GM76U8128CLLG-10 [HYNIX]
Standard SRAM, 128KX8, 100ns, CMOS, PDSO32;型号: | GM76U8128CLLG-10 |
厂家: | HYNIX SEMICONDUCTOR |
描述: | Standard SRAM, 128KX8, 100ns, CMOS, PDSO32 静态存储器 光电二极管 内存集成电路 |
文件: | 总11页 (文件大小:101K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GM76U8128CL/CLL
LG Semicon Co.,Ltd.
131,072 WORDS x 8 BIT
CMOS STATIC RAM
Description
Pin Configuration
The GM76U8128CL/CLL is a 1,048,576 bits static
random access memory organized as 131,072 words
by 8 bits. Using a 0.6um advanced CMOS technology
and it provides high speed operation with minimum
cycle time of 85/100ns. The device is placed in a low
power standby mode with /CS1 high or CS2 low and
the output enable (/OE) allows fast memory access.
Thus it is suitable for high speed and low power
applications, especially where battery back-up is
required.
NC
A16
A14
1
32 VCC
2
3
4
5
6
31
A15
30 CS2
29 /WE
A12
A7
28
A13
A6
27 A8
26 A9
25 A11
A5
A4
A3
A2
A1
A0
7
8
Features
9
24
/OE
* Fast Speed : 85/100ns
10
11
23
A10
* Low Power Standby and Low Power Operation
Standby : 66uW Max. at TA = - 40 ~ 85C(LLE/LLI)
99uW Max. at TA = - 40 ~ 85C(LE/LI)
49.5uW Max. at TA = 0 ~ 70C(LL)
165uW Max. at TA = 0 ~ 70C(L)
Operation : 132mW (Max)
22
/CS1
12
21
I/O7
I/O0 13
I/O1 14
20 I/O6
19 I/O5
15
18
I/O2
I/O4
* Completely Static RAM : No Clock or Timing
Strobe Required
16
17
VSS
I/O3
* Equal Access and Cycle Time
* TTL compatible inputs and outputs
* Capability of Battery Back-up Operation
* Single + 3.0V+/-0.3V Operation
* Standard 32DIP, SOP and TSOP-I,STSOP-I
* Temperature Range
(Top View)
Block Diagram
A0
A1
A2
Commercial(0¡ •70C) : GM76U8128C
Extended (-25 ~ 85C) : GM76U8128C-E
Industrial (-40 ~ 85C) : GM76U8128C-I
MEMORY CELL ARRAY
1024 x 128 x 8
10
1024
X
Decoder
(128K x 8)
Address
Buffer
Pin Description
Pin
A0-A16
/WE
Function
Address Inputs
A14
A15
A16
128 x 8
7
128
Y
Column Select
Decorder
Write Enable Input
Chip Select Input
Output Enable Input
Data Inputs/Outputs
Power Supply (2.7V ~3.3V)
Ground
/CS1, CS2
/OE
/CS1, CS2
8
/CS1
CS2
Chip
Control
I/O0-I/O7
VCC
/OE, /WE
/OE
I/O Buffer
Chip
Control
/WE
VSS
NC
No Connection
109
GM76U8128CL/CLL
Absolute Maximum Ratings*
Symbol
Parameter
Rating
0 ~ 70
Unit
C
GM76U8128C
GM76U8128C-E
GM76U8128C-I
TA
Ambient Temperature under Bias
-25 ~ 85
C
-40 ~ 85
C
TSTG
TSOL
VCC
VIN
VI/O
PD
Storage Temperature
Soldering Temperature and Time
Supply Voltage
-55 ~ 150
260, 10 (at lead)
-0.5 ~ 4.6
C
C, S
V
Input Voltage
-0.5 ~ VCC + 0.5
-0.5 ~ VCC + 0.5
0.7
V
Input and Output Voltage
Power Dissipation
V
W
*: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indi-
cated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
Recommended DC Operating Conditions ( TA = - 40 ~ 85C)
Symbol
VCC
Parameter
Supply Voltage
Min
2.7
Typ
Max
3.3
Unit
V
3.0
VIH
Input High Voltage
Input Low Voltage
2.2
-
-
V
CC + 0.3
V
VIL
-0.3*
0.4
V
*Note :VIL(min) = -3.0V for <= 50ns pulse
Truth Table
/CS1
L
CS2
H
/OE
L
/WE
H
A0 to A16
DATA I/O
Output Data
Input Data
Hi-Z
MODE
Stable
Stable
Stable
-
Read
Write
L
H
X
L
L
H
H
H
OutputDisable
H
X
X
X
Hi-Z
Standby
X
L
X
X
-
Hi-Z
*Note: X means don't care
110
GM76U8128CL/CLL
DC Operating Characteristics (VCC = 3.0V+/-0.3V, TA = - 40 ~ 85C)
Symbol
Parameter
