HY1904P [HUAYI]
N-Channel Enhancement Mode MOSFET;
| 型号： | HY1904P |
| 厂家： | 
HUAYI MICROELECTRONICS CO.,LTD. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：2029K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY1904P/B/M
N-Channel Enhancement Mode MOSFET
Feature
Pin Description
40V/90A
RDS(ON)= 4.7mΩ(typ.)@VGS = 10V
RDS(ON)= 5.7mΩ(typ.)@VGS = 4.5V
S
D
100% Avalanche Tested
Reliable and Rugged
G
S
D
G
S
D
G
Lead Free and Green Devices Available
(RoHS Compliant)
TO-220FB-3L
TO-220FB-3S
TO-263-2L
Applications
Switching application
Power Management for Inverter Systems
N-Channel MOSFET
Ordering and Marking Information
Package Code
P:TO-220FB-3L
B:TO-263-2L
P
B
M
M:TO-220FB-3S
HY1904
HY1904
HY1904
YYXXXJWW G YYXXXJWW G YYXXXJWW G
Date Code
Assembly Material
G:Lead Free
YYXXX WW
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-
oduct and/or to this document at any time without notice.
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HY1904P/B/M
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
40
V
V
Gate-Source Voltage
±25
Junction Temperature Range
-55 to 175
-55 to 175
90
°C
TSTG
IS
Storage Temperature Range
°C
A
Source Current-Continuous(Body Diode)
Tc=25°C
Mounted on Large Heat Sink
324
90
A
A
IDM
Pulsed Drain Current *
Tc=25°C
Tc=25°C
Tc=100°C
Tc=25°C
Tc=100°C
ID
Continuous Drain Current
62
A
100
50
W
PD
Maximum Power Dissipation
W
RJC
RJA
EAS
Thermal Resistance, Junction-to-Case**
Thermal Resistance, Junction-to-Ambient
SinglePulsed-Avalanche Energy ***
1.5
62.5
184
°C/W
°C/W
mJ
L=0.3mH
Note:
*
**
Repetitive rating；pulse width limited by max.junction temperature. Drain
current is limited by junction temperature
***
Limited by TJmax , starting TJ=25°C, L = 0.3mH, VD= 32V, VGS =10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
HY1904
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
VGS=0V,IDS=250μA
VDS=40V,VGS=0V
BVDSS
Drain-Source Breakdown Voltage
40
-
-
-
1
V
-
μA
μA
V
IDSS
Drain-to-Source Leakage Current
TJ=125°C
-
1.0
-
-
100
3.0
±100
6.0
7.0
VDS=VGS, IDS=250μA
VGS=±25V,VDS=0V
VGS=10V,IDS=45A
VGS=4.5V,IDS=45A
VGS(th)
IGSS
Gate Threshold Voltage
1.7
-
Gate-Source Leakage Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
nA
mΩ
mΩ
RDS(ON)*
RDS(ON)*
-
4.7
5.7
-
Diode Characteristics
Diode Forward Voltage
ISD=45A,VGS=0V
-
-
-
0.8
25
16
1.0
V
VSD*
trr
Reverse Recovery Time
Reverse Recovery Charge
-
-
ns
nC
ISD=45A,dISD/dt=100A/μs
Qrr
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HY1904P/B/M
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
HY1904
Typ.
Symbol
Parameter
Test Conditions
Unit
Min
Max
Dynamic Characteristics
RG
Ciss
Coss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
1.6
2274
194
-
-
-
Ω
Input Capacitance
Output Capacitance
VGS=0V,
VDS=25V,
pF
Reverse Transfer
Capacitance
Frequency=1.0MHz
Crss
-
70
-
td(ON)
Tr
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
-
-
-
-
8
-
-
-
-
40
29
20
VDD=20V,RG=6Ω,
IDS=45A,VGS=10V
ns
td(OFF)
Tf
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
-
-
-
52
6
-
-
-
VDS =32V, VGS=10V,
ID=45A
nC
Gate-Source Charge
Gate-Drain Charge
11
Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%
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HY1904P/B/M
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Tc-Case Temperature(℃)
Tc-Case Temperature(℃)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
VDS-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
VDS-Drain-Source Voltage (V)
ID-Drain Current(A)
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HY1904P/B/M
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction Temperature (℃)
VSD-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
VDS-Drain-Source Voltage (V)
QG-Gate Charge (nC)
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HY1904P/B/M
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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HY1904P/B/M
Device Per Unit
Package Type
TO-220FB-3L
TO-263-2L
Unit
Tube
Tube
Tube
Quantity
50
50
50
TO-220FB-3S
Package Information
TO-220FB-3L
COMMON DIMENSIONS
mm
NOM
4.57
SYMBOL
MIN
4.37
1.25
2.20
0.70
1.17
0.40
15.10
8.80
5.50
9.70
7.00
MAX
4.77
1.45
2.60
0.95
1.47
0.65
16.10
9.40
-
A
A1
A2
b
1.30
2.40
0.80
b2
c
1.27
0.50
D
15.60
9.10
D1
D2
E
-
10.00
-
10.30
-
E3
e
2.54 BSC
5.08 BSC
6.50
e1
H1
L
6.25
12.75
-
6.85
13.80
3.40
3.80
3.00
13.50
3.10
L1
ΦP
Q
3.40
2.60
3.60
2.80
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HY1904P/B/M
TO-263-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
4.37
1.22
2.49
0
NOM
4.57
1.27
2.69
0.13
0.81
1.27
0.38
8.7
MAX
4.77
1.42
2.89
0.25
0.96
1.47
0.53
8.9
A
A1
A2
A3
b
0.7
b1
c
1.17
0.3
D1
D4
E
8.5
6.6
-
-
9.86
7.06
10.16
-
10.36
-
E5
e
2.54 BSC
15.1
1.27
2.3
H
14.7
1.07
2
15.5
1.47
2.6
H2
L
L1
L4
θ
1.4
1.55
0.25 BSC
5°
1.7
0°
9°
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HY1904P/B/M
TO-220FB-3S
COMMON DIMENSIONS
mm
SYMBOL
MIN
4.37
1.25
2.20
0.70
1.17
0.40
15.10
8.10
5.50
9.70
7.00
NOM
4.57
MAX
4.77
1.45
2.60
0.95
1.47
0.65
16.10
9.40
-
A
A1
A2
b
1.30
2.40
0.80
b2
c
1.27
0.50
D
15.60
9.10
D1
D2
E
-
10.00
-
10.30
-
E3
e
2.54 BSC
5.08 BSC
6.50
e1
H1
L
6.25
6.80
-
6.85
7.20
3.40
3.80
3.00
7.00
L1
ΦP
Q
3.10
3.40
2.60
3.60
2.80
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HY1904P/B/M
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (Tsmin
)
Temperature max (Tsmax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(Tsmaxto T )
P
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1 SeeClassification Tempin table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to Tsmax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.
p
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HY1904P/B/M
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
＜2.5 mm
≥2.5 mm
Volume mm³
<350
Volume mm³
≥350
235 °C
220 °C
220 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm³
<350
Volume mm³
350-2000
260 °C
Volume mm³
≥2000
260 °C
260 °C
1.6 mm – 2.5 mm
≥2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
HTRB
PCT
168 Hrs/500 Hrs/1000 Hrs, Bias@150°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Technical Support: Technology@hymexa.com
Xi'an Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
Web net: www.hymexa.com
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