KTC3879 [HTSEMI]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | KTC3879 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总1页 (文件大小：485K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTC3879
TRANSISTOR (NPN)
SOT–23
FEATURES
High Power Gain
APPLICATIONS
High Frequency Application
HF,VHF Band Amplifier Application
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
35
30
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
4
Collector Current
50
mA
mW
℃/W
℃
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
150
PC
RΘJA
Tj
833
150
Storage Temperature
Tstg
-55～+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
V(BR)CBO
IC=100µA, IE=0
IC=100µA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
VCE=25V, IB=0
VEB=4V, IC=0
35
30
4
V
Collector-base breakdown voltage
V(BR)CEO
V(BR)EBO
ICBO
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
0.1
0.2
1
µA
µA
µA
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
VCE=12V, IC=2mA
IC=10mA, IB=1mA
IC=10m A, IB=1mA
40
240
0.4
1
DC current gain
VCE(sat)
VBE(sat)
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
fT
VCE=10V,IC=1mA
100
MHz
CLASSIFICATION OF hFE
RANK
RANGE
R
O
Y
120–240
RY
40–80
RR
70–140
RO
MARKING
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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