSEN
It manages OVP and UVP protections and PGOOD (when applicable).
See “Output voltage monitor and protections” Section.
100µA constant current (IOFFSET, See Table 4) is sunk by VSEN pin in order to
generate a positive offset in according to the ROFFSET resistor between VSEN
pin and VOUT. See “Offset (Optional)” Section for details.
A current proportional to the total current read is sourced from this pin
according to the Current Reading Gain.
21
DROOP
Short to FB to implement Droop Function or Short to SGND to disable the
function.Connecting to SGND through a resistor and filtering with a capacitor,
the current info can be used for other purposes.
Error Amplifier Inverting Input. Connect with a resistor RFB vs. VSEN and with
an RF - CF vs. COMP.
22
23
FB
Error Amplifier Output. Connect with an RF - CF vs. FB.
The device cannot be disabled by pulling down this pin.
COMP
24
25
N.C.
N.C.
Not internally connected.
Not internally connected.
Channel 2 Current Sense Positive Input.
Connect through an R-C filter to the phase-side of the channel 2 inductor.
Short to SGND or to VOUT when using 2 Phase operation.
See “Layout guidelines” Section for proper layout of this connection.
26
27
CS2+
CS2-
Channel 2 Current Sense Negative Input.
Connect through a Rg resistor to the output-side of the channel 2 inductor.
Leave floating when using 2 Phase operation.
See “Layout guidelines” Section for proper layout of this connection.
Channel 3 Current Sense Positive Input.
28
29
30
31
CS3+
CS3-
CS1+
CS1-
Connect through an R-C filter to the phase-side of the channel 3 inductor.
See “Layout guidelines” Section for proper layout of this connection.
Channel 3 Current Sense Negative Input.
Connect through a Rg resistor to the output-side of the channel 3 inductor.
See “Layout guidelines” Section for proper layout of this connection.
Channel 1 Current Sense Positive Input.
Connect through an R-C filter to the phase-side of the channel 1 inductor.
See “Layout guidelines” Section for proper layout of this connection.
Channel 1 Current Sense Negative Input.
Connect through a Rg resistor to the output-side of the channel 1 inductor.
See “Layout guidelines” Section for proper layout of this connection.
8/64
L6713A
Pin settings
Table 1. Pin description
N°
Pin
Function
Soft Start OSCillator, LTB Gain and AMD selection Pin.
It allows selecting between INTEL DACs and AMD DAC.
SS/ LTBG/ Short to SGND to select AMD DAC otherwise INTEL mode is selected.
32
AMD
When INTEL mode is selected trough this pin it is possible to select the Soft
Start Time and also the Gain of LTB Technology™. See “Soft start” Section”
and See “Load Transient Boost TechnologyTM” Section for details.
Over Voltage Programming Pin. Internally pulled up by 12.5µA(typ) to 5V.
Leave floating to use built-in protection thresholds as reported into Table 11.
Connect to SGND through a ROVP resistor and filter with 100pF (max) to set the
OVP threshold to a fixed voltage according to the ROVP resistor.
See “Over voltage and programmable OVP” Section Section for details.
33
34
OVP
Intel Mode.Internally pulled up by 12.5µA(typ) to 5V.
It allows selecting between VR10 (short to SGND, Table 7) or VR11 (floating,
See Table 6) DACs. See “Configuring the device” Section for details.
AMD Mode. Not Applicable. Needs to be shorted to SGND.
VID_SEL
Over Current SET Pin.
Connect to SGND through a ROCSET resistor to set the OCP threshold.Connect
also a COCSET capacitor to set a delay for the OCP intervention.
See “Over current protection” Section for details.
35
36
OCSET
FBG
Connect to the negative side of the load to perform remote sense.
See “Layout guidelines” Section for proper layout of this connection.
Oscillator Pin.
It allows programming the switching frequency FSW of each channel: the
equivalent switching frequency at the load side results in being multiplied by the
phase number N.
OSC/
FAULT
37
Frequency is programmed according to the resistor connected from the pin vs.
SGND or VCC with a gain of 6kHz/µA (see relevant section for details). Leaving
the pin floating programs a switching frequency of 200kHz per phase.
The pin is forced high (5V) to signal an OVP FAULT: to recover from this
condition, cycle VCC or the OUTEN pin. See “Oscillator” Section for details.
VID7 - Intel Mode. See VID5 to VID0 Section.
DVID - AMD Mode. DVID Output.
38
39
VID7/DVID CMOS output pulled high when the controller is performing a D-VID transition
(with 32 clock cycle delay after the transition has finished). See “Dynamic VID
transitions” Section Section for details.
Intel Mode. See VID5 to VID0 Section.
VID6
AMD Mode. Not Applicable. Needs to be shorted to SGND.
9/64
Pin settings
L6713A
Table 1. Pin description
N°
Pin
Function
Intel Mode. Voltage IDentification Pins (also applies to VID6, VID7).
Internally pulled up by 25µA to 5V, connect to SGND to program a '0' or leave
floating to program a '1'.
They allow programming output voltage as specified in Table 6 and Table 7
according to VID_SEL status. OVP and UVP protection comes as a
consequence of the programmed code (See Table 11).
AMD Mode. Voltage IDentification Pins.
40 to
45
VID5 to
VID0
Internally pulled down by 12.5µA, leave floating to program a '0' while pull up to
more than 1.4V to program a '1'.
They allow programming the output voltage as specified in Table 9 (VID7
doesn’t care). OVP and UVP protection comes as a consequence of the
programmed code (See Table 11).
Note. VID6 not used, need to be shorted to SGND.
SSEND - Intel Mode. Soft Start END Signal.
Open Drain Output sets free after SS has finished and pulled low when
triggering any protection. Pull up to a voltage lower than 5V (typ), if not used it
SS_END/ can be left floating.
46
PGOOD
PGOOD - AMD Mode.
Open Drain Output set free after SS has finished and pulled low when VSEN is
lower than the relative threshold. Pull up to a voltage lower than 5V (typ), if not
used it can be left floating.
Voltage Regulator HOT. Over Temperature Alarm Signal.
Open Drain Output, set free when TM overcomes the Alarm Threshold.
Thermal Monitoring Output enabled if Vcc > UVLOVCC.
47
48
VR_HOT
VR_FAN
See “Thermal monitor” Section for details and typical connections.
Voltage Regulator FAN. Over Temperature Warning Signal.
Open Drain Output, set free when TM overcomes the Warning Threshold.
Thermal Monitoring Output enabled if Vcc > UVLOVCC.
See “Thermal monitor” Section for details and typical connections.
Thermal Monitor Input.
It senses the regulator temperature through apposite network and drives
VR_FAN and VR_HOT accordingly.Short TM pin to SGND if not used.
See “Thermal monitor” Section for details and typical connections.
49
50
TM
All the internal references are referred to this pin. Connect to the PCB Signal
Ground.
SGND
51
52
53
N.C.
N.C.
N.C.
Not internally connected.
Not internally connected.
Not internally connected.
Channel 2 LS Driver return path. Connect to Power ground Plane.
It must be connected to Power ground Plane also when using 2-Phase
Operation.
54
55
PGND2
LGATE2
Channel 2 LS Driver Output.A small series resistor helps in reducing device-
dissipated power.
Leave floating when using 2 Phase operation.
10/64
L6713A
Pin settings
Table 1. Pin description
N°
Pin
Function
Channel 2 LS Driver Supply.
It must be connected to others VCCDRx pins also when using 2-Phase
VCCDR2 Operation.
LS Driver supply can range from 5Vbus up to 12Vbus, filter with 1µF MLCC cap
56
vs. PGND2.
Channel 3 LS Driver Supply.
It must be connected to others VCCDRx pins.
LS Driver supply can range from 5Vbus up to 12Vbus, filter with 1µF MLCC cap
vs. PGND3.
57
58
VCCDR3
LGATE3
Channel 3 LS Driver Output.A small series resistor helps in reducing device-
dissipated power.
59
60
PGND3
PGND1
Channel 3 LS Driver return path. Connect to Power ground Plane.
Channel 1 LS Driver return path. Connect to Power ground Plane.
Channel 1 LS Driver Output.A small series resistor helps in reducing device-
dissipated power.
61
LGATE1
Channel 1 LS Driver Supply.
It must be connected to others VCCDRx pins.
LS Driver supply can range from 5Vbus up to 12Vbus, filter with 1µF MLCC cap
vs. PGND1.
62
VCCDR1
Channel 1 HS driver return path.
63
64
PHASE1 It must be connected to the HS1 MOSFET source and provides return path for
the HS driver of channel 1.
N.C.
Not internally connected.
Thermal pad connects the Silicon substrate and makes good thermal contact
with the PCB to dissipate the power necessary to drive the external MOSFETs.
Connect to the PGND plane with several VIAs to improve thermal conductivity.
THERMAL
PAD
PAD
11/64
Electrical data
L6713A
3
Electrical data
3.1
Maximum ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
VCC, VCCDRx
to PGNDx
15
V
BOOTx - VPHASEx Boot voltage
VUGATEx - VPHASEx
VCC - VBOOTx
15
15
V
V
7.5
V
LGATEx, PHASEx, to PGNDx
VID0 to VID7, VID_SEL
All other Pins to PGNDx
-0.3 to VCC + 0.3
-0.3 to 5
-0.3 to 7
V
V
V
Static condition to PGNDx,
VCC = 14V, BOOTx = 7V,
PHASEx = -7.5V
-7.5
26
V
V
VPHASEx
Positive peak voltage to PGNDx;
T < 20ns @ 600kHz
3.2
Thermal data
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Thermal resistance junction to ambient
(Device soldered on 2s2p PC Board)
RthJA
40
°C/W
TMAX
TSTG
TJ
Maximum junction temperature
Storage temperature range
150
-40 to 150
0 to 125
2.5
°C
°C
°C
W
Junction temperature range
Maximum power dissipation at TA = 25°C
PTOT
12/64
L6713A
Electrical characteristics
4
Electrical characteristics
V
= 12V 15%, T = 0°C to 70°C, unless otherwise specified
J
CC
Table 4. Electrical characteristics
Symbol
Parameter
Test condition
Min.
Typ. Max.
Unit
Supply current
HGATEx and LGATEx = OPEN
VCCDRx = BOOTx = 12V
ICC
VCC supply current
17
1
mA
mA
mA
ICCDRx
IBOOTx
VCCDRx supply current
BOOTx supply current
LGATEx = OPEN; VCCDRx = 12V
HGATEx = OPEN; PHASEx to
PGNDx VCC = BOOTx = 12V
0.75
Power-ON
VCC Turn-ON
VCC Rising; VCCDRx = 5V
VCC Falling; VCCDRx = 5V
VCCDRx Rising; VCC = 12V
VCCDRx Falling; VCC = 12V
VCC Rising; VCCDRx = 5V
VCC Falling; VCCDRx = 5V
8.9
7.7
4.5
4.3
3.6
3.3
9.3
4.8
V
V
V
V
V
V
UVLOVCC
VCC Turn-OFF
7.3
4
VCCDR Turn-ON
VCCDR Turn-OFF
Pre-OVP Turn-ON
Pre-OVP Turn-OFF
UVLOVCCDR
UVLOOVP
3.85
3.05
Oscillator and inhibit
180
175
200
500
220
225
OSC = OPEN
OSC = OPEN; TJ = 0°C to 125°C
FOSC
Main oscillator accuracy
kHz
T1
T2
T3
SS delay time
SS Time T2
Intel mode
1
ms
Intel mode; RSSOSC = 25kΩ
µs
SS Time T3
Intel mode
50
µs
V
Rising thresholds voltage
Hysteresis
0.80
0.85
100
0.90
0.80
Output enable intel mode
mV
V
OUTEN
Input low
Output enable AMD mode
Input high
1.40
V
OUTEN Pull-up current
PWMx Ramp amplitude
Voltage at Pin OSC
OUTEN to SGND
12.5
3
µA
V
∆VOSC
FAULT
OVP Active
5
V
13/64
Electrical characteristics
L6713A
Unit
Table 4. Electrical characteristics
Symbol
Parameter
Test condition
Min.
