HMT125R7TFR4A-H9 [HYNIX]
240pin DDR3L SDRAM Registered DIMM; 240PIN DDR3L SDRAM DIMM注册
| 型号： | HMT125R7TFR4A-H9 |
| 厂家： | 
HYNIX SEMICONDUCTOR |
| 描述： | 240pin DDR3L SDRAM Registered DIMM |
| 文件： | 总69页 (文件大小：1353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
240pin DDR3L SDRAM Registered DIMM
DDR3L SDRAM Registered DIMM
Based on 1Gb T-die
HMT112R7TFR8A
HMT125R7TFR8A
HMT125R7TFR4A
HMT151R7TFR8A
HMT151R7TFR4A
*Hynix Semiconductor reserves the right to change products or specifications without notice
Rev. 0.1 / Dec. 2009
1
Revision History
Revision No.
History
Draft Date
Remark
0.1
Initial Release
Dec. 2009
Preliminary
Rev. 0.1 / Dec. 2009
2
Description
Hynix Registered DDR3L SDRAM DIMMs (Registered Double Data Rate Synchronous DRAM Dual In-Line
Memory Modules) are low power, high-speed operation memory modules that use Hynix DDR3L SDRAM
devices. These Registered SDRAM DIMMs are intended for use as main memory when installed in systems
such as servers and workstations.
Features
• Power Supply: VDD=1.35V (1.283V to 1.45V)
• VDDQ = 1.35V (1.283V to 1.45V)
• Backward Compatible with 1.5V DDR3 Memory Module
• VDDSPD=3.0V to 3.6V
• Functionality and operations comply with the DDR3L SDRAM datasheet
• 8 internal banks
• Data transfer rates: PC3L-10600, PC3L-8500
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Supports ECC error correction and detection
• On-Die Termination (ODT)
• Temperature sensor with integrated SPD
* This product is in compliance with the RoHS directive.
Ordering Information
# of
ranks
Part Number
Density Organization
Component Composition
FDHS
HMT112R7TFR8A-G7/H9
HMT125R7TFR8A-G7/H9
HMT125R7TFR4A-G7/H9
HMT151R7TFR4A-G7/H9
HMT151R7TFR8A-G7/H9
1GB
2GB
2GB
4GB
4GB
128Mx72
256Mx72
256Mx72
512Mx72
512Mx72
128Mx8(H5TC1G83TFR)*9
128Mx8(H5TC1G83TFR)*18
256Mx4(H5TC1G43TFR)*18
256Mx4(H5TC1G43TFR)*36
128Mx8(H5TC1G83TFR)*36
1
2
2
2
4
X
X
X
O
O
* In order to uninstall FDHS, please contact sales administrator
Rev. 0.1 / Dec. 2009
3
Key Parameters
CAS
Latency
(tCK)
tCK
(ns)
tRCD
(ns)
tRP
(ns)
tRAS
(ns)
tRC
(ns)
MT/s
Grade
CL-tRCD-tRP
DDR3-1066
DDR3-1333
-G7
-H9
1.875
1.5
7
9
13.125
13.5
13.125
13.5
37.5
36
50.625
49.5
7-7-7
9-9-9
Speed Grade
Frequency [MHz]
CL8
Grade
Remark
CL6
CL7
CL9
CL10
-G7
-H9
800
800
1066
1066
1066
1066
1333
1333
Address Table
1GB(1Rx8)
2GB(2Rx8)
2GB(1Rx4)
4GB(2Rx4)
4GB(4Rx8)
Refresh
Method
8K/64ms
A0-A13
A0-A9
8K/64ms
A0-A13
A0-A9
8K/64ms
A0-A13
8K/64ms
A0-A13
8K/64ms
A0-A13
A0-A9
Row Address
Column
Address
A0-A9, A11
A0-A9,A11
Bank Address
Page Size
BA0-BA2
1KB
BA0-BA2
1KB
BA0-BA2
1KB
BA0-BA2
1KB
BA0-BA2
1KB
Rev. 0.1 / Dec. 2009
4
Pin Descriptions
Num
ber
Num
ber
Pin Name
Description
Pin Name
Description
CK0
CK0
Clock Input, positive line
Clock Input, negative line
Clock Input, positive line
Clock Input, negative line
Clock Enables
1
1
1
1
2
ODT[1:0]
DQ[63:0]
CB[7:0]
On Die Termination Inputs
Data Input/Output
2
64
8
CK1
Data check bits Input/Output
Data strobes
CK1
DQS[8:0]
DQS[8:0]
9
CKE[1:0]
Data strobes, negative line
9
DM[8:0]/
DQS[17:9],
TDQS[17:9]
Data Masks / Data strobes,
Termination data strobes
RAS
Row Address Strobe
1
1
9
9
Data strobes, negative line,
Termination data strobes
DQS[17:9],
TDQS[17:9]
CAS
WE
Column Address Strobe
Reserved for optional hardware
temperature sensing
Write Enable
Chip Selects
Address Inputs
1
4
EVENT
TEST
1
1
1
Memory bus test tool (Not Con-
nected and Not Usable on DIMMs)
S[3:0]
A[9:0],A11,
A[15:13]
14
RESET
Register and SDRAM control pin
VDD
VSS
A10/AP
A12/BC
BA[2:0]
Address Input/Autoprecharge
Address Input/Burst chop
SDRAM Bank Addresses
1
1
3
Power Supply
22
59
1
Ground
VREFDQ
Reference Voltage for DQ
Serial Presence Detect (SPD)
Clock Input
VREFCA
SCL
1
Reference Voltage for CA
1
VTT
SDA
SPD Data Input/Output
SPD Address Inputs
1
3
Termination Voltage
SPD Power
4
1
VDDSPD
SA[2:0]
Parity bit for the Address and
Control bus
Par_In
1
1
Parity error found on the
Address and Control bus
Err_Out
Rev. 0.1 / Dec. 2009
5
Input/Output Functional Descriptions
Symbol
Type
Polarity
Function
Positive
Line
Positive line of the differential pair of system clock inputs that drives input to the on-
DIMM Clock Driver.
CK0
IN
Negative Negative line of the differential pair of system clock inputs that drives the input to the
CK0
CK1
CK1
IN
IN
IN
Line
on-DIMM Clock Driver.
Positive
Line
Terminated but not used on RDIMMs.
Negative
Line
Terminated but not used on RDIMMs.
CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input
buffers and output drivers of the SDRAMs. Taking CKE LOW provides PRECHARGE
POWER-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN
(row ACTIVE in any bank)
Active
High
CKE[1:0]
IN
Enables the command decoders for the associated rank of SDRAM when low and dis-
ables decoders when high. When decoders are disabled, new commands are ignored
and previous operations continue. Other combinations of these input signals perform
unique functions, including disabling all outputs (except CKE and ODT) of the register(s)
on the DIMM or accessing internal control words in the register device(s). For modules
with two registers, S[3:2] operate similarly to S[1:0] for the second set of register out-
puts or register control words.
Active
Low
S[3:0]
IN
IN
Active
High
ODT[1:0]
On-Die Termination control signals
Active
Low
When sampled at the positive rising edge of the clock, CAS, RAS, and WE define the
operation to be executed by the SDRAM.
RAS, CAS, WE
VREFDQ
IN
Supply
Supply
Reference voltage for DQ0-DQ63 and CB0-CB7.
Reference voltage for A0-A15, BA0-BA2, RAS, CAS, WE, S0, S1, CKE0, CKE1, Par_In,
ODT0 and ODT1.
VREFCA
Selects which SDRAM bank of eight is activated.
BA0 - BA2 define to which bank an Active, Read, Write or Precharge command is being
applied. Bank address also determines mode register is to be accessed during an MRS
cycle.
BA[2:0]
IN
IN
—
Provided the row address for Active commands and the column address
and Auto Precharge bit for Read/Write commands to select one location out of the mem-
ory array in the respective bank. A10 is sampled during a Precharge command to deter-
mine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If
only one bank is to be precharged, the bank is selected by BA. A12 is also utilized for BL
4/8 identification of “’BL on the fly’’ during CAS command. The address inputs also pro-
vide the op-code during Mode Register Set commands.
A[15:13,
12/BC,11,
10/AP,[9:0]
—
—
DQ[63:0],
CB[7:0]
I/O
IN
Data and Check Bit Input/Output pins
Active
High
DM[8:0]
Masks write data when high, issued concurrently with input data.
V
DD, VSS
VTT
Supply
Supply
Power and ground for the DDR SDRAM input buffers and core logic.
Termination Voltage for Address/Command/Control/Clock nets.
Rev. 0.1 / Dec. 2009
6
Symbol
Type
Polarity
Function
Positive
Edge
DQS[17:0]
I/O
Positive line of the differential data strobe for input and output data.
Negative
Edge
DQS[17:0]
I/O
Negative line of the differential data strobe for input and output data.
TDQS/TDQS is applicable for X8 DRAMs only. When enabled via Mode Register A11=1 in
MR1,DRAM will enable the same termination resistance function on TDQS/TDQS that is
applied to DQS/DQS. When disabled via mode register A11=0 in MR1, DM/TDQS will
provide the data mask function and TDQS is not used. X4/X16 DRAMs must disable the
TDQS function via mode register A11=0 in MR1
TDQS[17:9]
TDQS[17:9]
OUT
These signals are tied at the system planar to either VSS or VDDSPD to configure the
serial SPD EEPROM address range.
SA[2:0]
SDA
IN
I/O
IN
—
—
—
This bidirectional pin is used to transfer data into or out of the SPD EEPROM. A resistor
must be connected from the SDA bus line to VDDSPD on the system planar to act as a
pullup.
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be con-
nected from the SCL bus time to VDDSPD on the system planar to act as a pullup.
SCL
This signal indicates that a thermal event has been detected in the thermal sensing
device.The system should guarantee the electrical level requirement is met for the
EVENT pin on TS/SPD part.
OUT
(open
drain)
EVENT
VDDSPD
Active Low
No pull-up resister is provided on DIMM.
Serial EEPROM positive power supply wired to a separate power pin at the connector
which supports from 3.0 Volt to 3.6 Volt (nominal 3.3V) operation.
Supply
The RESET pin is connected to the RESET pin on the register and to the RESET pin on
the DRAM.
RESET
Par_In
IN
IN
Parity bit for the Address and Control bus. (“1 “: Odd, “0 “: Even)
OUT
(open
drain)
Parity error detected on the Address and Control bus. A resistor may be connected from
Err_Out bus line to VDD on the system planar to act as a pull up.
