HY1607PM [HUAYI]

N-Channel Enhancement Mode MOSFET;
HY1607PM
型号: HY1607PM
厂家: HUAYI MICROELECTRONICS CO.,LTD.    HUAYI MICROELECTRONICS CO.,LTD.
描述:

N-Channel Enhancement Mode MOSFET

文件: 总15页 (文件大小:1177K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HY1607AP/M/B/MF/PS/PM  
N-Channel Enhancement Mode MOSFET  
Pin Description  
Features  
68V/80A  
RDS(ON) = 6.5m(typ.) @ VGS=10V  
S
D
G
100% avalanche tested  
Reliable and Rugged  
S
D
G
S
D
G
TO-220FB-3L  
TO-263-2L  
TO-220FB-3M  
Lead Free and GreenDevicesAvailable  
(RoHS Compliant)  
S
D
G
S
S
D
D
G
G
TO-220MF-3L  
TO-3PS-3L  
TO-3PM-3M  
Applications  
Switching application  
Power Management for Inverter Systems.  
N-ChannelMOSFET  
Ordering and Marking Information  
Package Code  
P
M
B
P : TO-220FB-3L  
B: TO-263-2L  
M : TO-220FB-3M  
MF: TO-220MF-3L  
PM: TO-3PM-3S  
HY1607A  
YYXXXJWW G  
HY1607A  
YYXXXJWW G  
HY1607A  
YYXXXJWW G  
PS: TO-3PS-3L  
MF  
HY1607A  
YYXXXJWW G  
PS  
HY1607A  
YYXXXJWW G  
PM  
HY1607A  
YYXXXJWW G  
Assembly Material  
G : Lead Free Device  
Date Code  
YYXXX WW  
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate  
Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-  
Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.  
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed  
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).  
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to  
this pr-oduct and/or to this document at any time without notice.  
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1
V1.0  
HY1607AP/M/B/MF/PS/PM  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Unit  
Common Ratings (TC=25°C Unless Otherwise Noted)  
VDSS  
VGSS  
TJ  
Drain-Source Voltage  
68  
±25  
V
Gate-Source Voltage  
Maximum Junction Temperature  
Storage Temperature Range  
Diode Continuous Forward Current  
175  
°C  
°C  
A
TSTG  
IS  
-55 to 175  
80  
TC=25°C  
Mounted on Large Heat Sink  
IDM  
Pulsed Drain Current *  
320**  
80  
A
A
TC=25°C  
TC=100°C  
TC=25°C  
TC=100°C  
ID  
Continuous Drain Current  
66  
148  
74  
PD  
Maximum Power Dissipation  
W
Thermal Resistance-Junction to Case  
Thermal Resistance-Junction to Ambient  
1.01  
62.5  
RJC  
RJA  
°C/W  
Avalanche Ratings  
EAS Avalanche Energy, Single Pulsed  
Note  
L=0.5mH  
420***  
mJ  
*
Repetitive rating ; pulse width limiited by junction temperature  
** Drain current is limited by junction temperature  
*** VD=55V  
Electrical Characteristics (TC = 25C Unless Otherwise Noted)  
HY1607A  
Symbol  
Parameter  
Test Conditions  
Unit  
Min. Typ. Max.  
Static Characteristics  
-
BVDSS Drain-Source Breakdown Voltage  
68  
-
-
1
V
VGS=0V, IDS=250A  
VDS=68V, VGS=0V  
-
IDSS Zero Gate Voltage Drain Current  
A  
TJ=85°C  
-
-
3
10  
4
VGS(th) Gate Threshold Voltage  
IGSS Gate Leakage Current  
RDS(ON)  
Diode Characteristics  
2
-
V
VDS=VGS, IDS=250A  
VGS=±25V, VDS=0V  
-
±100  
7
nA  
m  
*
Drain-Source On-state Resistance VGS=10V, IDS=40A  
-
6.5  
VSD*  
trr  
Diode Forward Voltage  
ISD=40A, VGS=0V  
-
-
-
0.8  
33  
61  
1
-
V
Reverse Recovery Time  
Reverse Recovery Charge  
ns  
nC  
ISD=40A, dlSD/dt=100A/s  
Qrr  
-
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2
HY1607AP/M/B/MF/PS/PM  
Electrical Characteristics (Cont.) (TC = 25C Unless Otherwise Noted)  
HY1607A  
Symbol  
Parameter  
Test Conditions  
Unit  
Min. Typ. Max.  
Dynamic Characteristics  
RG  
Ciss  
Coss  
Crss  
td(ON)  
Tr  
Gate Resistance  
VGS=0V,VDS=0V,F=1MHz  
-
-
-
-
-
-
-
-
1.8  
3200  
780  
300  
14  
-
Input Capacitance  
-
VGS=0V,  
VDS=25V,  
Frequency=1.0MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Turn-on Rise Time  
-
-
-
-
-
-
VDD=34V, RG=3 ,  
IDS=40A, VGS=10V,  
13  
ns  
td(OFF) Turn-off Delay Time  
Tf Turn-off Fall Time  
Gate Charge Characteristics  
20  
7.2  
Qg  
Qgs  
Qgd  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
-
-
-
80  
10  
20  
-
-
-
VDS=55V, VGS=10V,  
IDS=40A  
nC  
Note * : Pulse test ; pulse width 300s, duty cycle2%.  