Typ. Max.
Reference and DAC
Intel mode
VID=1.000V to VID=1.600V
FB = VOUT; FBG = GNDOUT
-0.5
-0.6
-
-
0.5
0.6
%
%
kVID
Output voltage accuracy
AMD mode
VID=1.000V to VID=1.550V
FB = VOUT; FBG = GNDOUT
VBOOT
IVID
Boot voltage
Intel mode
1.081
25
V
VID Pull-up current
VID Pull-down current
Intel mode; VIDx to SGND
AMD mode; VIDx to 5.4V
µA
µA
12.5
0.3
0.8
Intel mode; Input low
AMD mode; Input low
VIDIL
VIDIH
V
V
VID Thresholds
0.8
Intel mode; Input high
AMD mode; Input high
1.35
0.3
VID_SEL Threshold
(Intel Mode)
Input low
Input high
V
0.8
VID_SEL
VID_SEL Pull-up current
VIDSEL to SGND
12.5
µA
Error amplifier
A0
EA DC gain
EA Slew rate
80
20
dB
SR
COMP = 10pF to SGND
V/µs
Differential current sensing and offset
ICSx+
Bias current
Inductor sense
0
-
µA
%
V
I
– I
INFOx AVG
-----------------------------------------
Rg = 1kΩ; IINFOx =25µA
Current sense mismatch
Over current threshold
-3
3
I
AVG
VOCSET(OCP)
VOCTH
1.230 1.240 1.250
Rg = 1kΩ
2-PHASE, IOCSET = 80µA;
KIOCSET
OCSET current accuracy
-15
-
15
%
3-PHASE, IOCSET = 120µA;
Rg = 1kΩ
Droop current deviation from
nominal value
2-PHASE, IDROOP = 0 to 40µA;
kIDROOP
-1
-
1
µA
µA
3-PHASE, IDROOP = 0 to 60µA;
IOFFSET
Offset current
VSEN = 0.500V to 1.600V
90
100
110
Gate driver
BOOTx - PHASEx = 10V;
CUGATEx to PHASEx = 3.3nF
tRISE_UGATEx HS Rise time
15
30
ns
IUGATEx
HS Source current
HS Sink resistance
BOOTx - PHASEx = 10V
BOOTx - PHASEx = 12V
2
2
A
RUGATEx
1.5
2.5
Ω
14/64
L6713A
Electrical characteristics
Table 4. Electrical characteristics
Symbol
Parameter
Test condition
VCCDRx = 10V;
Min.
Typ. Max.
Unit
tRISE_LGATEx LS Rise time
30
55
ns
CLGATEx to PGNDx = 5.6nF
ILGATEx
LS Source current
VCCDRx = 10V
VCCDRx = 12V
1.8
1.1
A
RLGATEx
LS Sink resistance
0.7
1.5
Ω
Protections
Intel mode; Before VBOOT
1.300
200
V
mV
V
Over voltage protection
(VSEN rising)
OVP
Intel mode; Above VID
AMD mode
150
175
1.750 1.800 1.850
I
OVP current
OVP = SGND
OVP = 1.8V
11.5
-20
12.5
0
13.5
20
µA
mV
Program-
mable OVP
Comparator offset voltage
UVLOOVP < VCC < UVLOVCC
VCC> UVLOVCC & OUTEN = SGND
1.800
V
Preliminary over voltage
protection
Pre-OVP
Hysteresis
350
-750
-300
mV
mV
UVP
Under voltage protection
PGOOD Threshold
VSEN Falling; Below VID
AMD Mode;
VSEN Falling; Below VID
PGOOD
mV
V
VSSEND/
SSEND / PGOOD
voltage low
I = -4mA
0.4
PGOOD
Thermal monitor
TM Warning (VR_FAN)
VTM Rising
3.2
3.6
V
V
VTM
VTM Rising
TM Alarm (VR_HOT)
TM Hysteresis
100
mV
0.4
0.4
V
V
VVR_HOT
VVR_FAN
;
VR_HOT Voltage low;
VR_FAN Voltage low
I = -4mA
15/64
VID Tables
L6713A
5
VID Tables
5.1
Mapping for the Intel VR11 Mode
Table 5. Voltage identification (VID) Mapping for Intel VR11 Mode
VID7
VID6
VID5
VID4
VID3
VID2
VID1
VID0
800mV
400mV
200mV
100mV
50mV
25mV
12.5mV
6.25mV
5.2
Voltage identification (VID) for Intel VR11 Mode
Table 6. Voltage identification (VID) for Intel VR11 Mode (See Note).
Output Output Output
Output
HEX Code Voltage HEX Code Voltage HEX Code Voltage HEX Code Voltage
(1)
(
1)
(
1)
(1)
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
0
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
0
1
2
3
4
5
6
OFF
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
0
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
0
1
2
3
4
5
6
1.21250
1.20625
1.20000
1.19375
1.18750
1.18125
1.17500
1.16875
1.16250
1.15625
1.15000
1.14375
1.13750
1.13125
1.12500
1.11875
1.11250
1.10625
1.10000
1.09375
1.08750
1.08125
1.07500
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
9
9
9
9
9
9
9
0
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
0
1
2
3
4
5
6
0.81250
0.80625
0.80000
0.79375
0.78750
0.78125
0.77500
0.76875
0.76250
0.75625
0.75000
0.74375
0.73750
0.73125
0.72500
0.71875
0.71250
0.70625
0.70000
0.69375
0.68750
0.68125
0.67500
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
D
D
D
D
D
D
D
0
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
0
1
2
3
4
5
6
0.41250
0.40625
0.40000
0.39375
0.38750
0.38125
0.37500
0.36875
0.36250
0.35625
0.35000
0.34375
0.33750
0.33125
0.32500
0.31875
0.31250
0.30625
0.30000
0.29375
0.28750
0.28125
0.27500
OFF
1.60000
1.59375
1.58750
1.58125
1.57500
1.56875
1.56250
1.55625
1.55000
1.54375
1.53750
1.53125
1.52500
1.51875
1.51250
1.50625
1.50000
1.49375
1.48750
1.48125
1.47500
16/64
L6713A
VID Tables
Table 6. Voltage identification (VID) for Intel VR11 Mode (See Note). (continued)
Output Output Output Output
HEX Code Voltage HEX Code Voltage HEX Code Voltage HEX Code Voltage
(1)
(
1)
(
1)
(1)
1
1
1
1
1
1
1
1
1
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
3
3
3
3
3
3
3
3
7
8
9
A
B
C
D
E
F
0
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
0
1
2
3
4
5
6
7
1.46875
1.46250
1.45625
1.45000
1.44375
1.43750
1.43125
1.42500
1.41875
1.41250
1.40625
1.40000
1.39375
1.38750
1.38125
1.37500
1.36875
1.36250
1.35625
1.35000
1.34375
1.33750
1.33125
1.32500
1.31875
1.31250
1.30625
1.30000
1.29375
1.28750
1.28125
1.27500
1.26875
5
5
5
5
5
5
5
5
5
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
7
7
7
7
7
7
7
7
7
8
9
A
B
C
D
E
F
0
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
0
1
2
3
4
5
6
7
1.06875
1.06250
1.05625
1.05000
1.04375
1.03750
1.03125
1.02500
1.01875
1.01250
1.00625
1.00000
0.99375
0.98750
0.98125
0.97500
0.96875
0.96250
0.95625
0.95000
0.94375
0.93750
0.93125
0.92500
0.91875
0.91250
0.90625
0.90000
0.89375
0.88750
0.88125
0.87500
0.86875
9
9
7
8
9
A
B
C
D
E
F
0
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
0
1
2
3
4
5
6
7
0.66875
0.66250
0.65625
0.65000
0.64375
0.63750
0.63125
0.62500
0.61875
0.61250
0.60625
0.60000
0.59375
0.58750
0.58125
0.57500
0.56875
0.56250
0.55625
0.55000
0.54375
0.53750
0.53125
0.52500
0.51875
0.51250
0.50625
0.50000
0.49375
0.48750
0.48125
0.47500
0.46875
D
D
D
D
D
D
D
D
D
E
E
E
E
E
E
E
E
E
E
E
E
E
E
E
E
F
F
F
F
F
F
F
F
7
8
9
A
B
C
D
E
F
0
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
0
1
2
3
4
5
6
7
0.26875
0.26250
0.25625
0.25000
0.24375
0.23750
0.23125
0.22500
0.21875
0.21250
0.20625
0.20000
0.19375
0.18750
0.18125
0.17500
0.16875
0.16250
0.15625
0.15000
0.14375
0.13750
0.13125
0.12500
0.11875
0.11250
0.10625
0.10000
0.09375
0.08750
0.08125
0.07500
0.06875
9
9
9
9
9
9
9
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
B
B
B
B
B
B
B
B
17/64
VID Tables
L6713A
Table 6. Voltage identification (VID) for Intel VR11 Mode (See Note). (continued)
Output Output Output Output
HEX Code Voltage HEX Code Voltage HEX Code Voltage HEX Code Voltage
(1)
(
1)
(
1)
(1)
3
3
3
3
3
3
3
3
8
9
1.26250
1.25625
1.25000
1.24375
1.23750
1.23125
1.22500
1.21875
7
7
7
7
7
7
7
7
8
9
0.86250
0.85625
0.85000
0.84375
0.83750
0.83125
0.82500
0.81875
B
B
B
B
B
B
B
B
8
9
0.46250
0.45625
0.45000
0.44375
0.43750
0.43125
0.42500
0.41875
F
F
F
F
F
F
F
F
8
9
0.06250
0.05625
0.05000
0.04375
0.03750
0.03125
OFF
A
B
C
D
E
F
A
B
C
D
E
F
A
B
C
D
E
F
A
B
C
D
E
F
OFF
1. According to VR11 specs, the device automatically regulates output voltage 19mV lower to avoid any
external offset to modify the built-in 0.5% accuracy improving TOB performances. Output regulated voltage
is than what extracted from the table lowered by 19mV built-in offset.
5.3
Voltage identifications (VID) for Intel VR10 Mode + 6.25mV
(VID7 does not care)
Table 7. Voltage identifications (VID) for Intel VR10 Mode + 6.25mV (See Note).
Output
Output
VID VID VID VID VID VID VID
VID VID VID VID VID VID VID
Voltage
Voltage
4
3
2
1
0
5
6
4
3
2
1
0
5
6
(1)
(1)
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1.60000
1.59375
1.58750
1.58125
1.57500
1.56875
1.56250
1.55625
1.55000
1.54375
1.53750
1.53125
1.52500
1.51875
1.51250
1.50625
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1.20000
1.19375
1.18750
1.18125
1.17500
1.16875
1.16250
1.15625
1.15000
1.14375
1.13750
1.13125
1.12500
1.11875
1.11250
1.10625
18/64
L6713A
VID Tables
Table 7. Voltage identifications (VID) for Intel VR10 Mode + 6.25mV (See Note).
Output
Output
VID VID VID VID VID VID VID
VID VID VID VID VID VID VID
Voltage
Voltage
4
3
2
1
0
5
6
4
3
2
1
0
5
6
(1)
(1)
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1.50000
1.49375
1.48750
1.48125
1.47500
1.46875
1.46250
1.45625
1.45000
1.44375
1.43750
1.43125
1.42500
1.41875
1.41250
1.40625
1.40000
1.39375
1.38750
1.38125
1.37500
1.36875
1.36250
1.35625
1.35000
1.34375
1.33750
1.33125
1.32500
1.31875
1.31250
1.30625
1.30000
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1.10000
1.09375
OFF
OFF
OFF
OFF
1.08750
1.08125
1.07500
1.06875
1.06250
1.05625
1.05000
1.04375
1.03750
1.03125
1.02500
1.01875
1.01250
1.00625
1.00000
0.99375
0.98750
0.98125
0.97500
0.96875
0.96250
0.95625
0.95000
0.94375
0.93750
0.93125
0.92500
19/64
VID Tables
L6713A
Output
Table 7. Voltage identifications (VID) for Intel VR10 Mode + 6.25mV (See Note).
