H1246 [HUASHAN]
NPN SILICON TRANSISTOR; NPN硅晶体管
| 型号： | H1246 |
| 厂家： | 
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
| 描述： | NPN SILICON TRANSISTOR |
| 文件： | 总3页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN S I L I C O N T R A N S I S T O
Shantou Huashan Electronic Devices Co.,Ltd.
H1246
█ POWER SUPPLIES，RELAY DRIVERS，
LAMP DRIVERS，ELECTRICAL EQUIPMENT
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-92
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………750mW
VCBO——Collector-Base Voltage………………………………30V
VCEO——Collector-Emitter Voltage……………………………25V
VEBO——Emitter-Base Voltage………………………………6V
IC——Collector Current……………………………………2A
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Min
Typ
Max Unit
Test Conditions
BVCBO
BVCEO
BVEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
ICBO
30
25
6
V
V
V
IC=10μA, IE=0
IC=1mA, IB=0
IE=10μA，IC=0
VCE=2V, IC=100mA
VCE=2V, IC=1.5A *
IC=1.5A, IB=75mA *
IC=1.5A, IB=75mA *
100
560
65 130
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
0.18 0.4 V
0.85 1.2 V
100 nA VCB=20V, IE=0
IEBO
fT
Cob
Emitter Cut-off Current
Current Gain-Bandwidth Product
100 nA VEB=4V, IC=0
MHz VCE=10V, IC=50mA
pF VCB=10V, IE=0，f=1MHz
150
19
Output Capacitance
* pulse
█ hFE Classification
R
S
T
U
100—200
140—280
200—400
280—560
Shantou Huashan Electronic Devices Co.,Ltd.
H1246
Shantou Huashan Electronic Devices Co.,Ltd.
H1246
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