.
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3
HY1607AP/M/B/MF/PS/PM  
Typical Operating Characteristics  
Power Dissipation  
Drain Current  
280  
240  
200  
160  
120  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
limited by package  
40  
TC=25oC  
0
TC=25oC,VG=10V  
0
20 40 60 80 100 120 140 160 180 200  
0
20 40 60 80 100 120 140 160 180 200  
Tc -  
Temperature (°C)  
Tc-Case Temperature (°C)  
Case  
Safe Operation Area  
600  
100  
100us  
1ms  
Rds(on) Limit  
10ms  
DC  
10  
1
TC=25oC  
0.1  
0.01  
0.1  
1
10  
100 500  
VDS - Drain - Source Voltage (V)  
Thermal Transient Impedance  
10  
1
Duty = 0.5  
0.2  
0.1  
0.05  
0.1  
0.02  
0.01  
Single  
0.01  
Mounted on minimum pad  
JA : 62.5 oC/W  
R
0.001  
0.1  
0.0001  
0.001  
0.01  
1
10  
Square Wave Pulse Duration (sec)  
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4
HY1607AP/M/B/MF/PS/PM  
Typical Operating Characteristics (Cont.)  
Output Characteristics  
Drain-Source On Resistance  
8.0  
7.5  
160  
140  
120  
100  
80  
VGS=7,8,9,10V  
6V  
5.5V  
5V  
V
GS =10V  
7.0  
6.5  
6.0  
5.5  
60  
40  
20  
4.5V  
10  
0
0
20  
40  
60  
80  
100  
0
2
4
6
8
12  
VDS - Drain-Source Voltage (V)  
ID - Drain Current (A)  
Drain-Source On Resistance  
Gate Threshold Voltage  
17  
15  
13  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
IDS=40A  
IDS =250A  
11  
9
7
5
4
5
6
7
8
9
10  
-50 -25  
0
25 50 75 100 125 150 175  
VGS - Gate - Source Voltage (V)  
Tj - Junction Temperature (°C)  
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V1.0  
HY1607AP/M/B/MF/PS/PM  
Typical Operating Characteristics (Cont.)  
Drain-Source On Resistance  
Source-Drain Diode Forward  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
175  
100  
VGS = 10V  
IDS = 40A  
Tj=175oC  
10  
1
Tj=25oC  
RON@Tj=25oC: 6.5m  
0.1  
-50 -25  
0
25 50 75 100 125 150 175  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4  
Tj - Junction Temperature (°C)  
VSD - Source-Drain Voltage (V)  
Capacitance  
Gate Charge  
5500  
5000  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
10  
Frequency=1MHz  
VDS= 55V  
IDS= 40A  
9
8
7
6
5
4
3
2
1
0
Ciss  
Coss  
Crss  
0
0
5
10 15 20 25 30 35 40  
10 20 30 40 50 60 70 80  
0
VDS - Drain - Source Voltage (V)  
QG -Gate Charge (nC)  
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6
HY1607AP/M/B/MF/PS/PM  
Avalanche Test Circuit  
Switching Time Test Circuit  
Gate Charge Test Circuit  
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7
HY1607AP/M/B/MF/PS/PM  
Device Per Unit  
Package Type  
Unit  
Quantity  
TO-220FB-3L  
Tube  
50  
Package Information  
TO-220FB-3L  
COMMON DIMENSIONS  
mm  
NOM  
4.57  
SYMBOL  
MIN  
4.37  
1.25  
2.20  
0.70  
1.17  
0.40  
15.10  
8.80  
5.50  
9.70  
7.00  
MAX  
4.77  
1.45  
2.60  
0.95  
1.47  
0.65  
16.10  
9.40  
-
A
A1  
A2  
b
1.30  
2.40  
0.80  
b2  
c
1.27  
0.50  
D
15.60  
9.10  
D1  
D2  
E
-
10.00  
-
10.30  
-
E3  
e
2.54 BSC  
5.08 BSC  
6.50  
e1  
H1  
L
6.25  
12.75  
-
6.85  
13.80  
3.40  
3.80  
3.00  
13.50  
3.10  
L1  
ΦP  
Q
3.40  
2.60  
3.60  
2.80  
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8
V1.0  
HY1607AP/M/B/MF/PS/PM  
Device Per Unit  
Package Type  
Unit  
Quantity  
TO-220FB-3S  
Tube  
50  
Package Information  
TO-220FB-3S  
COMMON DIMENSIONS  
mm  
SYMBOL  
MIN  
4.37  
1.25  
2.20  
0.70  
1.17  
