ATF501P8_技术文档

Agilent ATF-501P8 High Linearity

Enhancement Mode^[1]

Pseudomorphic HEMT in

2x2 mm²LPCC^[3]Package

Data Sheet

Features

• Single voltage operation

• High Linearity and P1dB

• Low Noise Figure

• Excellent uniformity in product

specifications

Pin Connections and

Package Marking

Description

Agilent Technologies’s ATF-

501P8 is a single-voltage high

linearity, low noise E-pHEMT

housed in an 8-lead JEDEC-

standard leadless plastic chip

carrier (LPCC^[3]) package. The

device is ideal as a medium-

power amplifier. Its operating

frequency range is from 400 MHz

to 3.9 GHz.

• Small package size: 2.0 x 2.0 x

0.75 mm³

Pin 8

Pin 7 (Drain)

Pin 6

Pin 1 (Source)

Pin 2 (Gate)

Pin 3

• Point MTTF > 300 years^[2]

• MSL-1 and lead-free

• Tape-and-Reel packaging option

available

Pin 5

Pin 4 (Source)

Bottom View

Specifications

• 2 GHz; 4.5V, 280 mA (Typ.)

Pin 1 (Source)

Pin 8

The thermally efficient package

measures only 2mm x 2mm x

0.75mm. Its backside

metalization provides excellent

thermal dissipation as well as

visual evidence of solder reflow.

The device has a Point MTTF of

over 300 years at a mounting

temperature of +85ºC. All devices

are 100% RF & DC tested.

• 45.5 dBm Output IP3

Pin 2 (Gate)

Pin 3

Pin 7 (Drain)

Pin 6

• 29 dBm Output Power at 1dB gain

compression

0Px

• 1 dB Noise Figure

• 15 dB Gain

• 14.5 dB LFOM^[4]

Pin 4 (Source)

Pin 5

Top View

Note:

Package marking provides orientation and

identification:

• 65% PAE

• 23^oC/W thermal resistance

“0P” = Device Code

“x” = Date code indicates the month of

manufacture.

Notes:

Applications

1. Enhancement mode technology employs a

single positive V_gs, eliminating the need of

negative gate voltage associated with

conventional depletion mode devices.

• Front-end LNA Q2 and Q3, Driver or

Pre-driver Amplifier for Cellular/

PCS and WCDMA wireless

infrastructure

2. Refer to reliability datasheet for detailed

MTTF data.

Attention:

• Driver Amplifier for WLAN, WLL/

RLL and MMDS applications

Observe precautions for

handling electrostatic

sensitive devices.

3. Conforms to JEDEC reference outline MO229

for DRP-N.

• General purpose discrete E-pHEMT

for other high linearity applications

4. Linearity Figure of Merit (LFOM) is essentially

OIP3 divided by DC bias power.

ESD Machine Model (Class A)

ESD Human Body Model (Class 1B)

Refer to Agilent Application Note A004R:

Electrostatic Discharge Damage and Control.

ATF-501P8 Absolute Maximum Ratings^[1]

Notes:

Absolute

1. Operation of this device in excess of any one

of these parameters may cause permanent

damage.

Symbol

Parameter

Units

Maximum

V_DS

V_GS

Drain–Source Voltage^[2]

Gate–Source Voltage^[2]

Gate Drain Voltage^[2]

Drain Current^[2]

V

7

2. Assumes DC quiescent conditions.

3. Board (package belly) temperatureT_Bis 25°C.

Derate 43.5 mW/°C for T_B> 69.5°C.

4. Channel-to-board thermal resistance

measured using 150°C Liquid Crystal

Measurement method.

V

-5 to 0.8

V_GD

I_DS

V

-5 to 1

A

1

I_GS

Gate Current

mA

W

12

P_diss

P_{in max.}

T_CH

Total Power Dissipation^[3]

RF Input Power

3.5

dBm

°C

30

Channel Temperature

Storage Temperature

Thermal Resistance^[4]

150

T_STG

θ_{ch_b}

°C

-65 to 150

23

°C/W

Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA^[5,6]

120

100

80

60

40

20

0

120

100

80

60

40

20

0

800

700

600

500

400

300

200

100

Cpk=1.51

Stdev=3.38

Cpk=1.76

Stdev=0.3

Vgs=0.7V

Vgs=0.65V

Vgs=0.6V

–3 Std

+3 Std

–3 Std

+3 Std

Vgs=0.55V

Vgs=0.5V

0

1

2

3

4

5

6

45

55

65

75

85

27.5

28

29

29.5

30

30.5

28.5

Vds (V)

PAE (%)

P1dB (dBm)

Figure 3. PAE.

Figure 2. P1dB.

Figure 1. Typical IV curve

(Vgs = 0.01V) per step.

100

Cpk=1.1

Stdev=0.87

80

Cpk=1.61

Stdev=0.33

80

60

–3 Std

+3 Std

–3 Std

+3 Std

40

20

0

40

20

0

42 43

45 46 47 48 49 50

OIP3 (dBm)

13

14

15

16

17

44

GAIN (dB)

Figure 5. OIP3.

Figure 4. Gain.

Notes:

5. Distribution data sample size is 300 samples taken from 3 different wafers and 3 different lots.

Future wafers allocated to this product may have nominal values anywhere between the upper and

lower limits.

6. Measurements are made on production test board, which represents a trade-off between optimal

OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.

2

ATF-501P8 Electrical Specifications

T_A= 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified.

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

Vgs

Vth

Idss

Gm

Operational Gate Voltage

Threshold Voltage

Vds = 4.5V, Ids = 280 mA

Vds = 4.5V, Ids = 32 mA

Vds = 4.5V, Vgs = 0V

V

0.42

—

0.55

0.33

5

0.67

—

V

Saturated Drain Current

Transconductance

µA

—

Vds = 4.5V, Gm = ∆Ids/∆Vgs;

∆Vgs = Vgs1 – Vgs2

Vgs1 = 0.55V, Vgs2 = 0.5V

mmho

—

1872

—

Igss

NF

Gate Leakage Current

Noise Figure^[1]

Vds = 0V, Vgs = -4.5V

µA

-30

-0.8

—

f = 2 GHz

f = 900 MHz

dB

—

1

—

G

Gain^[1]

f = 2 GHz

f = 900 MHz

dB

13.5

—

15

16.6

16.5

—

OIP3

P1dB

PAE

Output 3^rdOrder Intercept Point^[1,2]

Output 1dB Compressed^[1]

Power Added Efficiency^[1]

f = 2 GHz

f = 900 MHz

dBm

43

—

45.5

42

—

f = 2 GHz

f = 900 MHz

dBm

27.5

—

29

27.3

—

f = 2 GHz

f = 900 MHz

%

50

—

65

49

—

ACLR

Notes:

Adjacent Channel Leakage

Power Ratio^[1,3]

Offset BW = 5 MHz

Offset BW = 10 MHz

dBc

—

63.9

64.1

—

1. Measurements at 2 GHz obtained using production test board described in Figure 2 while measurement at 0.9GHz obtained from load pull tuner.

2. i ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone.

ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5dBm per tone.

3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)

- Test Model 1

- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)

- Freq = 2140 MHz

- Pin = -5 dBm

- Channel Integrate Bandwidth = 3.84 MHz

4. Use proper bias, board, heatsinking and derating designs to ensure max channel temperature is not exceeded.

See absolute max ratings and application note for more details.

Input

Matching

Circuit

Γ_mag=0.79

Γ_ang=-164°

(1.1 dB loss)

Output

Matching

Circuit

Γ_mag=0.69

Γ_ang=-163°

(0.9 dB loss)

50 Ohm

Transmission

Line and

Drain Bias T

(0.3 dB loss)

50 Ohm

Transmission

Line and

Drain Bias T

(0.3 dB loss)

Output

DUT

Input

Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE measurements at 2 GHz. This circuit achieves a

trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.

3

1.8 nH

1.2 pF

3.3 nH

50 Ohm

.02

110 Ohm

.03

110 Ohm

.03

50 Ohm

.02

1.2 pF

47 nH

RF Input

DUT

RF Output

15 nH

2.2 µF

15 Ohm

2.2 µF

Gate

Supply

Drain

Supply

Figure 3. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in

gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.

Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions

The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V

280 mA and 4.5V 400 mA quiesent bias respectively:

Typical Gammas at Optimum OIP3 at 4.5V 280 mA

Optimized for maximum OIP3 at 4.5V 280 mA

Freq (GHz)

OIP3

Gain

P1dB

PAE

Gamma Source

Gamma Load

0.9

2.0

2.4

3.9

46.42

45.50

44.83

43.97

16.03

15.07

12.97

6.11

26.67

28.93

29.03

27.33

45.80

50.30

45.70

33.90

0.305 < -140

0.806 < -179.2

0.756 < -167

0.782 < -162

0.577 < 162

0.511 < 164

0.589 < -168

0.524 < -153

Typical Gammas at Optimum P1dB at 4.5V 280mA

Optimized for maximum P1dB at 4.5V 280 mA

Freq (GHz)

OIP3

Gain

P1dB

PAE

Gamma Source

Gamma Load

0.9

2.0

2.4

3.9

39.29

41.79

42.37

42.00

20.90

14.72

11.25

5.63

30.49

30.60

30.24

28.26

41.00

45.30

39.70

25.80

0.859 < 165

0.76 < -171

0.745 < -166

0.759 < -159

0.757 < 179

0.691 < -168

0.694 < -161

0.708 < -149

Typical Gammas at Optimum OIP3 at 4.5V 400 mA

Optimized for maximum OIP3 at 4.5V 400 mA

Freq (GHz)

OIP3

Gain

P1dB

PAE

Gamma Source

Gamma Load

0.9

2.0

2.4

3.9

49.15

48.18

47.54

45.44

16.85

14.72

12.47

8.05

27.86

29.36

29.10

28.49

44.20

48.89

46.83

37.02

0.5852 < -135.80

0.7267 < -175.37

0.6155 < -171.71

0.7888 < -148.43

0.4785 < 177.00

0.7338 < 179.56

0.5411 < -172.02

0.5247 < -145.84

Typical Gammas at Optimum P1dB at 4.5V 400 mA

Optimized for maximum P1dB at 4.5V 400 mA

Freq (GHz)

OIP3

Gain

P1dB

PAE

Gamma Source

Gamma Load

0.9

2.0

2.4

3.9

41.78

43.28

42.46

42.94

21.84

14.83

11.90

7.70

31.23

31.03

30.66

29.56

49.97

44.78

41.00

33.06

0.7765 < 168.50

0.8172 < -175.74

0.8149 < -163.78

0.8394 < -151.21

0.7589 < -175.09

0.8011 < -165.75

0.8042 < -161.79

0.7826 < -149.00

4

ATF-501P8 Typical Performance Curves (at 25°C unless specified otherwise)

Tuned for Optimal OIP3 at 4.5V 280 mA

55

50

45

40

35

30

55

50

45

40

35

30

35

30

25

20

15

4.5V

5.5V

3.5V

4.5V

5.5V

3.5V

4.5V

5.5V

3.5V

200 240 280 320 360 400 440 480 520 560 600 640

Idq (mA)

Figure 8. OIP3 vs. Idq and Vds at 2 GHz.

Figure 9. OIP3 vs. Idq and Vds at 0.9 GHz.

Figure 10. P1dB vs. Idq and Vds at 2 GHz.

25

35

30

25

4.5V

5.5V

3.5V

4.5V

5.5V

3.5V

20

15

10

5

20

15

10

5

4.5V

5.5V

3.5V

20

0

15

200 240 280 320 360 400 440 480 520 560 600 640

Idq (mA)

Figure 12. Gain vs. Idq and Vds at 2 GHz.

Figure 13. Gain vs. Idq and Vds at 0.9 GHz.

Figure 11. P1dB vs. Idq and Vds at 0.9 GHz.

60

50

40

60

50

40

30

4.5V

5.5V

4.5V

5.5V

20

3.5V

10

0

200 240 280 320 360 400 440 480 520 560 600 640

Idq (mA)

Figure 14. PAE vs. Idq and Vds at 2 GHz.

Figure 15. PAE vs. Idq and Vds at 0.9 GHz.

5

ATF-501P8 Typical Performance Curves (at 25°C unless specified otherwise)

Tuned for Optimal P1dB at 4.5V 280 mA

55

35

30

25

20

15

55

4.5V

5.5V

3.5V

4.5V

5.5V

3.5V

50

45

40

35

30

50

45

40

35

30

4.5V

5.5V

3.5V

200 240 280 320 360 400 440 480 520 560 600 640

Idq (mA)

Figure 16. OIP3 vs. Idq and Vds at 2 GHz.

Figure 18. P1dB vs. Idq and Vds at 2 GHz.

Figure 17. OIP3 vs. Idq and Vds at 0.9 GHz.

35

30

25

20

15

4.5V

5.5V

3.5V

20

15

10

5

4.5V

5.5V

3.5V

10

4.5V

5.5V

3.5V

20

5

0

15

200 240 280 320 360 400 440 480 520 560 600 640

Idq (mA)

Figure 19. P1dB vs. Idq and Vds at 0.9 GHz.

Figure 20. Gain vs. Idq and Vds at 2 GHz.

Figure 21. Gain vs. Idq and Vds at 0.9 GHz.

60

50

40

60

50

40

30

4.5V

5.5V

4.5V

5.5V

20

3.5V

10

0

200 240 280 320 360 400 440 480 520 560 600 640

Idq (mA)

Figure 22. PAE vs. Idq and Vds at 2 GHz.

Figure 23. PAE vs. Idq and Vds at 0.9 GHz.

6

ATF-501P8 Typical Performance Curves (at 25°C unless specified otherwise)

Tuned for Optimum OIP3 at 4.5V 280 mA

35

30

25

20

15

50

40

30

20

10

0

50

40

30

20

10

0

-40°C

25°C

85°C

-40°C

25°C

85°C

-40°C

25°C

85°C

0.5

1

1.5

2

2.5

3

3.5

4

0.5

1

1.5

2

2.5

3

3.5

4

0.5

1

1.5

2

2.5

3

3.5

4

FREQUENCY (GHz)

Figure 26. P1dB vs. Temperature and

Frequency at Optimal OIP3.

Figure 24. OIP3 vs. Temperature and

Frequency at Optimal OIP3.

Figure 25. OIP3 vs. Temperature and

Frequency at Optimal P1dB.

35

30

20

15

25

20

15

25

10

-40°C

25°C

85°C

-40°C

25°C

85°C

-40°C

10

25°C

85°C

20

15

5

0

5

0

0.5

1

1.5

2

2.5

3

3.5

4

0.5

1

1.5

2

2.5

3

3.5

4

1

1.5

2

2.5

3

3.5

4

FREQUENCY (GHz)

Figure 27. P1dB vs. Temperature and

Frequency at Optimal P1dB.

Figure 28. Gain vs. Temperature and

Frequency at Optimal OIP3.

Figure 29. Gain vs. Temperature and

Frequency at Optimal P1dB.

60

50

40

100

80

60

30

-40°C

25°C

85°C

-40°C

40

25°C

20

85°C

20

10

0

0.5

0

0.5

1

1.5

2

2.5

3

3.5

4

1

1.5

2

2.5

3

3.5

4

FREQUENCY (GHz)

Figure 30. PAE vs. Temperature and

Frequency at Optimal OIP3.

Figure 31. PAE vs. Temperature and

Frequency at Optimal P1dB.

7

ATF-501P8 Typical Performance Curves (at 25°C unless specified otherwise)

Tuned for Optimal OIP3 at 4.5V 400 mA

55

35

30

25

20

15

55

4.5V

5.5V

3.5V

50

45

40

35

30

50

45

40

35

30

4.5V

5.5V

3.5V

4.5V

5.5V

3.5V

200 240 280 320 360 400 440 480 520 560 600 640

Ids (mA)

Figure 32. OIP3 vs. Ids and Vds at 2 GHz.

