HY19P03V [HUAYI]
P-Channel Enhancement Mode MOSFET;型号: | HY19P03V |
厂家: | HUAYI MICROELECTRONICS CO.,LTD. |
描述: | P-Channel Enhancement Mode MOSFET |
文件: | 总11页 (文件大小:1269K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HY19P03 D/U/V
P-Channel Enhancement Mode MOSFET
Feature
Pin Description
-30V/-90A
RDS(ON)= 4.8mΩ(typ.) @VGS = 10V
RDS(ON)= 6.5mΩ(typ.) @VGS = 4.5V
100% avalanche tested
D
G
Reliable and Rugged
Halogen Free and Green Devices Available
(RoHS Compliant)
TO-252-2L
TO-251-3L
TO-251-3S
Applications
Switching Application
Power Management for DC/DC
Battery Protection
P-Channel MOSFET
Ordering and Marking Information
Package Code
D: TO-252-2L
U: TO-251-3L V:TO-251-3S
D
U
V
HY19P03 HY19P03
YYXXXJWW G YYXXXJWW G
HY19P03
YYXXXJWW G
Date Code
YYXXX WW
Assembly Material
G:Halogen Free
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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HY19P03 D/U/V
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
-30
±20
V
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Drain Current-Continuous
150
°C
°C
A
TSTG
IS
-55 to 150
-90
Tc=25°C
Mounted on Large Heat Sink
Tc=25°C
Tc=25°C
Tc=100°C
Tc=25°C
Tc=100°C
-360
-90
A
A
IDM
Pulsed Drain Current *
ID
Continuous Drain Current
-59
A
50
W
PD
Maximum Power Dissipation
20
W
RJC
RJA
EAS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
SinglePulsed-Avalanche Energy ***
2.5
°C/W
°C/W
mJ
110
358***
L=0.3mH
Note:
*
**
Repetitive rating; pulse width limited by max junction temperature.
Surface mounted on FR-4 board.
***
Limited by TJmax , starting TJ=25°C , L = 0.3mH, RG= 25Ω, VGS=10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
HY19P03
Symbol
Parameter
Test Conditions
Unit
Min
Typ
Max
Static Characteristics
VGS=0V,IDS=250uA
BVDSS
Drain-Source Breakdown Voltage
-30
-
-
-
-1
V
VDS=-30V, VGS=0V
TJ=55°C
-
uA
uA
V
IDSS
Drain-to-Source Leakage Current
-
-
-10
-3.0
±100
6
VDS=VGS, IDS=250uA
VGS=±20V,VDS=0V
VGS=-10V,ID= -45A
VGS=-4.5V,ID= -45A
VGS(th)
IGSS
Gate Threshold Voltage
-1.0
-1.7
-
Gate-Source Leakage Current
-
-
nA
mΩ
mΩ
4.8
6.4
RDS(ON)*
Drain-Source On-state Resistance
8
Diode Characteristics
Diode Forward Voltage
ISD= -45A,VGS=0V
-
-
-
-0.82
25
-1.3
V
VSD*
trr
Reverse Recovery Time
Reverse Recovery Charge
-
-
ns
nC
ISD= -45A,dI/dt=100A/us
Qrr
20
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HY19P03 D/U/V
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
HY19P03
Typ
Symbol
Parameter
Test Conditions
Unit
Min
Max
Dynamic Characteristics
VGS=0V,VDS=0V,F=1
MHz
RG
Gate Resistance
-
3.5
-
Ω
Ciss
Coss
Crss
td(ON)
Tr
Input Capacitance
-
-
-
-
-
-
-
4787
461
329
12
-
-
-
-
-
-
-
VGS=0V,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
VDS=-15V,
pF
Frequency=1.0MHz
16
VDD= -15V,RG=3Ω,
ns
IDS= -45A,VGS=10V
td(OFF)
Tf
Turn-off Delay Time
Turn-off Fall Time
75
37
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
-
-
-
90
7.6
19
-
-
-
VDS = -24V, VGS= -10V,
nC
Gate-Source Charge
Gate-Drain Charge
ID= -45A,
Note: *Pulse test; pulse width ≤ 300us,duty cycle ≤ 2%
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HY19P03 D/U/V
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Tc-Case Temperature(℃)
Tc-Case Temperature(℃)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
-VDS-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
-VDS-Drain-Source Voltage (V)
- ID-Drain Current(A)
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HY19P03 D/U/V
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction Temperature (℃)
-VSD-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
-VDS-Drain-Source Voltage (V)
QG-Gate Charge (nC)
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HY19P03 D/U/V
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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HY19P03 D/U/V
Device Per Unit
Package Type
TO-252-2L
Unit
Tube
Quantity
75
TO-252-2L
Reel
Tube
Tube
2500
75
TO-251-3L
TO-251-3S
75
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.00
0.97
0.68
5.20
0.43
5.98
NOM
2.30
MAX
2.40
0.20
1.17
0.90
5.50
0.63
6.22
A
A1
A2
b
-
1.07
0.78
b3
c
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
H
9.40
1.38
10.10 10.50
L
1.50
1.75
L1
L2
L3
L4
L5
θ
2.90REF
0.51BSC
0.88
-
-
1.28
1.00
1.95
8°
-
1.80
-
1.65
0°
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HY19P03 D/U/V
TO-251-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
0.00
0.00
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
0.10
0.10
5.50
0.63
6.22
A
A2
b
1.07
0.78
b2
b2'
b3
c
0.04
0.04
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
16.52
9.40
H
16.22
9.15
0.88
1.65
16.82
9.65
1.28
1.95
L1
L3
L5
1.02
1.80
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HY19P03 D/U/V
TO-251-3S
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
5.50
0.63
6.22
A
A2
b
1.07
0.78
b3
c
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
11.22
4.10
H
10.00
3.90
0.88
1.65
11.44
4.30
1.28
1.95
L1
L3
L5
1.02
1.80
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HY19P03 D/U/V
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (Tsmin
)
Temperature max (Tsmax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(Tsmax to T )
P
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1 See Classification Temp in table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to Tsmax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.
p
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HY19P03 D/U/V
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
<2.5 mm
≥2.5 mm
Volume mm³
<350
Volume mm³
≥350
235 °C
220 °C
220 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm³
<350
Volume mm³
350-2000
260 °C
Volume mm³
≥2000
260 °C
260 °C
1.6 mm – 2.5 mm
≥2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245qC
168 Hrs /500 Hrs /1000 Hrs, Bias @ 150°C
96 Hrs, 100ꢀRH, 2atm, 121qC
500 Cycles, -55qC~150qC
HOLT
PCT
TCT
&XVWRPHUꢀ6HUYLFH
Worldwide Sales and Service: sales@hymexa.com
Technical Support: Technology@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
Web net: www.hymexa.com
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