0.40  
15.10  
8.10  
5.50  
9.70  
7.00  
NOM  
4.57  
MAX  
4.77  
1.45  
2.60  
0.95  
1.47  
0.65  
16.10  
9.40  
-
A
A1  
A2  
b
1.30  
2.40  
0.80  
b2  
c
1.27  
0.50  
D
15.60  
9.10  
D1  
D2  
E
-
10.00  
-
10.30  
-
E3  
e
2.54 BSC  
5.08 BSC  
6.50  
e1  
H1  
L
6.25  
6.80  
-
6.85  
7.20  
3.40  
3.80  
3.00  
7.00  
L1  
ΦP  
Q
3.10  
3.40  
2.60  
3.60  
2.80  
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9
V1.0  
HY1607AP/M/B/MF/PS/PM  
Device Per Unit  
Package Type  
Unit  
Quantity  
TO-263-2L  
Reel  
50  
Package Information  
TO-263-2L  
COMMON DIMENSIONS  
mm  
SYMBOL  
MIN  
4.37  
1.22  
2.49  
0
NOM  
4.57  
1.27  
2.69  
0.13  
0.81  
1.27  
0.38  
8.7  
MAX  
4.77  
1.42  
2.89  
0.25  
0.96  
1.47  
0.53  
8.9  
A
A1  
A2  
A3  
b
0.7  
b1  
c
1.17  
0.3  
D1  
D4  
E
8.5  
6.6  
-
-
9.86  
7.06  
10.16  
-
10.36  
-
E5  
e
2.54 BSC  
15.1  
1.27  
2.3  
H
14.7  
1.07  
2
15.5  
1.47  
2.6  
H2  
L
L1  
L4  
θ
1.4  
1.55  
0.25 BSC  
5°  
1.7  
0°  
9°  
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10  
V1.0  
HY1607AP/M/B/MF/PS/PM  
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HY1607AP/M/B/MF/PS/PM  
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HY1607AP/M/B/MF/PS/PM  
Classification Profile  
Classification Reflow Profiles  
Profile Feature  
Preheat & Soak  
Sn-Pb Eutectic Assembly  
Pb-Free Assembly  
100 C  
150 C  
60-120 seconds  
150 C  
200 C  
60-120 seconds  
Temperature min (Tsmin  
)
Temperature max (Tsmax  
)
Time (Tsmin to Tsmax) (ts)  
Average ramp-up rate  
(Tsmax to TP)  
3 C/second max.  
3C/second max.  
Liquidous temperature (TL)  
Time at liquidous (tL)  
183 C  
60-150 seconds  
217 C  
60-150 seconds  
Peak package body Temperature  
(Tp)*  
See Classification Temp in table 1  
20** seconds  
See Classification Temp in table 2  
30** seconds  
Time (tP)** within 5C of the specified  
classification temperature (Tc)  
Average ramp-down rate (Tp to Tsmax  
)
6 C/second max.  
6 C/second max.  
6 minutes max.  
8 minutes max.  
Time 25C to peak temperature  
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.  
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.  
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HY1607AP/M/B/MF/PS/PM  
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)  
Volume mm3  
Package  
Thickness  
Volume mm3  
<350  
350  
<2.5 mm  
235 C  
220 C  
220 C  
2.5 mm  
220 C  
Table 2. Pb-free Process – Classification Temperatures (Tc)  
Package  
Thickness  
<1.6 mm  
Volume mm3  
<350  
Volume mm3  
350-2000  
260 C  
Volume mm3  
>2000  
260 C  
245 C  
245 C  
260 C  
260 C  
250 C  
1.6 mm – 2.5 mm  
2.5 mm  
250 C  
245 C  
Reliability Test Program  
Test item  
SOLDERABILITY  
Method  
JESD-22, B102  
Description  
5 Sec, 245°C  
HTRB  
PCT  
JESD-22, A108  
JESD-22, A102  
JESD-22, A104  
168 Hrs /500 Hrs /1000 Hrs, Bias @ 150°C  
96Hrs, 100%RH, 2atm, 121°C  
500 Cycles, -55°C~150°C  
TCT  
&XVWRPHUꢀ6HUYLFHꢀ  
:RUOGZLGHꢄ6DOHVꢄDQGꢄ6HUYLFHꢍꢄVDOHV#K\PH[DꢇFRPꢄ  
7HFKQLFDOꢄ6XSSRUWꢍ7HFKQRORJ\#K\PH[DꢇFRPꢄ  
;LꢎDQꢄ+XD\Lꢄ0LFURHOHFWURQLFVꢄ&Rꢇꢏꢄ/WGꢇꢄ  
1Rꢇꢌꢆꢁꢌꢏ6KDQJMLꢄ5RDGꢏ(FRQRPLFꢄDQGꢄ7HFKQRORJLFDOꢄ'HYHORSPHQWꢄ=RQHꢏ;LꢎDQꢏ&KLQDꢄ  
7(/ꢍꢄꢐꢌꢈꢀꢂꢁꢆꢑꢄꢌꢈꢈꢌꢅꢋꢂꢈꢄ  
)$;ꢍꢄꢐꢌꢈꢀꢂꢁꢆꢑꢄꢌꢈꢈꢌꢅꢋꢂꢅꢄ  
(ꢀPDLOꢍꢄVDOHV#K\PH[DꢇFRP  
:HEꢄQHWꢍꢄZZZꢇK\PH[DꢇFRP  
www.hymexa.com  
V1.0  
15  

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