Figure 34. P1dB vs. Ids and Vds at 2 GHz.

Figure 33. OIP3 vs. Ids and Vds at 900 MHz.

35

30

25

20

15

10

25

20

15

25

10

4.5V

5.5V

3.5V

4.5V

5.5V

3.5V

4.5V

5.5V

3.5V

20

15

5

0

5

0

200 240 280 320 360 400 440 480 520 560 600 640

Ids (mA)

Figure 36. Gain vs. Ids and Vds at 2 GHz.

Figure 35. P1dB vs. Ids and Vds at 900 MHz.

Figure 37. Gain vs. Ids and Vds at 900 MHz.

50

40

30

60

50

40

30

60

50

40

30

20

-40°C

25°C

85°C

20

4.5V

5.5V

3.5V

5.5V

3.5V

10

0

10

0

0.5

1

1.5

2

2.5

3

3.5

4

200 240 280 320 360 400 440 480 520 560 600 640

FREQUENCY (GHz)

Ids (mA)

Figure 40. OIP3 vs. Temperature and

Frequency at optimum OIP3.

Figure 39. PAE vs. Ids and Vds at 900 MHz.

Figure 38. PAE vs. Ids and Vds at 2 GHz.

Note:

Bias current (Ids) for the above charts are

quiescent conditions. Actual level may increase

or decrease depending on amount of RF drive.

8

ATF-501P8 Typical Performance Curves, continued (at 25°C unless specified otherwise)

Tuned for Optimal OIP3 at 4.5V 400 mA

50

40

30

20

10

0

35

30

25

20

15

35

30

25

20

15

-40°C

25°C

85°C

-40°C

25°C

85°C

-40°C

25°C

85°C

0.5

1

1.5

2

2.5

3

3.5

4

0.5

1

1.5

2

2.5

3

3.5

4

0.5

1

1.5

2

2.5

3

3.5

4

FREQUENCY (GHz)

Figure 41. OIP3 vs. Temperature and

Frequency at optimum P1dB.

Figure 42. P1dB vs. Temperature and

Frequency at optimum OIP3.

Figure 43. P1dB vs. Temperature and

Frequency at optimum P1dB.

20

15

10

100

25

20

15

-40°C

25°C

80

85°C

60

40

20

0

10

5

-40°C

25°C

-40°C

25°C

85°C

5

0

0.5

0

1

1.5

2

2.5

3

3.5

4

0.5

1

1.5

2

2.5

3

3.5

4

0.5

1

1.5

2

2.5

3

3.5

4

FREQUENCY (GHz)

Figure 44. Gain vs. Temperature and

Frequency at optimum OIP3.

Figure 45. Gain vs. Temperature and

Frequency at optimum P1dB.

Figure 46. PAE vs. Temperature and

Frequency at optimum OIP3.

55

50

45

40

35

30

55

50

45

40

35

30

100

-40°C

25°C

4.5V

5.5V

3.5V

4.5V

5.5V

3.5V

80

85°C

60

40

20

0

200 240 280 320 360 400 440 480 520 560 600 640

0.5

1

1.5

2

2.5

3

3.5

4

Ids (mA)

FREQUENCY (GHz)

Figure 48. OIP3 vs. Ids and Vds at 2 GHz.

Figure 49. OIP3 vs. Ids and Vds at 900 MHz.

Figure 47. PAE vs. Temperature and

Frequency at optimum P1dB.

Note:

Bias current (Ids) for the above charts are

quiescent conditions. Actual level may increase

or decrease depending on amount of RF drive.

9

ATF-501P8 Typical Performance Curves, continued (at 25°C unless specified otherwise)

Tuned for Optimal P1dB at 4.5V 400 mA

35

30

25

20

15

35

30

25

20

15

25

20

15

10

5

4.5V

5.5V

3.5V

4.5V

5.5V

3.5V

4.5V

5.5V

3.5V

0

200 240 280 320 360 400 440 480 520 560 600 640

Ids (mA)

Figure 51. P1dB vs. Ids and Vds at 900 MHz.

Figure 50. P1dB vs. Ids and Vds at 2 GHz.

Figure 52. Gain vs. Ids and Vds at 2 GHz.

80

60

30

25

20

15

60

50

40

30

40

20

4.5V

5.5V

3.5V

4.5V

5.5V

3.5V

4.5V

5.5V

3.5V

20

10

5

10

0

200 240 280 320 360 400 440 480 520 560 600 640

Ids (mA)

Figure 55. PAE vs. Ids and Vds at 900 MHz.

Figure 53. Gain vs. Ids and Vds at 900 MHz.

Figure 54. PAE vs. Ids and Vds at 2 GHz.

Note:

Bias current (Ids) for the above charts are

quiescent conditions. Actual level may increase

or decrease depending on amount of RF drive.

10

ATF-501P8 Typical Scattering Parameters, V_DS= 4.5V, I_DS= 280 mA

Freq.

GHz

S₁₁

S₂₁

S₁₂

S₂₂

MSG/MAG

dB

K

Mag. Ang.

dB

Mag. Ang.

dB

Mag. Ang.

factor

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.5

2

2.5

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

0.915

0.911

0.910

0.908

0.907

0.908

0.905

0.909

0.902

0.901

0.898

0.902

0.893

0.899

0.895

0.898

0.886

0.868

0.862

0.847

0.844

0.837

0.824

0.821

0.805

-132.3

-156.2

-165.4

-170.9

-173.4

-176.1

-178.5

179.8

178.2

176.6

170.5

166.0

165.0

161.1

155.0

145.0

134.9

125.8

115.6

105.5

95.5

31.6

26.2

22.8

20.3

18.7

17.1

15.8

14.7

13.6

12.7

9.1

37.990

20.324

13.783

10.342

8.604

7.194

6.167

5.407

4.799

4.308

2.859

2.264

2.134

1.772

1.412

1.110

0.902

0.687

0.604

0.542

0.505

0.469

0.398

0.403

0.377

0.354

0.327

0.323

112.2

99.9

94.5

91.1

88.4

86.1

84.1

82.1

80.3

78.3

70.3

64.4

63.1

57.7

49.3

37.6

22.6

9.0

-38.4 0.012

-37.7 0.013

-37.1 0.014

-36.5 0.015

-35.9 0.016

-35.4 0.017

-34.9 0.018

-34.4 0.019

-34.0 0.020

-31.7 0.026

-30.5 0.030

-30.2 0.031

-28.9 0.036

-27.3 0.043

-24.7 0.058

-22.9 0.072

-22.2 0.078

-20.8 0.091

-19.6 0.105

-18.9 0.114

-17.6 0.132

-17.4 0.135

-16.0 0.159

-15.3 0.171

-14.6 0.187

-14.2 0.194

-13.4 0.215

-12.5 0.237

29.3

24.0

24.5

27.3

29.6

32.4

34.4

36.3

38.3

39.9

45.0

46.9

47.2

47.4

46.5

43.5

35.6

27.3

22.0

12.3

9.7

0.647

0.689

0.699

0.702

0.691

0.694

0.695

0.692

0.698

0.700

0.699

0.697

0.707

0.699

0.697

0.652

0.646

0.641

0.695

0.742

0.735

0.766

0.800

0.797

0.763

0.786

0.781

-160.6

-171.1

-175.7

-178.5

-179.9

178.5

177.2

175.2

175.1

173.9

169.4

165.6

163.0

159.1

153.7

146.8

145.3

134.1

117.4

115.5

104.5

91.3

35.0

31.9

29.9

28.7

27.6

26.5

25.6

24.8

24.0

23.3

18.2

16.0

15.4

13.8

11.7

9.7

7.8

5.7

4.2

3.2

2.5

1.6

-0.1

-0.3

-1.1

-2.3

-2.4

-3.5

0.173

0.314

0.436

0.569

0.648

0.736

0.800

0.871

0.906

0.953

1.128

1.209

1.241

1.278

1.326

1.272

1.286

1.394

1.463

1.447

1.455

1.431

1.661

1.491

1.397

1.414

1.608

1.488

1.575

7.1

6.6

5.0

3.0

0.9

-0.9

-3.3

-4.4

-5.3

-5.9

-6.6

-8.0

-7.9

-8.5

-9.0

-9.7

-9.8

-1.1

-13.0

-20.2

-29.7

-40.8

-47.5

-58.4

-67.2

-72.0

-82.7

-90.1

84.7

74.0

64.5

55.6

47.4

39.9

31.6

24.6

0.5

-6.3

88.1

78.4

68.9

65.6

51.5

38.9

29.5

-12.3

-21.3

-30.1

-36.8

-44.6

-51.8

-10.5 0.298

40

30

Notes:

1. S parameter is measured on a microstrip line

made on 0.025 inch thick alumina carrier. The

input reference plane is at the end of the gate

lead. The output reference plane is at the end

of the drain lead.

