HY1506B [HUAYI]

N-Channel Enhancement Mode MOSFET;


型号：	HY1506B
厂家：	HUAYI MICROELECTRONICS CO.,LTD.
描述：	N-Channel Enhancement Mode MOSFET
文件：	总12页 (文件大小：584K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HY1506P/I/B

N-Channel Enhancement Mode MOSFET

Features

Pin Description

•

60V/55A,

R_DS(ON)=10.5 m(typ.) @ V_GS=10V

Avalanche Rated

•

Reliable and Rugged

Lead Free and GreenDevicesAvailable

(RoHS Compliant)

TO-262-3L

TO-263-2L

TO-220FB-3L

Applications



Power Management for Inverter Systems.

N-Channel MOSFET

Ordering and Marking Information

Package Code

P : TO-220FB-3L

B: TO-263-2L

I: TO-262-3L

HY1506 HY1506 HY1506

Assembly Material

G : Lead Free Device

Date Code

YYXXX WW

YYXXXJWW G YYXXXJWW G YYXXXJWW G

Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate

Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-

Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed

900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to

this pr-oduct and/or to this document at any time without notice.

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HY1506P/I/B

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

±25

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

175

°C

T_STG

I_S

-55 to 175

T_C=25°C

Mounted on Large Heat Sink

I_DM

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

220**

Pulsed Drain Current *

I_D

Continuous Drain Current

100

P_D

Maximum Power Dissipation

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

Drain-Source Avalanche Energy

1.5

°C/W

R_JC

R_JA

E_AS

62.5

200***

L=0.5mH

Note：

Repetitive rating ; pulse width limiited by junction temperature

** Drain current is limited by junction temperature

*** VD=48V

Electrical Characteristics (T_C= 25C Unless Otherwise Noted)

HY1506

Symbol

Parameter

Test Conditions

Unit

Min. Typ. Max.

Static Characteristics

BV_DSSDrain-Source Breakdown Voltage

I_DSSZero Gate Voltage Drain Current

V_GS(th)Gate Threshold Voltage

V_GS=0V, I_DS=250A

V_DS=60V, V_GS=0V

A

T_J=85°C

1.0

1.6

3.0

±100

13.5

V_DS=V_GS, I_DS=250A

V_GS=±25V, V_DS=0V

V_GS=10V, I_DS=28A

V_GS=4.5V, I_DS=28A

I_GSS

Gate Leakage Current

10.5

13.5

m

R_DS(ON)

Drain-Source On-state Resistance

Diode Characteristics

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

I_SD=28A, V_GS=0V

0.8

1.1

I_DS=28A, dl_SD/dt=100A/s

Q_rr

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Electrical Characteristics (Cont.) ^(T_C^{= 25C Unless Otherwise Noted)}

HY1506

Symbol

Parameter

Test Conditions

Unit

Min. Typ. Max.

Dynamic Characteristics

R_G

C_iss

C_oss

C_rss

Gate Resistance

V_GS=0V,V_DS=0V,F=1MHz

1.2

3522

666

172



Input Capacitance

V_GS=0V,

V_DS=25V,

Frequency=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

t_d(ON)Turn-on Delay Time

T_rTurn-on Rise Time

t_d(OFF)Turn-off Delay Time

T_fTurn-off Fall Time

Gate Charge Characteristics

V =30V, R = ,

I_DS=28A, V =10V,

Q_g

Q_gs

Q_gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DS=48V, V_GS=10V,

I_DS=28A

Note * : Pulse test ; pulse width 300s, duty cycle2%.

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Typical Operating Characteristics

Power Dissipation

Drain Current

120

100

T_C=25^oC

T_C=25^oC,V_G=10V

20 40 60 80 100 120 140 160 180 200

T^c-Case Temperature (°C)

T^c-

Temperature (°C)

Case

Safe Operation Area

400

100

100us

1ms

Rds(on) Limit

10ms

T_C=25^oC

0.1

400

0.1

100

V^DS- Drain - Source Voltage (V)

Thermal Transient Impedance

Duty = 0.5

0.2

0.1

0.05

0.02

0.01

Mounted on minimum pad

R_JA: 62.5 C/W

Single

0.001

0.1

0.0001

0.001

0.01

Square Wave Pulse Duration (sec)

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Typical Operating Characteristics (Cont.)

Output Characteristics

Drain-Source On Resistance

160

140

120

100

V_GS= 7,8,9,10V

V_GS=4.5V

5.5V

V_GS=10V

4.5V

V^DS- Drain-Source Voltage (V)

I^D- Drain Current (A)

Drain-Source On Resistance

Gate Threshold Voltage

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

I_DS=28A

I_DS=250A

-50 -25

25 50 75 100 125 150 175

V^GS- Gate - Source Voltage (V)

T^j- Junction Temperature (°C)

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Typical Operating Characteristics (Cont.)