Output
VID VID VID VID VID VID VID
VID VID VID VID VID VID VID
Voltage
Voltage
4
3
2
1
0
5
6
4
3
2
1
0
5
6
(1)
(1)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1.29375
1.28750
1.28125
1.27500
1.26875
1.26250
1.25625
1.25000
1.24375
1.23750
1.23125
1.22500
1.21875
1.21250
1.20625
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
0.91875
0.91250
0.90625
0.90000
0.89375
0.88750
0.88125
0.87500
0.86875
0.86250
0.85625
0.85000
0.84375
0.83750
0.83125
1. According to VR10.x specs, the device automatically regulates output voltage 19mV lower to avoid any
external offset to modify the built-in 0.5% accuracy improving TOB performances. Output regulated voltage
is than what extracted from the table lowered by 19mVbuilt-in offset. VID7 doesn’t care.
5.4
5.5
Mapping for the AMD 6BIT Mode
Table 8. Voltage identifications (VID) mapping for AMD 6BIT Mode
VID4
VID3
VID2
VID1
VID0
400mV
200mV
100mV
50mV
25mV
Voltage identifications (VID) codes for AMD 6BIT Mode
Table 9. Voltage identifications (VID) codes for AMD 6BIT Mode (See Note).
Output
Output
Voltage
VID VID VID VID VID VID
VID VID VID VID VID VID
Voltage
5
4
3
2
1
0
5
4
3
2
1
0
(1)
(1)
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
1
0
1
1.5500
1.5250
1.5000
1.4750
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
1
0
1
0.7625
0.7500
0.7375
0.7250
20/64
L6713A
VID Tables
Table 9. Voltage identifications (VID) codes for AMD 6BIT Mode (See Note). (continued)
Output
Output
Voltage
VID VID VID VID VID VID
VID VID VID VID VID VID
Voltage
5
4
3
2
1
0
5
4
3
2
1
0
(1)
(1)
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1.4500
1.4250
1.4000
1.3750
1.3500
1.3250
1.3000
1.2750
1.2500
1.2250
1.2000
1.1750
1.1500
1.1250
1.1000
1.0750
1.0500
1.0250
1.0000
0.9750
0.9500
0.9250
0.9000
0.8750
0.8500
0.8250
0.8000
0.7750
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0.7125
0.7000
0.6875
0.6750
0.6625
0.6500
0.6375
0.6250
0.6125
0.6000
0.5875
0.5750
0.5625
0.5500
0.5375
0.5250
0.5125
0.5000
0.4875
0.4750
0.4625
0.4500
0.4375
0.4250
0.4125
0.4000
0.3875
0.3750
1. VID6 Not Applicable, need to be left unconnected.
21/64
Reference Schematic
L6713A
6
Reference Schematic
Figure 3. Reference Schematic - Intel VR10.x, VR11 - 3-Phase Operation
VIN
LIN
to BOOT1
to BOOT2
to BOOT3
GNDIN
62
56
2
CIN
VIN
VCCDR1
VCCDR2
BOOT1
UGATE1
PHASE1
LGATE1
1
HS1
57
VCCDR3
63,64
61
L1
C
R
15
LS1
VCC
60
31
30
PGND1
CS1-
19,50
33
SGND
OVP
Rg
CS1+
10
9
VIN
16
35
BOOT2
UGATE2
PHASE2
LGATE2
PHASE_SEL
OCSET
HS2
7,8
55
L2
C
37
32
OSC/FAULT
R
to SSEND
LS2
SS/LTBG/AMD
RSSOSC
54
27
26
PGND2
CS2-
VID7 / DVID
VID6
39
40
41
42
43
44
45
Rg
VID5
CS2+
VID4
VID3
Vcc_core
VID2
6
COUT
VIN
BOOT3
UGATE3
PHASE3
LGATE3
LOAD
GND_core
VID1
VID0
5
HS3
34
17
VID_SEL
OUTEN
VID_SEL
OUTEN
3,4
58
L3
R
LS3
18
23
59
29
28
LTB
PGND3
CS3-
C
Rg
CLTB
RLTB
COMP
CS3+
CF
RF
CP
46
47
SS_END
SS_END / PGOOD
VR_HOT
22
21
FB
DROOP
VR_FAN 48
+5V
CI
RI
NTC
RFB
49
TM
20
VSEN
FBG
RTM
ROFFSET
36
L6713A REF.SCH:
Intel Mode - 3-Phase Operation
22/64
L6713A
Reference Schematic
Figure 4. Reference Schematic - Intel VR10.x, VR11 - 2-Phase Operation
VIN
LIN
to BOOT1
to BOOT3
GNDIN
62
56
2
CIN
VIN
VCCDR1
VCCDR2
BOOT1
UGATE1
PHASE1
LGATE1
1
HS1
57
VCCDR3
63,64
61
L1
C
R
15
LS1
VCC
60
31
30
PGND1
CS1-
19,50
33
SGND
OVP
Rg
CS1+
10
9
16
35
BOOT2
UGATE2
PHASE2
LGATE2
PHASE_SEL
OCSET
7,8
55
37
32
OSC/FAULT
to SSEND
SS/LTBG/AMD
RSSOSC
54
27
PGND2
CS2-
VID7 / DVID
VID6
39
40
41
42
43
44
45
VID5
26 Short to SGND (or to VOUT)
CS2+
VID4
VID3
Vcc_core
VID2
6
COUT
VIN
BOOT3
UGATE3
PHASE3
LGATE3
LOAD
VID1
GND_core
VID0
5
HS3
34
17
VID_SEL
OUTEN
VID_SEL
OUTEN
3,4
L3
C
58
R
LS3
18
23
59
LTB
PGND3
CS3-
29
28
Rg
CLTB
RLTB
COMP
CS3+
CF
RF
CP
46
47
SS_END
SS_END / PGOOD
VR_HOT
22
21
FB
DROOP
VR_FAN 48
+5V
CI
RI
RFB
NTC
49
TM
20
VSEN
FBG
RTM
ROFFSET
36
L6713A REF.SCH:
Intel Mode -2-Phase Operation
23/64
Reference Schematic
Figure 5. Reference Schematic - AMD 6BIT - 3-Phase Operation
L6713A
VIN
LIN
to BOOT1
to BOOT2
to BOOT3
GNDIN
62
56
2
CIN
VIN
VCCDR1
VCCDR2
BOOT1
UGATE1
PHASE1
LGATE1
1
HS1
57
VCCDR3
63,64
61
L1
C
R
15
LS1
VCC
60
31
30
PGND1
CS1-
19,50
33
SGND
OVP
Rg
CS1+
10
9
VIN
16
35
BOOT2
UGATE2
PHASE2
LGATE2
PHASE_SEL
OCSET
HS2
37
32
7,8
55
L2
C
OSC/FAULT
SS/LTBG/AMD
R
LS2
54
27
26
38
39
40
41
42
43
44
45
PGND2
CS2-
VID7 / DVID
VID6
Rg
VID5
CS2+
VID4
VID3
Vcc_core
VID2
6
COUT
VIN
BOOT3
UGATE3
PHASE3
LGATE3
LOAD
GND_core
VID1
VID0
5
HS3
34
17
VID_SEL
OUTEN
3,4
58
L3
OUTEN
R
LS3
18
23
59
29
28
LTB
PGND3
CS3-
C
Rg
CLTB
RLTB
COMP
CS3+
CF
RF
CP
46
47
PGOOD
SS_END / PGOOD
VR_HOT
22
21
FB
DROOP
VR_FAN 48
+5V
CI
RI
RFB
NTC
49
TM
20
VSEN
FBG
RTM
ROFFSET
36
L6713A REF.SCH:
AMD Mode - 3-Phase Operation
24/64
L6713A
Reference Schematic
Figure 6. Reference Schematic - AMD 6BIT - 2-Phase Operation
VIN
LIN
to BOOT1
to BOOT3
GNDIN
62
56
2
CIN
VIN
VCCDR1
VCCDR2
BOOT1
UGATE1
PHASE1
LGATE1
1
HS1
57
VCCDR3
63,64
61
L1
C
R
15
LS1
VCC
60
31
30
PGND1
CS1-
19,50
33
SGND
OVP
Rg
CS1+
10
9
16
35
BOOT2
UGATE2
PHASE2
LGATE2
PHASE_SEL
OCSET
37
32
7,8
55
OSC/FAULT
SS/LTBG/AMD
54
27
38
39
40
41
42
43
44
45
PGND2
CS2-
VID7 / DVID
VID6
VID5
26 Short to SGND (or to VOUT)
CS2+
VID4
VID3
Vcc_core
VID2
6
COUT
VIN
BOOT3
UGATE3
PHASE3
LGATE3
LOAD
VID1
GND_core
VID0
5
HS3
34
17
VID_SEL
OUTEN
3,4
L3
OUTEN
58
R
LS3
18
23
59
LTB
PGND3
CS3-
C
29
28
Rg
CLTB
RLTB
COMP
CS3+
CF
RF
CP
46
47
PGOOD
SS_END / PGOOD
VR_HOT
22
21
FB
DROOP
VR_FAN 48
+5V
CI
RI
NTC
RFB
49
TM
20
VSEN
FBG
RTM
ROFFSET
36
L6713A REF.SCH:
AMD Mode - 2-Phase Operation
25/64
Device description
L6713A
7
Device description
L6713A is two/three phase PWM controller with embedded high current drivers providing
complete control logic and protections for a high performance step-down DC-DC voltage
regulator optimized for advanced microprocessor power supply.
Multi phase buck is the simplest and most cost-effective topology employable to satisfy the
increasing current demand of newer microprocessors and modern high current VRM
modules.
It allows distributing equally load and power between the phases using smaller, cheaper and
most common external power MOSFETs and inductors. Moreover, thanks to the equal
phase shift between each phase, the input and output capacitor count results in being
reduced. Phase interleaving causes in fact input rms current and output ripple voltage
reduction and show an effective output switching frequency increase: the 200kHz free-
running frequency per phase, externally adjustable through a resistor, results multiplied on
the output by the number of phases.
L6713A is a dual-edge asynchronous PWM controller featuring Load Transient Boost (LTB)
Technology™ (Patent Pending): the device turns on simultaneously all the phases as soon
as a load transient is detected allowing to minimize system cost by providing the fastest
response to load transition.
Load transition is detected (through LTB pin) measuring the derivate dV/dt of the output
voltage and the dV/dt can be easily programmed extending the system design flexibility.
Moreover, Load Transient Boost(LTB) Technology™ Gain can be easily modified in order to
keep under control the output voltage ring back.
LTB Technology™ can be disabled and in this condition the device works as a dual-edge
asynchronous PWM.
The controller allows to implement a scalable design: a three phase design can be easily
downgraded to two phase simply by leaving one phase not mounted and leaving
PHASE_SEL pin floating.
The same design can be used for more than one project saving development and debug
time. In the same manner, a two phase design can be further upgraded to three phase
facing with newer and highly-current-demanding applications.
L6713A permits easy system design by allowing current reading across inductor in fully
differential mode. Also a sense resistor in series to the inductor can be considered to
improve reading precision.
The current information read corrects the PWM output in order to equalize the average
current carried by each phase limiting the error to 3% over static and dynamic conditions
unless considering the sensing element spread.
The controller includes multiple DACs, selectable through an apposite pin, allowing
compatibility with both Intel VR10,VR11 and AMD 6BIT processors specifications, also
performing D-VID transitions accordingly.
Low-Side-Less start-up allows soft start over pre-biased output avoiding dangerous current
return through the main inductors as well as negative spike at the load side.
26/64
L6713A
Device description
L6713A provides a programmable Over-Voltage protection to protect the load from
dangerous over stress. It can be externally set to a fixed voltage through an apposite
resistor, or it can be set internally, latching immediately by turning ON the lower driver and
driving high the FAULT pin.
