RFM210LW-433S1 [HOPERF]
Wireless applications;
| 型号： | RFM210LW-433S1 |
| 厂家： | 
HOPERF |
| 描述： | Wireless applications 无线 |
| 文件： | 总17页 (文件大小：1092K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFM210LW
Features
Frequency Range: 315 /433.92 MHz
Symbol Rate: 0.1 to 3.4 kbps
Sensitivity: -108dBm at 2.4 kbps, 0.1% BER
Receiver Bandwidth: 200 kHz
Image Rejection Ratio: 25 dB
Large Signal Handling:10 dBm
Supply Voltage: 1.8 to 3.6 V
Low Power Consumption: 3.8 Ma
3.3 mA @ 315 MHz
3.8 mA @ 433.92 MHz
Low Sleep Current
RoHS Compliant
Module Size:32*11*5.0mm
RFM210LW
Descriptions
Applications
The RFM210LW is an ultra low-cost, low power,
high performance OOK stand-alone RF receiver for
315/433.92MHz wireless applications. It is part of
the CMOSTEK NextGenRFTM family, which
includes a complete line of transmitters, receivers
and transceivers. The RFM210LW is a true plug-
and- run device, no register configuration and
manually- tune is required. The RFM210LW
operates from
z
z
z
Low-Cost Consumer Electronics Applications
Home and Building Automation
Infrared Receiver Replacements
z
Industrial Monitoring and Controls
Remote Automated Meter Reading
Remote LightingControl System
Wireless Alarm and Security Systems
Remote Keyless Entry (RKE)
z
z
z
z
1.8
V
to3.6 V, finely work till the end of most
batteries’ power. It consumes 3.3 mA current while
achieving -109 dBm receiving sensitivity at 315
MHz
and
consumes 3.8 mA current while
achieving -108 dBm receiving sensitivity at433.92
MHz.
Rev 1.0 | Page 1 / 17
RFM210LW
Abbreviations
Abbreviations used in this data sheet are described below
AGC
AN
Automatic Gain Control
Application Notes
Bit Error Rate
PC
Personal Computer
PCB
PLL
PN9
POR
PUP
QFN
Printed Circuit Board
Phase Lock Loop
BER
BOM
BSC
BW
Bill of Materials
Pseudorandom Noise 9
Power On Reset
Basic Spacing between Centers
Bandwidth
Power Up
Direct Current
Quad Flat No-lead
DC
EEPROM Electrically
Erasable
Programmable RF
Radio Frequency
Read-Only Memory
RF Products Development Kit
Restriction of Hazardous Substances
Received Signal Strength Indicator
Receiving, Receiver
Successive Approximation Register
Serial Port Interface
Threshold
RFPDK
RoHS
RSSI
Rx
ESD
ESR
Ext
Electro-Static Discharge
Equivalent Series Resistance
Extended
IF
Intermediate Frequency
Low Noise Amplifier
Local Oscillator
SAR
SPI
LNA
LO
TH
LPOSC
Max
MCU
Min
Low Power Oscillator
Maximum
Tx
Transmission, Transmitter
Typical
Typ
Microcontroller Unit
Minimum
USB
VCO
WOR
XOSC
Universal Serial Bus
Voltage Controlled Oscillator
Wake On Radio
MOQ
NP0
NC
Minimum Order Quantity
Negative-Positive-Zero
Not Connected
Crystal Oscillator
XTAL/Xtal Crystal
OOK
On-Off Keying
Rev 1.0 | Page 2 / 17
RFM210LW
Table of Contents
1. Electrical Characteristics .................................................................................................................................4
1.1 Recommended Operation Conditions....................................................................................................4
1.2 Absolute Maximum Ratings ...................................................................................................................4
1.3 Receiver Specifications..........................................................................................................................5
1.4 Crystal Oscillator ....................................................................................................................................6
1.5 LPOSC ...................................................................................................................................................6
2. Pin Descriptions .................................................................................................................................................7
3. Typical Performance Characteristics .............................................................................................................8
4. Typical Application Schematic ......................................................................................................................9
5. Functional Descriptions..................................................................................................................................10
5.1 Overview ..............................................................................................................................................10
5.2 Modulation, Frequency and Symbol Rate............................................................................................10
5.3 Main Configration.......................................................................................................11
5.4 Internal Blocks Description ..................................................................................................................12
