EMH9 [HTSEMI]
digital transistor (NPN+ NPN); 数字晶体管（ NPN + NPN ）
| 型号： | EMH9 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | digital transistor (NPN+ NPN) |
| 文件： | 总1页 (文件大小：367K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMH9
digital transistor (NPN+NPN)
SOT-563
FEATURES
z
z
z
Two DTC114Ys chips in a package.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
1
External circuit
MARKING：H9
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Unit
Limits
Supply voltage
Input voltage
VCC
VIN
50
-6~40
70
V
V
IO
Output current
mA
IC(MAX)
Pd
100
Power dissipation
Junction temperature
Storage temperature
150(TOTAL)
150
mW
Tj
℃
℃
Tstg
-55~150
Electrical characteristics (Ta=25℃)
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
Min.
Typ
Max.
Unit
Conditions
0.3
VCC=5V ,IO=100µA
VO=0.3V ,IO=1 mA
IO/II=5mA/0.25mA
VI=5V
Input voltage
V
1.4
Output voltage
Input current
0.3
0.88
0.5
V
mA
μA
Output current
IO(off)
GI
VCC=50V, VI=0
VO=5V ,IO=5mA
DC current gain
Input resistance
Resistance ratio
Transition frequency
68
7
R1
10
4.7
250
13
KΩ
R2/R1
fT
3.7
5.7
MHz
VCE=10V ,IE=-5mA,f=100MHz
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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