Furthermore, preliminary OVP protection also allows the device to protect load from
dangerous OVP when VCC is not above the UVLO threshold.
The Over-Current protection is on the total delivered current and causes the device turns
OFF all MOSFETs and latches the condition.
L6713A provides also system Thermal Monitoring: through an apposite pin the device
senses the temperature of the hottest component in the application driving the Warning and
the Alarm signal as a consequence.
A compact 10 x 10mm body TQFP64 package with exposed thermal pad allows dissipating
the power to drive the external MOSFET through the system board.
27/64
Configuring the device
L6713A
8
Configuring the device
Number of Phases and Multiple DACs need to be configured before the system starts-up by
programming the apposite pin PHASE_SEL and SS/LTBG/AMD pin.
The configuration of this pin identifies two main working areas (See Table 11) distinguishing
between compliancy with Intel VR10,VR11 or AMD 6BIT specifications. According to the
main specification considered, further customizazions can be done: main differences are
regarding the DAC table, soft-start implementation, protection management and Dynamic
VID Transitions. See Table 12 and See Table 13 for further details about the device
configuration.
8.1
Number of phases selection
L6713A allows to select between two and three phase operation simply using the
PHASE_SEL pin, as shown in the following table.
Table 10. Number of phases setting.
PHASE_SEL pin
Floating
Number of phases
2-PHASE
Phases used
Phase1, Phase3
Short to SGND
3-PHASE
Phase1, Phase2, Phase3
8.2
DAC Selection
L6713A embeds a selectable DAC (through SS/LTBG/AMD pin, See Table 11) that allows to
regulate the output voltage with a tolerance of 0.5% ( 0.6% for AMD DAC) recovering from
offsets and manufacturing variations. In case of selecting Intel Mode, the device
automatically introduces a -19mV (both VRD10.x and VR11) offset to the regulated voltage
in order to avoid any external offset circuitry to worsen the guaranteed accuracy and, as a
consequence, the calculated system TOB.
Table 11. DAC Settings (See Note).
SS / LTBG / AMD
Resistor(RSSOSC
)
DAC
Soft start time
LTB™Gain
OVP
UVP
vs. SGND
1.800V (typ)
Fixed
Not
or
-750mV
(typ)
0 (Short)
AMD
Programmable
Programmable
(LTB™Gain=2)
VID + 175mV
(typ)
Programmable
trough RSSOSC
Programmable
trough RSSOSC
-750mV
(typ)
> 2.4 kΩ
Intel
or
(LTB™Gain≤2)
Programmable
Note:
When selecting Intel Mode, SS/LTBG/AMD pin is used to select both Soft Start Time and
LTB™ Gain (see dedicated sections).
28/64
L6713A
Configuring the device
Output voltage is programmed through the VID pins: they are inputs of an internal DAC that
is realized by means of a series of resistors providing a partition of the internal voltage
reference. The VID code drives a multiplexer that selects a voltage on a precise point of the
divider. The DAC output is delivered to an amplifier obtaining the voltage reference (i.e. the
set-point of the error amplifier, VREF).
Table 12. Intel Mode Configuration (See Note).
1)
Function (
Pin
Typical Connection
It allows programming the soft-start time TSS
RSSOSC Resistor in series to
SS / LTBG /
and also the LTB Technology™ Gain. See “Soft Signal Diode vs. SSEND pin.
AMD
start” Section and See “Load Transient Boost
TechnologyTM” Section for details.
(LTB™Gain = 2, default value).
It allows selecting between VR11 DAC or
VR10.x + 6.25mV extended DAC.
Static info, no dynamic changes allowed.
Open: VR11 (Table 6 ).
Short to SGND: VR10.x
(Table 7 ).
VID_SEL
They allow programming the Output Voltage
according to Table 6 and Table 7.
Dynamic transitions managed, See “Dynamic
VID transitions” Section for details.
Open: Logic “1” (25µA pull-up)
Short to SGND: “0”
VID7 to VID0
SSEND /
PGOOD
Soft Start end signal set free after soft-start has Pull-up to anything lower than
finished. It only indicates soft-start has finished. 5V.
Note:
VID pull-ups / pull-downs, VID voltage thresholds and OUTEN thresholds changes
according to the selected DAC: See Table 4 for details.
Table 13. AMD Mode Configuration (See Note).
Pin
Function
It allows programming AMD 6 BIT DAC.
Not Applicable
Typical Connection
Short to SGND.
SS / LTBG /
AMD
VID_SEL
VID7 / DVID
VID6
Need to be shorted to SGND.
Not Applicable
Pulled high when performing a D-VID transition.
The pin is kept high with a 32 clock cycles delay.
Not Applicable
Need to be shorted to SGND.
They allow programming the Output Voltage
according to Table 9.
Open: “0” (12.5µA pull-down)
VID5 to VID0
Dynamic transitions managed, See “Dynamic
VID transitions” Section for details.
Pull-up to V > 1.4V: “1”
Power Good signal set free after soft-start has
finished whenever the output voltage is within
limits.
SSEND /
PGOOD
Pull-up to anything lower than
5V.
Note:
VID pull-ups / pull-downs, VID voltage thresholds and OUTEN thresholds changes
according to the selected DAC: See Table 4 for details.
29/64
Power dissipation
L6713A
9
Power dissipation
L6713A embeds high current MOSFET drivers for both high side and low side MOSFETs: it
is then important to consider the power the device is going to dissipate in driving them in
order to avoid overcoming the maximum junction operative temperature. In addition, since
the device has an exposed pad to better dissipate the power, the thermal resistance
between junction and ambient consequent to the layout is also important: thermal pad
needs to be soldered to the PCB ground plane through several VIAs in order to facilitate the
heat dissipation.
Two main terms contribute in the device power dissipation: bias power and drivers' power.
The first one (PDC) depends on the static consumption of the device through the supply pins
and it is simply quantifiable as follow (assuming to supply HS and LS drivers with the same
VCC of the device):
PDC = VCC ⋅ (ICC + N ⋅ ICCDRx + N ⋅ IBOOTx
)
where N is the number of phases.
Drivers' power is the power needed by the driver to continuously switch on and off the
external MOSFETs; it is a function of the switching frequency and total gate charge of the
selected MOSFETs. It can be quantified considering that the total power PSW dissipated to
switch the MOSFETs (easy calculable) is dissipated by three main factors: external gate
resistance (when present), intrinsic MOSFET resistance and intrinsic driver resistance. This
last term is the important one to be determined to calculate the device power dissipation.
The total power dissipated to switch the MOSFETs results:
PSW = N ⋅ FSW ⋅ (QGHS ⋅ VBOOT + QGLS ⋅ VCCDRx
)
External gate resistors helps the device to dissipate the switching power since the same
power PSW will be shared between the internal driver impedance and the external resistor
resulting in a general cooling of the device. When driving multiple MOSFETs in parallel, it is
suggested to use one gate resistor for each MOSFET.
30/64
L6713A
Power dissipation
Figure 7. L6713A Dissipated power (quiescent + switching).
2-PHASE Operation; Rgate=0; Rmosfet=0
2-PHASE Operation; Rhs=2.2; Rls=3.3; Rmosfet=1
4500
4000
HS=1xSTD38NH02L; LS=1xSTD90NH02L
HS=2xSTD38NH02L; LS=2xSTD90NH02L
HS=1xSTD55NH2LL; LS=1xSTD95NH02L
HS=2xSTD55NH2LL; LS=2xSTD95NH02L
HS=3xSTD55NH22L; LS=3xSTD95NH02L
HS=1xSTD38NH02L; LS=1xSTD90NH02L
HS=2xSTD38NH02L; LS=2xSTD90NH02L
HS=1xSTD55NH2LL; LS=1xSTD95NH02L
HS=2xSTD55NH2LL; LS=2xSTD95NH02L
HS=3xSTD55NH22L; LS=3xSTD95NH02L
4000
3500
3000
2500
2000
1500
1000
500
3500
3000
2500
2000
1500
1000
500
0
0
50
150
250
350
450
550
650
750
850
950
1050
50
150
250
350
450
550
650
750
850
950
1050
Switching frequency[kHz] per phase
Switching frequency[kHz] per phase
3-PHASE Operation; Rgate=0; Rmosfet=0
3-PHASE Operation; Rhs=2.2; Rls=3.3; Rmosfet=1
4000
3500
3000
2500
2000
1500
1000
500
7000
6000
5000
4000
3000
2000
1000
0
HS=1xSTD38NH02L; LS=1xSTD90NH02L
HS=2xSTD38NH02L; LS=2xSTD90NH02L
HS=1xSTD55NH2LL; LS=1xSTD95NH02L
HS=2xSTD55NH2LL; LS=2xSTD95NH02L
HS=3xSTD55NH22L; LS=3xSTD95NH02L
HS=1xSTD38NH02L; LS=1xSTD90NH02L
HS=2xSTD38NH02L; LS=2xSTD90NH02L
HS=1xSTD55NH2LL; LS=1xSTD95NH02L
HS=2xSTD55NH2LL; LS=2xSTD95NH02L
HS=3xSTD55NH22L; LS=3xSTD95NH02L
0
50
150
250
350
450
550
650
750
850
950
1050
50
150
250
350
450
550
650
750
850
950
1050
Switching frequency [kHz] per phase
Switching frequency [kHz] per phase
31/64
Current reading and current sharing loop
L6713A
10
Current reading and current sharing loop
L6713A embeds a flexible, fully-differential current sense circuitry that is able to read across
inductor parasitic resistance or across a sense resistor placed in series to the inductor
element. The fully-differential current reading rejects noise and allows placing sensing
element in different locations without affecting the measurement's accuracy.
Reading current across the inductor DCR, the current flowing trough each phase is read
using the voltage drop across the output inductor or across a sense resistor in its series and
internally converted into a current. The trans-conductance ratio is issued by the external
resistor Rg placed outside the chip between CSx- pin toward the reading points.
The current sense circuit always tracks the current information, no bias current is sourced
from the CSx+ pin: this pin is used as a reference keeping the CSx- pin to this voltage. To
correctly reproduce the inductor current an R-C filtering network must be introduced in
parallel to the sensing element.
The current that flows from the CSx- pin is then given by the following equation (See
Figure 8):
DCR 1 + s ⋅ L ⁄ (DCR)
------------- ------------------------------------------------
⋅ I
PHASEx
ICSx-
=
⋅
Rg
1 + s ⋅ R ⋅ C
Where IPHASEx is the current carried by the relative phase.
Figure 8. Current reading connections.
IPHASEx
Lx DCRx
PHASEx
CSx+
R
C
NO Bias
ICSx-=IINFOx
CSx-
Rg
Inductor DCR Current Sense
Considering now to match the time constant between the inductor and the R-C filter applied
(Time constant mismatches cause the introduction of poles into the current reading network
causing instability. In addition, it is also important for the load transient response and to let
the system show resistive equivalent output impedance), it results:
DCR
Rg
DCR
Rg
L
-------------
-------------
⋅ IPHASEx
------------- = R ⋅ C
⇒
ICSx-
=
⋅ IPHASEx = IINFOx
⇒
IINFOX
=
DCR
Where IINFOx is the current information reproduced internally.
32/64
L6713A
Current reading and current sharing loop
The Rg trans-conductance resistor has to be selected using the following formula, in order
to guarantee the correct funcionality of internal current reading circuitry:
I
(MAX)
N
DCR(MAX)
-------------------------------- --O----U----T--------------------
Rg =
⋅
20µA
Current sharing control loop reported in Figure 9: it considers a current IINFOx proportional to
the current delivered by each phase and the average currentAVG = ΣIINFOx ⁄ N. The error
between the read current IINFOx and the reference IAVG is then converted into a voltage that
with a proper gain is used to adjust the duty cycle whose dominant value is set by the
voltage error amplifier in order to equalize the current carried by each phase. Details about
connections are shown in Figure 8.
Figure 9. Current sharing loop.
