GM76U8128CLLG-10 [HYNIX]

Standard SRAM, 128KX8, 100ns, CMOS, PDSO32;
GM76U8128CLLG-10
型号: GM76U8128CLLG-10
厂家: HYNIX SEMICONDUCTOR    HYNIX SEMICONDUCTOR
描述:

Standard SRAM, 128KX8, 100ns, CMOS, PDSO32

静态存储器 光电二极管 内存集成电路
文件: 总11页 (文件大小:101K)
中文:  中文翻译
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GM76U8128CL/CLL  
LG Semicon Co.,Ltd.  
131,072 WORDS x 8 BIT  
CMOS STATIC RAM  
Description  
Pin Configuration  
The GM76U8128CL/CLL is a 1,048,576 bits static  
random access memory organized as 131,072 words  
by 8 bits. Using a 0.6um advanced CMOS technology  
and it provides high speed operation with minimum  
cycle time of 85/100ns. The device is placed in a low  
power standby mode with /CS1 high or CS2 low and  
the output enable (/OE) allows fast memory access.  
Thus it is suitable for high speed and low power  
applications, especially where battery back-up is  
required.  
NC  
A16  
A14  
1
32 VCC  
2
3
4
5
6
31  
A15  
30 CS2  
29 /WE  
A12  
A7  
28  
A13  
A6  
27 A8  
26 A9  
25 A11  
A5  
A4  
A3  
A2  
A1  
A0  
7
8
Features  
9
24  
/OE  
* Fast Speed : 85/100ns  
10  
11  
23  
A10  
* Low Power Standby and Low Power Operation  
Standby : 66uW Max. at TA = - 40 ~ 85C(LLE/LLI)  
99uW Max. at TA = - 40 ~ 85C(LE/LI)  
49.5uW Max. at TA = 0 ~ 70C(LL)  
165uW Max. at TA = 0 ~ 70C(L)  
Operation : 132mW (Max)  
22  
/CS1  
12  
21  
I/O7  
I/O0 13  
I/O1 14  
20 I/O6  
19 I/O5  
15  
18  
I/O2  
I/O4  
* Completely Static RAM : No Clock or Timing  
Strobe Required  
16  
17  
VSS  
I/O3  
* Equal Access and Cycle Time  
* TTL compatible inputs and outputs  
* Capability of Battery Back-up Operation  
* Single + 3.0V+/-0.3V Operation  
* Standard 32DIP, SOP and TSOP-I,STSOP-I  
* Temperature Range  
(Top View)  
Block Diagram  
A0  
A1  
A2  
Commercial(0¡ 70C) : GM76U8128C  
Extended (-25 ~ 85C) : GM76U8128C-E  
Industrial (-40 ~ 85C) : GM76U8128C-I  
MEMORY CELL ARRAY  
1024 x 128 x 8  
10  
1024  
X
Decoder  
(128K x 8)  
Address  
Buffer  
Pin Description  
Pin  
A0-A16  
/WE  
Function  
Address Inputs  
A14  
A15  
A16  
128 x 8  
7
128  
Y
Column Select  
Decorder  
Write Enable Input  
Chip Select Input  
Output Enable Input  
Data Inputs/Outputs  
Power Supply (2.7V ~3.3V)  
Ground  
/CS1, CS2  
/OE  
/CS1, CS2  
8
/CS1  
CS2  
Chip  
Control  
I/O0-I/O7  
VCC  
/OE, /WE  
/OE  
I/O Buffer  
Chip  
Control  
/WE  
VSS  
NC  
No Connection  
109  
GM76U8128CL/CLL  
Absolute Maximum Ratings*  
Symbol  
Parameter  
Rating  
0 ~ 70  
Unit  
C
GM76U8128C  
GM76U8128C-E  
GM76U8128C-I  
TA  
Ambient Temperature under Bias  
-25 ~ 85  
C
-40 ~ 85  
C
TSTG  
TSOL  
VCC  
VIN  
VI/O  
PD  
Storage Temperature  
Soldering Temperature and Time  
Supply Voltage  
-55 ~ 150  
260, 10 (at lead)  
-0.5 ~ 4.6  
C
C, S  
V
Input Voltage  
-0.5 ~ VCC + 0.5  
-0.5 ~ VCC + 0.5  
0.7  
V
Input and Output Voltage  
Power Dissipation  
V
W
*: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.  
