HSB1109 [HSMC]
PNP EPITAXIAL PLANAR TRANSISTOR; PNP外延平面晶体管
| 型号： | HSB1109 |
| 厂家： | 
HI-SINCERITY MOCROELECTRONICS |
| 描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总3页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : HE6607
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 1/3
HI-SINCERITY
MICROELECTRONICS CORP.
HSB1109
PNP EPITAXIAL PLANAR TRANSISTOR
Features
• Low frequency high voltage amplifier
• Complementary pair with HSD1609
TO-126ML
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................. 1.25 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -160 V
BVCEO Collector to Emitter Voltage................................................................................. -160 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current....................................................................................................... -100 mA
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
-160
-160
-5
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA
V
V
IC=-10uA
IC=-1mA
IE=-10uA
-10
-2
-1.5
320
-
VCB=-140V
IC=-30mA, IB=-3mA
IC=-10mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-1mA, VCE=-5V
IC=-10mA, VCE=-5V
VCB=-10V, f=1MHz
-
60
30
-
-
140
5.5
-
-
MHz
pF
Cob
-
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank
B
C
D
Range
60-120
100-200
160-320
HSB1109
HSMC Product Specification
Spec. No. : HE6607
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 2/3
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
1000
125oC
75oC
25oC
125oC
25oC
100
100
75oC
CE
hFE @ V =5V
CE(sat)
V
C
B
@ I =10I
10
10
0.1
1
10
100
1
10
100
C
Collector Current-I (mA)
C
Collector Current-I (mA)
ON Voltage & Collector Current
Capacitance & Reverse-Biased Voltage
1000
100
25oC
75oC
10
125oC
Cob
BE(ON)
V
CE
@ V =5V
1
100
0.1
1
10
100
0.1
1
10
100
C
Reverse Biased Voltage (V)
Collector Current-I (mA)
Safe Operating Area
Cutoff Frequency & Collector Current
1000
1
0.1
T
P =1 ms
100
CE
fT @ V =5V
T
P =100 ms
0.01
0.001
T
P =1 s
10
1
10
100
1000
1
10
100
1000
Collector Current (mA)
Forward Voltage (V)
HSB1109
HSMC Product Specification
Spec. No. : HE6607
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 3/3
HI-SINCERITY
MICROELECTRONICS CORP.
TO-126ML Dimension
Marking:
H
S B
A
B
1 1 0 9
Rank
Date Code
Control Code
D
F
O
H
E
3
2
1
C
N
Style: Pin 1.Emitter 2.Collector 3.Base
I
G
J
M
L
K
3-Lead TO-126ML Plastic Package
HSMC Package Code: D
*: Typical
Inches
Millimeters
Min.
Inches
Max.
Millimeters
DIM
DIM
Min.
Max.
Max.
3.70
0.69
1.12
1.52
3.12
2.12
1.25
1.42
Min.
-
Min.
Max.
*4.56
0.84
15.00
7.62
3.75
4.12
2.14
A
B
C
D
E
F
0.1356
0.0170
0.0344
0.0501
0.1131
0.0737
0.0294
0.0462
0.1457
0.0272
0.0444
0.0601
0.1231
0.0837
0.0494
0.0562
3.44
0.43
0.87
1.27
2.87
1.87
0.74
1.17
I
*0.1795
0.0331
0.5906
0.3003
0.1478
0.1625
0.0842
-
J
0.0268
0.5512
0.2903
0.1378
0.1525
0.0740
0.68
14.00
7.37
3.50
3.87
1.88
K
L
M
N
O
G
H
Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB1109
HSMC Product Specification
相关型号：
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