IINFO1
PWM1 Out
IAVG
IINFO2
AVG
PWM2 Out
From EA
IINFO3
PWM3 Out
(PHASE2 Only when using 3-PHASE Operation)
33/64
Differential remote voltage sensing
L6713A
11
Differential remote voltage sensing
The output voltage is sensed in fully-differential mode between the FB and FBG pin. The FB
pin has to be connected through a resistor to the regulation point while the FBG pin has to
be connected directly to the remote sense ground point.
In this way, the output voltage programmed is regulated between the remote sense point
compensating motherboard or connector losses.
Keeping the FB and FBG traces parallel and guarded by a power plane results in common
mode coupling for any picked-up noise.
Figure 10. Differential remote voltage sensing connections
VPROG
ERROR AMPLIFIER
VREF
GND DROP
RECOVERY
IOFFSET
IDROOP
FBG
VSEN
DROOP
FB
COMP
ROFFSET
RFB
RF
CF
To GND_core
(Remote Sense)
To VCC_core
(Remote Sense)
CP
34/64
L6713A
Voltage positioning
12
Voltage positioning
Output voltage positioning is performed by selecting the reference DAC and by
programming the Droop Function and Offset to the reference (See Figure 11). The currents
sourced from DROOP and sunk from VSEN pins cause the output voltage to vary according
to the external RFB and ROFFSET resistor.
The output voltage is then driven by the following relationship:
VOUT = VREF – (RFB + ROFFSET) ⋅ (IDROOP) + (ROFFSET) ⋅ (IOFFSET
)
⎧
⎨
⎩
VID – 19mV VR10 - VR11
VID AMD 6BIT
VREF
=
DROOP function can be disabled as well as the OFFSET: connecting DROOP pin and FB
pin together implements the load regulation dependence while, if this effect is not desired,
by shorting DROOP pin to SGND it is possible for the device to operate as a classic Voltage
Mode Buck converter. The DROOP pin can also be connected to SGND through a resistor
obtaining a voltage proportional to the delivered current usable for monitoring purposes.
OFFSET can be disabled by using ROFFSET equal to zero.
Figure 11. Voltage positioning (left) and droop function (right)
VPROG
ERROR AMPLIFIER
VREF
ESR Drop
GND DROP
RECOVERY
V
V
MAX
IOFFSET
IDROOP
NOM
V
MIN
FBG
VSEN
DROOP
FB
COMP
RESPONSE WITHOUT DROOP
RESPONSE WITH DROOP
ROFFSET
RFB
RF
CF
To GND_core
(Remote Sense)
To VCC_core
(Remote Sense)
CP
12.1
Offset (Optional)
The IOFFSET current (See Table 4) sunk from the VSEN pin allows programming a positive
offset (VOS) for the output voltage by connecting a resistor ROFFSET between VSEN pin and
VOUT, as shown in the Figure 11; this offset has to be considered in addition to the one
already introduced during the production stage for the Intel VR10,VR11 Mode.
The output voltage is then programmed as follow:
VOUT = VREF – (RFB + ROFFSET) ⋅ (IDROOP) + (ROFFSET) ⋅ (IOFFSET
)
Offset resistor can be designed by considering the following relationship:
VOS
ROFFSET = ---------------------
IOFFSET
Offset automatically given by the DAC selection differs from the offset implemented through
the IOFFSET current: the built-in feature is trimmed in production and assures 0.5% error
( 0.6% for the AMD DAC) over load and line variations.
35/64
Voltage positioning
L6713A
12.2
Droop function (Optional)
This method "recovers" part of the drop due to the output capacitor ESR in the load
transient, introducing a dependence of the output voltage on the load current: a static error
proportional to the output current causes the output voltage to vary according to the sensed
current.
As shown in Figure 11, the ESR drop is present in any case, but using the droop function
the total deviation of the output voltage is minimized.Moreover, more and more high-
performance CPUs require precise load-line regulation to perform in the proper way.
DROOP function is not then required only to optimize the output filter, but also beacomes a
requirement of the load.
Connecting DROOP pin and FB pin together, the device forces a current IDROOP
,
proportional to the read current, into the feedback resistor (RFB+ROFFSET) implementing the
load regulation dependence. Since IDROOP depends on the current information about the N
phases, the output characteristic vs. load current is then given by (neglecting the OFFSET
voltage term):
VOUT = VREF – (RFB + ROFFSET) ⋅ IDROOP
DCR
Rg
-------------
⋅ IOUT = VREF – RDROOP ⋅ IOUT
V
REF – (RFB + ROFFSET) ⋅
Where DCR is the inductor parasite resistance (or sense resistor when used) and IOUT is the
output current of the system. The whole power supply can be then represented by a "real"
voltage generator with an equivalent output resistance RDROOP and a voltage value of VREF
.
R
FB resistor can be also designed according to the RDROOP specifications as follow:
Rg
RFB = RDROOP ⋅ ------------- – ROFFSET
DCR
Droop function is optional, in case it is not desired, the DROOP pin can be disconnected
from the FB and an information about the total delivered current becomes available for
debugging, and/or current monitoring. When not used, the pin can be shorted to SGND.
36/64
L6713A
Load Transient Boost TechnologyTM
13
Load Transient Boost TechnologyTM
Load Transient Boost (LTB) Technology™ (Patent Pending) is a L6713A feature to minimize
the count of output filter capacitors (MLCC and Bulk capacitors) to respect the load transient
specifications.
The device turns on simultaneously all the phases as soon as a load transient is detected
and keep them on for the necessary time to supply the extra energy to the load.This time
depends on the COMP pin voltage and on a internal gain, in order to keep under control the
output voltage ring back.
Load Transition is detected through LTB pin connecting a R -C
vs. VOUT: the device
LTB LTB
measures the derivate dV/dt of the output voltage and so it is able to turns on all the phases
immediately after a load transition detection, minimizing the delay intervention.
Modifying the R -C
values the dV/dt can be easily programmed, extending the system
LTB LTB
design flexibility
dVOUT
RLTB = -----------------
50µA
1
CLTB = ----------------------------------------------------------------
2 ⋅ π ⋅ RLTB ⋅ N ⋅ FSW
where dV
is the output voltage drop due to load transition.
OUT
Moreover, Load Transient Boost (LTB) Technology™ Gain can be easily modified in order to
keep under control the output voltage ring back.
Figure 12. LTB connections (left) and waveform (right).
LTB
To VCC_Core
RLTB
CLTB
Short LTB pin to SGND to disable the LTB Technology™: in this condition the device works
as a dual-edge asynchronous PWM controller.
37/64
Load Transient Boost TechnologyTM
L6713A
13.1
LTB Gain modification (Optional)
The internal gain can be modified through the SS/LTBG/AMD pin, as shown in the
Figure 13.
The SS/LTBG/AMD pin is also used to set the Soft Start time, so the current flowing from
SS/LTBG/AMD pin has to be modified only after the Soft Start has been finished.
Using the D diode and R3 resistor (red square in Figure 13), after the Soft Start the current
flowing from SS/LTBG/AMD pin versus SGND is zero, so the internal gain is not modified.As
a consequence the LTB gain is the default value (LTB Gain = 2).
To decrease the LTB gain it is necessary to use the circuit composed by Q, R1 and R2 (blue
square in Figure 13.)
After the Soft-Start the current flowing from SS/LTBG/AMD pin depends only on R1 resistor,
so reducing the R1 resistor value the LTB gain can be reduced. The sum of R1 and R2
resistors have to be selected to have the desiderated Soft Start time.
Figure 13. SS/OSC/LTB connections to modify LTB Gain when using INTEL mode.
SS_END
SS/LTBG/ AMD
LTB GAIN=2
LTB GAIN <2
V
Pull-Up(1.2V)
D
R3
RPull-Up(1k)
R1
R2
Q
to SSEND Logic
Rb(10k)
38/64
L6713A
Dynamic VID transitions
14
Dynamic VID transitions
The device is able to manage Dynamic VID Code changes that allow Output Voltage
modification during normal device operation. OVP and UVP signals (and PGOOD in case of
AMD Mode) are masked during every VID transition and they are re-activated after the
transition finishes with a 32 clock cycles delay to prevent from false triggering due to the
transition.
When changing dynamically the regulated voltage (D-VID), the system needs to charge or
discharge the output capacitor accordingly. This means that an extra-current ID-VID needs to
be delivered, especially when increasing the output regulated voltage and it must be
considered when setting the over current threshold. This current can be estimated using the
following relationships:
dVOUT
-----------------
⋅
ID – VID = COUT
dTVID
where dVOUT is the selected DAC LSB (6.25mV for VR11 and VR10 Extended DAC or
25mV for AMD DAC) and TVID is the time interval between each LSB transition (externally
driven). Overcoming the OC threshold during the dynamic VID causes the device to enter
the constant current limitation slowing down the output voltage dV/dt also causing the failure
in the D-VID test.
L6713A checks for VID code modifications (See Figure 14) on the rising edge of an internal
additional DVID-clock and waits for a confirmation on the following falling edge. Once the
new code is stable, on the next rising edge, the reference starts stepping up or down in LSB
increments every VID-clock cycle until the new VID code is reached. During the transition,
VID code changes are ignored; the device re-starts monitoring VID after the transition has
finished on the next rising edge available. VID-clock frequency (FDVID) depends on the
operative mode selected: for Intel Mode it is in the range of 1MHz to assure compatibility
with the specifications while, for AMD Mode, this frequency is lowered to about 250kHz.
When L6713A performs a D-VID transition in AMD Mode, DVID pin is pulled high as long as
the device is performing the transition (also including the additional 32clocks delay)
Warning: Warning: if the new VID code is more than 1 LSB different
from the previous, the device will execute the transition
stepping the reference with the DVID-clock frequency FDVID
until the new code has reached: for this reason it is
recommended to carefully control the VID change rate in
order to carefully control the slope of the output voltage
variation especially in Intel Mode.
39/64
Dynamic VID transitions
Figure 14. Dynaminc VID Transitions.
L6713A
VID Clock
VID [0,7]
t
t
Int. Reference
TDVID
T
sw
t
t
V
out
TVID
x 4 Step VID Transition
4 x 1 Step VID Transition
Vout Slope Controlled by internal
DVID-Clock Oscillator
Vout Slope Controlled by external
driving circuit (TVID
)
40/64
L6713A
Enable and disable
15
Enable and disable
L6713A has three different supplies: VCC pin to supply the internal control logic, VCCDRx
to supply the low side drivers and BOOTx to supply the high side drivers. If the voltage at
pins VCC and VCCDRx are not above the turn on thresholds specified in the Electrical
characteristics, the device is shut down: all drivers keep the MOSFETs OFF to show high
impedance to the load. Once the device is correctly supplied, proper operation is assured
and the device can be driven by the OUTEN pin to control the power sequencing. Setting
the pin free, the device implements a soft start up to the programmed voltage. Shorting the
pin to SGND, it resets the device (SS_END/PGOOD is shorted to SGND in this condition)
from any latched condition and also disables the device keeping all the MOSFET turned
OFF to show high impedance to the load.
41/64
Soft start
L6713A
16
Soft start
L6713A implements a soft-start to smoothly charge the output filter avoiding high in-rush
currents to be required to the input power supply. The device increases the reference from
zero up to the programmed value in different ways according to the selected Operative
Mode and the output voltage increases accordingly with closed loop regulation.
The device implements Soft-Start only when all the power supplies are above their own turn-
on thresholds and the OUTEN pin is set free.
At the end of the digital Soft-Start, SS_END/PGOOD signal is set free. Protections are
active during this phase; Under Voltage is enabled when the reference voltage reaches 0.6V
while Over Voltage is always enabled with a threshold dependent on the selected Operative
Mode or with the fixed threshold programmed by ROVP (See “Over voltage and
programmable OVP” Section).
