BSR33 [HTSEMI]
TRANSISTOR (PNP); 晶体管（ PNP ）
| 型号： | BSR33 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (PNP) |
| 文件： | 总1页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BRS33
TRANSISTOR (PNP)
SOT-89-3L
FEATURES
z
z
z
Low Voltage
1. BASE
High Current
2. COLLECTOR
3. EMITTER
Complement to BSR43
AAPLICATIONS
z
Medium Power Transistor
MARKING:BR4
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
-90
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
-80
V
-5
V
Collector Current
-1
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
500
mW
℃/W
℃
RθJA
Tj
250
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
-90
-80
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-100µA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-100µA,IC=0
V
V
ICBO
IEBO
VCB=-60V,IE=0
-100
-100
nA
nA
Emitter cut-off current
VEB=-5V,IC=0
hFE(1)
hFE(2)
hFE(3)
*
*
*
VCE=-5V, IC=0.1mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-500mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-10V,IC=-50mA, f=100MHz
30
100
50
DC current gain
300
-0.25
-0.5
-1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
*
V
VBE(sat)
fT
*
-1.2
V
100
MHz
Transition frequency
*Pulse test
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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