5.4.1 RF Front-end and AGC................................................................................................................ 12
5.4.2 IF Filter........................................................................................................................................ 12
5.4.3 RSSI ........................................................................................................................................... 12
5.4.4 SAR ADC ..................................................................................................................................... 12
5.4.5 Crystal Oscillator ......................................................................................................................... 12
5.4.6 Frequency Synthesizer ............................................................................................................... 12
5.7.7 LPOSC........................................................................................................................................ 12
5.5 Operation States ...................................................................................................................................13
5.6Dutycycle receive mode..........................................................................................................................14
6. Ordering Information .......................................................................................................................................15
7. Package Outline ...............................................................................................................................................16
8. Contact Information ..........................................................................................................................................17
Rev 1.0 | Page 3 / 17
RFM210LW
1. Electrical Characteristics
VDD = 3.3 V, TOP = 25 ℃, FRF = 433.92 MHz, sensitivities are measured in receiving a PN9 sequence and matching
to 50 Ω impedance, with the BER of 0.1%. All measurements are performed using the board RFM210LW-EM V1.0,
unless otherwise noted.
1.1 Recommended Operation Conditions
1.2 Absolute Maximum Ratings
Table 3. Absolute Maximum Ratings[1]
Parameter
Supply Voltage
Symbol
VDD
Condi
ti
ons
Min
-0.3
Max
3.6
Unit
V
InterfaceVoltage
VIN
-0.3
-40
-50
VDD + 0.3
125
V
Junction Temperature
Storage Temperature
Soldering Temperature
ESD Rating[2]
TJ
℃
℃
TSTG
TSDR
150
Lasts at least 30 seconds
Human Body Model (HBM)
255
℃
-2
2
kV
Latch-up Current
-100
100
mA
@ 85
℃
Notes:
[1]. Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device under these conditions is not implied.
Exposure to maximum rating conditions for extended periods may affect device reliability.
[2]. The RFM210LW is high-performance RF integrated circuits with VCON/P pins having an ESD rating < 2
kV HBM. Handling and assembly of this device should only be done at ESD-protected workstations.
Caution! ESD sensitive device. Precaution should be used when
handling the device in order to prevent permanent damage.
Rev 1.0 | Page 4 / 17
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RFM210LW
1.3 Receiver Specifications
Table 4. Receiver Specifications
Condi ons
Parameter
Frequency Range
Symbol Rate
Symbol
FRF
ti
Min
300
0.1
Typ
Max
480
3.4
Unit
MHz
kbps
SR
FRF = 315 MHz, SR = 2.4 kbps, BER =
S315
S433.92
PLVL
-109
-108
10
dBm
dBm
dBm
0.1%
Sensitivity
FRF = 433.92 MHz, SR = 1 kbps, BER =
0.1%
Saturation Input Signal
Level
FRF = 315 MHz
3.5
3.8
60
mA
mA
nA
Working Current
Sleep Current
IDD
FRF = 433.92 MHz
When sleep timer is off
ISLEEP
Frequency Resolution
Frequency Synthesizer
Settle Time
FRES
24.8
150
Hz
us
TLOCK
From XOSC settled
SR = 1 kbps, ±1 MHz offset, CW
interference
52
74
dB
dB
SR = 1 kbps, ±2 MHz offset, CW
interference
BlockingImmunity
BI
SR = 1 kbps, ±10 MHz offset, CW
interference
75
35
dB
dB
Image Rejection Ratio
IMR
IIP3
IF = 280 kHz
Two tone test at 1 MHz and 2 MHz
offset frequency. Maximum system
gain settings
Input 3rd Order Intercept
Point
-25
dBm
Receiver Bandwidth
BW
kHz
ms
200
From power up to receive
Receiver Start-up Time
TSTART-UP
7.3
Rev 1.0 | Page 5 / 17
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RFM210LW
1.4 Crystal Oscillator
Parameter
Symbol
FXTAL315
Conditions
FRF = 315 MHz
FRF = 433.92 MHz
Min
Typ
Max
Unit
18.8744
MHz
Crystal Frequency[1]
FXTAL433.92
26
MHz
ppm
Crystal Tolerance[2]
Load Capacitance
±20
10
15
20
60
pF
Ω
CLOAD
Rm
Crystal ESR
Drive Level
100
uw
Aging Per Year
ppm
us
±
2
XTAL Startup Time[3]
400
tXTAL
Notes:
[1]. The RFM210LW can directly work with external reference clock input to XIN pin (a coupling capacitor is required)
with peak-to-peak amplitude of 0.3 to 0.7 V.
