HYG800P10LR1D [HUAYI]
P-Channel Enhancement Mode MOSFET;型号: | HYG800P10LR1D |
厂家: | HUAYI MICROELECTRONICS CO.,LTD. |
描述: | P-Channel Enhancement Mode MOSFET |
文件: | 总11页 (文件大小:1480K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HYG800P10LR1D/U/V
P-Channel Enhancement Mode MOSFET
Feature
Pin Description
-100V/-20A
RDS(ON)= 77mΩ(typ.) @ VGS = -10V
RDS(ON)= 86mΩ(typ.) @ VGS = -4.5V
100% avalanche tested
Reliable and Rugged
Halogen Free and Green Devices Available
(RoHS Compliant)
TO-252-2L
TO-251-3L
TO-251-3S
Applications
Power Management in DC/DC converter.
Load switching.
P-Channel MOSFET
U: TO-251-3L
Ordering and Marking Information
Package Code
D: TO-252-2L
D
U
V
G800P10
XYMXXXXXX
G800P10
XYMXXXXXX
G800P10
XYMXXXXXX
V: TO-251-3S
Date Code
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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V1.0
1
HYG800P10LR1D/U/V
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
-100
±20
V
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Drain Current-Continuous
175
°C
°C
A
TSTG
IS
-55 to 175
-20
Tc=25°C
Mounted on Large Heat Sink
Tc=25°C
Tc=25°C
Tc=100°C
Tc=25°C
Tc=100°C
-75
-20
A
A
IDM
ID
Pulsed Drain Current *
Continuous Drain Current
-14.1
75
A
W
PD
Maximum Power Dissipation
37.5
2.0
W
RJC
RJA
EAS
°C/W
°C/W
mJ
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
SinglePulsed-Avalanche Energy ***
110
82.9
L=0.3mH
Note:
*
**
Repetitive rating; pulse width limited by max junction temperature.
Surface mounted on FR-4 board.
***
Limited by TJmax , starting TJ=25°C, L = 0.3mH, VD=-80V, VGS=-10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
HYG800P10LR1
Symbol
Parameter
Test Conditions
Unit
Min
Typ
Max
Static Characteristics
VGS=0V,IDS=-250uA
VDS=-100V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-100
-
-
-
-1
V
-
uA
uA
V
IDSS
Drain-to-Source Leakage Current
TJ=125°C
-
-
-50
-3.0
±100
98
VDS=VGS, IDS=-250uA
VGS=±20V,VDS=0V
VGS=-10V,ID= -10A
VGS=-4.5V,ID= -10A
VGS(th)
IGSS
Gate Threshold Voltage
-1.0
-1.8
-
Gate-Source Leakage Current
-
-
-
nA
mΩ
mΩ
77
86
RDS(ON)*
Drain-Source On-state Resistance
110
Diode Characteristics
VSD*
trr
Diode Forward Voltage
ISD= -10A,VGS=0V
-
-
-
-0.82
30
-1.2
V
Reverse Recovery Time
Reverse Recovery Charge
-
-
ns
nC
ISD= -10A,dI/dt=100A/us
Qrr
26
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V1.0
2
HYG800P10LR1D/U/V
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
HYG800P10LR1
Symbol
Parameter
Test Conditions
Unit
Min
Typ
Max
Dynamic Characteristics
VGS=0V,VDS=0V,
F=1MHz
RG
Gate Resistance
-
10.5
-
Ω
Ciss
Coss
Crss
td(ON)
Tr
Input Capacitance
-
-
-
-
-
-
-
3273
111
67
-
-
-
-
-
-
-
VGS=0V,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
VDS=-25V,
pF
Frequency=1MHz
14
21
VDD= -50V,RG=3Ω,
IDS= -10A,VGS=-10V
ns
t
d(OFF)
Turn-off Delay Time
Turn-off Fall Time
20
Tf
10
Gate Charge Characteristics
Qg
Total Gate Charge
-
-
-
42.6
9.2
-
-
-
VDS = -50V, VGS= -10V,
Qgs
Qgd
nC
Gate-Source Charge
Gate-Drain Charge
ID= -10A,
8.8
Note: *Pulse test; pulse width ≤ 300us,duty cycle ≤ 2%
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V1.0
3
HYG800P10LR1D/U/V
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Tc-Case Temperature(℃)
Tc-Case Temperature(℃)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
-VDS-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
-VDS-Drain-Source Voltage (V)
- ID-Drain Current(A)
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V1.0
4
HYG800P10LR1D/U/V
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction Temperature (℃)
-VSD-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
-VDS-Drain-Source Voltage (V)
QG-Gate Charge (nC)
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V1.0
5
HYG800P10LR1D/U/V
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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V1.0
6
HYG800P10LR1D/U/V
Device Per Unit
Package Type
TO-252-2L
Unit
Tube
Tube
Tube
Quantity
75
75
75
TO-251-3L
TO-251-3S
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.00
0.97
0.68
5.20
0.43
5.98
NOM
2.30
-
MAX
2.40
0.20
1.17
0.90
5.50
0.63
6.22
A
A1
A2
b
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
-
b3
c
D
D1
E
6.40
4.63
6.80
-
E1
e
2.286BSC
10.10
1.50
2.90REF
0.51BSC
-
H
9.40
1.38
10.50
1.75
L
L1
L2
L3
L4
L5
θ
0.88
-
1.28
1.00
1.95
8°
-
1.65
0°
1.80
-
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V1.0
7
HYG800P10LR1D/U/V
TO-251-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
0.00
0.00
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
0.10
0.10
5.50
0.63
6.22
A
A2
b
1.07
0.78
b2
b2'
b3
c
0.04
0.04
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
16.52
9.40
H
16.22
9.15
0.88
1.65
16.82
9.65
1.28
1.95
L1
L3
L5
1.02
1.80
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V1.0
8
HYG800P10LR1D/U/V
TO-251-3S
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
5.50
0.63
6.22
A
A2
b
1.07
0.78
b3
c
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
11.22
4.10
H
10.00
3.90
0.88
1.65
11.44
4.30
1.28
1.95
L1
L3
L5
1.02
1.80
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V1.0
9
HYG800P10LR1D/U/V
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (Tsmin
)
Temperature max (Tsmax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
s
)
Average ramp-up rate
3 °C/second max.
3°C/second max.
(Tsmax to T
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
P
)
L
)
183 °C
217 °C
L)
60-150 seconds
60-150 seconds
See Classification Temp in table 1 See Classification Temp in table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to Tsmax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
p
** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.
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V1.0
10
HYG800P10LR1D/U/V
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
<2.5 mm
≥2.5 mm
Volume mm³
<350
Volume mm³
≥350
235 °C
220 °C
220 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
Volume mm³
<350
Volume mm³
350-2000
260 °C
Volume mm³
≥2000
<1.6 mm
260 °C
260 °C
1.6 mm – 2.5 mm
≥2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
PRECON
HTRB
JESD-22, B102
JESD-22, A113
JESD-22, A108
JESD-22, A108
5 Sec, 245°C
30°C/60%/192Hrs
168 Hrs/500hr/1000hr, Bias @ 150°C
168 Hrs/500hr/1000hr, Vgs100% @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
HTGB
PCT
TCT
JESD-22, A102
JESD-22, A104
500 Cycles, -55°C~150°C
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Technical Support: Technology@hymexa.com
Xi'an Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
Web net: www.hymexa.com
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V1.0
11
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