S21

MSG

MAG

20

10

0

-10

-20

0

2

4

6

8

10 12 14 16 18

FREQUENCY (GHz)

Figure 56. MSG/MAG & |S21|²vs. Frequency

at 4.5V 280mA.

11

ATF-501P8 Typical Scattering Parameters, V_DS= 4.5V, I_DS= 200 mA

Freq.

GHz

S₁₁

S₂₁

S₁₂

S₂₂

MSG/MAG

dB

K

Mag. Ang.

dB

Mag. Ang.

dB

Mag. Ang.

factor

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.5

2

2.5

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

0.922

0.914

0.911

0.912

0.910

0.913

0.910

0.904

0.905

0.906

0.905

0.904

0.899

0.905

0.902

0.900

0.894

0.882

0.873

0.856

0.853

0.837

0.829

0.828

0.807

-131.5

-155.7

-165.2

-170.5

-173.3

-176.0

-178.3

179.9

178.4

176.8

170.5

166.1

165.2

161.1

154.9

145.1

134.9

126.0

115.8

106.4

95.9

31.1

25.7

22.3

19.8

18.3

16.7

15.4

14.2

13.2

12.2

8.7

35.978

19.290

13.088

9.814

8.176

6.834

5.861

5.141

4.558

4.092

2.718

2.153

2.027

1.684

1.354

1.053

0.863

0.661

0.587

0.527

0.498

0.448

0.393

0.380

0.361

0.345

0.336

112.6

100.1

94.7

91.4

88.6

86.4

84.3

82.3

80.5

78.7

70.5

64.9

63.7

58.3

50.3

38.5

23.9

10.5

0.3

-11.1

-17.7

-26.8

-38.8

-45.4

-55.0

-64.1

-72.0

-80.5

-88.2

-37.7 0.013

-36.5 0.015

-35.9 0.016

-35.4 0.017

-34.9 0.018

-34.4 0.019

-34.0 0.020

-33.6 0.021

-31.4 0.027

-30.2 0.031

-29.9 0.032

-28.6 0.037

-27.1 0.044

-24.7 0.058

-22.9 0.072

-22.2 0.078

-20.8 0.091

-19.6 0.105

-18.9 0.114

-17.7 0.130

-17.5 0.133

-16.1 0.156

-15.6 0.166

-14.8 0.182

-14.4 0.190

-13.4 0.213

-12.5 0.236

28.9

22.4

22.5

24.9

26.8

29.3

31.3

33.0

34.9

36.6

41.7

44.2

44.5

44.9

44.3

41.6

34.1

26.0

20.8

11.1

8.4

0.664

0.709

0.719

0.722

0.713

0.716

0.718

0.712

0.714

0.721

0.719

0.715

0.725

0.716

0.712

0.660

0.654

0.649

0.700

0.746

0.738

0.768

0.800

0.799

0.763

0.787

0.782

-159.8

-170.7

-175.4

-178.4

-179.9

178.6

177.2

175.5

175.0

173.8

169.0

165.2

162.5

158.5

152.9

145.7

144.1

132.9

116.3

114.4

103.4

90.5

34.4

31.1

29.4

27.9

26.8

25.8

24.9

24.3

23.6

22.9

18.3

16.0

15.4

13.7

11.8

9.5

7.7

5.6

4.2

3.0

2.6

1.6

0.1

0.142

0.274

0.390

0.510

0.577

0.653

0.725

0.801

0.840

0.903

1.077

1.161

1.188

1.227

1.262

1.271

1.263

1.371

1.423

1.451

1.412

1.407

1.614

1.492

1.399

1.439

1.556

1.449

1.542

6.7

6.1

4.5

2.6

0.4

-1.3

-3.6

-4.6

-5.6

-6.1

-7.0

-8.1

-8.4

-8.8

-9.2

-9.5

84.9

74.3

64.6

56.0

47.4

40.6

32.7

26.1

-0.9

-7.5

87.3

77.8

68.4

65.2

51.1

38.5

29.1

-13.1

-21.4

-29.6

-35.9

-43.3

-50.5

-0.1

-0.2

-1.0

-1.8

-2.0

-3.2

-10.2 0.310

40

30

Notes:

1. S parameter is measured on a microstrip line

made on 0.025 inch thick alumina carrier. The

input reference plane is at the end of the gate

lead. The output reference plane is at the end

of the drain lead.

S21

MSG

MAG

20

10

0

-10

-20

0

2

4

6

8

10 12 14 16 18

FREQUENCY (GHz)

Figure 57. MSG/MAG & |S21|²vs. Frequency

at 4.5V 200mA.

12

ATF-501P8 Typical Scattering Parameters, V_DS= 4.5V, I_DS= 360 mA

Freq.

GHz

S₁₁

S₂₁

S₁₂

S₂₂

MSG/MAG

dB

K

Mag. Ang.

dB

Mag. Ang.

dB

Mag. Ang.