Drain-Source On Resistance

Source-Drain Diode Forward

160

100

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

V_GS= 10V

I_DS= 28A

T_j=175^oC

T_j=25^oC

R_ON@T=_j25^oC:10.5m

0.1

0.0

-50 -25

25 50 75 100 125 150 175

0.3

0.6

0.9

1.2

1.5

T^j- Junction Temperature (°C)

V^SD- Source-Drain Voltage (V)

Capacitance

Gate Charge

5000

4500

4000

3500

3000

2500

Frequency=1MHz

Ciss

V_DS= 48V

I_DS= 28A

2000

1500

Coss

1000

500

Crss

10 15 20 25 30 35 40

V^DS- Drain - Source Voltage (V)

Q^G-Gate Charge (nC)

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Avalanche Test Circuit

Switching Time Test Circuit

Gate Charge Test Circuit

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HY1506P/I/B

Device Per Unit

Package Type

Unit

Quantity

TO-220FB-3L

Tube

Package Information

TO-220FB-3L

COMMON DIMENSIONS

NOM

4.57

SYMBOL

MIN

4.37

1.25

2.20

0.70

1.17

0.40

15.10

8.80

5.50

9.70

7.00

MAX

4.77

1.45

2.60

0.95

1.47

0.65

16.10

9.40

1.30

2.40

0.80

1.27

0.50

15.60

9.10

10.00

10.30

2.54 BSC

5.08 BSC

6.50

6.25

12.75

6.85

13.80

3.40

3.80

3.00

13.50

3.10

ΦP

3.40

2.60

3.60

2.80

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Device Per Unit

Package Type

Unit

Quantity

TO-262-3L

Tube

Package Information

TO-262-3L

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HY1506P/I/B

Device Per Unit

Package Type

Unit

Quantity

TO-263-2L

Reel

Package Information

TO-263-2L

COMMON DIMENSIONS

SYMBOL

MIN

4.37

1.22

2.49

NOM

4.57

1.27

2.69

0.13

0.81

1.27

0.38

8.7

MAX

4.77

1.42

2.89

0.25

0.96

1.47

0.53

8.9

0.7

1.17

0.3

8.5

6.6

9.86

7.06

10.16

10.36

2.54 BSC

15.1

1.27

2.3

14.7

1.07

15.5

1.47

2.6

1.4

1.55

0.25 BSC

5°

1.7

0°

9°

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Classification Profile

Classification Reflow Profiles

Profile Feature

Preheat & Soak

Sn-Pb Eutectic Assembly

Pb-Free Assembly

100 C

150 C

60-120 seconds

150 C

200 C

60-120 seconds

Temperature min (T_smin

)

Temperature max (T_smax

)

Time (T_sminto T_smax) (t_s)

Average ramp-up rate

(T_smaxto T_P)

3 C/second max.

3C/second max.

Liquidous temperature (T_L)

Time at liquidous (t_L)

183 C

60-150 seconds

217 C

60-150 seconds

Peak package body Temperature

(T_p)*

See Classification Temp in table 1

20** seconds

See Classification Temp in table 2

30** seconds

Time (t_P)** within 5C of the specified

classification temperature (T_c)

Average ramp-down rate (T_pto T_smax

)

6 C/second max.

6 minutes max.

8 minutes max.

Time 25C to peak temperature

* Tolerance for peak profile Temperature (T_p) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (t_p) is defined as a supplier minimum and a user maximum.

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Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

Volume mm³

Package

Thickness

Volume mm³

<350

≥350

<2.5 mm

235 C

220 C

2.5 mm

220 C

Table 2. Pb-free Process – Classification Temperatures (Tc)

Package

Thickness

<1.6 mm

Volume mm³

<350

Volume mm³

350-2000

260 C

Volume mm³

>2000

260 C

245 C

260 C

250 C

1.6 mm – 2.5 mm

2.5 mm

250 C

245 C

Reliability Test Program

Test item

SOLDERABILITY

Method

JESD-22, B102

JESD-22, A108

JESD-22, A102

JESD-22, A104

Description

5 Sec, 245C

168Hrs/500Hrs/1000Hrs, Bias@125C

 RH, 2atm, 121C

HTRB

PCT

TCT

96 Hrs, 100

500 Cycles, -55C~150C

Customer Service

Worldwide Sales and Service: sales@hymexa.com

Technical Support: Technology@hymexa.com

Xi'an Huayi Microelectronics Co., Ltd.

No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China

TEL: (86-029) 86685706

FAX: (86-029) 86685705

E-mail: sales@hymexa.com

Web net: www.hymexa.com

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