This is a stress rating only and functional operation of the device at these or any other conditions above those indi-  
cated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions  
for extended periods may affect reliability.  
Recommended DC Operating Conditions ( TA = - 40 ~ 85C)  
Symbol  
VCC  
Parameter  
Supply Voltage  
Min  
2.7  
Typ  
Max  
3.3  
Unit  
V
3.0  
VIH  
Input High Voltage  
Input Low Voltage  
2.2  
-
-
V
CC + 0.3  
V
VIL  
-0.3*  
0.4  
V
*Note :VIL(min) = -3.0V for <= 50ns pulse  
Truth Table  
/CS1  
L
CS2  
H
/OE  
L
/WE  
H
A0 to A16  
DATA I/O  
Output Data  
Input Data  
Hi-Z  
MODE  
Stable  
Stable  
Stable  
-
Read  
Write  
L
H
X
L
L
H
H
H
OutputDisable  
H
X
X
X
Hi-Z  
Standby  
X
L
X
X
-
Hi-Z  
*Note: X means don't care  
110  
GM76U8128CL/CLL  
DC Operating Characteristics (VCC = 3.0V+/-0.3V, TA = - 40 ~ 85C)  
Symbol  
Parameter  
Conditions  
Min *Typ Max Unit  
II(L)  
Input Leakage Current  
-1  
-
1
uA  
VIN = 0 to VCC  
IO(L)  
Output Leakage Current  
/CS1 = VIH or CS2 = VIL  
/OE = VIH, VSS <=VOUT<=VCC  
-1  
-
1
uA  
V
OH  
High Level Output Voltage  
Low Level Output Voltage  
2.2  
-
-
-
-
V
V
I
OH = -1.0mA  
VOL  
0.4  
IOL = 2.1mA  
Operating Supply Current  
ICC  
/CS1 = VIL and CS2 = VIH  
OUT = 0mA  
-
-
5
mA  
V
IN = VIH/VIL, I  
I
CC1  
CC2  
/CS1 = VIL and CS2 = VIH  
VIN = VIH/VIL  
-
-
40  
mA  
IOUT = 0mA  
tcycle = Min, cycle  
Average Operating Current  
I
/CS1 = 0.2V, CS2 = VCC-0.2V  
VIN = VCC - 0.2V/0.2V  
-
-
-
-
5
mA  
I
OUT = 0mA  
tcycle = 1us  
Standby Current(TTL)  
Standby  
I
CCS1  
CCS2  
0.5  
mA  
uA  
/CS1 = VIH, CS2 = VIL  
L - Version  
LL - Version  
-
-
I
50  
15  
-
-
GM76U8128C  
/CS1 = VCC-0.2V,  
CS2 = 0.2V  
Current(CMOS)  
GM76U8128C-E  
GM76U8128C-I  
L - Version  
LL - Version  
-
-
30  
20  
-
-
uA  
*Typ. Values are measured at 25C  
Capacitance (f = 1MHZ, TA = 25C)  
Symbol  
Parameter  
Input Capacitance  
Output Capacitance  
Test Conditions  
= 0V  
= 0V  
Min  
Max  
Unit  
pF  
CIN  
V
I
-
-
6
8
CI/O  
VO  
pF  
*Note: This parameter is sampled and not 100% tested.  
AC Operating Characteristics  
Test Conditions (VCC = 3.0V+/-0.3V, TA = - 40 ~ 85C, unless otherwise noted.)  
