S2300EC [HUAXINAN]
SIDACtor Protection Thyristors;
| 型号： | S2300EC |
| 厂家： | 
HuaXinAn Electronics CO.,LTD |
| 描述： | SIDACtor Protection Thyristors 双向触发二极管 |
| 文件： | 总6页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
S2301
Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIEWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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S2303
S2303是SiC功率MOSFET。其特征是高耐压、低导通电阻、高速开关。关于Bare Die的销售请向本公司销售部门咨询规格。现在尚未进行网络销售及经由网络公司进行销售。 SiC支持页面评估板 应用实例罗姆SiC器件 什么是SiC？电子基础Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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S2303-G
Trans Voltage Suppressor Diode, 300W, 3.3V V(RWM), Unidirectional, 2 Element, Silicon, LEAD FREE PACKAGE-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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S2305
Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 2 Element, Silicon, SOT-23, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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S2305
S2305是基于SiC的平面型MOSFET。其特征是高耐压、低导通电阻、高速开关。关于Bare Die的销售请向本公司销售部门咨询规格。现在尚未进行网络销售及经由网络公司进行销售。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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S2305-G
Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 2 Element, Silicon, LEAD FREE PACKAGE-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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S2305GWA
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S2305IDR
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S2306
S2306是基于SiC的平面型MOSFET。其特征是高耐压、低导通电阻、高速开关。关于Bare Die的销售请向本公司销售部门咨询规格。现在尚未进行网络销售及经由网络公司进行销售。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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S2307
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S2307
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S2307AMP10NF
Attractive stylingWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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LSTD
S2307AMP10SMF
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LSTD
S2307AMP10TNF
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LSTD
S2307MP10SMF
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LSTD
S2307MP10TNF
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LSTD
S2308
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S2308_16
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S230C
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S2312-G
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SENSITRON
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