HY15P04V [HUAYI]

P-Channel Enhancement Mode MOSFET;


型号：	HY15P04V
厂家：	HUAYI MICROELECTRONICS CO.,LTD.
描述：	P-Channel Enhancement Mode MOSFET
文件：	总11页 (文件大小：1040K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HY15P04 D/U/V

P-Channel Enhancement Mode MOSFET

Feature

Pin Description



-40V/-50A

R_{DS(ON)= 9.7mΩ(typ.)@VGS = 10V}

R_{DS(ON)= 12mΩ(typ.)@VGS = 4.5V}



100% avalanche tested

Reliable and Rugged

halogen Free and Green Devices Available

(RoHS Compliant)

TO-252-2L

TO-251-3L

TO-251-3S

Applications



Power Management in DC/DC converter.

P-Channel MOSFET

Ordering and Marking Information

Package Code

D: TO-252-2L

U: TO-251-3L V:TO-251-3S

HY15P04 HY15P04

YYXXXJWW G YYXXXJWW G

HY15P04

YYXXXJWW G

Date Code

Assembly Material

G:Halogen Free

YYXXX WW

Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-

nation finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-Free require-

ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green”

to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous

material and total of Br and Cl does not exceed 1500ppm by weight).

HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and Advise

customers to obtain the latest version of relevant information to verify before placing orders.

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HY15P04 D/U/V

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (Tc=25°C Unless Otherwise Noted)

V^DSS

VGSS

Drain-Source Voltage

-40

±20

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Drain Current-Continuous

175

°C

T^STG

I^S

-55 to 175

-50

Tc=25°C

Mounted on Large Heat Sink

Tc=25°C

Tc=100°C

Tc=25°C

Tc=100°C

-180

-50

I^DM

Pulsed Drain Current *

Continuous Drain Current

-36.5

57.7

Maximum Power Dissipation

28.8

R_JC

R_JA

EAS

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient **

SinglePulsed-Avalanche Energy ***

2.6

110

L=0.3mH

416.8***

Note:

Repetitive rating; pulse width limited by max junction temperature.

Surface mounted on FR-4 board.

***

Limited by T^Jmax , starting T^J=25°C, L = 0.3mH, R^G= 25Ω, V^GS=10V.

Electrical Characteristics(Tc =25°C Unless Otherwise Noted)

HY15P04

Symbol

Parameter

Test Conditions

Unit

Min

Typ

Max

Static Characteristics

V_GS=0V,I_DS=250uA

V^DS=-30V, V_GS=0V

BV^DSS

Drain-Source Breakdown Voltage

-40

-1

I^DSS

Drain-to-Source Leakage Current

TJ=125°C

-50

-3.0

±100

VDS=VGS, I_DS=250uA

V^GS=±20V,V^DS=0V

V_GS=-10V,I_D= -20A

V_GS=-4.5V,I_D= -20A

VGS(th)

IGSS

Gate Threshold Voltage

-1.0

-1.5

Gate-Source Leakage Current

mΩ

9.7

R^DS(ON)*

Drain-Source On-state Resistance

Diode Characteristics

V^SD*

trr

Diode Forward Voltage

ISD= -20A,VGS=0V

-0.85

-1.3

Reverse Recovery Time

Reverse Recovery Charge

ISD= -20A,dI/dt=380A/us

Qrr

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HY15P04 D/U/V

Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)

HY15P04

Typ

Symbol

Parameter

Test Conditions

Unit

Min

Max

Dynamic Characteristics

V_GS=0V,V_DS=-25V,F=

1MHz

R^G

Gate Resistance

12.8

Ciss

Coss

Crss

td(ON)

T^r

Input Capacitance

3938

250

183

VGS=0V,

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

VDS=-25V,

Frequency=1.0MHz

V^DD= -15V,R^G=3Ω,

I^DS= -20A,V^GS=10V

d(OFF)

Turn-off Delay Time

Turn-off Fall Time

T^f

Gate Charge Characteristics

Total Gate Charge

7.6

V_DS= -32V, V_GS= -10V，

Qgs

Qgd

Gate-Source Charge

Gate-Drain Charge

I_D= -20A

Note: *Pulse test; pulse width ≤ 300us，duty cycle ≤ 2%

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HY15P04 D/U/V

Typical Operating Characteristics

Figure 1: Power Dissipation

Figure 2: Drain Current

Tc-Case Temperature(℃)

Figure 3: Safe Operation Area

Figure 4: Thermal Transient Impedance

-VDS-Drain-Source Voltage(V)

Maximum Effective Transient Thermal

Impedance, Junction-to-Case

Figure 5: Output Characteristics

Figure 6: Drain-Source On Resistance

-V^DS-Drain-Source Voltage (V)

- I^D-Drain Current(A)

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HY15P04 D/U/V

Typical Operating Characteristics(Cont.)

