HY70R102P [HUAYI]

N-Channel Super Junction Power MOSFET;


型号：	HY70R102P
厂家：	HUAYI MICROELECTRONICS CO.,LTD.
描述：	N-Channel Super Junction Power MOSFET
文件：	总12页 (文件大小：1954K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HY70R102P/B/D/U

N-Channel Super Junction Power MOSFET

Feature Description

Pin Description



700V/5A

R_{DS(ON)= 0.92Ω(typ.)@VGS = 10V}



100% Avalanche Tested

Reliable and Rugged

Lead Free and Green Devices Available

(RoHS Compliant)

TO-220FB-3L

TO-263-2L

TO-252-2L

TO-251-3L

Applications



PFC Power Supply Stages

Switching Applications

Motor Control

DC—DC Converters

N-Channel MOSFET

Ordering and Marking Information

Package Code

P: TO-220FB-3L

D: TO-252-2L

B: TO-263-2L

U: TO-251-3L

HY70R102

YYXXXJWW G

HY70R102

YYXXXJWW G

Date Code

YYXXX WW

Assembly Material

G: Halogen Free

HY70R102

YYXXXJWW G

HY70R102

YYXXXJWW G

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-

Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-

ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”

to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous

material and total of Br and Cl does not exceed 1500ppm by weight).

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr

-oduct and/or to this document at any time without notice.

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HY70R102P/B/D/U

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (Tc=25°C Unless Otherwise Noted)

VDSS

VGSS

Drain-Source Voltage

700

±30

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Source Current-Continuous(Body Diode)

150

°C

TSTG

-55 to 150

Tc=25°C

Mounted on Large Heat Sink

Tc=25°C

Tc=100°C

Tc=25°C

Tc=100°C

IDM

Pulsed Drain Current *

Continuous Drain Current

3.2

Maximum Power Dissipation

R_JC

R_JA

EAS

Thermal Resistance, Junction-to-Case

Junction-to-Ambient **

3.2

62.5

110

192

°C/W

TO-220 , TO-263

TO-251 , TO-252

L=50mH

Junction-to-Ambient

Single Pulsed-Avalanche Energy ***

Note:

Repetitive rating；pulse width limited by max. junction temperature.

Surface mounted on FR-4 board.

***

Limited by TJmax , starting TJ=25°C , L = 50mH, RG= 25Ω, VGS =10V.

Electrical Characteristics(Tc =25°C Unless Otherwise Noted)

HY70R102

Typ.

Symbol

Parameter

Test Conditions

Unit

Min

Max

Static Characteristics

V_GS=0V,I_DS=250uA

VDS=700V,VGS=0V

BVDSS

Drain-Source Breakdown Voltage

700

μA

IDSS

Drain-to-Source Leakage Current

TJ=55°C

VDS=VGS, I_DS=250μA

VGS=±30V,VDS=0V

V_GS=10V,I_DS=2.5A

VGS(th)

IGSS

Gate Threshold Voltage

3.3

Gate-Source Leakage Current

Drain-Source On-State Resistance

±100

1.0

RDS(ON)*

0.92

Diode Characteristics

Diode Forward Voltage

ISD=5A,VGS=0V

0.9

1.3

VSD*

trr

Reverse Recovery Time

Reverse Recovery Charge

175.7

1.3

μC

ISD=5A,dISD/dt=100A/μs

Qrr

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Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)

HY70R102

Typ.

Symbol

Parameter

Test Conditions

Unit

Min

Max

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

4.7

363.6

26.6

1.1

Ciss

Coss

Crss

td(ON)

Input Capacitance

VGS=0V,

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

VDS=50V,

Frequency=1.0MHz

VDD=350V,RG=25Ω,

IDS=3A,VGS=10V

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics

Qgs

Qgd

Total Gate Charge

7.3

1.9

V_DS=350V, V_GS=10V，

Gate-Source Charge

Gate-Drain Charge

I_D=3A,

Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%

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Typical Operating Characteristics

Figure 1: Power Dissipation

Figure 2: Drain Current

Tc-Case Temperature(℃)

Figure 3: Safe Operation Area

Figure 4: Thermal Transient Impedance

VDS-Drain-Source Voltage(V)

Tj-Junction Temperature (℃)

Figure 5: Output Characteristics

Figure 6: Drain-Source On Resistance

VDS-Drain-Source Voltage (V)

ID-Drain Current(A)

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Typical Operating Characteristics(Cont.)