Err_Out
TEST
Used by memory bus analysis tools (unused (NC) on memory DIMMs)
Rev. 0.1 / Dec. 2009
7
Pin Assignments
Front Side
(left 1–60)
Back Side
(right 121–180)
Front Side
(left 61–120)
Back Side
(right 181–240)
Pin #
Pin #
Pin #
Pin #
1
2
3
4
VREFDQ
121
122
123
124
V
SS
61
62
63
64
A2
181
182
183
184
A1
VSS
DQ4
DQ5
VDD
VDD
VDD
CK0
DQ0
DQ1
NC, CK1
NC, CK1
VSS
DM0,DQS9,
TDQS9
5
6
V
SS
125
126
65
66
VDD
VDD
185
186
CK0
VDD
NC,DQS9,
TDQS9
DQS0
DQS0
7
8
127
128
129
130
131
132
133
VSS
67
68
69
70
71
72
73
VREFCA
Par_In, NC
VDD
187
188
189
190
191
192
193
EVENT, NC
A0
VSS
DQ6
DQ7
9
DQ2
DQ3
VDD
10
11
12
13
VSS
A10 / AP
BA0
BA1
VSS
DQ12
DQ13
VDD
DQ8
DQ9
VDD
RAS
VSS
WE
S0
DM1,DQS10,
TDQS10
14
15
V
SS
134
135
74
75
CAS
VDD
194
195
VDD
NC,DQS10,
TDQS10
DQS1
DQS1
ODT0
16
17
18
19
20
21
22
136
137
138
139
140
141
142
VSS
76
77
78
79
80
81
82
S1, NC
ODT1, NC
VDD
196
197
198
199
200
201
202
A13
VDD
VSS
DQ14
DQ15
DQ10
DQ11
S3, NC
VSS
S2, NC
VSS
VSS
DQ20
DQ21
VSS
DQ36
DQ37
DQ16
DQ17
DQ32
DQ33
VSS
VSS
DM2,DQS11,
TDQS11
DM4,DQS13,
TDQS13
23
24
V
SS
143
144
83
84
V
SS
203
204
NC,DQS11,
TDQS11
NC,DQS13,
TDQS13
DQS2
DQS2
DQS4
DQS4
25
26
27
28
29
30
31
145
146
147
148
149
150
151
VSS
85
86
87
88
89
90
91
205
206
207
208
209
210
211
VSS
VSS
DQ22
DQ23
VSS
DQ38
DQ39
DQ18
DQ19
DQ34
DQ35
VSS
VSS
VSS
DQ28
DQ29
VSS
DQ44
DQ45
DQ24
DQ25
DQ40
DQ41
VSS
VSS
NC = No Connect; RFU = Reserved Future Use
Rev. 0.1 / Dec. 2009
8
Front Side
(left 1–60)
Back Side
Front Side
Back Side
Pin #
32
Pin #
152
Pin #
92
Pin #
212
(right 121–180)
(left 61–120)
(right 181–240)
DM3,DQS12,
TDQS12
DM5,DQS14,
TDQS14
VSS
VSS
NC,DQS12,
TDQS12
NC,DQS14,
TDQS14
33
DQS3
DQS3
153
93
DQS5
DQS5
213
34
35
36
37
38
39
40
154
155
156
157
158
159
160
VSS
94
95
214
215
216
217
218
219
220
VSS
VSS
DQ30
DQ31
VSS
DQ46
DQ47
DQ26
DQ27
96
DQ42
DQ43
VSS
97
VSS
VSS
CB4, NC
CB5, NC
98
VSS
DQ52
DQ53
CB0, NC
CB1, NC
99
DQ48
DQ49
VSS
100
VSS
NC,DM8,DQS17,
TDQS17
DM6,DQS15,
TDQS15
41
42
V
SS
161
162
101
102
V
SS
221
222
NC,DQS17,
TDQS17
NC,DQS15,
TDQS15
DQS8
DQS8
DQS6
DQS6
43
44
45
46
47
48
163
164
165
166
167
168
VSS
103
104
105
106
107
108
109
223
224
225
226
227
228
229
VSS
VSS
CB6, NC
CB7, NC
VSS
DQ54
DQ55
CB2, NC
CB3, NC
DQ50
DQ51
VSS
VSS
VSS
NC(TEST)
RESET
VSS
DQ60
DQ61
VTT, NC
KEY
DQ56
DQ57
KEY
VSS
DM7,DQS16,
TDQS16
49
50
VTT, NC
CKE0
169
170
CKE1, NC
VDD
110
111
V
SS
230
231
NC,DQS16,
TDQS16
DQS7
DQS7
51
52
53
54
55
56
57
58
59
60
VDD
BA2
171
172
173
174
175
176
177
178
179
180
A15
A14
VDD
A12 / BC
A9
112
113
114
115
116
117
118
119
120
232
233
234
235
236
237
238
239
240
VSS
VSS
DQ62
DQ63
Err_Out, NC
VDD
DQ58
DQ59
VSS
A11
VSS
VDDSPD
SA1
A7
VDD
A8
SA0
SCL
SA2
VTT
VDD
SDA
A5
A6
VSS
A4
VDD
A3
VTT
VDD
NC = No Connect; RFU = Reserved Future Use
Rev. 0.1 / Dec. 2009
9
Registering Clock Driver Specifications
Capacitance Values
Symbol
Parameter
Conditions
Min Typ Max Unit
Input capacitance, Data inputs
1.5
2
-
-
2.5
3
pF
pF
Input capacitance, CK, CK, FBIN, FBIN
CI
Input capacitance, CK, CK, FBIN, FBIN
(DDR3-1600)
1.5
-
-
-
2.5
3
pF
pF
Input capacitance, RESET, MIRROR,
QCSEN
CIR
VI = VDD or GND; VDD = 1.5v
Input & Output Timing Requirements
DDR3-800
1066/1333
Symbol
Parameter
Conditions
Unit
Min
300
70
Max
670
300
-
fclock
fTEST
tSU
Input clock frequency
Input clock frequency
Setup time
Application frequency
Test frequency
Mhz
Mhz
ps
Input valid before CK/CK
Input to remain valid after CK/CK
100
175
tH
Hold time
-
ps
Propagation delay, single-
bit switching
tPDM
tDIS
tEN
CK/CK to output
Yn/Yn to output float
Output driving to Yn/Yn
0.65
1.0
ns
ps
ps
Output disable time (1/2-
Clock prelaunch)
0.5 tCK +
tQSK1(min)
-
-
Output enable time (1/2-
Clock prelaunch)
0.5 tCK -
tQSK1(max)
Rev. 0.1 / Dec. 2009
10
On DIMM Thermal Sensor
The DDR3 SDRAM DIMM temperature is monitored by integrated thermal sensor. The integrated thermal
sensor comply with JEDEC “TSE2002av, Serial Presence Detect with Temperature Sensor”.
Connection of Thermal Sensor
EVENT
SCL
SDA
SA0
SA1
SA2
EVENT
SCL
SPD with
Integrated
TS
SA0
SA1
SA2
SDA
Temperature-to-Digital Conversion Performance
Parameter
Temperature Sensor Accuracy (Grade B)
Resolution
Condition
Min
Typ
Max
Unit
Active Range,
75°C < TA < 95°C
-
± 0.5
± 1.0
± 1.0
°C
Monitor Range,
40°C < TA < 125°C
-
-
± 2.0
± 3.0
°C
-20°C < TA < 125°C
± 2.0
°C
°C
0.25
Rev. 0.1 / Dec. 2009
11
Functional Block Diagram
1GB, 128Mx72 Module(1Rank of x8)
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
DQS8
DQS8
DM8/DQS17
DQS17
CB[7:0]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS4
DQS4
DM4/DQS13
DQS13
DQ[39:32]
DQS
DQS
TDQS
TDQS
DQ [7:0]
D8
D3
D2
D4
D5
D6
D7
DQS5
DQS5
DM5/DQS14
DQS14
DQ[47:40]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS3
DQS3
DM3/DQS12
DQS12
DQ[31:24]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS6
DQS6
DM6/DQS15
DQS15
DQ[55:48]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS2
DQS2
DM2/DQS11
DQS11
DQ[23:16]
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS1
DQS1
DM1/DQS10
DQS10
DQ[15:8]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS7
DQS7
DM7/DQS16
DQS16
DQ[63:56]
DQS
DQS
TDQS
TDQS
DQ [7:0]
VDDSPD
SPD
D1
D0
VDD
D0–D8
VTT
VREFCA
VREFDQ
D0–D8
D0–D8
Vtt
ZQ
DQS0
DQS0
DM0/DQS9
DQS9
DQ[7:0]
DQS
DQS
TDQS
TDQS
DQ [7:0]
VSS
D0–D8
Note:
1.DQ-to-I/O wiring may be changed within byte.
2.ZQ resistors are 240Ω ± 1%.For all other resistor values refer to the
appropriate wiring diagram.
Vtt
S0
S1
BA[N:0]
RS0A
RS0B
RBA[N:0]A
RBA[N:0]A
RA[N:0]A
RA[N:0]A
→
→
CS0: SDRAMs D[3:0], D8
CS0: SDRAMs D[7:4]
1:
2
R
E
G
I
S
T
E
R
/
→
→
BA[N:0]: SDRAMs D[3:0], D8
BA[N:0]: SDRAMs D[7:4]
A[N:0]
RAS
→
→
A[N:0]: SDRAMs D[3:0], D8
A[N:0]: SDRAMs D[7:4]
RRASA
RRASA
→
→
RAS: SDRAMs D[3:0], D8
RAS: SDRAMs D[7:4]
VDDSPD
EVENT
SCL
VDDSPD
SA0
SA0
SA1
SA2
VSS
CAS
RCASA
RCASA
RWEA
RWEA
RCKE0A
RCKE0B
RODT0A
RODT0B
PCK0A
PCK0B
PCK0A
PCK0B
→
→
CAS: SDRAMs D[3:0], D8
CAS: SDRAMs D[7:4]
EVENT SPD with SA1
Integrated
WE
SCL
SA2
VSS
→
→
WE: SDRAMs D[3:0], D8
WE: SDRAMs D[7:4]
TS
CKE0
SDA
→
CKE0: SDRAMs D[3:0], D8
CKE0: SDRAMs D[7:4]
SDA
→
ODT0
CK0
→
→
ODT0: SDRAMs D[3:0], D8
ODT0: SDRAMs D[7:4]
Plan to use SPD with Integrated TS of Class B and
might be changed on customer’s requests. For more
details of SPD and Thermal sensor, please contact
local Hynix sales representative
P
L
L
→
→
CK: SDRAMs D[3:0], D8
CK: SDRAMs D[7:4]
120
Ω
±
1%
CK0
CK0
→
→
CK: SDRAMs D[3:0], D8
CK: SDRAMs D[7:4]
120
Ω
1%
±
CK0
OERR
RST
PAR_IN
Err_Out
RST: SDRAMs D[8:0]
RESET
S[3:2], CKE1, ODT1, are NC (Unused register inputs ODT1 and CKE1 have a 330
Ω resistor to ground
Rev. 0.1 / Dec. 2009
12
2GB, 256Mx72 Module(2Rank of x8) - page1
DQS8
DQS8
DM8/DQS17
DQS17
CB[7:0]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS4
DQS4
DM4/DQS13
DQS13
DQ[39:32]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS
DQS
TDQS
TDQS
DQ [7:0]
D8
D3
D2
D1
D0
D4
D5
D6
D7
D17
D12
D11
D10
D9
D13
D14
D15
D16
ZQ
ZQ
ZQ
ZQ
DQS3
DQS3
DM3/DQS12
DQS12
DQ[31:24]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS5
DQS5
DM5/DQS14
DQS14
DQ[47:40]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
ZQ
ZQ
ZQ
DQS2
DQS2
DM2/DQS11
DQS11
DQ[23:16]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS6
DQS6
DM6/DQS15
DQS15
DQ55:48]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
ZQ
ZQ
ZQ
DQS1
DQS1
DM1/DQS10
DQS10
DQ[15:8]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS7
DQS7
DM7/DQS16
DQS16
DQ[63:56]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
ZQ
ZQ
ZQ
Vtt
DQS0
DQS0
DM0/DQS9
DQS9
DQ[7:0]
DQS
DQS
TDQS
TDQS
DQ [7:0]
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
ZQ
VDDSPD
EVENT
SCL
VDDSPD
SA0
SA0
SA1
SA2
VSS
EVENT SPD with SA1
Vtt
Integrated
SCL
SA2
VSS
TS
SDA
SDA
Plan to use SPD with Integrated TS of Class B and
might be changed on customer’s requests. For more
details of SPD and Thermal sensor, please contact
local Hynix sales representative
Note:
1. DQ-to-I/O wiring may be changed within a byte.
2. Unless otherwise noted, resistor values are 15Ω ± 5%.
3. ZQ resistors are 240Ω ± 1%. For all other resistor values
refer to the appropriate wiring diagram.
VDDSPD
Serial PD
V
DD
4. See the wiring diagrams for all resistors associated with the
command, address and control bus.
