HSD880 [HSMC]
NPN EPITAXIAL PLANAR TRANSISTOR; NPN外延平面晶体管
| 型号： | HSD880 |
| 厂家： | 
HI-SINCERITY MOCROELECTRONICS |
| 描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总3页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : HE6729-B
Issued Date : 1992.11.25
Revised Date : 1999.08.01
Page No. : 1/3
HI-SINCERITY
MICROELECTRONICS CORP.
HSD880
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD880 is designed for low frequency power amplifier
applications.
Features
• High DC Current Gain
• High Power Dissipation: PC=30W at TC=25°C
(Ta=25°C)
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 30 W
Total Power Dissipation (Ta=25°C) ................................................................................... 1.5 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... 60 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage........................................................................................... 7 V
IC Collector Current.............................................................................................................. 3 A
IB Base Current ................................................................................................................. 0.5 A
(Ta=25°C)
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=1mA, IE=0
IC=50mA, IB=0
VCB=60V, IE=0
VEB=7V, IC=0
IC=3A, IB=0.3A
IC=0.5A, VCE=5V
IC=0.5A, VCE=5V
IC=500mA, VCE=5V
BVCBO
BVCEO
ICBO
60
60
-
-
-
-
60
-
-
-
-
-
-
-
-
3
-
-
V
V
uA
uA
V
100
100
1
1
300
-
IEBO
*VCE(sat)
*VBE(on)
*hFE
V
fT
MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank
O
Y
GR
150-300
Range
60-120
100-200
HSMC Product Specification
Spec. No. : HE6729-B
Issued Date : 1992.11.25
Revised Date : 1999.08.01
Page No. : 2/3
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
100
10
10000
1000
100
CE
hFE @ V =5V
BE(sat)
C
B
V
@ I =10I
CE(sat)
V
C
B
@ I =10I
1
10
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current (mA)
Collector Current (mA)
On Voltage & Collector Current
Switching Time & Collector Current
10000
10.00
1.00
0.10
0.01
CC
V
C
B1
B2
=30V, I =10I = -10I
Tstg
Ton
1000
Tf
BE(on)
CE
@ V =5V
V
100
0.1
1.0
10.0
1
10
100
Collector Current (mA)
1000
10000
Collector Current (A)
Capacitance & Reverse-Biased Voltage
Safe Operating Area
100000
10000
1000
100
1000
100
T
P =1ms
T
P =100ms
T
P =1s
10
Cob
10
1
0.1
1
10
100
1
10
100
1000
CE
Reverse-Biased Voltage (V)
Forward Voltage-V (V)
HSMC Product Specification
Spec. No. : HE6729-B
Issued Date : 1992.11.25
Revised Date : 1999.08.01
Page No. : 3/3
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking :
A
B
H
D
E
C
HSMC Logo
Part Number
Date Code
Product Series
Rank
Style : Pin 1.Base 2.Collector 3.Emitter
K
M
I
3
N
G
2
1
4
P
O
3-Lead TO-220AB Plastic Package
HSMC Package Code : E
*:Typical
Inches
Min. Max.
Millimeters
Min. Max.
Inches
Millimeters
Min. Max.
DIM
DIM
Min.
Max.
A
B
C
D
E
G
H
0.2197 0.2949
0.3299 0.3504
5.58
8.38
4.40
1.15
0.35
9.66
-
7.49
8.90
4.70
1.39
0.60
I
-
*0.1508
-
*3.83
0.95
1.40
*2.54
14.27
15.87
K
M
N
O
P
0.0295 0.0374
0.0449 0.0551
0.75
1.14
-
12.70
14.48
0.1732
0.185
0.0453 0.0547
0.0138 0.0236
0.3803 0.4047
-
*0.1000
0.5000 0.5618
0.5701 0.6248
10.28
*16.25
-
*0.6398
Notes : 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
HSMC Product Specification
相关型号：
HSD882S_06
The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.
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