[2]. This is the total tolerance including (1) initial tolerance, (2) crystal loading, (3) aging, and (4) temperature dependence.
The acceptable crystal tolerance depends on RF frequency and channel spacing/bandwidth.
[3]. This parameter is to a large degree crystal dependent.
Rev 1.0 | Page 6 / 17
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RFM210LW
2. Pin Descriptions
Figure 2. Pin Diagram
Table 6. RFM210LW Pin Descriptions
Pin Number
Name
I/O
Descriptions
I
Ground
1
GND
O
I
Received data output
Power supply input
2
3
DATA
VDD
I
3-wire SPI clock input for EEPROM programming
4
5
C
LK
3-wire SPI data input and output for EEPROM
programming
I/O
I
S
DA
3-wire SPI chip select input for EEPROM
programming I
6
7
C
SB
I
I
I
GND
ANT
GND
Ground
RF signal input to the LNA
8
9
G
round
round
10
I
GND
G
Rev 1.0 | Page 7 / 17
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RFM210LW
3. Typical Performance Characteristics
Current vs. Supply Voltage
Current vs. Temperature
3.90
4.8
4.6
3.80
3.70
3.60
3.50
3.40
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
3.3
1.8
3.6
V
V
V
433.92 MHz
3.20
315 MHz
3.10
-50
-30
-10
10
30
50
70
90
110
1.80
2.05
2.30
2.55
2.80
3.05
3.30
3.55
3.80
Temperature
(℃)
Supply Voltage (
V
)
Figure 3.1 Current vs. Voltage, FRF = 315
433.92 MHz, SR = 1 kbps
/
Figure 3.2 Current vs. Temperature, FRF
433.92 MHz, SR = 1 kbps
=
Sensitivity vs. Supply Voltage
Sensitivity vs. Temperature
-112.2
-112.6
-113.0
-113.4
-113.8
-114.2
-114.6
-115.0
-110.4
-111.2
-112.0
-112.8
-113.6
-114.4
-115.2
-116.0
433.92MHz
315 MHz
1.6
1.9
2.2
2.5
2.8
3.1
3.4
3.7
4.0
-40
-20
0
20
40
60
80
100
Supply Voltage (V)
Temperature (℃)
Figure 3.3 Sensitivity vs. Supply Voltage,
SR = 1 kbps, BER = 0.1%
Figure 3.4 Sensitivity vs. Temperature, FRF
=
433.92
MHz, VDD = 3.3 V, SR = 1 kbps, BER = 0.1%
Sensitivity vs. BER
Sensitivity vs. Symbol Rate
-112.5
-101
-113.0
-113.5
-114.0
-114.5
-115.0
-115.5
-116.0
-116.5
-103
-105
-107
-109
-111
-113
-115
0
4
8
12
16
20
24
s)
28
32
36
40
0.01%
0.10%
1.00%
10.00%
Symbol Rate (kb
p
BER
Figure 3.5 Sensitivity vs. SR, FRF
=
433.92
Figure 3.6 Sensitivity vs. BER, FRF
= 433.92
MHz, VDD = 3.3 V, BER = 0.1%
MHz, VDD = 3.3 V, SR = 1 kbps
Rev 1.0 | Page 8 / 17
RFM210LW
Figure 9: Typical Application Schematic
Rev 1.0 | Page 9 / 17
RFM210LW
5. Functional Descriptions
AGC
I-LMT
I-MXR
OOK
CSB
DEMOD
Image
RFI
Rejection
Band-pass
Filter
Radio
Controller
LNA
RSSI
SAR
3-wire SPI
SCL
SDA
GND
AFC & AGC
Q-MXR
Q-LMT
VCO
26 MHz
Loop
Filter
LO GEN
PFD/CP
EEPROM
LDOs
Bandgap
POR
CLKO
DOUT
DIVIDER
LPOSC
XOSC
VDD
GND
AFC & Σ-Δ Modulator
XIN XOUT
VCON VCOP
nRSTO
Figure 5. Functional Block Diagram
5.1 Overview
The RFM210LW is an ultra low power, high performance, low-cost OOK stand-alone RF receiver for various 300 /
480 MHz wireless applications. It is part of the CMOSTEK NextGenRFTM family, which includes a complete line of
transmitters, receivers and transceivers. The chip is based on a fully integrated, low-IF receiverarchitecture. The