D0–D17
D0–D17
D0–D17
D0–D17
VTT
VREFCA
VREFDQ
VSS
D0–D17
Rev. 0.1 / Dec. 2009
13
2GB, 256Mx72 Module(2Rank of x8) - page2
S0
RS0A
RS0B
RS1A
RS1B
→
→
CS0: SDRAMs D[3:0], D8
CS0: SDRAMs D[7:4]
1:2
S1
→
→
CS1: SDRAMs D[12:9], D17
CS1: SDRAMs D[16:13]
R
E
G
I
S
T
E
R
/
S[3:2] NC
BA[N:0]
RBA[N:0]A
→
BA[N:0]: SDRAMs D[3:0], D[12:8], D17
BA[N:0]: SDRAMs D[7:4], D[16:13]
RBA[N:0]B
→
A[N:0]
RAS
RA[N:0]A
RA[N:0]B
→
A[N:0]: SDRAMs D[3:0], D[12:8], D17
→
A[N:0]: SDRAMs D[7:4], D[16:13]
RRASA
RRASB
→
→
RAS: SDRAMs D[3:0], D[12:8], D17
RAS: SDRAMs D[7:4], D[16:13]
CAS
RCASA
RCASB
RWEA
RWEB
RCKE0A
RCKE0B
RCKE1A
RCKE1B
→
→
CAS: SDRAMs D[3:0], D[12:8], D17
CAS: SDRAMs D[7:4], D[16:13]
WE
→
→
→
→
WE: SDRAMs D[3:0], D[12:8], D17
WE: SDRAMs D[7:4], D[16:13]
CKE0: SDRAMs D[3:0], D8
CKE0: SDRAMs D[7:4]
CKE1: SDRAMs D[12:9], D17
CKE1: SDRAMs D[16:13]
CKE0
CKE1
P
L
L
→
→
ODT0
RODT0A
RODT0B
→
→
ODT0: SDRAMs D[3:0], D8
ODT0: SDRAMs D[7:4]
ODT1
CK0
RODT1A
RODT1A
→
→
ODT1: SDRAMs D[12:9], D17
ODT1: SDRAMs D[16:13]
PCK0A
PCK0B
PCK1A
PCK1B
PCK0A
PCK0B
PCK1A
PCK1B
→
CK: SDRAMs D[3:0], D8
CK: SDRAMs D[7:4]
→
→
→
→
→
→
→
120
± 5%
Ω
CK: SDRAMs D[12:9], D17
CK: SDRAMs D[16:13]
CK: SDRAMs D[3:0], D8
CK: SDRAMs D[7:4]
CK: SDRAMs D[12:9], D17
CK: SDRAMs D[16:13
CK0
]
CK1
CK1
120
Ω
± 5%
PAR_IN
OERR
Err_Out
RESET
RST
RST: SDRAMs D[17:0]
* S[3:2], CK1 and CK1 are NC
Rev. 0.1 / Dec. 2009
14
2GB, 256Mx72 Module(1Rank of x4) - page1
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS8
DQS8
VSS
DQS17
DQS17
VSS
CB[7:4]
DQS4
DQS4
VSS
DQS13
DQS13
VSS
DQ[39:36]
CB[3:0]
D8
D3
D2
D1
D0
D17
D12
D11
D10
D9
DQ[35:32]
D4
D5
D6
D7
D13
D14
D15
D16
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS3
DQS3
VSS
DQS12
DQS12
VSS
DQS5
DQS5
VSS
DQS14
DQS14
VSS
DQ[27:24]
DQ[31:28]
DQ[43:40]
DQ[47:44]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS2
DQS2
VSS
DQS11
DQS11
VSS
DQS6
DQS6
VSS
DQS15
DQS15
VSS
DQ[19:16]
DQ23:20]
DQ[51:48]
DQ[55;52]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS1
DQS1
VSS
DQS10
DQS10
VSS
DQ[15:12]
DQS7
DQS7
VSS
DQS16
DQS16
VSS
DQ[63:60]
DQ[11;8]
DQ[59:56]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS0
DQS0
VSS
DQS9
DQS9
VSS
Vtt
DQ[3:0]
DQ[7:4]
Vtt
VDDSPD
EVENT
SCL
VDDSPD
SA0
SA0
Plan to use SPD with Integrated TS of Class B and
might be changed on customer’s requests. For more
details of SPD and Thermal sensor, please contact
local Hynix sales representative
EVENT SPD with SA1
SA1
SA2
VSS
Integrated
SCL
SA2
VSS
TS
SDA
SDA
VDDSPD
SPD
Note:
VDD
D0–D17
D0–D17
D0–D17
D0–D17
1. DQ-to-I/O wiring may be changed within a nibble.
2. Unless otherwise noted, resistor values are 15%.
3. See the wiring diagrams for all resistors associated with the com-
Ω
±5
VTT
VREFCA
VREFDQ
mand, address and conΩtrol bus.
4. ZQ resistors are 240%. F±o1r all other resistor values refer to the appro-
priate wiring diagram.
VSS
D0–D17
Rev. 0.1 / Dec. 2009
15
2GB, 256Mx72 Module(1Rank of x4) - page2
S0
RS0A
RS0B
RS1A
RS1B
→
→
CS0: SDRAMs D[3:0], D[12:8], D17
CS0: SDRAMs D[7:4], D[16:13]
CS1: SDRAMs D[12:9], D17
S1
→
→
RBA[N:0]A
1:2
CS1: SDRAMs D[16:13]
BA[N:0]
A[N:0]
RAS
R
E
G
I
S
T
E
R
/
→
BA[N:0]: SDRAMs D[3:0], D[12:8], D17
BA[N:0]: SDRAMs D[7:4], D[16:13]
RBA[N:0]B
RA[N:0]A
RA[N:0]B
→
→
A[N:0]: SDRAMs D[3:0], D[12:8], D17
→
A[N:0]: SDRAMs D[7:4], D[16:13]
RRASA
RRASB
→
→
RAS: SDRAMs D[3:0], D[12:8], D17
RAS: SDRAMs D[7:4], D[16:13]
CAS
RCASA
RCASB
RWEA
RWEB
RCKE0A
RCKE0B
→
→
CAS: SDRAMs D[3:0], D[12:8], D17
CAS: SDRAMs D[7:4], D[16:13]
WE
→
→
→
→
WE: SDRAMs D[3:0], D[12:8], D17
WE: SDRAMs D[7:4], D[16:13]
CKE0: SDRAMs D[3:0], D[12:8], D17
CKE0: SDRAMs D[7:4], D[16:13]
CKE0
ODT0
P
L
RODT0A
RODT0B
→
→
ODT0: SDRAMs D[3:0], D[12:8]. D17
ODT0: SDRAMs D[7:4], D[16:13]
L
CK0
CK0
PCK0A
PCK0B
→
→
CK: SDRAMs D[3:0], D8
CK: SDRAMs D[7:4]
PCK0A
PCK0B
→
→
CK: SDRAMs D[3:0], D8
CK: SDRAMs D[7:4]
PAR_IN
OERR
Err_Out
RESET
RST
RST: SDRAMs D[17:0]
* S[3:2], CKE1, ODT1, CK1 and CK1 are NC (Unused register inputs ODT1 and CKE1 have a 330
resistor to ground.)
Ω
Rev. 0.1 / Dec. 2009
16
4GB, 512Mx72 Module(2Rank of x4) - page1
DQS
DQS
DQS
DQS
DQS17
DQS8
DQS17
VSS
DQS
DM
DQS
DM
DQS8
VSS
DQS
DM
DQS
DM
CB[7:4]
DQ [3:0]
D17
D12
D11
D10
D0
DQ [3:0]
D35
D30
D29
D28
D18
CB[3:0]
DQ [3:0]
D8
D3
D2
D1
D9
DQ [3:0]
D26
D21
D20
D19
D27
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS12
DQS12
VSS
DQS3
DQS3
VSS
DQ[31:28]
DQ[27:24]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS11
DQS11
VSS
DQS2
DQS2
VSS
DQ[23:20]
DQ[19:16]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS10
DQS10
VSS
DQS1
DQS1
VSS
DQ[15:12]
DQ[11:8]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS0
DQS0
VSS
DQS9
DQS9
VSS
DQ[3:0]
DQ[7:4]
Vtt
Vtt
Rev. 0.1 / Dec. 2009
17
4GB, 512Mx72 Module(2Rank of x4) - page2
DQS
DQS
DM
DQS
DQS
DM
DQS
DQS
DM
DQS
DQS
DM
DQS14
DQS14
VSS
DQS13
DQS13
VSS
DQ[47:44]
DQ [3:0]
D14
DQ [3:0]
D32
D22
D34
D25
DQ[39:36]
DQ [3:0]
D13
DQ [3:0]
D31
D23
D33
D24
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS4
DQS4
VSS
DQS5
DQS5
VSS
DQ[35:32]
D4
DQ[43:40]
D5
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS16
DQS16
VSS
DQS15
DQS15
VSS
D16
D15
DQ[63:60]
DQ[55:52]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS
DQS
DM
DQ [3:0]
DQS7
DQS7
VSS
DQS6
DQS6
VSS
DQ[59:56]
D7
DQ[51:48]
D6
Vtt
Vtt
V
SPD
DDSPD
VDDSPD
EVENT
SCL
VDDSPD
SA0
SA0
SA1
SA2
VSS
V
DD
D0–D35
D0–D35
D0–D35
D0–D35
EVENT SPD with SA1
V
TT
Integrated
SCL
SA2
VSS
VREFCA
VREFDQ
TS
SDA
SDA
V
SS
D0–D35
Plan to use SPD with Integrated TS of Class B and
might be changed on customer’s requests. For more
details of SPD and Thermal sensor, please contact
local Hynix sales representative
Note:
1. DQ-to-I/O wiring may be changed within a nibble.
2. See wiring diagrams for all resistors values.
3. ZQ pins of each SDRAM are connected to individual RZQ resistors (240+/-1%) ohms.
Rev. 0.1 / Dec. 2009
18
4GB, 512Mx72 Module(2Rank of x4) - page3
S0
S1
RS0A
RS0B
RS1A
RS1B
→
→
CS0: SDRAMs D[3:0], D[12:8], D17
CS0: SDRAMs D[7:4], D[16:13]
1:2
→
→
CS1: SDRAMs D[21:18], D[30:26], D35
CS1: SDRAMs D[25:22], D[34:31]
R
E
G
I
S
T
E
R
/
BA[N:0]
A[N:0]
RBA[N:0]A
→
BA[N:0]: SDRAMs D[3:0], D[12:8], D[21:17], D[30:26], D35
BA[N:0]: SDRAMs D[7:4], D[16:13], D[25:22], D[34:31]
RBA[N:0]B
→
RA[N:0]A
RA[N:0]B
→
A[N:0]: SDRAMs D[3:0], D[12:8], D[21:17], D[30:26], D35
→
A[N:0]: SDRAMs D[7:4], D[16:13], D[25:22], D[34:31]
RAS
CAS
RRASA
RRASB
→
→
RAS: SDRAMs D[3:0], D[12:8], D[21:17], D[30:26], D35
RAS: SDRAMs D[7:4], D[16:13], D[25:22], D[34:31]
RCASA
RCASB
RWEA
RWEB
RCKE0A
RCKE0B
RCKE1A
RCKE1B
→
→
CAS: SDRAMs D[3:0], D[12:8], D[21:17], D[30:26], D35
CAS: SDRAMs D[7:4], D[16:13], D[25:22], D[34:31]
WE
→
→
→
→
WE: SDRAMs D[3:0], D[12:8], D[21:17], D[30:26], D35
WE: SDRAMs D[7:4], D[16:13], D[25:22], D[34:31]
CKE0: SDRAMs D[3:0], D[12:8], D17
CKE0: SDRAMs D[7:4], D[16:13]
CKE1: SDRAMs D[21:18], D[30:26], D35
CKE1: SDRAMs D[25:22], D[34:31]
CKE0
CKE1
P
L
L
→
→
ODT0
RODT0A
RODT0B
→
→
ODT0: SDRAMs D[3:0], D[12:8], D17
ODT0: SDRAMs D[7:4], D[16:13]
ODT1
CK0
RODT1A
RODT1A
→
→
ODT1: SDRAMs D[21:18], D[30:26], D35
ODT1: SDRAMs D[25:22], D[34:31]
PCK0A
PCK0B
PCK1A
PCK1B
PCK0A
PCK0B
PCK1A
PCK1B
→
CK: SDRAMs D[3:0], D[12:8], D17
CK: SDRAMs D[7:4], D[16:13]
→
→
→
→
→
→
→
CK: SDRAMs D[21:18], D[30:26], D35
CK: SDRAMs D[25:22], D[34:31]
CK: SDRAMs D[3:0], D[12:8], D17
CK: SDRAMs D[7:4], D[16:13]
CK: SDRAMs D[21:18], D[30:26], D35
CK: SDRAMs D[25:22], D[34:31]
CK0
CK1
120
Ω
± 5%
CK1
PAR_IN
Err_Out
RESET
RST
RST: SDRAMs D[35:0]
* S[3:2], CK1 and CK1 are NC
Rev. 0.1 / Dec. 2009
19
4GB, 512Mx72 Module(4Rank of x8) - page1
DQS
DQS
DQS
DQS
DQS
DQS
DQS
DQS
DQS0
DQS0
DM0/TDQS9
TDQS9
DQ[7:0]
TDQS
TDQS
DQ [7:0]
ZQ
TDQS
TDQS
DQ [7:0]
ZQ
TDQS
TDQS
DQ [7:0]
ZQ
TDQS
TDQS
DQ [7:0]
ZQ
U2
U3
U4
U5
U6
U11
U12
U13
U14
U15
U20
U21
U22
U23
U24
U29
U30
U31
U32
U33
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS1
DQS1
DM1/TDQS10
TDQS10
DQ[15:8]
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS2
DQS2
DM2/TDQS11
TDQS11
DQ[32:16]
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS3
DQS3
DM3/TDQS12
TDQS12
DQ[31:24]
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS8
DQS8
DM8/TDQS17
TDQS17
CB[7:0]
Vtt
Rev. 0.1 / Dec. 2009
20
4GB, 512Mx72 Module(4Rank of x8) - page2
DQS
DQS
DQS
DQS
DQS
DQS
DQS
DQS
DQS4
DQS4
DM4/TDQS13
TDQS13
DQ[39:32]
TDQS
TDQS
DQ [7:0]
ZQ
TDQS
TDQS
DQ [7:0]
ZQ
TDQS
TDQS
DQ [7:0]
ZQ
TDQS
TDQS
DQ [7:0]
ZQ
U7
U16
U17
U18
U19
U25
U26
U27
U28
U34
U35
U36
U37
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS5
DQS5
DM5/TDQS14
TDQS14
DQ[47:40]
U8
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS6
DQS6
DM6/TDQS15
TDQS15
DQ[55:48]
U9
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ [7:0]
ZQ
DQS3
DQS3
DM3/TDQS12
TDQS12
DQ[31:24]
U10
Vtt
Plan to use SPD with Integrated TS of Class B and
might be changed on customer’s requests. For more
details of SPD and Thermal sensor, please contact
local Hynix sales representative
VDDSPD
VDDSPD
SA0
SA0
EVENT SPD with SA1
SA1
SA2
VSS
EVENT
SCL
Integrated
SCL
SA2
VSS
TS
SDA
SDA
VDDSPD
Serial PD
U1–U37
VDD
Notes:
VTT
1. DQ-to-I/O wiring may be changed within a byte.
2. See wiring diagrams for resistor values.
U1-U37
U1-U37
V
REFCA
3. ZQ pins of each SDRAM are connected to individual RZQ resistors (240+/-1%) ohms.
VREFDQ
VSS
U1-U37
Rev. 0.1 / Dec. 2009
21
4GB, 512Mx72 Module(4Rank of x8) - page3
S0
S1
S2
S3
CS0
CS1
CS2
CS3
WBA[N:0]
EBA[N:0]
WA[N:0]
→
→
→
→
CS0: SDRAMs U[10:2]
CS1: SDRAMs U[19:11]
CS2: SDRAMs U[28:20]
CS3: SDRAMs U[37:29]
1:2
R
E
G
I
S
T
E
R
/
BA[N:0]
→ BA[N:0]: SDRAMs U[6:2], U[15:11], U[24:20], U[33:29]
→
BA[N:0]: SDRAMs U[10:7], U[19:16], U[28:25], U[37:34]
A[N:0]
RAS
→ A[N:0]: SDRAMs U[6:2], U[15:11], U[24:20], U[33:29]
EA[N:0]
→
A[N:0]: SDRAMs U[10:7], U[19:16], U[28:25], U[37:34]
RAS: SDRAMs U[6:2], U[15:11], U[24:20], U[33:29]
RAS: SDRAMs U[10:7], U[19:16], U[28:25], U[37:34]
WRAS
ERAS
WCAS
ECAS
WWE
EWE
WCKE0 →
ECKE0
WCKE1
ECKE1
WODT0
EODT0
WODT0
EODT0
PCK0
PCK1
PCK2
PCK3
PCK0
PCK1
PCK2
PCK3
→
→
→
→
→
→
CAS
CAS: SDRAMs U[6:2], U[15:11], U[24:20], U[33:29]
CAS: SDRAMs U[10:7], U[19:16], U[28:25], U[37:34]
WE: SDRAMs U[6:2], U[15:11], U[24:20], U[33:29]
WE: SDRAMs U[10:7], U[19:16], U[28:25], U[37:34]
CKE0: SDRAMs U[6:2], U[24:20]
→ CKE0: SDRAMs U[10:7], U[28:25]
WE
CKE0
CKE1
ODT0
ODT1
CK0
P
L
L
→
CKE1: SDRAMs U[15:11], U[33:29]
→ CKE1: SDRAMs U[19:16], U[37:34]
→
ODT0: SDRAMs U[6:2]
→
ODT0: SDRAMs U[10:7]
→
ODT1: SDRAMs U[24:20]
→
ODT1: SDRAMs U[28:25]
→
→
→
→
→
→
→
→
CK: SDRAMs U[6:2], U[15:11]
CK: SDRAMs U[10:7], U[28:25]
CK: SDRAMs U[24:20], U[33:29]
CK: SDRAMs U[19:16], U[37:34]
CK: SDRAMs U[6:2], U[15:11]
CK: SDRAMs U[10:7], U[28:25]
CK: SDRAMs U[24:20], U[33:29]
CK: SDRAMs U[19:16], U[37:34]
CK0
CK1
120
Ω
± 5%
CK1
PAR_IN
Err_Out
RESET
RST
RST: SDRAMs U[37:2]
Rev. 0.1 / Dec. 2009
22
Absolute Maximum Ratings
Absolute Maximum DC Ratings
Absolute Maximum DC Ratings
Symbol
Parameter
Voltage on VDD pin relative to Vss
Voltage on VDDQ pin relative to Vss
Voltage on any pin relative to Vss
Storage Temperature
Rating
Units
Notes
VDD
- 0.4 V ~ 1.975 V
V
1,
VDDQ
VIN, VOUT
TSTG
- 0.4 V ~ 1.975 V
- 0.4 V ~ 1.975 V
-55 to +100
V
1,
1
V
oC
1, 2
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than
0.6XVDDQ,When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
DRAM Component Operating Temperature Range
Temperature Range
Symbol
Parameter
Normal Operating Temperature Range
Extended Temperature Range
Rating
Units
oC
Notes
0 to 85
1,2
TOPER
85 to 95
oC
1,3
Notes:
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For mea-
surement conditions, please refer to the JEDEC document JESD51-2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. Dur-
ing operation, the DRAM case temperature must be maintained between 0 - 85oC under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between 85oC and 95oC
case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:
a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs. It
is also possible to specify a component with 1X refresh (tREFI to 7.8µs) in the Extended Temperature Range.
Please refer to the DIMM SPD for option availability
b. Hynix DDR3L SDRAMs support Auto Self-Refresh and Extended Temperature Range and please refer to Hynix
component datasheet and/or the DIMM SPD for tREFI requirement in the Extended Temperature Range.
Rev. 0.1 / Dec. 2009
23
AC & DC Operating Conditions
Recommended DC Operating Conditions
Recommended DC Operating Conditions - DDR3L (1.35V) operation
Rating
Symbol
Parameter
Units
Notes
Min.
Typ.
Max.
VDD
1.283
1.35
1.45
V
V
1,2,3,4
1,2,3,4
Supply Voltage
Supply Voltage for Output
VDDQ
1.283
1.35
1.45
Notes:
1. Maximum DC value may not be greater than 1.425V. The DC value is the linear average of VDD/VDDQ (t) over a
very long period of time (e.g., 1 sec).
2. If maximum limit is exceeded, input levels shall be governed by DDR3L specifications.
3. Under these supply voltages, the device operates to this DDR3L specification.
4. Once initialized for DDR3L operation, DDR3 operation may only be used if the device is in reset while VDD and
VDDQ are changed for DDR3 operation (see Figure 0).
Recommended DC Operating Conditions - - DDR3 (1.5V) operation
Rating
Symbol
Parameter
Units
Notes
Min.
Typ.
Max.
VDD
1.425
1.5
1.575
V
V
1,2,3
1,2,3
Supply Voltage
Supply Voltage for Output
VDDQ
1.425
1.5
1.575
Notes:
1. If minimum limit is exceeded, input levels shall be governed by DDR3L specifications.
2. Under 1.5V operation, this DDR3L device operates to the DDR3 specifications under the same speed timings as
defined for this device.
3. Once initialized for DDR3 operation, DDR3L operation may only be used if the device is in reset while VDD and
VDDQ are changed for DDR3L operation (see Figure 0).
Rev. 0.1 / Dec. 2009
24
Ta
Tb
Tc
Td
Te
Tf
Tg
Th
Ti
Tj
Tk
CK,CK#
tCKSRX
Tmin = 10ns
VDD, VDDQ (DDR3)
VDD, VDDQ (DDR3L)
Tmin = 10ns
Tmin = 200us
T = 500us
RESET#
Tmin = 10ns
CKE
VALID
VALID
tDLLK
tIS
tXPR
tMRD
tMRD
tMRD
tMOD
tZQinit
1)
COMMAND
BA
READ
READ
1)
MRS
MR2
MRS
MR3
MRS
MR1
MRS
MR0
ZQCL
VALID
tIS
tIS
ODT
RTT
READ
Static LOW in case RTT_Nom is enabled at time Tg, otherwise static HIGH or LOW
VALID
NOTE 1: From time point “Td” until “Tk” NOP or DES commands must be applied
between MRS and ZQCL commands.
DON’T CARE
TIME BREAK
Figure 0 - VDD/VDDQ Voltage Switch Between DDR3L and DDR3
Rev. 0.1 / Dec. 2009
25
AC & DC Input Measurement Levels
AC and DC Logic Input Levels for Single-Ended Signals
AC and DC Input Levels for Signal-Ended Command and Address Signals
Single Ended AC and DC Input Levels for Command and Address
DDR3L-800/1066/1333
Symbol
Parameter
Unit Notes
Min
Max
VIH.CA(DC90)
VIL.CA(DC90)
VIH.CA(AC160)
VIL.CA(AC160)
VIH.CA(AC135)
VIL.CA(AC135)
DC input logic high
DC input logic low
Vref + 0.09
VSS
VDD
V
V
V
V
V
V
V
1
Vref - 0.09
Note2
1
AC input logic high
Vref + 0.160
Note2
1, 2
1, 2
1, 2
1, 2
3, 4
AC input logic low
Vref - 0.160
Note2
AC Input logic high
Vref + 0.135
Note2
AC input logic low
Vref - 0.135
0.51 * VDD
VRefCA(DC
Notes:
1. For input only pins except RESET, Vref = VrefCA (DC).
2. Refer to “Overshoot and Undershoot Specifications” on page 39.
)
Reference Voltage for ADD, CMD inputs
0.49 * VDD
3. The ac peak noise on V may not allow V to deviate from V by more than +/-1% VDD (for
RefCA(DC)
Ref
Ref
reference: approx. +/- 13.5 mV).
4. For reference: approx. VDD/2 +/- 13.5 mV
5. There levels apply for 1.35 volt (see table above) operation only. If the device is operated at 1.5V (table
“Single Ended AC and DC Input Levels for DQ and DM” on page 27), the respective levels in JESD79-3
(VIH/L.CA(DC100), VIH/L.CA(AC175), VIH/L.CA(AC150), etc.) apply. The 1.5V levels (VIH/L.CA(DC100),
VIH/L.CA(AC175), VIH/L.CA(AC150), etc.) do not apply when the device is operated in the 1.35 voltage
range.
Rev. 0.1 / Dec. 2009
26
AC and DC Input Levels for Signal-Ended Signals
DDR3 SDRAM will support two Vih/Vil AC levels for DDR3-800 and DDR3-1066 as specified in table below.
DDR3 SDRAM will also support corresponding tDS values (Table 41 on page 120 and Table 47on page 145
in “DDR3L Device Operation”) as well as derating tables Table 44 on page 139 in “DDR3L Device Opera-
tion” depending on Vih/Vil AC levels.
Single Ended AC and DC Input Levels for DQ and DM
DDR3L-800/1066
DDR3L-1333
Symbol
Parameter
Unit Notes
Min
Max
Min
Max
VIH.CA(DC90)
VIL.CA(DC90)
VIH.CA(AC160)
VIL.CA(AC160)
VIH.CA(AC135)
VIL.CA(AC135)
DC input logic high
DC input logic low
AC input logic high
AC input logic low
AC Input logic high
AC input logic low
Vref + 0.09
VSS
VDD
Vref - 0.09
Note2
Vref + 0.09
VDD
V
V
V
V
V
V
1
VSS
Vref - 0.09
1
Vref + 0.160
Note2
-
-
-
-
1, 2,5
1, 2,5
1, 2,5
1, 2,5
Vref - 0.160
Note2
Vref + 0.135
Note2
Vref + 0.135
Note2
Note2
Vref - 0.135
Vref - 0.135
Reference Voltage for DQ,
DM inputs
VRefDQ(DC
)
0.49 * VDD
0.51 * VDD
0.49 * VDD
0.51 * VDD
V
3, 4
Notes:
1. For input only pins except RESET, Vref = VrefCA (DC).
2. Refer to “Overshoot and Undershoot Specifications” on page 39.
3. The ac peak noise on V may not allow V to deviate from V by more than +/-1% VDD (for
RefDQ(DC)
Ref
Ref
reference: approx. +/- 13.5 mV).