Conditions
Min *Typ Max Unit
II(L)
Input Leakage Current
-1
-
1
uA
VIN = 0 to VCC
IO(L)
Output Leakage Current
/CS1 = VIH or CS2 = VIL
/OE = VIH, VSS <=VOUT<=VCC
-1
-
1
uA
V
OH
High Level Output Voltage
Low Level Output Voltage
2.2
-
-
-
-
V
V
I
OH = -1.0mA
VOL
0.4
IOL = 2.1mA
Operating Supply Current
ICC
/CS1 = VIL and CS2 = VIH
OUT = 0mA
-
-
5
mA
V
IN = VIH/VIL, I
I
CC1
CC2
/CS1 = VIL and CS2 = VIH
VIN = VIH/VIL
-
-
40
mA
IOUT = 0mA
tcycle = Min, cycle
Average Operating Current
I
/CS1 = 0.2V, CS2 = VCC-0.2V
VIN = VCC - 0.2V/0.2V
-
-
-
-
5
mA
I
OUT = 0mA
tcycle = 1us
Standby Current(TTL)
Standby
I
CCS1
CCS2
0.5
mA
uA
/CS1 = VIH, CS2 = VIL
L - Version
LL - Version
-
-
I
50
15
-
-
GM76U8128C
/CS1 = VCC-0.2V,
CS2 = 0.2V
Current(CMOS)
GM76U8128C-E
GM76U8128C-I
L - Version
LL - Version
-
-
30
20
-
-
uA
*Typ. Values are measured at 25C
Capacitance (f = 1MHZ, TA = 25C)
Symbol
Parameter
Input Capacitance
Output Capacitance
Test Conditions
= 0V
= 0V
Min
Max
Unit
pF
CIN
V
I
-
-
6
8
CI/O
VO
pF
*Note: This parameter is sampled and not 100% tested.
AC Operating Characteristics
Test Conditions (VCC = 3.0V+/-0.3V, TA = - 40 ~ 85C, unless otherwise noted.)
Parameter
Value
Input Pulse Level
0.4 to 2.2V
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
5ns
1.5V
CL = 100 pF + 1TTL Load
111
GM76U8128CL/CLL
AC Operating Characteristics (VCC = 3.0V+/-0.3V, TA = - 40 ~ 85C)
Read Cycle
GM76U8128C-85
GM76U8128C-10
Symbol
Parameter
Read Cycle Time
Unit
Min
Max
-
Min
Max
-
t
t
t
t
t
t
t
t
t
t
t
t
RC
85
-
100
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AA
Address Access Time
85
85
85
45
-
100
100
100
50
-
ACS1
ACS2
OE
Chip Select 1 Access Time
Chip Select 2 Access Time
Output Enable Access Time
Chip Select 1 Output Setup Time
Chip Select 1 Output Floating
Chip Select 2 Output Setup Time
Chip Select 2 Output Floating
Output Enable Output Setup Time
Output Enable Output Floating
Output Hold Time
-
-
-
-
-
-
CLZ1
CHZ1
CLZ2
CHZ2
OLZ
OHZ
OH
10
-
10
-
30
-
35
-
10
-
10
-
30
-
35
-
0
0
-
30
-
-
35
-
10
10
Write Cycle
GM76U8128C-85
GM76U8128C-10
Symbol
Parameter
Unit
Min
85
75
75
70
0
Max
Min
100
85
85
80
0
Max
t
t
t
t
t
t
t
t
t
t
t
WC
CW1
CW2
AW
AS
Write Cycle Time
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Select Time 1
Chip Select Time 2
-
-
Address Enable Time
Address Setup Time
Write Pulse Width
-
-
-
-
WP
60
0
-
70
0
-
WR
DW
DH
Write Recovery Time
Input Data Setup Time
Input Data Hold Time
Write to Output in High-Z
Output Active from End of Write
-
-
35
0
-
40
0
-
-
-
WHZ
OW
-
30
-
-
35
-
0
0
112
GM76U8128CL/CLL
Timing Waveforms
Read Cycle (Note 1)
t
RC
ADD
t
AA
t
t
ACS1
/CS1
t
t
CLZ1
CLZ2
ACS2
t
t
CHZ1
CS2
t
OE
CHZ2
t
OLZ
/OE
t
OHZ
OH
t
High-Z
VALID DATA
DOUT
113
GM76U8128CL/CLL
Write Cycle (1) (/WE Controlled) (Notes 2, 3, 4)
t
WC
ADD
t
AS
t
WR
t
AW
t
WP
/WE
t
t
CW1
/CS1
CS2
CW2
t
WHZ
t
OW
DOUT
t
DW
t
DH
DIN
VALID DATA
114
GM76U8128CL/CLL
Write Cycle (2) (/CS1 Controlled) (Notes 4)
t
WC
ADD
t
AS
t
WR
t
WP
/WE
/CS1
CS2
t
CW1
t
CW2
t
WHZ
t
CLZ
DOUT
t
DW
t
DH
DIN
VALID DATA
115
GM76U8128CL/CLL
Write Cycle (3) (CS2 Controlled) (Notes 4)
t
WC
ADD
t
AS
t
WR
t
WP
/WE
t
t
CW2
CS2
CW1
/CS1
t
WHZ
t
CLZ
DOUT
t
DW
t
DH
DIN
VALID DATA
Notes:
1. /WE is High for Read Cycle.