low-IF architecture facilitates a very low external component count and does not suffer from powerline - induced
interference problems. The synthesizer contains a VCO and a low noise fractional-N PLL with an output frequency
resolution of 24.8 Hz. The VCO operates at 2x the Local Oscillator (LO) frequency to reduce spurious emissions.
Every analog block is calibrated on each Power-on Reset (POR) to the internal reference voltage. The calibration
helps the device to finely work under different temperatures and supply voltages. The baseband filtering and
demodulation is done by the digital demodulator. The demodulated signal is output to the external MCU via the
DOUT pin. No external MCU control is needed in the applications.
The 3-wire SPI interface is only used for configuring the device. The configuration can be done with the RFPDK and
the USB Programmer. The RF Frequency, symbol rate and other product features are all configurable. This saves
the cost and simplifies the design, developmentand manufacture. Alternatively, in stock products of 315/433.92
MHz are available for immediate demands with no need of EEPROM programming. The RFM210LW operates from
1.8 to 3.6 V so that it can finely work with most batteries to their useful power limits. The receive current is only 3.8
mA. The RFM210LW receiver together with the CMT211x transmitter enables an ultra low cost RF link.
5.2 Modulation, Frequency and Symbol Rate
The RFM210LW supports OOK demodulation with the symbol rate from 0.1 to 40 kbps. It continuously covers the
frequency range from 300 to 480 MHz, including the license free ISM frequency band around 315 MHz and 433.92
MHz. The internal frequency synthesizer contains a high-purity VCO and a low noise fractional-N PLL with an
output frequency resolution of 24.8 Hz. See Table 9 for the demodulation, frequency and symbol rate information.
Rev 1.0 | Page 10 / 17
RFM210LW
Table 7. Modulation, Frequency and Symbol Rate
Parameter
Demodulation
Value
OOK
U
ni
t
-
Frequency
300 to 480
24.8
MHz
Hz
Frequency Resolution
Symbol Rate
0.1 to 3.4
kbps
5.3 Main Configurations
Unlike other NextGenRFTM receivers, the RFM210LW does not need any register control or manufacturing programming. The
configuration of the device is fixed in order to save the development effort, reduce system cost and simplify the manufacturing
process. The main configurations are listed in the table below. Please note that if more flexibility is needed in the system, the user
can use other NextGenRFTM receivers like CMT2210A and etc. For those products, an embedded EEPROM is available on chip
for the user to configure all the product features.
5.4 Internal Blocks Description
5.4.1 RF Front-end and AGC
The RFM210LW features a low-IF receiver. The RF front-end of the receiver consists of a Low Noise Amplifier (LNA), I/Q
mixer and a wide-band power detector. Only a low-cost inductor and a capacitor are required for matching the LNA to any 50
Ω antennas. The input RF signal induced on the antenna is amplified and down-converted to the IF frequency for further
processing.