4. For reference: approx. VDD/2 +/- 13.5 mV
5. There levels apply for 1.35 volt (table above) operation only. If the device is operated at 1.5V (See table
above), the respective levels in JESD79-3 (VIH/L.CA(DC100), VIH/L.CA(AC175), VIH/L.CA(AC150), etc.)
apply. The 1.5V levels (VIH/L.CA(DC100), VIH/L.CA(AC175), VIH/L.CA(AC150), etc.) do not apply when
the device is operated in the 1.35 voltage range.
Rev. 0.1 / Dec. 2009
27
Vref Tolerances
The dc-tolerance limits and ac-noise limits for the reference voltages
and V
are illustrated in
RefDQ
VRefCA
figure below. It shows a valid reference voltage V (t) as a function of time. (V stands for V and
RefCA
Ref
Ref
V
likewise).
RefDQ
V
(DC) is the linear average of V (t) over a very long period of time (e.g. 1 sec). This average has to
Ref
Ref
meet the min/max requirements in the table “Differential Input Slew Rate Definition” on page 34. Further-
more V (t) may temporarily deviate from V
by no more than +/- 1% VDD.
Ref
Ref (DC)
voltage
VDD
V
(t)
Ref
V
ac-noise
Ref
V
Ref(DC)max
V
Ref(DC)
VDD/2
V
Ref(DC)min
VSS
time
Illustration of V
tolerance and V
ac-noise limits
Ref
Ref(DC)
The voltage levels for setup and hold time measurements V
, V
, V
, and V
are depen-
IL(DC)
IH(AC)
IH(DC)
IL(AC)
dent on V
.
Ref
“V ” shall be understood as V
, as defined in figure above.
Ref
Ref(DC)
This clarifies that dc-variations of V affect the absolute voltage a signal has to reach to achieve a valid
Ref
high or low level and therefore the time to which setup and hold is measured. System timing and voltage
budgets need to account for V
deviations from the optimum position within the data-eye of the input
Ref(DC)
signals.
This also clarifies that the DRAM setup/hold specification and derating values need to include time and
voltage associated with V ac-noise. Timing and voltage effects due to ac-noise on V up to the speci-
Ref
Ref
fied limit (+/- 1% of VDD) are included in DRAM timings and their associated deratings.
Rev. 0.1 / Dec. 2009
28
AC and DC Logic Input Levels for Differential Signals
Differential signal definition
t
DVAC
VIL.DIFF.AC.MIN
VIL.DIFF.MIN
0
half cycle
V
IL.DIFF.MAX
VIL.DIFF.AC.MAX
t
DVAC
time
Definition of differential ac-swing and “time above ac-level” t
DVAC
Rev. 0.1 / Dec. 2009
29
Differential swing requirements for clock (CK - CK) and strobe (DQS-DQS)
Differential AC and DC Input Levels
DDR3L-800, 1066, 1333
Symbol
Parameter
Unit Notes
Min
Max
VIHdiff
VILdiff
Differential input high
Differential input logic low
Differential input high ac
Differential input low ac
+ 0.180
Note 3
Note 3
- 0.180
V
V
V
V
1
1
2
2
VIHdiff (ac)
VILdiff (ac)
2 x (VIH (ac) - Vref)
Note 3
Note 3
2 x (VIL (ac) - Vref)
Notes:
1. Used to define a differential signal slew-rate.
2. For CK - CK use VIH/VIL (ac) of AADD/CMD and VREFCA; for DQS - DQS, DQSL, DQSL, DQSU, DQSU use VIH/VIL
(ac) of DQs and VREFDQ; if a reduced ac-high or ac-low levels is used for a signal group, then the reduced level
applies also here.
3. These values are not defined; however, the single-ended signals Ck, CK, DQS, DQS, DQSL, DQSL, DQSU, DQSU
need to be within the respective limits (VIH (dc) max, VIL (dc) min) for single-ended signals as well as the limita-
tions for overshoot and undershoot. Refer to “Overshoot and Undershoot Specifications” on page 39.
Allowed time before ringback (tDVAC) for CK - CK and DQS - DQS
tDVAC [ps]
tDVAC [ps]
@ |VIH/Ldiff (ac)| = 350mV
@ |VIH/Ldiff (ac)| = 300mV
Slew Rate [V/ns]
min
75
57
50
38
34
29
22
13
0
max
min
175
170
167
163
162
161
159
155
150
150
max
> 4.0
4.0
-
-
-
-
-
-
-
-
-
-
-
-
-
3.0
2.0
1.8
-
-
-
-
-
-
1.6
1.4
1.2
1.0
< 1.0
0
Rev. 0.1 / Dec. 2009
30
Single-ended requirements for differential signals
Each individual component of a differential signal (CK, DQS, DQSL, DQSU, CK, DQS, DQSL, of DQSU) has
also to comply with certain requirements for single-ended signals.
CK and CK have to approximately reach VSEHmin / VSELmax (approximately equal to the ac-levels (VIH
(ac) / VIL (ac)) for ADD/CMD signals) in every half-cycle.
DQS, DQSL, DQSU, DQS, DQSL have to reach VSEHmin / VSELmax (approximately the ac-levels (VIH (ac)
/ VIL (ac)) for DQ signals) in every half-cycle preceding and following a valid transition.
Note that the applicable ac-levels for ADD/CMD and DQ’s might be different per speed-bin etc. E.g., if
VIH.CA(AC150)/VIL.CA(AC150) is used for ADD/CMD signals, then these ac-levels apply also for the single-
ended signals CK and CK.
VDD or VDDQ
VSEHmin
VSEH
VDD/2 or VDDQ/2
CK or DQS
VSELmax
VSEL
VSS or VSSQ
time
Single-ended requirements for differential signals.
Note that, while ADD/CMD and DQ signal requirements are with respect to Vref, the single-ended compo-
nents of differential signals have a requirement with respect to VDD / 2; this is nominally the same. the
transition of single-ended signals through the ac-levels is used to measure setup time. For single-ended
components of differential signals the requirement to reach VSELmax, VSEHmin has no bearing on timing,
but adds a restriction on the common mode characteristics of these signals.
Rev. 0.1 / Dec. 2009
31
Single-ended levels for CK, DQS, DQSL, DQSU, CK, DQS, DQSL or DQSU
DDR3L-800, 1066, 1333
Symbol
Parameter
Unit Notes
Min
Max
Single-ended high level for strobes
Single-ended high level for Ck, CK
Single-ended low level for strobes
Single-ended low level for CK, CK
(VDD / 2) + 0.175
(VDD /2) + 0.175
Note 3
Note 3
V
V
V
V
1,2
1,2
1,2
1,2
VSEH
VSEL
Note 3
(VDD / 2) = 0.175
(VDD / 2) = 0.175
Note 3
Notes:
1. For CK, CK use VIH/VIL (ac) of ADD/CMD; for strobes (DQS, DQS, DQSL, DQSL, DQSU, DQSU) use VIH/VIL (ac)
of DQs.
2. VIH (ac)/VIL (ac) for DQs is based on VREFDQ; VIH (ac)/VIL (ac) for ADD/CMD is based on VREFCA; if a reduced
ac-high or ac-low level is used for a signal group, then the reduced level applies also here.
3. These values are not defined; however, the single-ended signals Ck, CK, DQS, DQS, DQSL, DQSL, DQSU, DQSU
need to be within the respective limits (VIH (dc) max, VIL (dc) min) for single-ended signals as well as the limita-
tions for overshoot and undershoot. Refer to “Overshoot and Undershoot Specifications” on page 39.
Rev. 0.1 / Dec. 2009
32
Differential Input Cross Point Voltage
To guarantee tight setup and hold times as well as output skew parameters with respect to clock and
strobe, each cross point voltage of differential input signals (CK, CK and DQS, DQS) must meet the
requirements in table below. The differential input cross point voltage VIX is measured from the actual
cross point of true and complement signals to the midlevel between of VDD and VSS
VDD
CK, DQS
V
IX
VDD/2
V
IX
V
IX
CK, DQS
VSS
Vix Definition
Cross point voltage for differential input signals (CK, DQS)
DDR3L-800, 1066, 1333
Parameter
Symbol
Unit Notes
Min
Max
-150
-175
150
175
mV
Differential Input Cross Point Voltage
relative to VDD/2 for CK, CK
VIX
VIX
mV
1
Differential Input Cross Point Voltage
relative to VDD/2 for DQS, DQS
-150
150
mV
Notes:
1. Extended range for V is only allowed for clock and if single-ended clock input signals CK and CK are
IX
monotonic with a single-ended swing VSEL / VSEH of at least VDD/2 +/-250 mV, and when the differential
slew rate of CK - CK is larger than 3 V/ns.
2. Refer to the table “Single-ended levels for CK, DQS, DQSL, DQSU, CK, DQS, DQSL or DQSU” on page 32
for VSEL and VSEH standard values
Rev. 0.1 / Dec. 2009
33
Slew Rate Definitions for Single-Ended Input Signals
See 7.5 “Address / Command Setup, Hold and Derating” on page 138 in “DDR3L Device Operation” for sin-
gle-ended slew rate definitions for address and command signals.
See 7.6 “Data Setup, Hold and Slew Rate Derating” on page 145 in “DDR3L Device Operation” for single-
ended slew rate definition for data signals.
Slew Rate Definitions for Differential Input Signals
Input slew rate for differential signals (CK, CK and DQS, DQS) are defined and measured as shown in table
and figure below.
Differential Input Slew Rate Definition
Measured
Description
Defined by
Max
Min
Differential input slew rate for rising edge
(CK-CK and DQS-DQS)
VILdiffmax VIHdiffmin [VIHdiffmin-VILdiffmax] / DeltaTRdiff
VIHdiffmin VILdiffmax [VIHdiffmin-VILdiffmax] / DeltaTFdiff
Differential input slew rate for falling edge
(CK-CK and DQS-DQS)
Notes:
The differential signal (i.e. CK-CK and DQS-DQS) must be linear between these thresholds.
Delta
TRdiff
vIHdiffmin
0
vILdiffmax
Delta
TFdiff
Differential Input Slew Rate Definition for DQS, DQS# and CK, CK#
Differential Input Slew Rate Definition for DQS, DQS and CK, CK
Rev. 0.1 / Dec. 2009
34
AC & DC Output Measurement Levels
Single Ended AC and DC Output Levels
Table below shows the output levels used for measurements of single ended signals.
Single-ended AC and DC Output Levels
DDR3L-800, 1066,
Symbol
Parameter
Unit
Notes
1333
VOH(DC)
VOM(DC)
VOL(DC)
VOH(AC)
VOL(AC)
0.8 x VDDQ
V
V
V
V
V
DC output high measurement level (for IV curve linearity)
DC output mid measurement level (for IV curve linearity)
DC output low measurement level (for IV curve linearity)
AC output high measurement level (for output SR)
AC output low measurement level (for output SR)
0.5 x VDDQ
0.2 x VDDQ
VTT + 0.1 x VDDQ
1
1
V
TT - 0.1 x VDDQ
Notes:
1. The swing of ± 0.1 x V
is based on approximately 50% of the static single ended output high or low
DDQ
swing with a driver impedance of 40Ω and an effective test load of 25Ω to V = V
/ 2.
DDQ
TT
Differential AC and DC Output Levels
Table below shows the output levels used for measurements of single ended signals.
Differential AC and DC Output Levels
DDR3L-800, 1066,
Symbol
Parameter
Unit
Notes
1333
VOHdiff (AC)
VOLdiff (AC)
Notes:
1. The swing of ± 0.2 x V
+ 0.2 x VDDQ
V
V
1
1
AC differential output high measurement level (for output SR)
- 0.2 x VDDQ
AC differential output low measurement level (for output SR)
is based on approximately 50% of the static differential output high or low
DDQ
swing with a driver impedance of 40Ω and an effective test load of 25Ω to V = V
/2 at each of the
DDQ
TT
differential outputs.
Rev. 0.1 / Dec. 2009
35
Single Ended Output Slew Rate
When the Reference load for timing measurements, output slew rate for falling and rising edges is defined
and measured between V
and V
for single ended signals are shown in table and figure below.
