HY060N08P [HUAYI]
N-Channel Enhancement Mode MOSFET;
| 型号： | HY060N08P |
| 厂家： | 
HUAYI MICROELECTRONICS CO.,LTD. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总13页 (文件大小：4338K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY060N08P/M/B/MF
N-Channel Enhancement Mode MOSFET
Pin Description
F
eatures
·
85V/100A
RDS(ON) = 5.0 mW (typ.) @ VGS=10V
·
·
·
100% avalanche tested
S
D
G
Reliable and Rugged
S
D
G
TO-220FB-3S
TO-220FB-3L
Lead Free andGreenDevicesAvailable
(RoHS Compliant)
S
D
G
S
D
G
pplications
A
TO-263-2L
TO-220MF-3L
D
Switching application
·
·
Power Management for Inverter Systems.
G
N-ChannelMOSFET
S
Ordering and Marking Information
Package Code
P : TO-220FB-3L
P
M
M : TO-220FB-3S
MF: TO-220MF-3L
HY060N08
HY060N08
ÿ
B : TO-263-2L
ÿ
YYXXXJWW G
YYXXXJWW G
B
MF
Assembly Material
Date Code
HY060N08
HY060N08
ÿ
ÿ
YYXXXJWW G
YYXXXJWW G
YYXXX WW
G : Lead Free Device
Note:
termination finish; which are fully compliant with RoHS.
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.
lead-free products contain molding compounds/die attach materials and 100% matte tin plate
HOOYI
lead-free products meet or exceed the lead-free
HOOYI
HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
HOOYI
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151223
1
HY060N08P/M/B/MF
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
85
±20
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
TSTG
IS
-55 to175
100
TC=25°C
Mounted on Large Heat Sink
IDM
Pulsed Drain Current *
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
305*
100
63
A
A
ID
Continuous Drain Current
156
78
PD
Maximum Power Dissipation
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
0.96
62.5
RqJC
RqJA
°C/W
Avalanche Ratings
EAS Avalanche Energy, Single Pulsed
Note：
L=0.5mH
120***
mJ
*
Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=68V
Electrical Characteristics (TC = 25°C Unless Otherwise Noted)
HY060N08
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
85
-
-
-
1
V
VGS=0V, IDS=250mA
VDS=85V, VGS=0V
-
-
IDSS Zero Gate Voltage Drain Current
mA
TJ=85°C
-
10
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)
Diode Characteristics
2.0
-
3.0
-
4.0
±100
6.0
V
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
nA
*
Drain-Source On-state Resistance VGS=10V, IDS=40A
-
5.0
mW
VSD
trr
*
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=40A, VGS=0V
-
-
-
0.8
29
1
-
V
ns
nC
ISD=20A, dlSD/dt=500A/ms
Qrr
161
-
2
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HY060N08P/M/B/MF
Electrical Characteristics (Cont.) (TC = 25°C Unless Otherwise Noted)
HY060N08
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
RG
Ciss
Coss
Crss
td(ON)
Tr
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
-
-
-
-
-
1.3
3140
431
43
-
-
-
-
-
-
-
-
W
Input Capacitance
VGS=0V,
VDS=42V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
13.5
11
VDD=42V, RG= 3 W,
IDS =20A, VGS=10V,
ns
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
32
11
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
45
12
8
-
VDS=68V, VGS=10V,
IDS=20A
nC
-
-
Note * : Pulse test ; pulse width £300ms, duty cycle£2%.
.