factor

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.5

2

2.5

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

0.911

0.910

0.911

0.913

0.907

0.910

0.906

0.913

0.907

0.904

0.906

0.904

0.907

0.906

0.903

0.896

0.903

0.891

0.885

0.873

0.866

0.849

0.841

0.828

0.817

0.809

-132.8

-156.5

-165.8

-171.1

-173.7

-176.3

-178.6

179.7

178.0

176.4

170.3

165.9

164.8

160.9

154.7

144.8

134.7

125.6

115.0

105.6

94.9

31.6

26.2

22.8

20.3

18.7

17.2

15.8

14.7

13.7

12.7

9.2

38.110

20.415

13.848

10.397

8.640

7.232

6.200

5.431

4.826

4.328

2.878

2.275

2.146

1.783

1.424

1.114

0.907

0.691

0.612

0.544

0.504

0.465

0.403

0.406

0.379

0.353

0.337

0.322

112.4

100.0

94.6

91.3

88.5

86.2

84.2

82.2

80.3

78.4

70.4

64.5

63.2

57.9

49.4

37.7

22.7

8.9

-39.2 0.011

-38.4 0.012

-37.7 0.013

-36.5 0.015

-35.9 0.016

-35.4 0.017

-34.9 0.018

-34.0 0.020

-32.0 0.025

-30.5 0.030

-30.2 0.031

-28.9 0.036

-27.3 0.043

-24.7 0.058

-22.7 0.073

-22.2 0.078

-20.7 0.092

-19.5 0.106

-18.8 0.115

-17.5 0.133

-17.3 0.137

-15.9 0.161

-15.2 0.174

-14.5 0.189

-14.2 0.196

-13.2 0.218

-12.4 0.240

30.3

24.9

26.2

28.9

31.8

34.5

36.8

38.8

40.6

42.3

47.0

48.7

49.0

47.7

44.2

36.2

27.9

22.4

12.8

10.2

0.9

0.649

0.692

0.701

0.704

0.693

0.694

0.696

0.697

0.695

0.694

0.698

0.702

0.701

0.699

0.708

0.701

0.699

0.654

0.647

0.642

0.697

0.743

0.735

0.768

0.801

0.800

0.763

0.787

0.783

-162.1

-171.8

-176.2

-178.9

179.7

178.2

176.9

175.6

174.8

173.7

169.4

165.5

162.8

159.0

153.6

146.7

145.1

134.0

117.3

115.4

104.4

91.3

35.4

32.3

30.3

29.0

27.6

26.6

25.9

25.0

24.3

23.4

18.2

16.1

15.5

14.0

12.0

9.7

7.9

5.9

4.6

2.9

2.4

1.6

0.1

0.0

0.200

0.340

0.472

0.600

0.679

0.747

0.838

0.914

0.930

0.984

1.154

1.193

1.231

1.246

1.275

1.268

1.256

1.355

1.375

1.495

1.462

1.416

1.607

1.464

1.361

1.376

1.547

1.491

1.513

7.1

6.6

5.0

3.1

0.9

-0.8

-3.2

-4.3

-5.3

-6.0

-6.7

-7.9

-7.8

-8.4

-9.0

-9.4

-9.8

-1.0

-13.3

-20.0

-28.4

-41.1

-47.3

-57.9

-69.0

-73.1

-83.0

-92.7

84.3

74.0

64.3

55.7

46.6

39.0

31.0

23.9

-5.8

87.9

78.3

68.8

65.5

51.4

38.7

29.3

-12.1

-21.3

-30.3

-37.1

-45.1

-52.4

-0.2

-0.9

-2.0

-2.4

-3.2

-10.3 0.304

40

30

Notes:

1. S parameter is measured on a microstrip line

made on 0.025 inch thick alumina carrier. The

input reference plane is at the end of the gate

lead. The output reference plane is at the end

of the drain lead.

S21

MSG

MAG

20

10

0

-10

-20

0

2

4

6

8

10 12 14 16 18

FREQUENCY (GHz)

Figure 58. MSG/MAG & |S21|²vs. Frequency

at 4.5V 360mA.

13

ATF-501P8 Typical Scattering Parameters, V_DS= 3.5V, I_DS= 280 mA

Freq.

GHz

S₁₁

S₂₁

S₁₂

S₂₂

MSG/MAG

dB

K

Mag. Ang.

dB

Mag. Ang.

dB

Mag. Ang.

factor

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.5

2

2.5

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

0.923

0.922

0.920

0.915

0.917

0.915

0.918

0.913

0.910

0.913

0.906

0.910

0.903

0.907

0.903

0.897

0.889

0.880

0.870

0.847

0.839

0.816

0.808

0.794

0.769

-133.9

-157.1

-166.1

-171.3

-173.9

-176.5

-178.9

179.6

177.7

176.4

170.4

166.1

164.8

160.9

154.6

144.7

134.6

125.4

115.2

105.5

94.8

30.6

25.2

21.8

19.3

17.7

16.2

14.8

13.6

12.7

11.7

8.1

34.047

18.161

12.313

9.220

7.674

6.429

5.511

4.813

4.302

3.850

2.555

2.025

1.912

1.588

1.276

1.012

0.827

0.636

0.570

0.522

0.499

0.477

0.411

0.421

0.397

0.390

0.345

0.354

0.329

111.6

99.7

94.5

91.4

88.7

86.6

84.6

82.8

81.0

79.1

72.0

66.3

65.1

60.4

52.2

41.6

27.2

14.0

5.1

-38.4 0.012

-37.7 0.013

-37.1 0.014

-35.9 0.016

-35.4 0.017

-34.9 0.018

-34.4 0.019

-33.6 0.021

-31.4 0.027

-30.2 0.031

-29.9 0.032

-28.6 0.037

-26.9 0.045

-24.4 0.060

-22.5 0.075

-22.0 0.079

-20.6 0.093

-19.4 0.107

-18.8 0.115

-17.7 0.131

-17.6 0.132

-16.3 0.153

-15.8 0.163

-15.0 0.178

-14.6 0.186

-13.5 0.211

-12.6 0.234

28.8

23.8

25.0

27.5

30.0

32.9

34.8

37.2

38.8

40.5

45.6

47.1

47.6

47.5

45.9

42.4

34.3

25.3

19.8

9.9

7.0

-2.4

-9.1

-14.5

-22.5

-30.0

-35.9

-43.3

-50.7

0.716

0.759

0.767

0.770

0.760

0.761

0.762

0.760

0.764

0.759

0.763

0.762

0.758

0.762

0.754

0.742

0.674

0.669

0.666

0.709

0.754

0.745

0.770

0.801

0.795

0.755

0.787

0.777

-164.7

-173.4

-177.3

-179.8

178.8

177.2

175.8

175.0

173.7

172.4

168.1

163.9

161.0

156.7

150.9

143.3

141.3

130.1

113.5

112.0

100.9

88.2

34.5

31.5

29.4

28.2

26.8

25.8

24.9

24.3

23.5

22.6

18.1

15.9

15.2

13.6

11.5

9.4

7.5

5.3

3.9

2.8

2.4

1.9

0.3

0.1

0.166

0.301

0.427

0.549

0.622

0.697

0.761

0.843

0.877

0.930

1.070

1.139

1.181

1.206

1.261

1.226

1.239

1.402

1.448

1.484

1.458

1.378

1.614

1.519

1.458

1.495

1.727

1.538

1.632

6.1

5.6

4.0

2.1

0.1

-1.6

-3.9

-4.9

-5.6

-6.0

-6.4

-7.7

-7.5

-8.0

-8.2

-9.2

-9.0

-9.7

-7.0

-14.5

-23.6

-33.8

-41.1

-52.2

-63.9

-70.3

-81.5

-91.7

84.2

73.4

63.8

55.1

47.3

39.8

32.3

26.0

85.0

75.9

66.5

63.4

49.5

36.6

27.7

-0.1

-0.8

-2.3

-2.1

-3.2

40

30

Notes:

1. S parameter is measured on a microstrip line

made on 0.025 inch thick alumina carrier. The

input reference plane is at the end of the gate

lead. The output reference plane is at the end

of the drain lead.

S21

MSG

MAG

20

10

0

-10

-20

0

2

4

6

8

10 12 14 16 18

FREQUENCY (GHz)

Figure 59. MSG/MAG & |S21|²vs. Frequency

at 3.5V 280mA.

14

ATF-501P8 Typical Scattering Parameters, V_DS= 3.5V, I_DS= 200 mA

Freq.

GHz

S₁₁

S₂₁

S₁₂

S₂₂

MSG/MAG

dB

K

Mag. Ang.

dB

Mag. Ang.

dB

Mag. Ang.

