HY3712PS [HUAYI]
N-Channel Enhancement Mode MOSFET;
| 型号： | HY3712PS |
| 厂家： | 
HUAYI MICROELECTRONICS CO.,LTD. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总14页 (文件大小：1057K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY3712P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
F
eatures
Pin Description
•
125V/170A
R
DS(ON) = 6.3 m(typ.) @ VGS=10V
S
D
G
•
•
•
100% avalanche tested
Reliable and Rugged
S
D
G
S
D
G
TO-263-2L
TO-220FB-3M
TO-220FB-3L
Lead Free and Green DevicesAvailable
(RoHS Compliant)
S
D
G
S
S
D
D
G
G
TO-220MF-3L
TO-3PS-3L
TO-3PM-3S
pplications
A
Switching application
Power Management for Inverter Systems.
N-ChannelMOSFET
Ordering and Marking Information
Package Code
P : TO-220FB-3L
P
M
B
M : TO-220FB-3M
PS: TO-3PS-3L
HY3712
HY3712
HY3712
B: TO-263-2L
YYXXXJWW G
YYXXXJWW G
YYXXXJWW G
PM: TO-3PM-3S
PS
PM
Assembly Material
Date Code
HY3712
HY3712
YYXXXJWW G
YYXXXJWW G
YYXXX WW
G : Lead Free Device
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate
Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-
Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements
to
this pr-oduct and/or to this document at any time without notice.
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V1.0
1
HY3712P/M/B/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
125
±25
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
TSTG
IS
-55 to 175
170
TC=25°C
Mounted on Large Heat Sink
IDM
Pulsed Drain Current *
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
585**
170
A
A
ID
Continuous Drain Current
124
339
PD
Maximum Power Dissipation
W
170
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
0.44
62.5
RJC
RJA
°C/W
Avalanche Ratings
EAS Avalanche Energy, Single Pulsed
Note：
L=0.5mH
1155***
mJ
*
Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=100V
Electrical Characteristics (TC = 25C Unless Otherwise Noted)
HY3712
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
125
-
-
-
1
V
VGS=0V, IDS=250A
VDS=125V, VGS=0V
-
-
IDSS Zero Gate Voltage Drain Current
A
TJ=85°C
-
10
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)
Diode Characteristics
2.0
-
3.0
-
4.0
±100
7.5
V
VDS=VGS, IDS=250A
VGS=±25V, VDS=0V
nA
m
*
Drain-Source On-state Resistance VGS=10V, IDS=85A
-
6.3
VSD*
trr
Diode Forward Voltage
ISD=85A, VGS=0V
-
-
-
0.8
70
1
-
V
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
ISD=85A, dlSD/dt=100A/s
Qrr
110
-
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V1.0
2
HY3712P/M/B/PS/PM
Electrical Characteristics (Cont.) (TC = 25C Unless Otherwise Noted)
HY3712
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
RG
Ciss
Coss
Crss
td(ON)
Tr
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
-
-
-
-
-
3.0
8162
980
509
35
-
-
-
-
-
-
-
-
Input Capacitance
VGS=0V,
VDS=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
VDD=62.5 V, RG= 6 ,
IDS =85A, VGS=10V,
46
ns
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
95
52
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
189
29
-
VDS=100V, VGS=10V,
IDS=85A
nC
-
-
70
Note * : Pulse test ; pulse width 300s, duty cycle2%.
.
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V1.0
3
HY3712P/M/B/PS/PM
Typical Operating Characteristics
Drain Current
Power Dissipation
180
160
350
limited by package
300
250
200
150
100
50
140
120
100
80
60
40
20
TC=25oC
0
TC=25oC,VG=10V
0
0
20 40 60 80 100 120 140 160 180 200
0
20 40 60 80 100 120 140 160 180 200
Tc-Case Temperature (°C)
Tc -
Temperature (°C)
Case
Safe Operation Area
1000
100
100us
1ms
Rds(on) Limit
10ms
10
1
DC
TC=25oC
0
0.01
0.1
1
10
100 500
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.001
Single
Mounted on minimum pad
RJA : 62.5 oC/W
0.0001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
4
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V1.0
HY3712P/M/B/PS/PM
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
240
210
180
9.0
8.0
VGS= 5.5,6,7,8,9,10V
5V
150
V
GS =10V
7.0
120
90
4.5V
4V
6.0
5.0
60
30
0
4.0
0
40
80
120
160
200
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
16
14
12
10
8
IDS=85A
IDS =250A
6
4
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150 175
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
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V1.0
5
HY3712P/M/B/PS/PM
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
160
100