3
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HY060N08P/M/B/MF
Typical Operating Characteristics
Power Dissipation
Drain Current
210
180
160
180
150
120
90
140
120
100
80
limited by package
60
60
40
30
20
TC=25oC
0
TC=25oC,VG=10V
0
0
20 40 60 80 100 120 140 160 180 200
0
20 40 60 80 100 120 140 160 180 200
Tc -
Temperature (°C)
Tc-Case Temperature (°C)
Case
Safe Operation Area
600
100
10us
100us
1ms
Rds(on) Limit
10
1
DC
10ms
TJ(Max) =175oC
T =25oC
0.1
0.01
0.1
1
10
100 500
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.96°C/W
PD
0.1
0.01
Single Pulse
Ton
T
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Normalized Maximum Transient Thermal Impedance
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4
HY060N08P/M/B/MF
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
160
140
120
7.0
10V
6V
5V
6.0
5.0
100
V
GS =10V
80
60
4.5V
4V
40
20
0
4.0
3.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
20
40
60
80
100
VDS - Drain-Source Voltage (V)
ID -Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
12
IDS=40A
IDS =250mA
10
8
6
4
2
0
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150 175
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
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5
HY060N08P/M/B/MF
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
160
100
VGS = 10V
IDS = 40A
Tj=175oC
10
1
Tj=25oC
RON@Tj=25oC: 5.0mW
0.1
-50 -25
0
25 50 75 100 125 150 175
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
10
Frequency=1MHz
VDS= 68V
IDS= 20A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
0
10 20 30 40 50 60 70 80
0
6
12 18 24 30 36 42 48
VDS - Drain - Source Voltage (V)
QG -Gate Charge (nC)
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6
HY060N08P/M/B/MF
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01W
tAV
Avalanche Test Circuit and Waveforms
VDS
RD
V
DS
DUT
90%
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
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7
HY060N08P/M/B/MF
Package Information
TO-220FB-3L
SYMBOL MIN
NOM
MAX
MIN
NOM
MAX
4.40
1.27
2.35
0.77
1.17
0.48
4.57 4.70 0.173 0.180 0.185
1.30 1.33 0.050 0.051 0.052
2.40 2.50 0.093 0.094 0.098
0.80 0.90 0.030 0.031 0.035
1.27 1.36 0.046 0.050 0.054
0.50 0.56 0.019 0.020 0.022
A
A1
A2
b
b2
c
15.40 15.60 15.80 0.606 0.614 0.622
D
9.00
0.05
9.80
-
9.10 9.20 0.354 0.358 0.362
0.10 0.20 0.002 0.004 0.008
10.00 10.20 0.386 0.394 0.402
D1
DEP
E
E1
E2
8.70
-
-
0.343
-
9.80
10.00 10.20 0.386 0.394 0.402
2.54 BSC
5.08 BSC
6.50 6.60
0.100 BSC
0.200 BSC
e
e1
H1
L
6.40
0.252 0.256 0.260
12.75 13.50 13.65 0.502 0.531 0.537
-
3.10 3.30
2.50 REF
-
0.122 0.130
0.098 REF
L1
L2
P
3.50
3.50
2.73
5°
3.60 3.63
3.60 3.63
2.80 2.87
0.138 0.142 0.143
0.138 0.142 0.143
0.107 0.110 0.113
P1
Q
7°
3°
3°
9°
5°
5°
5°
1°
1°
7°
3°
3°
9°
5°
5°
θ1
θ2
θ3
1°
1°
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8
HY060N08P/M/B/MF
TO-220FB-3S
c
SYMBOL MIN
NOM
MAX
4.37
4.57 4.77
1.30 1.45
2.40 2.60
0.80 0.95
1.27 1.47
0.50 0.65
15.60 16.10
9.10 9.40
A
A1
A2
b
b2
c
1.25
2.20
0.70
1.17
0.40
15.10
D
D1
8.10
5.50
-
-
D2
E
9.70
7.00
10.00 10.30
E3
-
-
2.54 BSC
e
5.08 BSC
e1
H1
L
L1
P
6.25
6.80
-
6.50 6.85
7.00 7.20
3.10 3.40