factor

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0.924

0.919

0.918

0.915

0.914

0.919

0.916

0.912

0.911

0.910

0.911

0.909

0.911

0.902

0.904

0.901

0.897

0.880

0.872

0.849

0.841

0.820

0.809

0.794

0.770

0.766

-132.7

-156.5

-165.7

-171.0

-173.6

-176.2

-178.5

179.8

178.0

176.7

170.5

166.0

164.9

160.9

154.7

144.8

134.8

125.5

115.6

105.6

95.4

30.5

25.0

21.7

19.2

17.6

16.0

14.7

13.5

12.5

11.6

8.0

33.400

17.862

12.118

9.080

7.556

6.328

5.422

4.739

4.232

3.788

2.515

1.991

1.882

1.562

1.255

0.988

0.813

0.624

0.555

0.509

0.477

0.450

0.393

0.408

0.391

0.377

0.354

0.350

0.332

0.346

112.1

99.9

94.6

91.4

88.7

86.5

84.5

82.7

80.8

79.0

71.5

65.8

64.7

59.7

51.5

40.4

25.9

12.7

3.9

-37.1 0.014

-36.5 0.015

-35.9 0.016

-35.4 0.017

-34.9 0.018

-34.4 0.019

-34.0 0.020

-33.6 0.021

-33.2 0.022

-31.4 0.027

-29.9 0.032

-29.6 0.033

-28.6 0.037

-26.9 0.045

-24.4 0.060

-22.6 0.074

-22.0 0.079

-20.6 0.093

-19.4 0.107

-18.8 0.115

-17.7 0.130

-17.6 0.132

-16.4 0.152

-15.8 0.162

-15.1 0.176

-14.7 0.185

-13.6 0.210

-12.6 0.234

-11.5 0.266

28.4

22.1

22.7

24.6

26.4

29.3

31.3

33.2

35.1

36.7

42.0

44.3

44.7

45.0

43.9

41.0

33.3

24.6

19.3

9.5

0.703

0.749

0.757

0.760

0.751

0.752

0.753

0.752

0.755

0.750

0.755

0.753

0.750

0.754

0.746

0.735

0.669

0.664

0.662

0.705

0.751

0.742

0.767

0.798

0.793

0.754

0.785

0.776

0.797

-162.3

-172.1

-176.5

-179.2

179.4

177.7

176.3

175.3

174.1

172.8

168.3

165.0

164.2

161.3

157.0

151.3

143.7

141.8

130.6

113.9

112.3

101.2

88.5

33.8

30.8

29.1

27.5

26.5

25.5

24.6

23.7

23.0

22.4

18.2

15.8

15.2

13.5

11.5

9.3

0.150

0.269

0.390

0.496

0.559

0.651

0.717

0.777

0.806

0.870

1.057

1.126

1.157

1.215

1.244

1.225

1.255

1.438

1.455

1.466

1.437

1.429

1.646

1.539

1.465

1.527

1.708

1.543

1.634

1.394

1.5

1.9

2

6.0

5.5

2.4

3

4

3.9

2.0

-0.1

-1.8

-4.1

-5.1

-5.9

-6.4

-6.9

-8.1

-7.8

-8.2

-8.5

-9.0

-9.1

-9.6

-9.2

5

7.4

6

5.0

7

3.8

8

-8.3

2.7

9

-14.5

-23.9

-34.0

-42.5

-53.2

-63.5

-69.5

-84.1

-89.0

-99.8

6.6

2.3

10

11

12

13

14

15

16

17

18

84.1

-3.0

1.5

73.7

-9.7

0.0

64.2

-14.9

-22.8

-29.9

-35.9

-43.1

-50.5

-60.7

85.3

0.0

55.5

76.2

-0.2

-1.0

-2.1

-3.1

-2.6

47.1

66.8

39.3

63.6

32.7

49.8

25.8

36.9

21.5

28.0

40

30

Notes:

1. S parameter is measured on a microstrip line

made on 0.025 inch thick alumina carrier. The

input reference plane is at the end of the gate

lead. The output reference plane is at the end

of the drain lead.

S21

MSG

MAG

20

10

0

-10

-20

0

2

4

6

8

10 12 14 16 18

FREQUENCY (GHz)

Figure 60. MSG/MAG & |S21|²vs. Frequency

at 3.5V 200mA.

15

ATF-501P8 Typical Scattering Parameters, V_DS= 3.5V, I_DS= 360 mA

Freq.

GHz

S₁₁

S₂₁

S₁₂

S₂₂

MSG/MAG

dB

K

Mag. Ang.

dB

Mag. Ang.

dB

Mag. Ang.

factor

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.5

2

2.5

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

0.919

0.920

0.921

0.918

0.915

0.916

0.914

0.919

0.914

0.912

0.914

0.910

0.912

0.913

0.908

0.903

0.906

0.904

0.902

0.893

0.881

0.873

0.847

0.844

0.827

0.818

0.799

0.780

-134.2

-157.3

-166.4

-171.4

-174.0

-176.7

-178.9

179.4

178.1

176.2

170.2

165.8

164.7

160.8

154.4

144.7

134.5

125.5

115.1

105.3

95.0

30.8

25.3

21.9

19.4

17.8

16.3

15.0

13.8

12.8

11.8

8.3

34.576

18.445

12.499

9.372

7.792

6.537

5.596

4.888

4.370

3.911

2.596

2.059

1.940

1.618

1.296

1.023

0.844

0.647

0.582

0.532

0.513

0.474

0.417

0.424

0.407

0.389

0.357

0.353

0.344

111.7

99.7

94.6

91.5

88.8

86.6

84.7

83.1

81.1

79.3

72.2

66.7

65.6

60.7

52.9

42.0

27.9

15.0

5.9

-39.2 0.011

-38.4 0.012

-37.7 0.013

-36.5 0.015

-35.9 0.016

-35.4 0.017

-34.9 0.018

-34.4 0.019

-34.0 0.020

-31.7 0.026

-30.2 0.031

-29.9 0.032

-28.6 0.037

-26.9 0.045

-24.4 0.060

-22.5 0.075

-21.9 0.080

-20.6 0.093

-19.4 0.107

-18.8 0.115

-17.7 0.131

-17.5 0.133

-16.2 0.154

-15.7 0.165

-14.9 0.180

-14.6 0.187

-13.5 0.211

-12.5 0.236

29.6

25.5

26.7

30.0

32.7

35.7

37.9

40.0

41.8

43.0

47.8

49.2

49.3

49.0

47.3

43.2

34.8

25.7

20.3

10.3

7.5

0.722

0.763

0.771

0.773

0.763

0.765

0.764

0.768

0.762

0.761

0.766

0.765

0.761

0.765

0.756

0.745

0.676

0.670

0.666

0.710

0.756

0.746

0.772

0.802

0.793

0.759

0.786

0.777

-166.1

-174.1

-177.8

179.8

178.6

176.9

175.6

174.9

173.4

172.2

168.1

163.8

160.9

156.6

150.8

143.0

141.1

129.9

113.3

111.6

100.7

88.2

35.0

31.9

29.8

28.6

27.2

26.1

25.2

24.3

23.6

22.9

18.0

15.9

15.2

13.6

11.8

9.4

7.6

5.3

4.1

3.1

2.7

1.9

0.5

0.2

0.191

0.336

0.460

0.599

0.665

0.744

0.809

0.871

0.892

0.963

1.103

1.142

1.185

1.210

1.221

1.236

1.233

1.392

1.430

1.433

1.416

1.388

1.577

1.507

1.407

1.457

1.637

1.526

1.549

6.3

5.8

4.2

2.3

0.2

-1.5

-3.8

-4.7

-5.5

-5.8

-6.5

-7.6

-7.5

-7.8

-8.2

-8.9

-9.0

-9.3

-6.4

-13.3

-22.0

-32.9

-40.6

-52.7

-63.7

-67.9

-81.4

-90.7

84.1

73.6

63.9

55.4

47.4

40.2

32.9

26.7

-1.9

-8.5

84.9

75.7

66.3

63.2

49.4

36.5

27.6

-13.9

-22.0

-29.7

-35.8

-43.1

-50.4

0.1

-0.7

-1.9

-2.0

-2.7

40

30

Notes:

1. S parameter is measured on a microstrip line

made on 0.025 inch thick alumina carrier. The

input reference plane is at the end of the gate

lead. The output reference plane is at the end

of the drain lead.

S21

MSG

MAG

20

10

0

-10

-20

0

2

4

6

8

10 12 14 16 18

FREQUENCY (GHz)

Figure 61. MSG/MAG & |S21|²vs.

Frequency at 3.5V 360mA.

16

ATF-501P8 Typical Scattering Parameters, V_DS= 5.5V, I_DS= 280 mA

Freq.