Figure 7 : On-Resistance vs. Temperature

Figure 8 : Source-Drain Diode Forward

Tj-Junction Temperature (℃)

VSD-Source-Drain Voltage(V)

Figure 9 : Capacitance Characteristics

Figure 10 : Gate Charge Characteristics

10⁴

10³

C_iss

10²

10¹

10⁰

10^-1

C_oss

C_rss

100

VDS-Drain-Source Voltage (V)

QG-Gate Charge (nC)

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HY70R102P/B/D/U

Avalanche Test Circuit and Waveforms

Switching Time Test Circuit and Waveforms

Gate Charge Test Circuit and Waveforms

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HY70R102P/B/D/U

Device Per Unit

Package Type

Unit

Quantity

TO-220FB-3L

Tube

Package Information

TO-220FB-3L

COMMON DIMENSIONS

NOM

4.57

SYMBOL

MIN

4.37

1.25

2.20

0.70

1.17

0.40

15.10

8.80

5.50

9.70

7.00

MAX

4.77

1.45

2.60

0.95

1.47

0.65

16.10

9.40

1.30

2.40

0.80

1.27

0.50

15.60

9.10

10.00

10.30

2.54 BSC

5.08 BSC

6.50

6.25

12.75

6.85

13.80

3.40

3.80

3.00

13.50

3.10

ΦP

3.40

2.60

3.60

2.80

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HY70R102P/B/D/U

Device Per Unit

Package Type

Unit

Quantity

TO-263-2L

Reel

Package Information

TO-263-2L

COMMON DIMENSIONS

NOM

4.57

1.27

2.69

0.13

0.81

1.27

0.38

8.7

SYMBOL

MIN

4.37

1.22

2.49

MAX

4.77

1.42

2.89

0.25

0.96

1.47

0.53

8.9

0.7

1.17

0.3

8.5

6.6

9.86

7.06

10.16

10.36

2.54 BSC

15.1

1.27

2.3

14.7

1.07

15.5

1.47

2.6

1.4

1.55

0.25 BSC

5°

1.7

0°

9°

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HY70R102P/B/D/U

Device Per Unit

Package Type

Unit

Quantity

TO-252-2L

Tube

Package Information

TO-252-2L

COMMON DIMENSIONS

NOM

2.30

SYMBOL

MIN

2.20

0.00

0.97

0.68

5.20

0.43

5.98

MAX

2.40

0.20

1.17

0.90

5.50

0.63

6.22

1.07

0.78

5.33

0.53

6.10

5.30REF

6.60

6.40

4.63

6.80

2.286BSC

10.10

1.50

2.90REF

0.51BSC

9.40

1.38

10.50

1.75

0.88

1.28

1.00

1.95

8°

1.65

0°

1.80

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HY70R102P/B/D/U

Device Per Unit

Package Type

Unit

Quantity

TO-251-3L

Tube

Package Information

TO-251-3L

COMMON DIMENSIONS

NOM

2.30

SYMBOL

MIN

2.20

0.97

0.68

0.00

5.20

0.43

5.98

MAX

2.40

1.17

0.90

0.10

5.50

0.63

6.22

1.07

0.78

b2'

0.04

5.33

0.53

6.10

5.30REF

6.60

6.40

4.63

6.80

2.286BSC

16.52

9.40

16.22

9.15

0.88

1.65

16.82

9.65

1.28

1.95

1.02

1.80

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Classification Profile

Classification Reflow Profiles

Profile Feature

Preheat & Soak

Sn-Pb Eutectic Assembly

Pb-Free Assembly

100 °C

150 °C

200 °C

Temperature min (Ts min

)

Temperature max (Ts max

)

60-120 seconds

Time (Ts min to Ts max) (t

Average ramp-up rate

3 °C/second max.

3°C/second max.

(Ts maxto T )

Liquidous temperature (T

Time at liquidous (t

Peak package body Temperature

(T )*

Time (t

classification temperature (T

Average ramp-down rate (T

Time 25°C to peak temperature

)

183 °C

217 °C

)

60-150 seconds

See Classification Temp in table 1 See Classification Temp in table 2

)** within 5°C of the specified

20** seconds

30** seconds

)

to Ts max

)

6 °C/second max.

6 minutes max.

6 °C/second max.

8 minutes max.

*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (t

) is defined as a supplier minimum and a user maximum.

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Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)

Package

Thickness

＜2.5 mm

≥2.5 mm

Volume mm³

<350

Volume mm³

≥350

235 °C

220 °C

Table 2.Pb-free Process – Classification Temperatures (Tc)

Package

Thickness

<1.6 mm

Volume mm³

<350

Volume mm³

350-2000

260 °C

Volume mm³

≥2000

260 °C

1.6 mm – 2.5 mm

≥2.5 mm

260 °C

250 °C

245 °C

250 °C

245 °C

Reliability Test Program

Test item

Method

Description

SOLDERABILITY

JESD-22, B102

JESD-22, A108

JESD-22, A102

JESD-22, A104

5 Sec, 245°C

HTRB

PCT

168 Hrs/500 Hrs/1000Hrs, Bias @ 150°C

96 Hrs, 100%RH, 2atm, 121°C

500 Cycles, -55°C~150°C

TCT

Customer Service

Worldwide Sales and Service: sales@hymexa.com

Technical Support: Technology@hymexa.com

Xi'an Huayi Microelectronics Co., Ltd.

No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China

TEL: (86-029) 86685706

FAX: (86-029) 86685705

E-mail: sales@hymexa.com

Web net: www.hymexa.com

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