HYG420N06LR1D [HUAYI]
N-Channel Enhancement Mode MOSFET;
| 型号： | HYG420N06LR1D |
| 厂家： | 
HUAYI MICROELECTRONICS CO.,LTD. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：1042K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HYG420N06LR1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
Pin Description
z
60V/22A
RDS(ON)= 35mΩ(typ.)@VGS = 10V
RDS(ON)= 44mΩ(typ.)@VGS = 4.5V
z
z
z
100% Avalanche Tested
Reliable and Rugged
S
D
G
S
D
G
S
D
G
Halogen free and Green Devices Available
(RoHS Compliant)
TO-252-2L
TO-251-3L
TO-251-3S
Applications
z
z
Power Management for DC/DC
Synchronous Rectification
N-Channel MOSFET
Ordering and Marking Information
Package Code
D: TO-252-2L
U: TO-251-3L
V:TO-251-3S
D
U
V
G420N06 G420N06
G420N06
XYMXXXXXX
Date Code
XYMXXXXXX
XYMXXXXXX
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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V1.1
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HYG420N06LR1D/U/V
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
60
±20
V
V
Gate-Source Voltage
Junction Temperature Range
Storage Temperature Range
Source Current-Continuous(Body Diode)
-55 to 175
-55 to 175
22
°C
°C
A
TSTG
IS
Tc=25°C
Mounted on Large Heat Sink
IDM Pulsed Drain Current *
Tc=25°C
Tc=25°C
Tc=100°C
Tc=25°C
Tc=100°C
80
22
A
A
ID
Continuous Drain Current
15.5
37.5
18.7
4
A
W
PD
Maximum Power Dissipation
W
RTJC
RTJA
EAS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
Single Pulsed-Avalanche Energy ***
°C/W
°C/W
mJ
110
23.5
L=0.3mH
Note:
*
**
Repetitive rating˗pulse width limited by max. junction temperature.
Surface mounted on FR-4 board.
***
Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
HYG420N06LR1
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
VGS=0V,IDS=250μA
BVDSS
Drain-Source Breakdown Voltage
60
-
-
-
-
1
V
VDS=60V,VGS=0V
μA
μA
V
IDSS
Drain-to-Source Leakage Current
TJ=125°C
-
-
50
VDS=VGS, IDS=250μA
VGS=f20V,VDS=0V
VGS=10V,IDS=10A
VGS=4.5V,IDS=10A
VGS(th)
IGSS
Gate Threshold Voltage
1
-
1.8
-
2.5
±100
40
Gate-Source Leakage Current
nA
-
35
44
RDS(ON)*
Drain-Source On-State Resistance
mΩ
-
50
Diode Characteristics
Diode Forward Voltage
ISD=10A,VGS=0V
-
-
-
0.86
50
1.2
V
VSD*
trr
Reverse Recovery Time
Reverse Recovery Charge
-
-
ns
nC
ISD=10A,dISD/dt=100A/μs
Qrr
74
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V1.1
2
HYG420N06LR1D/U/V
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
HYG420N06LR1
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Dynamic Characteristics
VGS=0V,VDS=0V,F=1
MHz
RG
Gate Resistance
-
1.38
-
Ω
Ciss
Coss
Crss
td(ON)
Tr
Input Capacitance
-
-
-
-
-
-
-
843
91
62
21
25
27
31
-
-
-
-
-
-
-
VGS=0V,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
VDS=25V,
pF
Frequency=1.0MHz
VDD=20V,RG=4Ω,
ns
IDS=10A,VGS=10V
td(OFF)
Tf
Turn-off Delay Time
Turn-off Fall Time
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
-
-
-
16
2.1
4.4
-
-
-
V
DS =48V, VGS=10Vˈ
nC
Gate-Source Charge
Gate-Drain Charge
ID=10A
Note: *Pulse testˈpulse width ≤ 300usˈduty cycle ≤ 2%
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V1.1
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HYG420N06LR1D/U/V
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Tc-Case Temperature(ć)
Tc-Case Temperature(ć)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
VDS-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
VDS-Drain-Source Voltage (V)
ID-Drain Current(A)
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V1.1
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HYG420N06LR1D/U/V
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction Temperature (ć)
VSD-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
VDS-Drain-Source Voltage (V)
QG-Gate Charge (Q&)
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V1.1
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HYG420N06LR1D/U/V
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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V1.1
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HYG420N06LR1D/U/V
Device Per Unit
Package Type
TO-252-2L
Unit
Tube
Quantity
75
TO-252-2L
Reel
Tube
Tube
2500
75
TO-251-3L
TO-251-3S
75
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.00
0.97
0.68
5.20
0.43
5.98
NOM
2.30
-
MAX
2.40
0.20
1.17
0.90
5.50
0.63
6.22
A
A1
A2
b
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
-
b3
c
D
D1
E
6.40
4.63
6.80
-
E1
e
2.286BSC
10.10
1.50
2.90REF
0.51BSC
-
H
9.40
1.38
10.50
1.75
L
L1
L2
L3
L4
L5
θ
0.88
-
1.28
1.00
1.95
8°
-
1.65
0°
1.80
-
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V1.1
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HYG420N06LR1D/U/V
TO-251-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
0.00
0.00
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
0.10
0.10
5.50
0.63
6.22
A
A2
b
1.07
0.78
b2
b2'
b3
c
0.04
0.04
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
16.52
9.40
H
16.22
9.15
0.88
1.65
16.82
9.65
1.28
1.95
L1
L3
L5
1.02
1.80
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V1.1
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HYG420N06LR1D/U/V
TO-251-3S
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
5.50
0.63
6.22
A
A2
b
1.07
0.78
b3
c
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
11.22
4.10
H
10.00
3.90
0.88
1.65
11.44
4.30
1.28
1.95
L1
L3
L5
1.02
1.80
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V1.1
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HYG420N06LR1D/U/V
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (Tsmin
)
Temperature max (Tsmax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(Tsmax to T
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
P
)
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1 See Classification Temp in table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to Tsmax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.
p
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V1.1
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HYG420N06LR1D/U/V
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
˘2.5 mm
≥2.5 mm
Volume mmϢ
<350
Volume mmϢ
ı350
235 °C
220 °C
220 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mmϢ
<350
Volume mmϢ
350-2000
260 °C
Volume mmϢ
ı2000
260 °C
260 °C
1.6 mm – 2.5 mm
ı2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
HTRB
PCT
168 Hrs /500 Hrs /1000 Hrs, Bias @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Technical Support: Technology@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
Web net: www.hymexa.com
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V1.1
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