GHz

S₁₁

S₂₁

S₁₂

S₂₂

MSG/MAG

dB

K

Mag. Ang.

dB

Mag. Ang.

dB

Mag. Ang.

factor

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.5

2

2.5

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

0.914

0.912

0.914

0.913

0.909

0.910

0.911

0.908

0.913

0.907

0.903

0.905

0.903

0.900

0.902

0.895

0.903

0.898

0.884

0.871

0.864

0.849

0.854

0.841

0.834

0.824

0.813

-131.5

-155.7

-165.2

-170.5

-173.3

-176.0

-178.2

-179.8

178.4

176.7

170.5

166.2

165.2

161.0

154.7

145.0

134.9

125.8

115.4

105.8

95.4

31.8

26.4

23.1

20.6

19.0

17.4

16.1

14.9

13.9

13.0

9.4

39.087

20.961

14.228

10.678

8.871

7.417

6.365

5.577

4.956

4.446

2.951

2.331

2.197

1.822

1.455

1.129

0.916

0.695

0.616

0.546

0.499

0.458

0.386

0.385

0.366

0.330

112.6

100.1

94.5

91.1

88.3

86.0

83.9

81.8

79.9

78.0

69.6

63.5

62.1

56.7

47.9

35.9

20.6

6.8

-38.4 0.012

-37.7 0.013

-37.1 0.014

-36.5 0.015

-35.9 0.016

-35.4 0.017

-34.9 0.018

-34.4 0.019

-34.0 0.020

-32.0 0.025

-30.5 0.030

-30.2 0.031

-29.1 0.035

-27.3 0.043

-24.9 0.057

-23.0 0.071

-22.3 0.077

-20.8 0.091

-19.6 0.105

-18.9 0.114

-17.6 0.132

-17.3 0.137

-15.8 0.162

-15.2 0.174

-14.4 0.191

-14.1 0.198

-13.2 0.219

-12.4 0.240

29.6

23.9

24.1

26.7

29.0

31.7

34.3

36.0

38.0

39.4

44.5

46.4

47.0

47.3

46.7

43.8

36.2

28.3

22.9

13.3

10.9

1.6

0.618

0.661

0.670

0.674

0.662

0.663

0.666

0.667

0.664

0.672

0.674

0.672

0.685

0.679

0.681

0.648

0.641

0.636

0.694

0.741

0.731

0.768

0.804

0.807

0.768

0.792

0.788

-158.7

-170.0

-174.9

-177.9

-179.3

179.2

177.8

176.3

175.7

174.5

170.1

166.5

164.0

160.3

155.2

148.6

147.0

135.8

119.2

117.2

106.2

92.7

35.1

32.1

30.1

28.8

27.7

26.7

25.7

24.9

24.2

23.5

18.4

16.3

15.7

14.0

12.0

9.8

8.0

6.1

4.5

3.3

2.4

1.6

-0.2

-0.3

-0.2

-1.3

-2.3

-2.5

-3.5

0.172

0.307

0.420

0.550

0.638

0.715

0.782

0.850

0.878

0.958

1.141

1.182

1.222

1.284

1.307

1.278

1.271

1.340

1.401

1.416

1.459

1.420

1.655

1.479

1.332

1.385

1.536

1.466

1.533

7.4

6.8

5.2

3.3

1.1

-0.8

-3.2

-4.2

-5.3

-6.0

-6.8

-8.3

-8.7

-9.6

-3.5

-16.3

-23.2

-31.5

-43.6

-49.9

-60.4

-68.9

-73.5

-83.2

-88.9

84.6

74.2

64.8

56.1

47.7

40.0

31.9

24.7

-5.2

89.5

79.6

70.2

66.7

52.4

39.7

30.0

-11.5

-20.9

-29.9

-37.0

-45.0

-52.2

-10.0 0.317

-10.2 0.310

-10.7 0.291

40

30

Notes:

1. S parameter is measured on a microstrip line

made on 0.025 inch thick alumina carrier. The

input reference plane is at the end of the gate

lead. The output reference plane is at the end

of the drain lead.

S21

MSG

MAG

20

10

0

-10

-20

0

2

4

6

8

10 12 14 16 18

FREQUENCY (GHz)

Figure 62. MSG/MAG & |S21|²vs. Frequency

at 5.5V 280mA.

17

ATF-501P8 Typical Scattering Parameters, V_DS= 5.5V, I_DS= 200 mA

Freq.

GHz

S₁₁

S₂₁

S₁₂

S₂₂

MSG/MAG

dB

K

Mag. Ang.

dB

Mag. Ang.

dB

Mag. Ang.

factor

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.5

2

2.5

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

0.921

0.914

0.913

0.909

0.908

0.911

0.909

0.905

0.907

0.903

0.906

0.903

0.904

0.899

0.904

0.901

0.896

0.891

0.877

0.871

0.851

0.850

0.839

0.834

0.827

0.814

-130.1

-155.0

-164.6

-170.1

-172.9

-175.7

-178.1

-179.7

178.5

176.8

170.8

166.3

165.3

161.2

155.0

145.1

135.2

126.2

115.6

106.2

95.4

31.8

26.4

23.0

20.5

18.9

17.4

16.0

14.9

13.8

12.9

9.3

38.725

20.822

14.136

10.611

8.824

7.375

6.329

5.549

4.922

4.418

2.933

2.322

2.182

1.815

1.447

1.123

0.909

0.693

0.608

0.536

0.497

0.446

0.386

0.387

0.364

0.335

113.1

100.3

94.7

91.3

88.4

86.0

83.9

81.8

80.0

78.0

69.4

63.4

62.1

56.5

47.8

35.9

20.3

6.5

-37.7 0.013

-37.1 0.014

-36.5 0.015

-35.4 0.017

-34.9 0.018

-34.4 0.019

-34.0 0.020

-33.6 0.021

-31.7 0.026

-30.5 0.030

-30.2 0.031

-28.9 0.036

-27.3 0.043

-24.9 0.057

-23.0 0.071

-22.4 0.076

-20.9 0.090

-19.7 0.104

-18.9 0.113

-17.7 0.131

-17.4 0.135

-15.9 0.160

-15.3 0.172

-14.5 0.188

-14.2 0.195

-13.3 0.216

-12.5 0.238

29.6

22.8

22.7

24.9

26.8

29.4

31.3

32.9

35.3

36.4

41.7

44.3

44.5

45.1

44.7

42.3

35.1

27.4

22.2

12.6

10.2

1.0

0.615

0.659

0.669

0.673

0.662

0.665

0.667

0.662

0.664

0.673

0.674

0.673

0.671

0.684

0.678

0.681

0.647

0.640

0.634

0.692

0.739

0.730

0.767

0.803

0.805

0.768

0.792

0.790

-156.5

-168.9

-174.1

-177.3

-178.9

179.6

178.2

176.5

176.0

174.8

170.3

166.6

164.1

160.4

155.3

148.7

147.2

136.0

119.4

117.5

106.3

92.9

34.7

31.7

29.7

28.5

27.2

26.4

25.5

24.7

23.9

23.2

18.8

16.5

15.7

14.2

12.1

9.9

8.2

6.2

4.6

3.1

2.6

1.5

-0.1

-0.3

-1.3

-2.5

-3.2

0.145

0.274

0.385

0.510

0.576

0.672

0.739

0.798

0.843

0.897

1.079

1.153

1.208

1.226

1.273

1.257

1.235

1.332

1.386

1.459

1.408

1.403

1.625

1.480

1.364

1.403

1.585

1.472

1.510

7.3

6.8

5.2

3.2

1.0

-0.8

-3.2

-4.3

-5.4

-6.1

-7.0

-8.3

-8.2

-8.8

-9.5

-4.0

-15.9

-23.9

-32.3

-42.5

-49.0

-60.0

-67.9

-72.5

-82.4

-89.4

85.0

74.4

64.9

56.2

48.0

39.7

32.2

24.4

-5.8

89.7

79.8

70.5

66.9

52.7

39.9

30.2

-11.8

-21.0

-29.9

-36.8

-44.6

-51.8

-10.2 0.309

-10.5 0.298

40

30

Notes:

1. S parameter is measured on a microstrip line

made on 0.025 inch thick alumina carrier. The

input reference plane is at the end of the gate

lead. The output reference plane is at the end

of the drain lead.

S21

MSG

MAG

20

10

0

-10

-20

0

2

4

6

8

10 12 14 16 18

FREQUENCY (GHz)

Figure 63. MSG/MAG & |S21|²vs. Frequency

at 5.5V 200mA.

18

ATF-501P8 Typical Scattering Parameters, V_DS= 5.5V, I_DS= 360 mA

Freq.