By means of the wide-band power detector and the attenuation networks built around the LNA, the Automatic Gain Control (AGC)
loop regulates the RF front-end’s gain to get the best system linearity, selectivity and sensitivity performance, even though the
receiver suffers from strong out-of-band interference.
5.4.2 IF Filter
The signals coming from the RF front-end are filtered by the fully integrated 3rd-order band-pass image rejection IF filter which
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Rev 1.0 | Page 11 / 17
RFM210LW
achieves over 25 dB image rejection ratio typically. The IF center frequency is dynamically adjusted to enable the IF filter to
locate to the right frequency band, thus the receiver sensitivity and out-of-band interference attenuation performance are kept
optimal despite the manufacturing process tolerances. The IF bandwidth is fixed at 200 kHz.
5.4.3 RSSI
The subsequent multistage I/Q Log amplifiers enhance the output signal from IF filter before it is fed for demodulation. Receive
Signal Strength Indicator (RSSI) generators are included in both Log amplifiers which produce DC voltages that are directly
proportional to the input signal level in both of I and Q path. The resulting RSSI is a sum of both these two paths. Extending from
the nominal sensitivity level, the RSSI achieves dynamic range over 66 dB.
The RFM210LW integrates a patented DC-offset cancellation engine. The receiver sensitivity performance benefits a lot from
the novel, fast and accurate DC-offset removal implementation.
5.4.4 SAR ADC
The on-chip 8-bit SAR ADC digitalizes the RSSI for OOK demodulation.
5.4.5 Crystal Oscillator
The crystal oscillator is used as the reference clock for the PLL frequency synthesizer and system clock for the digital blocks. A
crystal should be used with appropriate loading capacitors (C2 and C3 in Figure 9 of Page 9). The values of the loading
capacitors depend on the total load capacitance CL specified for the crystal. The total load capacitance seen between the XIN
and XOUT pin should equal CL for the crystal to oscillate at desired frequency.
1
CL
=
+ Cparasitic
1
C
1
C
3
+
2
The parasitic capacitance is constituted by the input capacitance and PCB tray capacitance. The ESR of the crystal should be
within the specification in order to ensure a reliable start-up. An external signal source can easily be used in place of a
conventional XTAL and should be connected to the XIN pin. The incoming clock signal is recommended to have a peak-to-peak
swing in the range of 300 mV to 700 mV and AC-coupled to the XIN pin.
5.4.6 Frequency Synthesizer
A fractional-N frequency synthesizer is used to generate the LO frequency for the down conversion I/Q mixer. The frequency
synthesizer is fully integrated except the VCO tank inductor which enables the ultra low-power receiver system design. Using the
26 MHz reference clock provided by the crystal oscillator or the external clock source, it can generate receive frequencies of 315
and 433.92 MHz with a frequency resolution of 24.8 Hz.
The VCO always operates at 2x of LO frequency. A high Q (at VCO frequency) tank inductor should be chosen to ensure the
VCO oscillates at any conditions meanwhile burns less power and gets better phase noise performance. In addition, properly
layout the inductor matters a lot of achieving a good phase noise performance and less spurious emission. The recommended
VCO inductors for different LO frequency bands are shown as bellow.
Table 9. VCO Inductor for 315/433.92 MHz Frequency Band
LO Frequency Band (MHz)
VCO Inductor (nH)
315
433.92
33
22
Multiple subsystem calibrations are performed dynamically to ensure the frequency synthesizer operates reliably in any
working condition
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Rev 1.0 | Page 12 / 17
RFM210LW
5.5 Operation States
As the RFM210LW is operating in duty cycle receiving mode,the device will go through the states shown as
the figure below after the power up.
Power Up (PUP) State
Once the device is powered up, the device will go through the Power Up (PUP) sequence which includes the task of releasing the
Power-On Reset (POR), turning on the crystal and calibrating the internal blocks. The PUP takes about 4 ms to finish in the
always receive mode. The average current of the PUP sequence is about 0.9 mA.