3.60 3.80
2.80 3.00
3.40
2.60
Q
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9
HY060N08P/M/B/MF
TO-263-2L
MM
NOM
4.57
INCH
NOM
0.180
0.050
0.106
0.004
0.032
0.050
0.015
0.343
0.400
0.398
SYMBOL
MIN
4.40
1.22
2.59
0.00
0.77
1.20
0.34
8.60
10.00
10.00
MAX
4.70
1.32
2.79
0.20
0.90
1.36
0.47
8.80
10.26
10.20
MIN
0.173
0.048
0.102
0.000
0.030
0.047
0.013
0.339
0.394
0.394
MAX
0.185
0.052
0.110
0.008
0.035
0.054
0.019
0.346
0.404
0.402
A
A1
A2
A3
b
1.27
2.69
0.10
0.813
1.270
0.381
8.70
b1
c
D1
E
10.16
10.10
E2
e
2.5 BSC
0.100 BSC
4
H
14.70
1.17
2.00
1.45
15.10
1.27
2.30
1.55
15.50
1.40
2.60
1.70
0.579
0.046
0.079
0.057
0.594
0.050
0.091
0.061
0.610
0.055
0.102
0.067
H2
L
L1
L2
L4
2.50 REF
0.25 BSC
0.098 REF
0.010 BSC
0°
5°
5°
8°
9°
0°
5°
5°
7°
8°
1
2
7°
3°
9°
5°
1°
5°
1°
3°
ΦP1
DEP
1.40
0.05
1.50
0.10
1.60
0.20
0.055
0.002
0.059
0.004
0.063
0.008
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10
HY060N08P/M/B/MF
TO-220MF-3L
MM
SYMBOL
MIN
NOM
10.16
10.04
9.46
4.70
2.54
0.56
2.76
1.00REF
0.50
15.87
9.40REF
6.70REF
2.54BSC
MAX
10.46
10.34
9.66
4.90
2.74
E
E1
E2
A
A1
A2
A4
A5
c
D
Q
H1
e
9.86
9.76
9.26
4.50
2.34
30
0.
2.63
60
0.
2.89
0.45
15.47
0.60
16.27
P
3.06
12.58
2.81
7.55
1.40
0.95
3.30
3°
3.18
12.98
2.93
7.80
1.50
1.00
3.45
5°
45°
0.10
1.50
13.90
3.30
5.40
8.00
7.00
1.35
1.28
0.80
0.70
0.50REF
3.40
13.38
3.05
8.05
1.60
1.05
3.60
7°
L
L1
L2
P1
P2
P3
θ1
θ2
DEP
F1
F2
F3
F4
G
G1
G3
b1
b2
K1
R
-
-
0.05
1.00
13.50
3.15
5.15
7.70
6.70
1.25
1.23
0.75
0.65
0.15
2.00
14.30
3.45
5.65
8.30
7.30
1.45
1.38
0.90
0.75
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11
HY060N08P/M/B/MF
Devices Per Unit
Package Type
TO-220FB-3L
TO-220FB-3S
TO-263-2L
Unit
Tube
Tube
Tube
Tube
Quantity
50
50
50
50
TO-220MF-3L
Classification Profile
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12
HY060N08P/M/B/MF
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
Temperature min (Tsmin
)
Temperature max (Tsmax
)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
3 °C/second max.
3°C/second max.
Liquidous temperature (TL)
Time at liquidous (tL)
183 °C
60-150 seconds
217 °C
60-150 seconds
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (tP)** within 5°C of the specified
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
Time 25°C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
350
Package
Thickness
Volume mm3
<350
<2.5 mm
235 °C
220 °C
220 °C
220 °C
³ 2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
350-2000
260 °C
Volume mm3
<350
260 °C
260 °C
250 °C
>2000
260 °C
245 °C
245 °C
1.6 mm – 2.5 mm
³ 2.5 mm
250 °C
245 °C
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22, B102
Description
5 Sec, 245°C
HOLT
PCT
TCT
JESD-22, A108
JESD-22, A102
JESD-22, A104
1000 Hrs, Bias @ 125°C
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
Customer Service
Worldwide Sales and Service: sales@hooyi.cc
Technical Support: Technology@hooyi.cc
Xi’an Hooyi Semiconductor Technology Co., Ltd.
East Side of 2# Plant,No.105,5th Fengcheng Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hooyi.cc
Web net: www.hooyi.cc
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13
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