Figure 15. Soft Start
Intel Mode
AMD 6BIT Mode
OUTEN
OUTEN
V
OVP
t
t
V
t
t
OUT
OUT
OVP
SS_END
PGOOD
T
T
T T
4
t
t
1
2
3
T
SS
T
SS
16.1
Intel mode
Once L6713A receives all the correct supplies and enables, and Intel Mode has been
selected, it initiates the Soft-Start phase with a T1=1ms(min) delay. After that, the reference
ramps up to VBOOT=1.081V (1.100V - 19mV) in T2 according to the SS/LTBG/AMD settings
and waits for T3=75µsec(typ) during which the device reads the VID lines. Output voltage will
then ramps up to the programmed value in T4 with the same slope as before (See
Figure 15).
SS/LTB/AMD defines the frequency of an internal additional Soft-Start-oscillator used to
step the reference from zero up to the programmed value; this oscillator is independent from
the main oscillator whose frequency is programmed through the OSC pin.
In particular, it allows to precisely programming the start-up time up to VBOOT (T2) since it is
a fixed voltage independent by the programmed VID. Total Soft-Start time dependence on
the programmed VID results (See Figure 17 and See Figure 19).
42/64
L6713A
Soft start
Protections are active during Soft-Start, UVP is enabled after the reference reaches 0.6V
while OVP is always active with a fixed 1.24V threshold before VBOOT and with the threshold
coming from the VID (or the programmed VOVP) after VBOOT (See red-dashed line in
Figure 15).
Note:
If during T3 the programmed VID selects an output voltage lower than VBOOT, the output
voltage will ramp to the programmed voltage starting from VBOOT
.
16.1.1
SS/LTB/AMD connections when using LTB Gain = 2
SS/LTB/AMD pin sets then the Output Voltage dV/dt during Soft-Start according to the
resistor RSSOSC connected vs. SSEND/PGOOD pin through a signal diode(See Figure 16).
Figure 16. SS/LTBG/AMD connections for INTEL mode, when using LTB Gain = 2
SSEND/PGOOD
SS/LTBG/AMD
V
Pull-Up
R
SSOSC
R
Pull-Up
to SSEND Logic
1.24 – VDIODE[V]
----------------------------------------------
1.24
RSSOSC[kΩ] = T2[µs] ⋅ 4.9783 ⋅ 10–2
⋅
⎧
⎪
⎪
⎨
⎪
⎪
⎩
RSSOSC[kΩ]
5.3816 ⋅ 10–2
1.24
a)
b)
------------------------------------- ----------------------------------------------
⋅
⋅ VSS
1.24 – VDIODE[V]
TSS[µs] = 1075[µs] +
RSSOSC[kΩ]
1.24
------------------------------------- ----------------------------------------------
⋅
⋅ [VBOOT + (VBOOT – VSS)
5.3816 ⋅ 10–2
1.24 – VDIODE[V]
⎧
a) if(VSS >VBOOT
)
⎪
⎨
⎪
⎩
b) if(VSS < VBOOT
)
where TSS is the time spent to reach the programmed voltage VSS and RSSOSC the resistor
connected between SS/LTBG/AMD and SSEND (through a signal diode) in kΩ.
43/64
Soft start
L6713A
, diode versus SSEND.
Figure 17. Soft-start time for Intel mode when using R
SSOSC
7
6
Time to Vboot
Time to 1.6000V
5
4
3
2
1
0
1
10
100
1000
Rssosc [kOhms] vs. SSEND through sognal diode
16.1.2
SS/LTB/AMD connections when using LTB Gain < 2
When using LTB Gain <2, the equivalent R
resistance is composed by the sum of
SSOSC
R +R ) because until the Soft Start is not finished the Q transistor is OFF (See Figure 18).
1
2
Figure 18. SS/LTBG/AMD connections for INTEL mode, when using LTB Gain < 2
SS_END
SS/LTBG/ AMD
VPull-Up(1.2V)
RPull-Up(1k)
R1
R2
Q
RSSOSC=R1+R2
to SSEND Logic
Rb(10k)
RSSOSC[kΩ] = T2[µs] ⋅ 4.9783 ⋅ 10–2
⎧
RSSOSC[kΩ]
5.3816 ⋅ 10–2
-------------------------------------
⎪
⎪
⎨
⎪
⎪
⎩
⋅ VSS
if(VSS >VBOOT
)
TSS[µs] = 1075[µs] +
RSSOSC[kΩ]
-------------------------------------
⋅ [VBOOT + (VBOOT – VSS)] if(VSS < VBOOT
)
5.3816 ⋅ 10–2
where TSS is the time spent to reach the programmed voltage VSS and RSSOSC the resistor
connected between SS/LTBG/AMD and SGND (RSSOSC = R1 R2) in kΩ.
+
44/64
L6713A
Soft start
Figure 19. Soft-start time for Intel mode when using R
versus SGND.
SSOSC
5
4.5
Time to Vboot
4
Time to 1.6000V
3.5
3
2.5
2
1.5
1
0.5
0
1
10
100
1000
Rssosc [kOhms] vs. SGND
16.2
AMD mode
Once L6713A receives all the correct supplies and enables, and AMD Mode has been
selected, it initiates the Soft-Start by stepping the reference from zero up to the programmed
VID code (See Figure 15); the clock now used to step the reference is the same as the main
oscillator programmed by the OSC pin, SSOSC pin is not applicable in this case. The Soft-
Start time results then (See Figure 20):
dVOUT
----------------- = 3.125 ⋅ FSW[kkHz] ⇒TSS = -------------------------------------------------
dT 3.125 ⋅ FSW[kHz]
VSS
where TSS is the time spent to reach VSS and FSW is the main switching frequency
programmed by OSC pin. Protections are active during Soft-Start, UVP is enabled after the
reference reaches 0.6V while OVP is always active with the fixed 1.800V threshold (or the
programmed VOVP).
Figure 20. Soft-Start time for AMD mode
4
3.5
3
550
500
450
400
350
300
250
200
150
4
3.5
3
550
500
450
400
350
300
250
200
150
2.5
2
2.5
2
1.5
1
1.5
1
Time to 1.6000V
Time to 1.6000V
Time to 1.1000V
Time to 1.1000V
Switching Frequency per phase
Switching Frequency per phase
0.5
0
0.5
0
0
200
400
600
800
1000
0
200
400
600
800
1000
Rosc [kOhms] to SGND
Rosc [kOhms] to SGND
45/64
Soft start
L6713A
16.3
Low-side-less startup
In order to avoid any kind of negative undershoot on the load side during start-up, L6713A
performs a special sequence in enabling LS driver to switch: during the soft-start phase, the
LS driver results disabled (LS = OFF) until the HS starts to switch. This avoid the dangerous
negative spike on the output voltage that can happen if starting over a pre-biased output
(See Figure 21).
This particular feature of the device masks the LS turn-ON only from the control loop point of
view: protections are still allowed to turn-ON the LS MOSFET in case of over voltage if
needed.
Figure 21. Low-side-less start-up comparison
46/64
L6713A
Output voltage monitor and protections
17
Output voltage monitor and protections
L6713A monitors through pin VSEN the regulated voltage in order to manage the OVP, UVP
and PGOOD (when applicable) conditions. The device shows different thresholds when
programming different operation mode (Intel or AMD, See Table 11) but the behavior in
response to a protection event is still the same as described below.
When using OFFSET funcionality the OVP, UVP and PGOOD thresholds change in according to
the OFFSET voltage:
VSEN = VOUT – (ROFFSET) ⋅ (IOFFSET) ⇒VOUT[TH] = VSEN[TH] + (ROFFSET) ⋅ IOFFSET
Protections are active also during soft-start (See “Soft start” Section) while are masked
during D-VID transitions with an additional 32 clock cycle delay after the transition has
finished to avoid false triggering.
17.1
17.2
Under voltage
If the output voltage monitored by VSEN drops more than -750mV below the programmed
reference for more than one clock period, L6713A turns OFF all MOSFETs and latches the
condition: to recover it is required to cycle Vcc or the OUTEN pin. This is independent of the
selected operative mode.
Preliminary over voltage
To provide a protection while VCC is below the UVLOVCC threshold is fundamental to avoid
damage to the CPU in case of failed HS MOSFETs. In fact, since the device is supplied from
the 12V bus, it is basically “blind” for any voltage below the turn-ON threshold (UVLOVCC). In
order to give full protection to the load, a preliminary-OVP protection is provided while VCC
is within UVLOVCC and UVLOOVP
.
This protection turns-ON the low side MOSFETs as long as the VSEN pin voltage is greater
than 1.800V with a 350mV hysteresis. When set, the protection drives the LS MOSFET with
a gate-to-source voltage depending on the voltage applied to VCCDRx and independently
by the turn-ON threshold across these pins (UVLOVCCDR). This protection depends also on
the OUTEN pin status as detailed in Figure 22.
A simple way to provide protection to the output in all conditions when the device is OFF
(then avoiding the unprotected red region in Figure 22-Left) consists in supplying the
controller through the 5VSB bus as shown in Figure 22-Right: 5VSB is always present before
+12V and, in case of HS short, the LS MOSFET is driven with 5V assuring a reliable
protection of the load. Preliminary OVP is always active before UVLOVCC for both Intel and
AMD Modes.
47/64
Output voltage monitor and protections
Figure 22. Output voltage protections and typical principle connections
L6713A
+5VSB
(OUTEN = 0)
Preliminary OVP
VSEN Monitored
(OUTEN = 1)
Programmable OVP
VSEN Monitored
+12V
VCC
V
cc
UVLO
UVLO
VCC
VCCDR1
VCCDR2
VCCDR3
Preliminary OVP Enabled
VSEN Monitored
OVP
No Protection
Provided
17.3
Over voltage and programmable OVP
Once VCC crosses the turn-ON threshold and the device is enabled (OUTEN = 1), L6713A
provides an Over Voltage Protection: when the voltage sensed by VSEN overcomes the
OVP threshold, the controller permanently switches on all the low-side MOSFETs and
switches OFF all the high-side MOSFETs in order to protect the load. The OSC/ FAULT pin
is driven high (5V) and power supply or OUTEN pin cycling is required to restart
operations.The OVP Threshold varies according to the operative mode selected (See
Table 11).
The OVP threshold can be also programmed through the OVP pin: leaving the pin floating, it
is internally pulled-up and the OVP threshold is set according to Table 11. Connecting the
OVP pin to SGND through a resistor ROVP, the OVP threshold becomes the voltage present
at the pin. Since the OVP pin sources a constant IOVP=12.5µA current(See Table 4), the
programmed voltage becomes:
OVPTH
OVPTH = ROVP ⋅ 12.5µA
Filter OVP pin with 100pF(max) vs. SGND.
⇒
ROVP = -------------------
12.5µA
17.4
PGOOD (only for AMD mode)
It is an open-drain signal set free after the soft-start sequence has finished. It is pulled low
when the output voltage drops below -300mV of the programmed voltage.
48/64
L6713A
Over current protection
18
Over current protection
The device limits the total delivered current turning OFF all the MOSFETs as soon as the
delivery current is higher than an adjustable thresholds.This condition is lathed and power
supply or OUTEN pin cycling is required to restart operations.
The device sources a copy of I
current from the OCSET pin: connecting a resistor
DROOP
R
between OCSET pin and SGND the voltage at the OCSET pin depends on the total
OCP
delivery output current, as shown in the following relationships:
DCR
RG
-------------
⋅ IOUT
VOCSET = ROCP ⋅ IDROOP = ROCP
⋅
Figure 23. OCP Connections (left) and waveforms (right).
VOUT
OCSET
IDROOP
OCSET
OCP
COMPARATOR
UGATE
LGATE
ROCP
COCP
VOCTH=1.240V
As soon as the OCSET pin voltage is higher than the internal fixed thresholds V
(1.24V
OCTH
TYP, See Table 4), the device turns OFF all the MOSFETs and latches the condition.
The OCP threshold can be easily programmed through the R resistor:
OCP
RG
VOCTH
------------- --------------------------
ROCP
=
⋅
DCR IOUT(OCP)
The Output Over Current threshold has to be programmed, by designing the R
resistors,
OCP
to a safe value, in order to be sure that the device doesn't enter OCP during normal
operation of the device. This value must take into consideration also the extra current
needed during the Dynamic VID Transition ID-VID and, since the device reads across
inductor DCR, the process spread and temperature variations of these sensing elements.