OL(AC)
OH(AC)
Single-ended Output slew Rate Definition
Measured
Description
Defined by
From
VOL(AC)
VOH(AC)
To
VOH(AC)
VOL(AC)
[VOH(AC)-VOL(AC)] / DeltaTRse
[VOH(AC)-VOL(AC)] / DeltaTFse
Single-ended output slew rate for rising edge
Single-ended output slew rate for falling edge
Notes:
1. Output slew rate is verified by design and characterisation, and may not be subject to production test.
Delta TRse
vOH(AC)
V∏
vOl(AC)
Delta TFse
Single Ended Output Slew Rate Definition
Single Ended Output slew Rate Definition
Output Slew Rate (single-ended)
DDR3L-800
DDR3L-1066
DDR3L-1333
Units
Parameter
Symbol
Min
1.75
Max
51)
Min
Max
Min
Max
51)
51)
Single-ended Output Slew Rate
SRQse
1.75
1.75
V/ns
Description: SR; Slew Rate
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)
se: Single-ended Signals
For Ron = RZQ/7 setting
Note 1): In two cases, a maximum slew rate of 6 V/ns applies for a single DQ signal within a byte lane.
Case_1 is defined for a single DQ signal within a byte lane which is switching into a certain direction
(either from high to low or low to high) while all remaining DQ signals in the same byte lane are static(i.e
they stay at either high or low).
Case_2 is defined for a single DQ signal within a byte lane which is switching into a certain direction
(either from high to low or low to high) while all remaining DQ signals in the same byte lane are switching
into the opposite direction (i.e from low to high or high to low respectively). For the remaining DQ signal
switching into the opposite direction, the regular maximum limit of 5 V/ns applies.
Rev. 0.1 / Dec. 2009
36
Differential Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined
and measured between VOLdiff (AC) and VOHdiff (AC) for differential signals as shown in table and figure
below.
Differential Output Slew Rate Definition
Measured
Description
Defined by
From
To
VOHdiff (AC) [VOHdiff (AC)-VOLdiff (AC)] / DeltaTRdiff
VOLdiff (AC) [VOHdiff (AC)-VOLdiff (AC)] / DeltaTFdiff
VOLdiff (AC)
VOHdiff (AC)
Differential output slew rate for rising edge
Differential output slew rate for falling edge
Notes:
1. Output slew rate is verified by design and characterization, and may not be subject to production test.
Delta
TRdiff
vOHdiff(AC)
O
vOLdiff(AC)
Delta
TFdiff
Differential Output Slew Rate Definition
Differential Output slew Rate Definition
Differential Output Slew Rate
DDR3L-800
Min Max
3.5 12
DDR3L-1066
DDR3L-1333
Units
Parameter
Symbol
Min
Max
Min
Max
Differential Output Slew Rate
Description: SR; Slew Rate
SRQdiff
3.5
12
3.5
12
V/ns
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)
se: Single-ended Signals
For Ron = RZQ/7 setting
Rev. 0.1 / Dec. 2009
37
Reference Load for AC Timing and Output Slew Rate
Figure below represents the effective reference load of 25 ohms used in defining the relevant AC timing
parameters of the device as well as output slew rate measurements.
It is not intended as a precise representation of any particular system environment or a depiction of the
actual load presented by a production tester. System designers should use IBIS or other simulation tools to
correlate the timing reference load to a system environment. Manufacturers correlate to their production
test conditions, generally one or more coaxial transmission lines terminated at the tester electronics.
VDDQ
25 Ohm
CK, CK
DQ
DQS
DQS
VTT = VDDQ/2
DUT
Reference Load for AC Timing and Output Slew Rate
Rev. 0.1 / Dec. 2009
38
Overshoot and Undershoot Specifications
Address and Control Overshoot and Undershoot Specifications
AC Overshoot/Undershoot Specification for Address and Control Pins
DDR3L-
800
DDR3L-
1066
DDR3L-
1333
Parameter
Units
Maximum peak amplitude allowed for overshoot area. (See figure below)
Maximum peak amplitude allowed for undershoot area. (See figure below)
Maximum overshoot area above VDD (See figure below)
0.4
0.4
0.4
0.4
0.5
0.5
0.4
0.4
0.4
0.4
V
V
0.67
0.67
V-ns
V-ns
Maximum undershoot area below VSS (See figure below)
(A0-A15, BA0-BA3, CS, RAS, CAS, WE, CKE, ODT)
Maximum Amplitude
Overshoot Area
VDD
VSS
Volts
(V)
Undershoot Area
Maximum Amplitude
Time (ns)
Address and Control Overshoot and Undershoot Definition
Address and Control Overshoot and Undershoot Definition
Rev. 0.1 / Dec. 2009
39
Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications
AC Overshoot/Undershoot Specification for Clock, Data, Strobe and Mask
DDR3L-
800
DDR3L-
1066
DDR3L-
1333
Parameter
Units
Maximum peak amplitude allowed for overshoot area. (See figure below)
Maximum peak amplitude allowed for undershoot area. (See figure below)
Maximum overshoot area above VDD (See figure below)
Maximum undershoot area below VSS (See figure below)
(CK, CK, DQ, DQS, DQS, DM)
0.4
0.4
0.4
0.4
0.4
0.4
V
V
0.25
0.25
0.19
0.19
0.15
0.15
V-ns
V-ns
Maximum Amplitude
Overshoot Area
VDDQ
Volts
(V)
VSSQ
Undershoot Area
Maximum Amplitude
Time (ns)
Clock, Data Strobe and Mask Overshoot and Undershoot Definition
Clock, Data, Strobe and Mask Overshoot and Undershoot Definition
Rev. 0.1 / Dec. 2009
40
Refresh parameters by device density
Refresh parameters by device density
Parameter
RTT_Nom Setting
512Mb
1Gb
2Gb
4Gb
8Gb
Units
REF command ACT or
REF command time
tRFC
90
110
160
300
350
ns
0 °C ≤ T
85 °C < T
≤ 85 °C
7.8
3.9
7.8
3.9
7.8
3.9
7.8
3.9
7.8
3.9
us
us
Average periodic
refresh interval
CASE
tREFI
≤ 95 °C
CASE
Standard Speed Bins
DDR3L SDRAM Standard Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
DDR3L-800 Speed Bins
For specific Notes See “Speed Bin Table Notes” on page 44.
Speed Bin
DDR3L-800E
6-6-6
Unit
Notes
CL - nRCD - nRP
Parameter
Symbol
min
max
tAA
15
20
ns
ns
ns
ns
ns
Internal read command to first data
ACT to internal read or write delay time
PRE command period
tRCD
15
15
—
—
—
tRP
tRC
52.5
37.5
ACT to ACT or REF command period
ACT to PRE command period
tRAS
9 * tREFI
3.3
tCK(AVG)
tCK(AVG)
Reserved
ns
ns
CL = 5
CL = 6
CWL = 5
CWL = 5
1, 2, 3, 4
1, 2, 3
2.5
nCK
nCK
6
5
Supported CL Settings
Supported CWL Settings
Rev. 0.1 / Dec. 2009
41
DDR3L-1066 Speed Bins
For specific Notes See “Speed Bin Table Notes” on page 44.
Speed Bin
DDR3L-1066F
7-7-7
Unit
Note
CL - nRCD - nRP
Parameter
Symbol
min
max
Internal read command to
first data
tAA
13.125
20
ns
ns
ns
ns
ns
ACT to internal read or
write delay time
tRCD
13.125
13.125
50.625
37.5
—
—
tRP
PRE command period
ACT to ACT or REF
command period
tRC
—
ACT to PRE command
period
tRAS
9 * tREFI
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
CWL = 5
CL = 5
Reserved
Reserved
ns
ns
1, 2, 3, 4, 5
CWL = 6
4
CWL = 5
CL = 6
2.5
3.3
ns
1, 2, 3, 5
1, 2, 3, 4
4
CWL = 6
Reserved
Reserved
ns
CWL = 5
CL = 7
ns
CWL = 6
1.875
1.875
< 2.5
< 2.5
ns
1, 2, 3, 4
4
CWL = 5
CL = 8
Reserved
ns
CWL = 6
ns
1, 2, 3
nCK
nCK
Supported CL Settings
Supported CWL Settings
6, 7, 8
5, 6
Rev. 0.1 / Dec. 2009
42
DDR3L-1333 Speed Bins
For specific Notes See “Speed Bin Table Notes” on page 44.
Speed Bin
DDR3L-1333H
9-9-9
Unit
Note
CL - nRCD - nRP
Parameter
Symbol
min
13.5
max
Internal read command
to first data
tAA
tRCD
tRP
20
ns
ns
ns
ns
ns
(13.125)8
13.5
(13.125)8
ACT to internal read or
write delay time
—
—
—
13.5
(13.125)8
PRE command period
49.5
(49.125)8
ACT to ACT or REF
command period
tRC
ACT to PRE command
period
tRAS
36
9 * tREFI
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
CWL = 5
CL = 5
Reserved
Reserved
ns
ns
ns
ns
ns
ns
1,2, 3,4, 6
CWL = 6, 7
4
CWL = 5
2.5
3.3
1, 2, 3, 6
CL = 6
CL = 7
CL = 8
CWL = 6
CWL = 7
CWL = 5
Reserved
Reserved
Reserved
1, 2, 3, 4, 6
4
4
1.875
1.875
< 2.5
< 2.5
tCK(AVG)
CWL = 6
ns
1, 2, 3, 4, 6
Reserved
Reserved
Reserved
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
CWL = 7
CWL = 5
ns
ns
ns
ns
ns
ns
ns
1, 2, 3, 4
4
CWL = 6
1, 2, 3, 6
1, 2, 3, 4
4
CWL = 7
Reserved
Reserved
CWL = 5, 6
CWL = 7
CL = 9
1.5
1.5
<1.875
<1.875
1, 2, 3, 4
CWL = 5, 6
Reserved
Reserved
4
CL = 10
ns
ns
1, 2, 3
tCK(AVG)
CWL = 7
nCK
Supported CL Settings
Supported CWL Settings
6, 8, (7), 9, (10)
5, 6, 7
nCK
Rev. 0.1 / Dec. 2009
43
Speed Bin Table Notes
Absolute Specification (TOPER; VDDQ = VDD = 1.5V +/- 0.075 V);
Notes:
1, The CL setting and CWL setting result in tCK(AVG).MIN and tCK(AVG).MAX requirements. When making
a selection of tCK (AVG), both need to be fulfilled: Requirements from CL setting as well as requirements
from CWL setting.
2. tCK(AVG).MIN limits: Since CAS Latency is not purely analog - data and strobe output are synchronized
by the DLL - all possible intermediate frequencies may not be guaranteed. An application should use the
next smaller JEDEC standard tCK (AVG) value (2.5, 1.875, 1.5, or 1.25 ns) when calculating CL [nCK] =
tAA [ns] / tCK (AVG) [ns], rounding up to the next ‘Supported CL’.
3. tCK(AVG).MAX limits: Calculate tCK (AVG) = tAA.MAX / CLSELECTED and round the resulting tCK (AVG)
down to the next valid speed bin (i.e. 3.3ns or 2.5ns or 1.875 ns or 1.25 ns). This result is tCK(AVG).MAX
corresponding to CLSE LECTED.
4. ‘Reserved’ settings are not allowed. User must program a different value.
5. Any DDR3L-1066 speed bin also supports functional operation at lower frequencies as shown in the
table which are not subject to Production Tests but verified by Design/Characterization.
6. Any DDR3L-1333 speed bin also supports functional operation at lower frequencies as shown in the
table which are not subject to Production Tests but verified by Design/Characterization.
7. Any DDR3L-1600 speed bin also supports functional operation at lower frequencies as shown in the
table which are not subject to Production Tests but verified by Design/Characterization.
8. Hynix DDR3L SDRAM devices support down binning to CL=7 and CL=9, and tAA/tRCD/tRP satisfy mini-
mum value of 13.125ns.SPD settings are also programmed to match. For example, DDR3L 1333H devices
supporting down binning to DDR3L-1066F should program 13.125 ns in SPD bytes for tAAmin (Byte 16),
tRCDmin (Byte 18), and tRPmin (Byte 20). DDR3L-1600K devices supporting down binning to DDR3L-
1333H or DDR3L 1600F should program 13.125 ns in SPD bytes for tAAmin (Byte 16), tRCDmin (Byte 18),
and tRPmin (Byte 20). Once tRP (Byte 20) is programmed to 13.125ns, tRCmin (Byte 21,23) also should
be programmed accordingly. For example, 49.125ns (tRASmin + tRPmin = 36 ns + 13.125 ns) for DDR3L-
1333H and 48.125ns (tRASmin + tRPmin = 35 ns + 13.125 ns) for DDR3L-1600K.