Figure 7: On-Resistance vs. Temperature

Figure 8: Source-Drain Diode Forward

Tj-Junction Temperature (℃)

-VSD-Source-Drain Voltage(V)

Figure 9: Capacitance Characteristics

Figure 10: Gate Charge Characteristics

-VDS-Drain-Source Voltage (V)

QG-Gate Charge (nC)

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HY15P04 D/U/V

Avalanche Test Circuit

Switching Time Test Circuit

Gate Charge Test Circuit

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HY15P04 D/U/V

Device Per Unit

Package Type

TO-252-2L

Unit

Tube

Quantity

TO-251-3L

TO-251-3S

Package Information

TO-252-2L

COMMON DIMENSIONS

SYMBOL

MIN

2.20

0.00

0.97

0.68

5.20

0.43

5.98

NOM

2.30

MAX

2.40

0.20

1.17

0.90

5.50

0.63

6.22

1.07

0.78

5.33

0.53

6.10

5.30REF

6.60

6.40

4.63

6.80

2.286BSC

10.10

1.50

2.90REF

0.51BSC

9.40

1.38

10.50

1.75

0.88

1.28

1.00

1.95

8°

1.65

0°

1.80

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HY15P04 D/U/V

TO-251-3L

COMMON DIMENSIONS

SYMBOL

MIN

2.20

0.97

0.68

0.00

5.20

0.43

5.98

NOM

2.30

MAX

2.40

1.17

0.90

0.10

5.50

0.63

6.22

1.07

0.78

b2'

0.04

5.33

0.53

6.10

5.30REF

6.60

6.40

4.63

6.80

2.286BSC

16.52

9.40

16.22

9.15

0.88

1.65

16.82

9.65

1.28

1.95

1.02

1.80

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HY15P04 D/U/V

TO-251-3S

COMMON DIMENSIONS

SYMBOL

MIN

2.20

0.97

0.68

5.20

0.43

5.98

NOM

2.30

MAX

2.40

1.17

0.90

5.50

0.63

6.22

1.07

0.78

5.33

0.53

6.10

5.30REF

6.60

6.40

4.63

6.80

2.286BSC

11.22

4.10

10.00

3.90

0.88

1.65

11.44

4.30

1.28

1.95

1.02

1.80

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HY15P04 D/U/V

Classification Profile

Classification Reflow Profiles

Profile Feature

Preheat & Soak

Sn-Pb Eutectic Assembly

Pb-Free Assembly

100 °C

150 °C

200 °C

Temperature min (T^smin

)

Temperature max (T^smax

)

60-120 seconds

Time (Tsmin to Tsmax) (t

)

Average ramp-up rate

3 °C/second max.

3°C/second max.

(T^smaxto T

Liquidous temperature (T

Time at liquidous (t

Peak package body Temperature

(T )*

Time (t

classification temperature (T

Average ramp-down rate (T

Time 25°C to peak temperature

)

183 °C

217 °C

60-150 seconds

See Classification Temp in table 1 See Classification Temp in table 2

)** within 5°C of the specified

20** seconds

30** seconds

)

to T^smax

)

6 °C/second max.

6 minutes max.

6 °C/second max.

8 minutes max.

*Tolerance for peak profile Temperature (T^p) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.

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HY15P04 D/U/V

Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)

Package

Thickness

＜2.5 mm

≥2.5 mm

Volume mm³

<350

Volume mm³

≥350

235 °C

220 °C

Table 2.Pb-free Process – Classification Temperatures (Tc)

Package

Thickness

<1.6 mm

Volume mm³

<350

Volume mm³

350-2000

260 °C

Volume mm³

≥2000

260 °C

1.6 mm – 2.5 mm

≥2.5 mm

260 °C

250 °C

245 °C

250 °C

245 °C

Reliability Test Program

Test item

Method

Description

SOLDERABILITY

JESD-22, B102

JESD-22, A108

JESD-22, A102

JESD-22, A104

5 Sec, 245°C

HTRB

PCT

1000 Hrs, Bias @ 125°C

168 Hrs, 100%RH, 2atm, 121°C

500 Cycles, -65°C~150°C

TCT

Customer Service

Worldwide Sales and Service: sales@hooyi.cc

Technical Support: technical @ hooyi.cc

Xi’an Hooyi Semiconductor Technology Co., Ltd.

No.105, 5th Fengcheng Road, Economic and Technological Development Zone, Xi'an, China

TEL: (86-029) 86685706

FAX: (86-029) 86685705

E-mail: sales@hooyi.cc

Web net: www.hooyi.cc

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