Moreover, since also the internal threshold spreads, the R
minimum value VOCTH(min) of the threshold as follow:
design has to consider the
OCP
R
VOCTH(min)
IOUT(OCP)
----------------G-------------- ---------------------------------
ROCP
=
⋅
DCR(max)
where IOUT(OCP) is the total delivery current for the Over Current condition and it must be
calculated considering the maximum delivery current and ID-VID (when D-VID are
implemented):
I
OUT(OCP) >IOUTMAX + ID–VID
When it is necessary, filter OCSET pin to introduce a small delay in the Over Current
intervention.
49/64
Oscillator
L6713A
19
Oscillator
L6713A embeds two/three phase oscillator with optimized phase-shift (180º/120º phase-
shift) in order to reduce the input rms current and optimize the output filter definition.
The internal oscillator generates the triangular waveform for the PWM charging and
discharging with a constant current an internal capacitor. The switching frequency for each
channel, FSW, is internally fixed at 200kHz so that the resulting switching frequency at the
load side results in being multiplied by N (number of phases).
The current delivered to the oscillator is typically 25µA (corresponding to the free running
frequency FSW=200kHz) and it may be varied using an external resistor (ROSC) connected
between the OSC pin and SGND or VCC (or a fixed voltage greater than 1.24V). Since the
OSC pin is fixed at 1.24V, the frequency is varied proportionally to the current sunk (forced)
from (into) the pin considering the internal gain of 6KHz/µA.
In particular connecting ROSC to SGND the frequency is increased (current is sunk from the
pin), while connecting ROSC to VCC=12V the frequency is reduced (current is forced into the
pin), according the following relationships:
R
vs. SGND
OSC
1.240V
ROSC(kΩ)
kHz
µA
7.422 ⋅ 103
---------------------------
----------
-------------------------------
⇒
FSW = 200(kHz) +
3
⋅ 6
= 200(kHz) +
ROSC(kΩ)
7.422 ⋅ 103
---
⇒ROSC(kΩ) = -----------------------------------------------------------[kΩ]
FSW(kHz) – 200(kHz)
)
R
vs. +12V
OSC
6.456 ⋅ 104
12V – 1.240V
ROSC(kΩ)
kHz
µA
-----------------------------------
----------
FSW = 200(kHz) –
⋅ 6
= 200(kHz)–------------------------------- ⇒
ROSC(kΩ)
2
04
6.456 ⋅ 104
6
----- ⇒ROSC(kΩ) = -----------------------------------------------------------[kΩ]
)
200(kHz) – FSW(kHz)
Maximum programmable switching frequency per phase must be limited to 1MHz to avoid
minimum Ton limitation. Anyway, device power dissipation must be checked prior to design
high switching frequency systems.
Figure 24. ROSC vs. Switching Frequency
400
350
300
250
200
150
100
50
7000
6000
5000
4000
3000
2000
1000
0
0
150
250
350
450
550
650
750
850
950
1050
25
50
75
100
125
150
175
200
Fsw [kHz] Programmed
Fsw [kHz] Programmed
50/64
L6713A
Driver section
20
Driver section
The integrated high-current drivers allow using different types of power MOS (also multiple
MOS to reduce the equivalent RdsON), maintaining fast switching transition.
The drivers for the high-side MOSFETs use BOOTx pins for supply and PHASEx pins for
return. The drivers for the low-side MOSFETs use VCCDRx pin for supply and PGNDx pin
for return. A minimum voltage at VCCDRx pin is required to start operations of the device.
VCCDRx pins must be connected together.
The controller embodies a sophisticated anti-shoot-through system to minimize low side
body diode conduction time maintaining good efficiency saving the use of Schottky diodes:
when the high-side MOSFET turns OFF, the voltage on its source begins to fall; when the
voltage reaches 2V, the low-side MOSFET gate drive is suddenly applied. When the low-
side MOSFET turns OFF, the voltage at LGATEx pin is sensed. When it drops below 1V, the
high-side MOSFET gate drive is suddenly applied.
If the current flowing in the inductor is negative, the source of high-side MOSFET will never
drop. To allow the turning on of the low-side MOSFET even in this case, a watchdog
controller is enabled: if the source of the high-side MOSFET doesn't drop, the low side
MOSFET is switched on so allowing the negative current of the inductor to recirculate. This
mechanism allows the system to regulate even if the current is negative.
The BOOTx and VCCDRx pins are separated from IC's power supply (VCC pin) as well as
signal ground (SGND pin) and power ground (PGNDx pin) in order to maximize the
switching noise immunity. The separated supply for the different drivers gives high flexibility
in MOSFET choice, allowing the use of logic-level MOSFET. Several combination of supply
can be chosen to optimize performance and efficiency of the application.
Power conversion input is also flexible; 5V, 12V bus or any bus that allows the conversion
(See maximum duty cycle limitations) can be chosen freely.
51/64
System control loop compensation
L6713A
21
System control loop compensation
The control loop is composed by the Current Sharing control loop (See Figure 9) and the
Average Current Mode control loop. Each loop gives, with a proper gain, the correction to
the PWM in order to minimize the error in its regulation: the Current Sharing control loop
equalize the currents in the inductors while the Average Current Mode control loop fixes the
output voltage equal to the reference programmed by VID. Figure 25 shows the block
diagram of the system control loop.
The system Control Loop is reported in Figure 26. The current information IDROOP sourced
by the DROOP pin flows into RFB implementing the dependence of the output voltage from
the read current.
Figure 25. Main control loop
L3
PWM3
1 / 5
L2
PWM2
PWM1
C
R
OUT
OUT
1 / 5
1 / 5
L1
ERROR AMPLIFIER
V
REF
4 / 5
I
DROOP
I
I
I
INFO1
INFO2
INFO3
CURRENT SHARING
DUTY CYCLE
CORRECTION
COMP
FB
DROOP
Z (s)
Z
(s)
FB
F
(PHASE2 Only applies when using 3-PHASE Operation)
The system can be modeled with an equivalent single phase converter which only
difference is the equivalent inductor L/N (where each phase has an L inductor).The Control
Loop gain results (obtained opening the loop after the COMP pin):
PWM ⋅ ZF(s) ⋅ (RDROOP + ZP(s))
GLOOP(s) = –------------------------------------------------------------------------------------------------------------------------
ZF(s)
A(s)
1
⎛
⎞
[ZP(s) + ZL(s)] ⋅ -------------- + 1 + ----------- ⋅ RFB
⎝
⎠
A(s)
Where:
●
DCR is the Inductor parasitic resistance;
DCR
-------------
⋅ RFBis the equivalent output resistance determined by the droop
●
RDROOP
function;
=
Rg
●
ZP(s) is the impedance resulting by the parallel of the output capacitor (and its ESR)
and the applied load RO;
●
●
●
●
ZF(s) is the compensation network impedance;
ZL(s) is the parallel of the N inductor impedance;
A(s) is the error amplifier gain;
VIN
-- ------------------
4
PWM =
⋅
is the PWM transfer function where ∆VOSC is the oscillator ramp
5
∆VOSC
amplitude and has a typical value of 3V.
52/64
L6713A
System control loop compensation
Removing the dependence from the Error Amplifier gain, so assuming this gain high
enough, and with further simplifications, the control loop gain results:
V
Z
(s)
R
+ R
1 + s ⋅
C
⋅
(R
//R + ESR)
4
5
IN
F
O
DROOP
O
DROOP O
-- --------------------- --------------- ------------------------------------------- -------------------------------------------------------------------------------------------------------------------------------------------------------------
G
(s) = –
⋅
⋅
⋅
⋅
LOOP
∆V
R
R
R
2
OSC
FB
L
L
L
L
R
+ -------
----
-------
s
⋅
C
⋅
--------------------- + C
N ⋅
⋅
ESR + C
⋅
O
+ 1
N + s ⋅
N
O
O
O
N
R
O
The system Control Loop gain (See Figure 26) is designed in order to obtain a high DC gain
to minimize static error and to cross the 0dB axes with a constant -20dB/dec slope with the
desired crossover frequency ω . Neglecting the effect of ZF(s), the transfer function has one
T
zero and two poles; both the poles are fixed once the output filter is designed (LC filter
resonance ω ) and the zero (ωESR) is fixed by ESR and the Droop resistance.
LC
Figure 26. Equivalent Control Loop Block Diagram (left) and Bode Diagram (right).
d VOUT L / N
VOUT
PWM
dB
ESR
CO
RO
VREF
GLOOP(s)
K
DROOP
FB
COMP
CF
VSEN
FBG
ZF(s)
RF[dB]
RF
ZF(s)
CP
ω
ωLC
=
ωF
ωESR
Z
FB(s)
RFB
ωT
To obtain the desired shape an RF-CF series network is considered for the ZF(s)
implementation. A zero at ω =1/RFCF is then introduced together with an integrator. This
F
integrator minimizes the static error while placing the zero ω in correspondence with the L-
F
C resonance assures a simple -20dB/dec shape of the gain.
In fact, considering the usual value for the output filter, the LC resonance results to be at
frequency lower than the above reported zero.
Compensation network can be simply designed placing ω = ωLC and imposing the cross-
F
over frequency ω as desired obtaining (always considering that ω might be not higher than
T
T
1/10th of the switching frequency FSW):
RFB ⋅ ∆VOSC
5
4
L
------------------------------------ --
----------------------------------------------------------
RF
=
⋅
⋅ ω ⋅
T
VIN
N ⋅ (RDROOP + ESR)
L
---
CO
⋅
N
CF = -----------------------
RF
Moreover, it is suggested to filter the high frequency ripple on the COMP pin adding also a
capacitor between COMP pin and FB pin (it does not change the system bandwidth:
1
CP = ----------------------------------------------------------
2 ⋅ π ⋅ RF ⋅ N ⋅ FSW
53/64
Thermal monitor
L6713A
22
Thermal monitor
L6713A continuously senses the system temperature through TM pin: depending on the
voltage sensed by this pin, the device sets free the VR_FAN pin as a warning and, after
further temperature increase, also the VR_HOT pin as an alarm condition.
These signals can be used to give a boost to the system fan (VR_FAN) and improve the VR
cooling, or to initiate the CPU low power state (VR_HOT) in order to reduce the current
demand from the processor so reducing also the VR temperature. In a different manner,
VR_FAN can be used to initiate the CPU low power state so reducing the processor current
requirements and VR_HOT to reset the system in case of further dangerous temperature
increase.
Thermal sensors is external to the PWM control IC since the controller is normally not
located near the heat generating components: it is basically composed by a NTC resistor
and a proper biasing resistor RTM. NTC must be connected as close as possible at the
system hot-spot in order to be sure to control the hottest point of the VR.
Typical connection is reported in Figure 27 that also shows how the trip point can be easily
programmed by modifying the divider values in order to cross the VR_FAN and VR_HOT
thresholds at the desired temperatures.
Both VR_HOT and VR_FAN are active high and open drain outputs. Thermal Monitor
function is enabled if V >>UVLO
.
CC
VCC
Figure 27. System thermal monitor typical connections.
TM Voltage - NTC=3300/4250K
4.00
3.80
3.60
3.40
3.20
3.00
2.80
2.60
2.40
2.20
2.00
+5V
Sense Element
(Place remotely, near Hot Spot)
TM
Rtm = 330
Rtm = 390
Rtm = 470
RTM
80
85
90
95
100
105
110
115
120
Temperature [degC]
54/64
L6713A
Tolerance band (TOB) definition
23
Tolerance band (TOB) definition
Output voltage load-line varies considering component process variation, system
temperature extremes, and age degradation limits. Moreover, individual tolerance of the
components also varies among designs: it is then possible to define a Manufacturing
Tolerance Band (TOBManuf) that defines the possible output voltage spread across the
nominal load line characteristic.
