DTA114YSA [HTSEMI]

TRANSISTOR(PNP); 晶体管( PNP )
DTA114YSA
型号: DTA114YSA
厂家: SHENZHEN JIN YU SEMICONDUCTOR CO., LTD.    SHENZHEN JIN YU SEMICONDUCTOR CO., LTD.
描述:

TRANSISTOR(PNP)
晶体管( PNP )

晶体 晶体管
文件: 总2页 (文件大小:498K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DTA114YE/DTA114YUA/DTA114YKA/DTA114YSA/DTA114YCA  
TRANSISTOR(PNP)  
FEATURES  
1. Built-in bias resistors enable the configuration of an inverter circuit without  
connecting external input resistors(see equivalent circuit).  
2. The bias resistors consist of thin-film resistors with complete isolation to  
allow positive biasing of the input.They also have the advantage of almost  
completely eliminating parasitic effects.  
3. Only the on/off conditions need to be set for operation, making device  
design easy.  
PIN CONNENCTIONS AND MARKING  
DTA114YE  
DTA114YUA  
SOT-323  
DTA114YCA  
SOT-23  
Addreviated symbol: 54  
SOT-523  
Addreviated symbol: 54  
DTA114YKA  
SOT-23-3L  
Addreviated symbol: 54  
Addreviated symbol: 54  
DTA114YSA  
TO-92S  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  
DTA114YE/DTA114YUA/DTA114YKA/DTA114YSA/DTA114YCA  
Absolute maximum ratings(Ta=25)  
Limits (DTA114Y)  
Parameter  
Symbol  
Unit  
E
UA  
KA  
CA  
SA  
Supply voltage  
VCC  
VIN  
-50  
V
V
Input voltage  
-40to+6  
-70  
IO  
mA  
mA  
mW  
Output current  
IC(Max.)  
PC  
-100  
Power dissipation  
150  
200  
300  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55 to+ 150  
)
Electrical characteristics (Ta=25℃  
Parameter  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Min.  
Typ  
Max.  
Unit  
Conditions  
VCC=-5V ,IO=-100µA  
VO=-0.3V ,IO=-1mA  
IO/II=-5mA/-0.25mA  
VI=-5V  
-0.3  
Input voltage  
V
-1.4  
Output voltage  
Input current  
-0.3  
-0.88  
-0.5  
V
mA  
µA  
Output current  
DC current gain  
Input resistance  
Resistance ratio  
Transition frequency  
IO(off)  
GI  
VCC=-50V ,VI=0  
VO=-5V ,IO=-5mA  
68  
7
R1  
10  
4.7  
250  
13  
K  
R2/R1  
fT  
3.7  
5.7  
MHz  
VO=-10V ,IO=5mA,f=100MHz  
Typical Characteristics  
2
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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