VGS = 10V
IDS = 85A
Tj=175oC
10
1
Tj=25oC
RON@Tj=25oC: 6.3m
0.1
-50 -25
0
25 50 75 100 125 150 175
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Capacitance
Frequency=1MHz
Ciss
Gate Charge
10
11000
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
VDS= 100V
IDS= 85A
9
8
7
6
5
4
3
2
1
0
Coss
Crss
0
5
10 15 20 25 30 35 40
0
25 50 75 100 125 150 175 200
VDS - Drain - Source Voltage (V)
QG -Gate Charge (nC)
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V1.0
6
HY3712P/M/B/PS/PM
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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V1.0
7
HY3712P/M/B/PS/PM
Device Per Unit
Package Type
Unit
Quantity
TO-220FB-3L
Tube
50
Package Information
TO-220FB-3L
COMMON DIMENSIONS
mm
NOM
4.57
SYMBOL
MIN
4.37
1.25
2.20
0.70
1.17
0.40
15.10
8.80
5.50
9.70
7.00
MAX
4.77
1.45
2.60
0.95
1.47
0.65
16.10
9.40
-
A
A1
A2
b
1.30
2.40
0.80
b2
c
1.27
0.50
D
15.60
9.10
D1
D2
E
-
10.00
-
10.30
-
E3
e
2.54 BSC
5.08 BSC
6.50
e1
H1
L
6.25
12.75
-
6.85
13.80
3.40
3.80
3.00
13.50
3.10
L1
ĭP
Q
3.40
2.60
3.60
2.80
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V1.0
8
HY3712P/M/B/PS/PM
Device Per Unit
Package Type
Unit
Quantity
TO-220FB-3S
Tube
50
Package Information
TO-220FB-3S
COMMON DIMENSIONS
mm
SYMBOL
MIN
4.37
1.25
2.20
0.70
1.17
0.40
15.10
8.10
5.50
9.70
7.00
NOM
4.57
MAX
4.77
1.45
2.60
0.95
1.47
0.65
16.10
9.40
-
A
A1
A2
b
1.30
2.40
0.80
b2
c
1.27
0.50
D
15.60
9.10
D1
D2
E
-
10.00
-
10.30
-
E3
e
2.54 BSC
5.08 BSC
6.50
e1
H1
L
6.25
6.80
-
6.85
7.20
3.40
3.80
3.00
7.00
L1
ĭP
Q
3.10
3.40
2.60
3.60
2.80
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V1.0
9
HY3712P/M/B/PS/PM
Device Per Unit
Package Type
Unit
Quantity
TO-263-2L
Reel
50
Package Information
TO-263-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
4.37
1.22
2.49
0
NOM
4.57
1.27
2.69
0.13
0.81
1.27
0.38
8.7
MAX
4.77
1.42
2.89
0.25
0.96
1.47
0.53
8.9
A
A1
A2
A3
b
0.7
b1
c
1.17
0.3
D1
D4
E
8.5
6.6
-
-
9.86
7.06
10.16
-
10.36
-
E5
e
2.54 BSC
15.1
1.27
2.3
H
14.7
1.07
2
15.5
1.47
2.6
H2
L
L1
L4
ș
1.4
1.55
0.25 BSC
5°
1.7
0°
9°
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V1.0
10
HY3712P/M/B/PS/PM
Device Per Unit
Package Type
Unit
Quantity
TO-3PS-3L
Tube
50
Package Information
TO-3PS-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
3.36
1.25
1.39
0.75
1.17
0.45
15.45
9.00
9.88
NOM
3.56
1.30
1.54
0.80
1.27
0.50
15.70
9.20
10.00
MAX
3.76
1.40
1.69
0.90
1.42
0.60
15.95
9.40
10.20
A
A1
A2
b
b2
c
D
D1
E
e
2.54
BSC
L
13.20
-
13.40
3.00
13.60
3.30
L1
ĭP1
Q
3.20 REF
4.00
3.88
4.12
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V1.0
11
HY3712P/M/B/PS/PM
Device Per Unit
Package Type
Unit
Quantity
TO-3PM-3S
Tube
50
Package Information
TO-3PM-3S
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V1.0
12
HY3712P/M/B/PS/PM
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 qC
150 qC
60-120 seconds
150 qC
200 qC
60-120 seconds
Temperature min (Tsmin
)
Temperature max (Tsmax
)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
3 qC/second max.
3qC/second max.
Liquidous temperature (TL)
Time at liquidous (tL)
183 qC
60-150 seconds
217 qC
60-150 seconds
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (tP)** within 5qC of the specified
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 qC/second max.
6 qC/second max.
6 minutes max.
8 minutes max.
Time 25qC to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
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V1.0
13
HY3712P/M/B/PS/PM
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
Package
Thickness
Volume mm3
<350
≥350
<2.5 mm
235 qC
220 qC
220 qC
t2.5 mm
220 qC
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
<350
Volume mm3
350-2000
260 qC
Volume mm3
>2000
260 qC
245 qC
245 qC
260 qC
260 qC
250 qC
1.6 mm – 2.5 mm
t2.5 mm
250 qC
245 qC
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22, B102
Description
5 Sec, 245qC
168Hrs/500Hrs/1000Hrs,Bias@125
96 Hrs, 100ꢀ RH, 2atm, 121qC
500 Cycles, -55qC~150qC
HTRB
PCT
TCT
JESD-22, A108
JESD-22, A102
JESD-22, A104
qC
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Technical Support: Technology@hymexa.com
Xi'an Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
Web net: www.hymexa.com
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V1.0
14
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