TOBManuf can be sliced into different three main categories: Controller Tolerance, External
Current Sense Circuit Tolerance and Time Constant Matching Error Tolerance. All these
parameters can be composed thanks to the RSS analysis so that the manufacturing
variation on TOB results to be:
TOBManuf
=
TOB2Controller + TOB2CurrSense + TOBT2CMatching
Output voltage ripple (VP=VPP/2) and temperature measurement error (VTC) must be added
to the Manufacturing TOB in order to get the system Tolerance Band as follow:
TOB = TOBManuf + VP + VTC
All the component spreads and variations are usually considered at 3σ. Here follows an
explanation on how to calculate these parameters for a reference L6713A application.
23.1
Controller tolerance (TOBController)
It can be further sliced as follow:
●
Reference tolerance. L6713A is trimmed during the production stage to ensure the
output voltage to be within kVID = 0.5% ( 0.6% for AMD DAC) over temperature and
line variations. In addition, the device automatically adds a -19mV offset (Only for Intel
Mode) avoiding the use of any external component. This offset is already included
during the trimming process in order to avoid the use of any external circuit to generate
this offsets and, moreover, avoiding the introduction of any further error to be
considered in the TOB calculation.
●
Current Reading Circuit. The device reads the current flowing across the inductor DCR
by using its dedicated differential inputs. The current sourced by the VRD is then
reproduced and sourced from the DROOP pin scaled down by a proper designed gain
as follow:
DCR
-------------
⋅ IOUT
IDROOP
=
Rg
This current multiplied by the RFB resistor connected from FB pin vs. the load allows
programming the droop function according to the selected DCR/Rg gain and RFB
resistor. Deviations in the current sourced due to errors in the current reading, impacts
on the output voltage depending on the size of RFB resistor. The device is trimmed
during the production stage in order to guarantee a maximum deviation of kIFB = 1µA
from the nominal value.
Controller tolerance results then to be:
TOBController
[(VID – 19mV) ⋅ kVID]2 + (kIDROOP ⋅ RFB
2
=
)
55/64
Tolerance band (TOB) definition
L6713A
23.2
Ext. current sense circuit tolerance (TOBCurrSense)
It can be further sliced as follow:
●
Inductor DCR Tolerance (kDCR). Variations in the inductor DCR impacts on the output
voltage since the device reads a current that is different from the real current flowing
into the sense element. As a results, the controller will source a IDROOP current different
from the nominal. The results will be an AVP different from the nominal in the same
percentage as the DCR is different from the nominal. Since all the sense elements
results to be in parallel, the error related to the inductor DCR has to be divided by the
number of phases (N).
●
Trans-conductance resistors tolerance (kRg). Variations in the Rg resistors impacts in
the current reading circuit gain and so impacts on the output voltage. The results will be
an AVP different from the nominal in the same percentage as the Rg is different from
the nominal. Since all the sense elements results to be in parallel, and so the three
current reading circuits, the error related to the Rg resistors has to be divided by the
number of phases (N).
●
●
NTC Initial Accuracy (kNTC_0). Variations in the NTC nominal value at room
temperature used for the thermal compensation impacts on the AVP in the same
percentage as before. In addition, the benefit of the division by the number of phases N
cannot be applied in this case.
NTC Temperature Accuracy (kNTC). NTC variations from room to hot also impacts on
the output voltage positioning. The impact is bigger as big is the temperature variation
from room to hot (∆T).
All these parameters impacts the AVP, so they must be weighted on the maximum voltage
swing from zero load up to the maximum electrical current (VAVP). Total error from external
current sense circuit results:
kD2 CR k2Rg
2
α ⋅ ∆T ⋅ kNTC
TOBCurrSense
=
V2AVP
⋅
------------- + -------- + kN2 TC0
+
⎛
⎝
⎞
⎠
--------------------------------------
DCR
N
N
23.3
Time constant matching error tolerance (TOBTCMatching)
●
Inductance and capacitance Tolerance (kL, kC). Variations in the inductance value and
in the value of the capacitor used for the Time Constant Matching causes over/under
shoots after a load transient appliance. This impacts the output voltage and then the
TOB. Since all the sense elements results to be in parallel, the error related to the time
constant mismatch has to be divided by the number of phases (N).
●
Capacitance Temperature Variations (kCt). The capacitor used for time constant
matching also vary with temperature (∆TC) impacting on the output voltage transients
ad before. Since all the sense elements results to be in parallel, the error related to the
time constant mismatch has to be divided by the number of phases (N).
All these parameters impact the Dynamic AVP, so they must be weighted on the maximum
dynamic voltage swing (Idyn). Total error due to time constant mismatch results:
kL2 + k2C + (kCt ⋅ ∆TC)2
TOBTCMatching
=
V2AVPDyn
⋅
------------------------------------------------------------
N
56/64
L6713A
Tolerance band (TOB) definition
23.4
Temperature measurement error (VTC)
Error in the measured temperature (for thermal compensation) impacts on the output
regulated voltage since the correction form the compensation circuit is not what required to
keep the output voltage flat.
The measurement error (εTemp) must be multiplied by the copper temp coefficient (α) and
compared with the sensing resistance (RSENSE): this percentage affects the AVP voltage as
follow:
α ⋅ εTemp
RSENSE
--------------------------
⋅ VAVP
VTC
=
57/64
Layout guidelines
L6713A
24
Layout guidelines
Since the device manages control functions and high-current drivers, layout is one of the
most important things to consider when designing such high current applications. A good
layout solution can generate a benefit in lowering power dissipation on the power paths,
reducing radiation and a proper connection between signal and power ground can optimize
the performance of the control loops.
Two kind of critical components and connections have to be considered when layouting a
VRM based on L6713A: power components and connections and small signal components
connections.
24.1
Power components and connections
These are the components and connections where switching and high continuous current
flows from the input to the load. The first priority when placing components has to be
reserved to this power section, minimizing the length of each connection and loop as much
as possible. To minimize noise and voltage spikes (EMI and losses) these interconnections
must be a part of a power plane and anyway realized by wide and thick copper traces: loop
must be anyway minimized. The critical components, i.e. the power transistors, must be
close one to the other. The use of multi-layer printed circuit board is recommended.
Figure 28 shows the details of the power connections involved and the current loops. The
input capacitance (CIN), or at least a portion of the total capacitance needed, has to be
placed close to the power section in order to eliminate the stray inductance generated by
the copper traces. Low ESR and ESL capacitors are preferred, MLCC are suggested to be
connected near the HS drain.
Use proper VIAs number when power traces have to move between different planes on the
PCB in order to reduce both parasitic resistance and inductance. Moreover, reproducing the
same high-current trace on more than one PCB layer will reduce the parasitic resistance
associated to that connection.
Connect output bulk capacitor as near as possible to the load, minimizing parasitic
inductance and resistance associated to the copper trace also adding extra decoupling
capacitors along the way to the load when this results in being far from the bulk capacitor
bank.
Gate traces must be sized according to the driver RMS current delivered to the power
MOSFET. The device robustness allows managing applications with the power section far
from the controller without losing performances. External gate resistors help the device to
dissipate power resulting in a general cooling of the device. When driving multiple
MOSFETs in parallel, it is suggested to use one resistor for each MOSFET.
58/64
L6713A
Layout guidelines
24.2
Small signal components and connections
These are small signal components and connections to critical nodes of the application as
well as bypass capacitors for the device supply (See Figure 28). Locate the bypass
capacitor (VCC, VCCDRx and Bootstrap capacitor) close to the device and refer sensible
components such as frequency set-up resistor ROSC, over current resistor ROCP and OVP
resistor ROVP to SGND. Star grounding is suggested: connect SGND to PGND plane in a
single point to avoid that drops due to the high current delivered causes errors in the device
behavior.
Warning: Boot Capacitor Extra Charge. Systems that do not use
Schottky diodes might show big negative spikes on the
phase pin. This spike can be limited as well as the positive
spike but has an additional consequence: it causes the
bootstrap capacitor to be over-charged. This extra-charge
can cause, in the worst case condition of maximum input
voltage and during particular transients, that boot-to-phase
voltage overcomes the abs. max. ratings also causing device
failures. It is then suggested in this cases to limit this extra-
charge by adding a small resistor in series to the boot diode
(one resistor can be enough for all the three diodes if placed
upstream the diode anode, See Figure 28) and by using
standard and low-capacitive diodes.
Figure 28. Power connections and related connections layout (same for all phases).
To limit CBOOT Extra-Charge
VIN
VIN
BOOTx
UGATEx
PHASEx
CIN
CIN
L
PHASEx
VCC
L
LGATEx
PGNDx
LOAD
LOAD
SGND
+Vcc
Remote Sensing Connection must be routed as parallel nets from the FB/VSEN pins to the
load in order to avoid the pick-up of any common mode noise. Connecting these pins in
points far from the load will cause a non-optimum load regulation, increasing output
tolerance.
Locate current reading components close to the device. The PCB traces connecting the
reading point must use dedicated nets, routed as parallel traces in order to avoid the pick-up
of any common mode noise. It's also important to avoid any offset in the measurement and,
to get a better precision, to connect the traces as close as possible to the sensing elements.
Symmetrical layout is also suggested. Small filtering capacitor can be added, near the
controller, between VOUT and SGND, on the CSx- line to allow higher layout flexibility.
59/64
Embedding L6713A - based VR
L6713A
25
Embedding L6713A - based VR
When embedding the VRD into the application, additional care must be taken since the
whole VRD is a switching DC/DC regulator and the most common system in which it has to
work is a digital system such as MB or similar. In fact, latest MB has become faster and
powerful: high speed data bus are more and more common and switching-induced noise
produced by the VRD can affect data integrity if not following additional layout guidelines.
Few easy points must be considered mainly when routing traces in which high switching
currents flow (high switching currents cause voltage spikes across the stray inductance of
the trace causing noise that can affect the near traces):
Keep safe guarding distance between high current switching VRD traces and data buses,
especially if high-speed data bus to minimize noise coupling.
Keep safe guard distance or filter properly when routing bias traces for I/O sub-systems that
must walk near the VRD.
Possible causes of noise can be located in the PHASE connections, MOSFET gate drive
and Input voltage path (from input bulk capacitors and HS drain). Also PGND connections
must be considered if not insisting on a power ground plane. These connections must be
carefully kept far away from noise-sensitive data bus.
Since the generated noise is mainly due to the switching activity of the VRM, noise
emissions depend on how fast the current switches. To reduce noise emission levels, it is
also possible, in addition to the previous guidelines, to reduce the current slope by properly
tuning the HS gate resistor and the PHASE snubber network.
60/64
L6713A
Mechanical data
26
Mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
61/64
Mechanical data
L6713A
Table 14. TQFP64 Mechanical Data
mm.
inch
Typ.
Dim.
Min.
Typ.
Max.
Min.
Max.
A
A1
A2
b
1.20
0.15
1.05
0.27
0.20
12.20
10.20
6.10
0.0472
0.006
0.05
0.95
0.17
0.09
11.80
9.80
3.50
0.002
0.0374
0.0066
0.0035
0.464
1.00
0.22
0.0393
0.0086
0.0413
0.0086
0.0078
0.480
c
D
12.00
10.00
0.472
0.394
D1
D2
D3
E
0.386
0.401
0.1378
0.2402
7.50
12.00
10.00
0.295
0.472
0.394
11.80
9.80
3.50
12.20
10.20
6.10
0.464
0.386
0.480
0.401
E1
E2
E3
e
0.1378
0.2402
7.50
0.50
0.60
1.00
3.5°
0.295
0.0197
0.0236
0.0393
3.5°
L
0.45
0°
0.75
0.0177
0°
0.0295
L1
k
7 °
7°
ccc
0.080
0.0031
Figure 29. Package Dimensions
62/64
L6713A
Revision history
27
Revision history
Table 15. Revision history
Date
Revision
Changes
03-Mar-2006
1
Initial release.
Updated D2 and E2 exposed tab measures in Table 14: TQFP64
Mechanical Data
07-Nov-2006
2
63/64
L6713A
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