SLEEP State
In this state, all the internal blocks are powered down except the sleep timer. The sleep time is fixed at 3 ms. The sleep current is
about 60 nA.
XTAL State
Once the device wakes up from the SLEEP State, the crystal oscillator restarts to work. The current consumption in this state is
about 520 uA.
TUNE State
The device is tuned to the desired frequency and ready to receive. It usually takes approximately 300 us to complete the tuning
sequence. The current consumption in this state is about 2 mA.
RX State
The device receives the incoming signals and outputs the demodulated data on the DOUT pin. The current in this state is about
3.3 mA (315 MHz) or 3.8 mA (433.92 MHz).
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Rev 1.0 | Page 13 / 17
RFM210LW
5.6 Duty Cycle Receive Mode
In the duty-cycle mode, after the PUP the device will automatically repeat the sequence of SLEEP, XTAL, TUNE and RX until the
device is powered down. This allows the device to re-tune the synthesizer regularly to adept to the changeable environment and
therefore remain its highest performance. The device will continuously receive any incoming signals during the RX state and
send out the demodulated data on the DOUT pin. The PUP sequence consumes about 4 ms. See the figure below for the timing
and current consumption of the duty cycle receive mode
The advantages of the duty-cycle receive mode are listed below.
Maintaining the highest performance of the device by regular frequency re-tune.
Increasing the system stability by regular sleep (resetting most of the blocks).
If more current saving is required in the application, or other parameter need to be configured, the user can also use CMT2210A
or other NextGenRFTM receivers with embedded EEPROM built-in and all product features configurable. For the more details,
please refer to the “AN108 CMT2210A Configuration Guideline”.
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Rev 1.0 | Page 14 / 17
RFM210LW
6. Ordering Information
RFM210LW-433 S1
Package
Operation Band
Mode Type
P/N: RFM210LW-315S1
RFM210LW module at 315MHz band,SMD Package
P/N: RFM210LW-433S1
RFM210LW module at 433MHz band,SMD Package
Rev 1.0 | Page 15 / 17
RFM210LW
7. Package Outline
Figure 13
S1 Package Outline Drawi
Rev 1.0 | Page 16 / 17
RFM210LW
8. Contact Informatio
n
HOPE MICROELECTRONICS CO.,LTD
Add: 2/F, Building 3, Pingshan Private Enterprise Science and Technology Park, Lishan Road, XiLi Town, Nanshan
District, Shenzhen, Guangdong, China
Tel: 86-755-82973805
Fax: 86-755-82973550
Email: sales@hoperf.com
Website: http://www.hoperf.com
http://www.hoperf.cn
This document may contain preliminary information and is subject to
change by Hope Microelectronics without notice. Hope Microelectronics
assumes no responsibility or liability for any use of the information
contained herein. Nothing in this document shall operate as an express or
implied license or indemnity under the intellectual property rights of Hope
Microelectronics or third parties. The products described in this document
are not intended for use in implantationor other direct life support
applications where malfunctionmay result in the direct physical harm or
injury to persons. NO WARRANTIES OF ANY KIND, INCLUDING, BUT
NOT LIMITED TO, THE IMPLIED WARRANTIES OF MECHANTABILITY
OR FITNESS FOR A ARTICULARPURPOSE, ARE OFFERED IN THIS
DOCUMENT.
HOPE MICROELECTRONICS CO.,LTD Add:
2/F, Building 3, Pingshan Private
Enterprise Science and Technology
Park, Lishan Road, XiLi Town, Nanshan
District, Shenzhen, Guangdong, China
Tel: 86-755-82973805
Fax: 86-755-82973550
Email: sales@hoperf.com
Website: http://www.hoperf.com
http://www.hoperf.cn
©2006, HOPE MICROELECTRONICS CO.,LTD. All rights reserved.
Rev 1.0 | Page 17 / 17
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