Rev. 0.1 / Dec. 2009
44
Environmental Parameters
Symbol
Parameter
Operating temperature
Rating
Units
Notes
T
See Note
3
OPR
H
Operating humidity (relative)
10 to 90
-50 to +100
5 to 95
%
1
1
OPR
o
T
Storage temperature
C
STG
H
Storage humidity (without condensation)
Barometric Pressure (operating & storage)
%
1
STG
P
105 to 69
K Pascal
1, 2
BAR
Note:
1. Stress greater than those listed may cause permanent damage to the device. This is a stress rating only,
and device functional operation at or above the conditions indicated is not implied. Expousure to absolute
maximum rating conditions for extended periods may affect reliablility.
2. Up to 9850 ft.
3. The designer must meet the case temperature specifications for individual module components.
Rev. 0.1 / Dec. 2009
45
Pin Capacitance (VDD=1.35V, VDDQ=1.35V)
1GB: HMT112R7TFR8A
Symbol
CCK
Min
TBD
TBD
TBD
TBD
Max
TBD
TBD
TBD
TBD
Unit
pF
Pin
CK0, CK0
pF
CCTRL
CI
CKE, ODT, CS
pF
Address, RAS, CAS, WE
DQ, DM, DQS, DQS
pF
CIO
2GB: HMT125R7TFR8A
Pin
CK0, CK0
Symbol
CCK
Min
TBD
TBD
TBD
TBD
Max
TBD
TBD
TBD
TBD
Unit
pF
pF
CCTRL
CI
CKE, ODT, CS
pF
Address, RAS, CAS, WE
DQ, DM, DQS, DQS
pF
CIO
2GB: HMT125R7TFR4A
Symbol
CCK
Min
TBD
TBD
TBD
TBD
Max
TBD
TBD
TBD
TBD
Unit
pF
Pin
CK0, CK0
pF
CCTRL
CI
CKE, ODT, CS
pF
Address, RAS, CAS, WE
DQ, DM, DQS, DQS
pF
CIO
4GB: HMT151R7TFR4A
Symbol
CCK
Min
TBD
TBD
TBD
TBD
Max
TBD
TBD
TBD
TBD
Unit
pF
Pin
CK0, CK0
pF
CCTRL
CI
CKE, ODT, CS
pF
Address, RAS, CAS, WE
DQ, DM, DQS, DQS
pF
CIO
Rev. 0.1 / Dec. 2009
46
4GB: HMT151R7TFR8A
Pin
CK0, CK0
Symbol
CCK
Min
TBD
TBD
TBD
TBD
Max
TBD
TBD
TBD
TBD
Unit
pF
pF
CCTRL
CI
CKE, ODT, CS
pF
Address, RAS, CAS, WE
DQ, DM, DQS, DQS
pF
CIO
Note:
1. Pins not under test are tied to GND.
2. These value are guaranteed by design and tested on a sample basis only.
Rev. 0.1 / Dec. 2009
47
IDD and IDDQ Specification Parameters and Test Conditions
IDD and IDDQ Measurement Conditions
In this chapter, IDD and IDDQ measurement conditions such as test load and patterns are defined. Figure
1. shows the setup and test load for IDD and IDDQ measurements.
•
IDD currents (such as IDD0, IDD1, IDD2N, IDD2NT, IDD2P0, IDD2P1, IDD2Q, IDD3N, IDD3P, IDD4R,
IDD4W, IDD5B, IDD6, IDD6ET, IDD6TC and IDD7) are measured as time-averaged currents with all
VDD balls of the DDR3L SDRAM under test tied together. Any IDDQ current is not included in IDD cur-
rents.
•
IDDQ currents (such as IDDQ2NT and IDDQ4R) are measured as time-averaged currents with all
VDDQ balls of the DDR3L SDRAM under test tied together. Any IDD current is not included in IDDQ
currents.
Attention: IDDQ values cannot be directly used to calculate IO power of the DDR3L SDRAM. They can
be used to support correlation of simulated IO power to actual IO power as outlined in Figure 2. In
DRAM module application, IDDQ cannot be measured separately since VDD and VDDQ are using one
merged-power layer in Module PCB.
For IDD and IDDQ measurements, the following definitions apply:
•
•
”0” and “LOW” is defined as VIN <= V
ILAC(max).
”1” and “HIGH” is defined as VIN >= V
IHAC(max).
•
•
•
•
•
“MID_LEVEL” is defined as inputs are VREF = VDD/2.
Timing used for IDD and IDDQ Measurement-Loop Patterns are provided in Table 1.
Basic IDD and IDDQ Measurement Conditions are described in Table 2.
Detailed IDD and IDDQ Measurement-Loop Patterns are described in Table 3 through Table 10.
IDD Measurements are done after properly initializing the DDR3L SDRAM. This includes but is not lim-
ited to setting
RON = RZQ/7 (34 Ohm in MR1);
Qoff = 0 (Output Buffer enabled in MR1);
B
RTT_Nom = RZQ/6 (40 Ohm in MR1);
RTT_Wr = RZQ/2 (120 Ohm in MR2);
TDQS Feature disabled in MR1
•
•
Attention: The IDD and IDDQ Measurement-Loop Patterns need to be executed at least one time
before actual IDD or IDDQ measurement is started.
Define D = {CS, RAS, CAS, WE}:= {HIGH, LOW, LOW, LOW}
Define D = {CS, RAS, CAS, WE}:= {HIGH, HIGH, HIGH, HIGH}
Rev. 0.1 / Dec. 2009
48
IDDQ (optional)
IDD
VDD
RESET
CK/CK
VDDQ
DDR3L
SDRAM
RTT = 25 Ohm
CKE
CS
DQS, DQS
DQ, DM,
VDDQ/2
RAS, CAS, WE
TDQS, TDQS
A, BA
ODT
ZQ
VSS
VSSQ
Figure 1 - Measurement Setup and Test Load for IDD and IDDQ (optional) Measurements
[Note: DIMM level Output test load condition may be different from above
Application specific
memory channel
environment
IDDQ
Test Load
Channel
IO Power
Simulation
IDDQ
Simulation
IDDQ
Simulation
Correction
Channel IO Power
Number
Figure 2 - Correlation from simulated Channel IO Power to actual Channel IO Power supported
by IDDQ Measurement
Rev. 0.1 / Dec. 2009
49
Table 1 -Timings used for IDD and IDDQ Measurement-Loop Patterns
DDR3L-1066
DDR3L-1333
Symbol
Unit
7-7-7
1.875
7
9-9-9
1.5
9
tCK
ns
CL
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nRCD
nRC
nRAS
nRP
7
9
27
20
7
33
24
9
1KB page size
2KB page size
1KB page size
2KB page size
20
27
4
20
30
4
nFAW
nRRD
6
5
nRFC -512Mb
nRFC-1 Gb
nRFC- 2 Gb
nRFC- 4 Gb
nRFC- 8 Gb
48
59
86
160
187
60
74
107
200
234
Table 2 -Basic IDD and IDDQ Measurement Conditions
Symbol
Description
Operating One Bank Active-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, CL: see Table 1; BL: 8a); AL: 0; CS: High between ACT and
PRE; Command, Address, Bank Address Inputs: partially toggling according to Table 3; Data IO: MID-LEVEL;
DM: stable at 0; Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,... (see Table 3); Output
IDD0
Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details: see Table 3.
Operating One Bank Active-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, CL: see Table 1; BL: 8a); AL: 0; CS: High between ACT,
RD and PRE; Command, Address; Bank Address Inputs, Data IO: partially toggling according to Table 4; DM:
stable at 0; Bank Activity: Cycling with on bank active at a time: 0,0,1,1,2,2,... (see Table 4); Output Buffer and
IDD1
RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details: see Table 4.
Rev. 0.1 / Dec. 2009
50
Symbol
Description
Precharge Standby Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
Address Inputs: partially toggling according to Table 5; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all
IDD2N
banks closed; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details:
see Table 5.
Precharge Standby ODT Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
Address Inputs: partially toggling according to Table 6; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all
IDD2NT
banks closed; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: toggling according to Table 6;
Pattern Details: see Table 6.
IDDQ2NT Precharge Standby ODT IDDQ Current
Same definition like for IDD2NT, however measuring IDDQ current instead of IDD current
Precharge Power-Down Current Slow Exit
(optional)
CKE: Low; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks closed; Output
IDD2P0
Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Precharge Power Down Mode: Slow
Exitc)
Precharge Power-Down Current Fast Exit
CKE: Low; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks closed; Output
IDD2P1
Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Precharge Power Down Mode: Fast Exitc)
Precharge Quiet Standby Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks closed; Output
IDD2Q
Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0
Active Standby Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
Address Inputs: partially toggling according to Table; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all
IDD3N
banks open; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details: see
Table 5.
Rev. 0.1 / Dec. 2009
51
Symbol
IDD3P
Description
Active Power-Down Current
CKE: Low; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks open; Output Buffer
and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0
IDDQ4R Operating Burst Read IDDQ Current
Same definition like for IDD4R, however measuring IDDQ current instead of IDD current
Operating Burst Read Current
(optional)
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: High between RD; Command, Address,
Bank Address Inputs: partially toggling according to Table 7; Data IO: seamless read data burst with different
data between one burst and the next one according to Table 7; DM: stable at 0; Bank Activity: all banks open,
RD commands cycling through banks: 0,0,1,1,2,2,...(see Table 7); Output Buffer and RTT: Enabled in Mode
IDD4R
Registersb); ODT Signal: stable at 0; Pattern Details: see Table 7.
Operating Burst Write Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: High between WR; Command, Address,
Bank Address Inputs: partially toggling according to Table 8; Data IO: seamless read data burst with different
data between one burst and the next one according to Table 8; DM: stable at 0; Bank Activity: all banks open,
WR commands cycling through banks: 0,0,1,1,2,2,...(see Table 8); Output Buffer and RTT: Enabled in Mode
IDD4W
Registersb); ODT Signal: stable at HIGH; Pattern Details: see Table 8.
Burst Refresh Current
CKE: High; External clock: On; tCK, CL, nRFC: see Table 1; BL: 8a); AL: 0; CS: High between REF; Command,
Address, Bank Address Inputs: partially toggling according to Table 9; Data IO: MID_LEVEL; DM: stable at 0;
IDD5B
Bank Activity: REF command every nREF (see Table 9); Output Buffer and RTT: Enabled in Mode Registersb);
ODT Signal: stable at 0; Pattern Details: see Table 9.
Self-Refresh Current: Normal Temperature Range
TCASE: 0 - 85 oC; Auto Self-Refresh (ASR): Disabledd);Self-Refresh Temperature Range (SRT): Normale); CKE:
IDD6
Low; External clock: Off; CK and CK: LOW; CL: see Table 1; BL: 8a); AL: 0; CS, Command, Address, Bank
Address Inputs, Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: Self-Refresh operation; Output Buffer
and RTT: Enabled in Mode Registersb); ODT Signal: MID_LEVEL
Rev. 0.1 / Dec. 2009
52
Symbol
Description
Self-Refresh Current: Extended Temperature Range
TCASE: 0 - 95 oC; Auto Self-Refresh (ASR): Disabledd);Self-Refresh Temperature Range (SRT): Extendede);
IDD6ET
CKE: Low; External clock: Off; CK and CK: LOW; CL: see Table 1; BL: 8a); AL: 0; CS, Command, Address, Bank
Address Inputs, Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: Extended Temperature Self-Refresh
operation; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: MID_LEVEL
Auto Self-Refresh Current
TCASE: 0 - 95 oC; Auto Self-Refresh (ASR): Enabledd);Self-Refresh Temperature Range (SRT): Normale); CKE:
IDD6TC
Low; External clock: Off; CK and CK: LOW; CL: see Table 1; BL: 8a); AL: 0; CS, Command, Address, Bank
Address Inputs, Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: Auto Self-Refresh operation; Output
Buffer and RTT: Enabled in Mode Registersb); ODT Signal: MID_LEVEL
Operating Bank Interleave Read Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, NRRD, nFAW, CL: see Table 1; BL: 8a)f); AL: CL-1; CS:
High between ACT and RDA; Command, Address, Bank Address Inputs: partially toggling according to Table
10; Data IO: read data burst with different data between one burst and the next one according to Table 10;
DM: stable at 0; Bank Activity: two times interleaved cycling through banks (0, 1,...7) with different address-
IDD7
ing, wee Table 10; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern
Details: see Table 10.
a) Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00B
b) Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_Nom enable: set MR1 A[9,6,2]
= 011B; RTT_Wr enable: set MR2 A[10,9] = 10B
c) Precharge Power Down Mode: set MR0 A12=0B for Slow Exit or MR0 A12 = 1B for Fast Exit
d) Auto Self-Refresh (ASR): set MR2 A6 = 0B to disable or 1B to enable feature
e) Self-Refresh Temperature Range (SRT): set MR2 A7 = 0B for normal or 1B for extended temperature
range
f) Read Burst Type: Nibble Sequential, set MR0 A[3] = 0B
Rev. 0.1 / Dec. 2009
53
a)
Table 3 - IDD0 Measurement-Loop Pattern
Datab)
0
ACT
D, D
D, D
0
1
1
0
0
1
1
0
1
1
0
1
0
0
0
0
0
0
00
00
00
0
0
0
0
0
0
0
0
0
0
0
0
-
-
-
0
1,2
3,4
...
repeat pattern 1...4 until nRAS - 1, truncate if necessary
nRAS
PRE
0
0
1
0
0
0
00
0
0
0
0
-
...
repeat pattern 1...4 until nRC - 1, truncate if necessary
1*nRC+0
1*nRC+1, 2
1*nRC+3, 4
...