2. Assuming that /CS1 Low transition or CS2 High transition occurs coincident with or after /WE Low
transition. Outputs remain in a high impedance state.
3. Assuming that /CS1 High transition or CS2 Low transition occurs coincident with or prior to /WE High
transition. Outputs remain in a high impedance state.
4. Assuming that /OE is high for write cycle. Outputs are in a high impedance state during this period.
116
GM76U8128CL/CLL
Data Retention Characteristics
Symbol
Parameter
Min Typ Max Unit
2.0
-
3.3
V
VCCR
Data Retention Supply Voltage
L - Version
LL - Version
-
-
1
0.5
50
15*
GM76U8128C
Data Retention
ICCR
Current
VCC=3.0V
uA
L - Version
LL - Version
GM76U8128C-E
-
-
1
0.5
30
20*
GM76U8128C-I
Chip Select to Data Retention Time
Operation Recovery Time
0
-
-
-
-
ns
ns
tCDR
tR
tRC**
* 3uA max at T
A
= 0 ~ 40C
** tRC = Read Cycle
* Low VCC Data Retention Mode: (1) /CS1 Controlled
Data Retention Mode
t
CDR
t
R
VCC
2.7V
2.2V
VCCR1
/CS1>=VCCR - 0.2V
/CS1
0V
* Low VCC Data Retention Mode: (2) CS2 Controlled
Data Retention Mode
t
CDR
t
R
VCC
2.7V
CS2
VCCR2
0.4V
0V
CS2 <= 0.2V
Notes: In Data Retention Mode, CS2 controls the Address, /WE, /CS1, /OE and DIN buffer. If CS2 controls
data retention mode, VIN for these inputs can be in the high impedance state. If /CS1 controls the
_
>
data retention mode, CS2 must satisfy either CS2 VCCR - 0.2V or CS2<=0.2V. The other input levels
(Address, /WE, /OE, I/O) can be in the high impedance state.
117
GM76U8128CL/CLL
Package Dimensions
Unit: Inches (mm)
32 DIP
0 ~ 15 o
1.645(41.78) MIN
1.665(42.29) MAX
0.045(1.14) MIN
0.055(1.40) MAX
0.008(0.200) MIN
0.015(0.380) MAX
0.15(3.81)
TYP
0.165(4.191) MIN
0.190(4.83) MAX
0.015(0.38)
0.125(3.18) MIN
0.135(3.43) MAX
0.016(0.41) MIN
0.020(0.51) MAX
0.100(2.54)
TYP
MIN
32 SOP
0.02(0.53) MIN
0.04(1.04) MAX
0 ~ 8
0.004(0.10) MIN
0.010(0.254) MAX
0.799(20.30) MIN
0.815(20.70) MAX
0.086(2.18) MIN
0.090(2.29) MAX
0.014(0.35) MIN
0.020(0.50) MAX
0.050(1.27)
TYP
0.004(0.102) MIN
0.010(0.254) MAX
118
GM76U8128CL/CLL
32 TSOP I (8x20mm)
32
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
/OE
A10
/CS1
I/O7
A11
A9
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A8
A13
/WE
CS2
A15
VCC
N.C
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
A16
A14
A12
A7
A6
A5
A4
A1
A2
A3
0.720(18.30) MIN
0.728(18.50) MAX
0.006(0.15) MIN
0.000(0.00) MAX
0.780(19.80) MIN
0.795(20.20) MAX
0.039(1.0) MIN
0.047(1.2) MAX
0.016(0.40) MIN
0.024(0.60) MAX
32Small TSOP-I(8x13.4mm)
32
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
/OE
A10
/CS1
I/O7
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
A1
A2
A3
A11
A9
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A8
A13
/WE
CS2
A15
VCC
N.C
A16
A14
A12
A7
A6
A5
A4
0.461(11.70) MIN
0.467(11.86) MAX
0.002(0.05) MIN
0.006(0.15) MAX
0.527(13.30) MIN
0.528(13.50) MAX
0.035(1.2) MIN
0.044(1.0) MAX
0.020(0.6) MIN
0.019(0.4) MAX
119
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