GHz

S₁₁

S₂₁

S₁₂

S₂₂

MSG/MAG

dB

K

Mag. Ang.

dB

Mag. Ang.

dB

Mag. Ang.

factor

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.5

2

2.5

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

0.904

0.910

0.912

0.907

0.909

0.907

0.909

0.906

0.904

0.900

0.905

0.900

0.904

0.897

0.902

0.899

0.893

0.886

0.867

0.871

0.854

0.855

0.845

0.842

0.833

0.826

-132.0

-156.2

-165.4

-170.7

-173.5

-176.1

-178.3

179.9

178.4

176.7

170.5

166.1

165.1

161.0

155.0

144.9

134.8

125.7

115.5

105.9

95.4

31.8

26.4

23.0

20.5

18.9

17.4

16.0

14.9

13.9

12.9

9.4

38.785

20.860

14.161

10.635

8.834

7.399

6.337

5.557

4.942

4.429

2.941

2.325

2.191

1.817

1.456

1.130

0.913

0.695

0.609

0.544

0.499

0.455

0.389

0.387

0.360

0.330

113.0

100.3

94.7

91.2

88.4

86.1

83.9

81.9

80.0

78.0

69.7

63.6

62.2

56.6

48.2

35.7

20.7

7.3

-39.2 0.011

-38.4 0.012

-37.7 0.013

-37.1 0.014

-36.5 0.015

-35.9 0.016

-35.4 0.017

-34.9 0.018

-34.4 0.019

-32.0 0.025

-30.8 0.029

-30.2 0.031

-29.1 0.035

-27.5 0.042

-24.9 0.057

-23.0 0.071

-22.3 0.077

-20.8 0.091

-19.6 0.105

-18.9 0.114

-17.5 0.133

-17.2 0.138

-15.7 0.164

-15.1 0.176

-14.3 0.192

-14.0 0.199

-13.2 0.220

-12.3 0.242

29.8

24.8

25.5

27.8

30.5

33.4

35.7

37.6

39.7

41.2

46.2

47.9

48.4

48.6

47.4

44.4

36.8

28.9

23.4

13.8

11.7

2.3

0.619

0.662

0.672

0.675

0.663

0.664

0.666

0.668

0.665

0.672

0.676

0.675

0.674

0.686

0.680

0.683

0.649

0.643

0.636

0.696

0.743

0.732

0.769

0.805

0.806

0.769

0.792

0.789

-159.9

-170.6

-175.3

-178.2

-179.5

178.9

177.6

176.2

175.5

174.3

170.1

166.5

163.9

160.2

155.1

148.5

146.9

135.8

119.1

117.1

106.1

92.6

35.5

32.4

30.4

28.8

27.7

26.7

25.7

25.1

24.4

23.7

18.4

16.2

15.5

14.0

12.0

9.9

8.0

6.0

4.5

3.1

2.4

1.4

0.0

0.198

0.338

0.459

0.571

0.666

0.741

0.808

0.901

0.943

1.008

1.150

1.225

1.254

1.278

1.329

1.267

1.264

1.359

1.402

1.470

1.447

1.439

1.589

1.436

1.323

1.371

1.502

1.436

1.457

7.3

6.8

5.2

3.3

1.1

-0.8

-3.2

-4.3

-5.3

-6.0

-6.8

-8.2

-8.9

-9.6

-3.7

-16.0

-23.1

-31.7

-43.4

-49.9

-61.2

-68.7

-72.5

-82.1

-87.9

85.0

75.0

65.6

56.8

48.1

40.7

32.6

25.5

-4.6

89.3

79.4

70.0

66.4

52.1

39.4

29.7

-11.0

-20.4

-29.6

-36.7

-44.6

-51.8

-0.2

-0.3

-1.3

-2.2

-2.4

-3.1

-10.0 0.315

-10.2 0.309

-10.5 0.299

40

30

Notes:

1. S parameter is measured on a microstrip line

made on 0.025 inch thick alumina carrier. The

input reference plane is at the end of the gate

lead. The output reference plane is at the end

of the drain lead.

S21

MSG

MAG

20

10

0

-10

-20

0

2

4

6

8

10 12 14 16 18

FREQUENCY (GHz)

Figure 64. MSG/MAG & |S21|²vs.

Frequency at 5.5V 360mA.

19

Device Models

Refer to Agilent’s Web Site

www.agilent.com/view/rf

Ordering Information

Part Number

No. of Devices

Container

ATF-501P8-TR1

ATF-501P8-TR2

ATF-501P8-BLK

3000

10000

100

7” Reel

13”Reel

antistatic bag

2x 2 LPCC (JEDEC DFP-N) Package Dimensions

D1

D

pin1

P

pin1

8

7

1

2

E

e

E1

0PX

6

5

R

3

4

b

L

Top View

Bottom View

A1

A

A2

End View

DIMENSIONS

SYMBOL

MIN.

0.70

0

NOM.

0.75

MAX.

0.80

A

A1

A2

b

0.02

0.05

0.203 REF 0.203 REF

0.203 REF

0.275

2.1

0.225

1.9

0.25

2.0

D

D1

E

0.65

0.80

0.95

1.9

2.0

2.1

E1

e

1.45

1.6

1.75

0.50 BSC

DIMENSIONS ARE IN MILLIMETERS

20

PCB Land Pattern and Stencil Design

2.72 (107.09)

0.63 (24.80)

0.22 (8.86)

0.32 (12.79)

2.80 (110.24)

0.70 (27.56)

0.25 (9.84)

PIN 1

0.50 (19.68)

φ0.20 (7.87)

1.54 (60.61)

1.60 (62.99)

0.28 (10.83)

+

Solder

mask

0.25 (9.74)

0.63 (24.80)

0.60 (23.62)

RF

transmission

line

0.72 (28.35)

0.80 (31.50)

0.15 (5.91)

0.55 (21.65)

Stencil Layout (top view)

PCB Land Pattern (top view)

Notes:

Typical stencil thickness is 5 mils.

Measurements are in millimeters (mils).

Device Orientation

4 mm

REEL

8 mm

0PX

CARRIER

TAPE

USER

FEED

DIRECTION

COVER TAPE

21

Tape Dimensions

P₀

P₂

P

D

E

F

W

+

D₁

T_t

t₁

K₀

10° Max

A₀

B₀

DESCRIPTION

SYMBOL

SIZE (mm)

SIZE (inches)

CAVITY

LENGTH

WIDTH

A

0

2.30 0.05

1.00 0.05

4.00 0.10

1.00 + 0.25

0.091 0.004

0.039 0.002

0.157 0.004

0.039 + 0.002

B

0

DEPTH

K

0

P

PITCH

BOTTOM HOLE DIAMETER

D

1

PERFORATION

CARRIER TAPE

DIAMETER

PITCH

D

1.50 0.10

4.00 0.10

1.75 0.10

0.060 0.004

0.157 0.004

0.069 0.004

P

0

POSITION

E

WIDTH

W

8.00 + 0.30

8.00 – 0.10

0.254 0.02

0.315 0.012

0.315 0.004

0.010 0.0008

THICKNESS

t

1

COVER TAPE

DISTANCE

WIDTH

C

5.4 0.10

0.205 0.004

TAPE THICKNESS

T

t

0.062 0.001

0.0025 0.0004

CAVITY TO PERFORATION

(WIDTH DIRECTION)

F

3.50 0.05

2.00 0.05

0.138 0.002

0.079 0.002

CAVITY TO PERFORATION

(LENGTH DIRECTION)

P

2

www.agilent.com/semiconductors

For product information and a complete list of

distributors, please go to our web site.

For technical assistance call:

Americas/Canada: +1 (800) 235-0312 or

(916) 788-6763

Europe: +49 (0) 6441 92460

China: 10800 650 0017

Hong Kong: (65) 6756 2394

India, Australia, New Zealand: (65) 6755 1939

Japan: (+81 3) 3335-8152(Domestic/International), or

0120-61-1280(Domestic Only)

Korea: (65) 6755 1989

Singapore, Malaysia, Vietnam, Thailand, Philippines,

Indonesia: (65) 6755 2044

Taiwan: (65) 6755 1843

Data subject to change.

August 24, 2004

5988-9767EN


型号：	ATF501P8
厂家：	HEWLETT-PACKARD
描述：	Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package 安捷伦ATF- 501P8高线性增强模式伪HEMT采用2x2 mm2的LPCC包装 PC
文件：	总22页 (文件大小：184K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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