Parameter  
Value  
Input Pulse Level  
0.4 to 2.2V  
Input Rise and Fall Time  
Input and Output Timing Reference Levels  
Output Load  
5ns  
1.5V  
CL = 100 pF + 1TTL Load  
111  
GM76U8128CL/CLL  
AC Operating Characteristics (VCC = 3.0V+/-0.3V, TA = - 40 ~ 85C)  
Read Cycle  
GM76U8128C-85  
GM76U8128C-10  
Symbol  
Parameter  
Read Cycle Time  
Unit  
Min  
Max  
-
Min  
Max  
-
t
t
t
t
t
t
t
t
t
t
t
t
RC  
85  
-
100  
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
AA  
Address Access Time  
85  
85  
85  
45  
-
100  
100  
100  
50  
-
ACS1  
ACS2  
OE  
Chip Select 1 Access Time  
Chip Select 2 Access Time  
Output Enable Access Time  
Chip Select 1 Output Setup Time  
Chip Select 1 Output Floating  
Chip Select 2 Output Setup Time  
Chip Select 2 Output Floating  
Output Enable Output Setup Time  
Output Enable Output Floating  
Output Hold Time  
-
-
-
-
-
-
CLZ1  
CHZ1  
CLZ2  
CHZ2  
OLZ  
OHZ  
OH  
10  
-
10  
-
30  
-
35  
-
10  
-
10  
-
30  
-
35  
-
0
0
-
30  
-
-
35  
-
10  
10  
Write Cycle  
GM76U8128C-85  
GM76U8128C-10  
Symbol  
Parameter  
Unit  
Min  
85  
75  
75  
70  
0
Max  
Min  
100  
85  
85  
80  
0
Max  
t
t
t
t
t
t
t
t
t
t
t
WC  
CW1  
CW2  
AW  
AS  
Write Cycle Time  
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Chip Select Time 1  
Chip Select Time 2  
-
-
Address Enable Time  
Address Setup Time  
Write Pulse Width  
-
-
-
-
WP  
60  
0
-
70  
0
-
WR  
DW  
DH  
Write Recovery Time  
Input Data Setup Time  
Input Data Hold Time  
Write to Output in High-Z  
Output Active from End of Write  
-
-
35  
0
-
40  
0
-
-
-
WHZ  
OW  
-
30  
-
-
35  
-
0
0
112  
GM76U8128CL/CLL  
Timing Waveforms  
Read Cycle (Note 1)  
t
RC  
ADD  
t
AA  
t
t
ACS1  
/CS1  
t
t
CLZ1  
CLZ2  
ACS2  
t
t
CHZ1  
CS2  
t
OE  
CHZ2  
t
OLZ  
/OE  
t
OHZ  
OH  
t
High-Z  
VALID DATA  
DOUT  
113  
GM76U8128CL/CLL  
Write Cycle (1) (/WE Controlled) (Notes 2, 3, 4)  
t
WC  
ADD  
t
AS  
t
WR  
t
AW  
t
WP  
/WE  
t
t
CW1  
/CS1  
CS2  
CW2  
t
WHZ  
t
OW  
DOUT  
t
DW  
t
DH  
DIN  
VALID DATA  
114  
GM76U8128CL/CLL  
Write Cycle (2) (/CS1 Controlled) (Notes 4)  
t
WC  
ADD  
t
AS  
t
WR  
t
WP  
/WE  
/CS1  
CS2  
t
CW1  
t
CW2  
t
WHZ  
t
CLZ  
DOUT  
t
DW  
t
DH  
DIN  
VALID DATA  
115  
GM76U8128CL/CLL  
Write Cycle (3) (CS2 Controlled) (Notes 4)  
t
WC  
ADD  
t
AS  
t
WR  
t
WP  
/WE  
t
t
CW2  
CS2  
CW1  
/CS1  
t
WHZ  
t
CLZ  
DOUT  
t
DW  
t
DH  
DIN  
VALID DATA  
Notes:  
1. /WE is High for Read Cycle.  
2. Assuming that /CS1 Low transition or CS2 High transition occurs coincident with or after /WE Low  
transition. Outputs remain in a high impedance state.  
3. Assuming that /CS1 High transition or CS2 Low transition occurs coincident with or prior to /WE High  
transition. Outputs remain in a high impedance state.  
4. Assuming that /OE is high for write cycle. Outputs are in a high impedance state during this period.  
116  
GM76U8128CL/CLL  
Data Retention Characteristics  
Symbol  
Parameter  
Min Typ Max Unit  
2.0  
-
3.3  
V
VCCR  
Data Retention Supply Voltage  
L - Version  
LL - Version  
-
-
1
0.5  
50  
15*  
GM76U8128C  
Data Retention  
ICCR  
Current  
VCC=3.0V  
uA  
L - Version  
LL - Version  
GM76U8128C-E  
-
-
1
0.5  
30  
20*  
GM76U8128C-I  
Chip Select to Data Retention Time  
Operation Recovery Time  
0
-
-
-
-
ns  
ns  
tCDR  
tR  
tRC**  
* 3uA max at T  
A
= 0 ~ 40C  
** tRC = Read Cycle  
* Low VCC Data Retention Mode: (1) /CS1 Controlled  
Data Retention Mode  
t
CDR  
t
R
VCC  
2.7V  
2.2V  
VCCR1  
/CS1>=VCCR - 0.2V  
/CS1  
0V  
* Low VCC Data Retention Mode: (2) CS2 Controlled  
Data Retention Mode  
t
CDR  
t
R
VCC  
2.7V  
CS2  
VCCR2  
0.4V  
0V  
CS2 <= 0.2V  
Notes: In Data Retention Mode, CS2 controls the Address, /WE, /CS1, /OE and DIN buffer. If CS2 controls  
data retention mode, VIN for these inputs can be in the high impedance state. If /CS1 controls the  
_
>
data retention mode, CS2 must satisfy either CS2 VCCR - 0.2V or CS2<=0.2V. The other input levels  
(Address, /WE, /OE, I/O) can be in the high impedance state.  
117  
GM76U8128CL/CLL  
Package Dimensions  
Unit: Inches (mm)  
32 DIP  
0 ~ 15 o  
1.645(41.78) MIN  
1.665(42.29) MAX  
0.045(1.14) MIN  
0.055(1.40) MAX  
0.008(0.200) MIN  
0.015(0.380) MAX  
0.15(3.81)  
TYP  
0.165(4.191) MIN  
0.190(4.83) MAX  
0.015(0.38)  
0.125(3.18) MIN  
0.135(3.43) MAX  
0.016(0.41) MIN  
0.020(0.51) MAX  
0.100(2.54)  
TYP  
MIN  
32 SOP  
0.02(0.53) MIN  
0.04(1.04) MAX  
0 ~ 8  
0.004(0.10) MIN  
0.010(0.254) MAX  
0.799(20.30) MIN  
0.815(20.70) MAX  
0.086(2.18) MIN  
0.090(2.29) MAX  
0.014(0.35) MIN  
0.020(0.50) MAX  
0.050(1.27)  
TYP  
0.004(0.102) MIN  
0.010(0.254) MAX  
118  
GM76U8128CL/CLL  
32 TSOP I (8x20mm)  
32  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
/OE  
A10  
/CS1  
I/O7  
A11  
A9  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A8  
A13  
/WE  
CS2  
A15  
VCC  
N.C  
I/O6  
I/O5  
I/O4  
I/O3  
VSS  
I/O2  
I/O1  
I/O0  
A0  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A1  
A2  
A3  
0.720(18.30) MIN  
0.728(18.50) MAX  
0.006(0.15) MIN  
0.000(0.00) MAX  
0.780(19.80) MIN  
0.795(20.20) MAX  
0.039(1.0) MIN  
0.047(1.2) MAX  
0.016(0.40) MIN  
0.024(0.60) MAX  
32Small TSOP-I(8x13.4mm)  
32  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
/OE  
A10  
/CS1  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
VSS  
I/O2  
I/O1  
I/O0  
A0  
A1  
A2  
A3  
A11  
A9  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A8  
A13  
/WE  
CS2  
A15  
VCC  
N.C  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
0.461(11.70) MIN  
0.467(11.86) MAX  
0.002(0.05) MIN  
0.006(0.15) MAX  
0.527(13.30) MIN  
0.528(13.50) MAX  
0.035(1.2) MIN  
0.044(1.0) MAX  
0.020(0.6) MIN  
0.019(0.4) MAX  
119  

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