ACT
D, D
D, D
0
1
1
0
0
1
1
0
1
1
0
1
0
0
0
0
0
0
00
00
00
0
0
0
0
0
0
F
F
F
0
0
0
-
-
-
repeat pattern 1...4 until 1*nRC + nRAS - 1, truncate if necessary
PRE 00
1*nRC+nRAS
...
0
0
1
0
0
0
0
0
F
0
-
repeat pattern 1...4 until 2*nRC - 1, truncate if necessary
repeat Sub-Loop 0, use BA[2:0] = 1 instead
repeat Sub-Loop 0, use BA[2:0] = 2 instead
repeat Sub-Loop 0, use BA[2:0] = 3 instead
repeat Sub-Loop 0, use BA[2:0] = 4 instead
repeat Sub-Loop 0, use BA[2:0] = 5 instead
repeat Sub-Loop 0, use BA[2:0] = 6 instead
repeat Sub-Loop 0, use BA[2:0] = 7 instead
1
2
3
4
5
6
7
2*nRC
4*nRC
6*nRC
8*nRC
10*nRC
12*nRC
14*nRC
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Rev. 0.1 / Dec. 2009
54
a)
Table 4 - IDD1 Measurement-Loop Pattern
Datab)
0
ACT
D, D
D, D
0
1
1
0
0
1
1
0
1
1
0
1
0
0
0
0
0
0
00
00
00
0
0
0
0
0
0
0
0
0
0
0
0
-
-
-
0
1,2
3,4
...
repeat pattern 1...4 until nRCD - 1, truncate if necessary
RD 00
repeat pattern 1...4 until nRAS - 1, truncate if necessary
nRCD
...
0
1
0
1
0
0
0
0
0
0
0
0
00000000
-
nRAS
PRE
0
0
1
0
0
0
00
0
0
...
repeat pattern 1...4 until nRC - 1, truncate if necessary
1*nRC+0
1*nRC+1,2
1*nRC+3,4
...
ACT
D, D
D, D
0
1
1
0
0
1
1
0
1
1
0
1
0
0
0
0
0
0
00
00
00
0
0
0
0
0
0
F
F
F
0
0
0
-
-
-
repeat pattern nRC + 1,...4 until nRC + nRCE - 1, truncate if necessary
RD 00
repeat pattern nRC + 1,...4 until nRC + nRAS - 1, truncate if necessary
PRE 00
1*nRC+nRCD
...
0
1
0
1
0
0
0
0
F
0
00110011
-
1*nRC+nRAS
...
0
0
1
0
0
0
0
0
F
0
repeat pattern nRC + 1,...4 until *2 nRC - 1, truncate if necessary
repeat Sub-Loop 0, use BA[2:0] = 1 instead
repeat Sub-Loop 0, use BA[2:0] = 2 instead
repeat Sub-Loop 0, use BA[2:0] = 3 instead
repeat Sub-Loop 0, use BA[2:0] = 4 instead
repeat Sub-Loop 0, use BA[2:0] = 5 instead
repeat Sub-Loop 0, use BA[2:0] = 6 instead
repeat Sub-Loop 0, use BA[2:0] = 7 instead
1
2
3
4
5
6
7
2*nRC
4*nRC
6*nRC
8*nRC
10*nRC
12*nRC
14*nRC
a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-
LEVEL.
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are
MID_LEVEL.
Rev. 0.1 / Dec. 2009
55
a)
Table 5 - IDD2N and IDD3N Measurement-Loop Pattern
Datab)
0
D
D
D
D
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
F
F
0
0
0
0
-
-
-
-
0
1
2
3
1
2
3
4
5
6
7
4-7
repeat Sub-Loop 0, use BA[2:0] = 1 instead
repeat Sub-Loop 0, use BA[2:0] = 2 instead
repeat Sub-Loop 0, use BA[2:0] = 3 instead
repeat Sub-Loop 0, use BA[2:0] = 4 instead
repeat Sub-Loop 0, use BA[2:0] = 5 instead
repeat Sub-Loop 0, use BA[2:0] = 6 instead
repeat Sub-Loop 0, use BA[2:0] = 7 instead
8-11
12-15
16-19
20-23
24-17
28-31
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
a)
Table 6 - IDD2NT and IDDQ2NT Measurement-Loop Pattern
Datab)
0
D
D
D
D
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
-
-
-
-
0
1
0
F
F
0
0
0
2
3
1
2
3
4
5
6
7
4-7
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 1
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 2
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 3
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 4
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 5
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 6
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 7
8-11
12-15
16-19
20-23
24-17
28-31
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Rev. 0.1 / Dec. 2009
56
a)
Table 7 - IDD4R and IDDQ24RMeasurement-Loop Pattern
Datab)
0
RD
D
0
1
1
0
1
1
1
0
1
1
0
1
0
0
1
0
0
1
1
0
1
1
0
1
0
0
0
0
0
0
0
0
0
0
0
0
00
00
00
00
00
00
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
F
F
F
0
0
0
0
0
0
00000000
0
1
-
2,3
D,D
RD
D
-
4
00110011
5
-
-
6,7
D,D
1
2
3
4
5
6
7
8-15
16-23
24-31
32-39
40-47
48-55
56-63
repeat Sub-Loop 0, but BA[2:0] = 1
repeat Sub-Loop 0, but BA[2:0] = 2
repeat Sub-Loop 0, but BA[2:0] = 3
repeat Sub-Loop 0, but BA[2:0] = 4
repeat Sub-Loop 0, but BA[2:0] = 5
repeat Sub-Loop 0, but BA[2:0] = 6
repeat Sub-Loop 0, but BA[2:0] = 7
a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL.
a)
Table 8 - IDD4W Measurement-Loop Pattern
Datab)
0
WR
D
D,D
WR
D
0
1
1
0
1
1
1
0
1
1
0
1
0
0
1
0
0
1
0
0
1
0
0
1
1
1
1
1
1
1
0
0
0
0
0
0
00
00
00
00
00
00
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
F
F
F
0
0
0
0
0
0
00000000
0
1
2,3
4
5
6,7
-
-
00110011
-
-
D,D
1
2
3
4
5
6
7
8-15
16-23
24-31
32-39
40-47
48-55
56-63
repeat Sub-Loop 0, but BA[2:0] = 1
repeat Sub-Loop 0, but BA[2:0] = 2
repeat Sub-Loop 0, but BA[2:0] = 3
repeat Sub-Loop 0, but BA[2:0] = 4
repeat Sub-Loop 0, but BA[2:0] = 5
repeat Sub-Loop 0, but BA[2:0] = 6
repeat Sub-Loop 0, but BA[2:0] = 7
a) DM must be driven LOW all the time. DQS, DQS are used according to WR Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Write Command. Outside burst operation, DQ signals are MID-LEVEL.
Rev. 0.1 / Dec. 2009
57
a)
Table 9 - IDD5B Measurement-Loop Pattern
Datab)
0
1
REF
D, D
D, D
0
1
1
0
0
1
0
0
1
1
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
F
0
0
0
-
-
-
0
1.2
00
00
3,4
5...8
repeat cycles 1...4, but BA[2:0] = 1
repeat cycles 1...4, but BA[2:0] = 2
repeat cycles 1...4, but BA[2:0] = 3
repeat cycles 1...4, but BA[2:0] = 4
repeat cycles 1...4, but BA[2:0] = 5
repeat cycles 1...4, but BA[2:0] = 6
repeat cycles 1...4, but BA[2:0] = 7
9...12
13...16
17...20
21...24
25...28
29...32
33...nRFC-1
2
repeat Sub-Loop 1, until nRFC - 1. Truncate, if necessary.
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Rev. 0.1 / Dec. 2009
58
a)
Table 10 - IDD7 Measurement-Loop Pattern
ATTENTION! Sub-Loops 10-19 have inverse A[6:3] Pattern and Data Pattern than Sub-Loops 0-9
Datab)
0
1
0
1
2
...
ACT
RDA
D
0
0
1
0
1
0
1
0
0
1
1
0
0
0
0
0
0
0
00
00
00
0
1
0
0
0
0
0
0
0
0
0
0
-
00000000
-
repeat above D Command until nRRD - 1
nRRD
nRRD+1
nRRD+2
...
2*nRRD
3*nRRD
4*nRRD
ACT
RDA
D
0
0
1
0
1
0
1
0
0
1
1
0
0
0
0
1
1
1
00
00
00
0
1
0
0
0
0
F
F
F
0
0
0
-
00110011
-
repeat above D Command until 2* nRRD - 1
repeat Sub-Loop 0, but BA[2:0] = 2
repeat Sub-Loop 1, but BA[2:0] = 3
2
3
D
1
0
0
0
0
3
00
0
0
F
0
0
-
-
4
Assert and repeat above D Command until nFAW - 1, if necessary
repeat Sub-Loop 0, but BA[2:0] = 4
repeat Sub-Loop 1, but BA[2:0] = 5
repeat Sub-Loop 0, but BA[2:0] = 6
repeat Sub-Loop 1, but BA[2:0] = 7
5
6
7
8
nFAW
nFAW+nRRD
nFAW+2*nRRD
nFAW+3*nRRD
nFAW+4*nRRD
D
1
0
0
0
0
7
00
0
0
F
9
Assert and repeat above D Command until 2* nFAW - 1, if necessary
2*nFAW+0
2*nFAW+1
ACT
RDA
D
0
0
1
0
1
0
1
0
0
1
1
0
0
0
0
0
0
0
00
00
00
0
1
0
0
0
0
F
F
F
0
0
0
-
00110011
-
10
2&nFAW+2
Repeat above D Command until 2* nFAW + nRRD - 1
2*nFAW+nRRD
2*nFAW+nRRD+1
ACT
RDA
D
0
0
1
0
1
0
1
0
0
1
1
0
0
0
0
1
1
1
00
00
00
0
1
0
0
0
0
0
0
0
0
0
0
-
00000000
-
11
2&nFAW+nRRD+2
Repeat above D Command until 2* nFAW + 2* nRRD - 1
repeat Sub-Loop 10, but BA[2:0] = 2
repeat Sub-Loop 11, but BA[2:0] = 3
12 2*nFAW+2*nRRD
13 2*nFAW+3*nRRD
D
1
0
0
0
0
3
00
0
0
0
0
-
14 2*nFAW+4*nRRD
Assert and repeat above D Command until 3* nFAW - 1, if necessary
repeat Sub-Loop 10, but BA[2:0] = 4
15 3*nFAW
16 3*nFAW+nRRD
17 3*nFAW+2*nRRD
18 3*nFAW+3*nRRD
repeat Sub-Loop 11, but BA[2:0] = 5
repeat Sub-Loop 10, but BA[2:0] = 6
repeat Sub-Loop 11, but BA[2:0] = 7
D
1
0
0
0
0
7
00
0
0
0
0
-
19 3*nFAW+4*nRRD
Assert and repeat above D Command until 4* nFAW - 1, if necessary
a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL.
Rev. 0.1 / Dec. 2009
59
IDD Specifications (Tcase: 0 to 95oC)
* Module IDD values in the datasheet are only a calculation based on the component IDD spec.
The actual measurements may vary according to DQ loading cap.
1GB, 128M x 72 R-DIMM: HMT112R7TFR8A
Symbol
IDD0
DDR3L 1066
1124
1304
1034
1079
318
DDR3L 1333
1169
1349
1079
1124
318
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
note
IDD1
IDD2N
IDD2NT
IDD2P0
IDD2P1
IDD2Q
IDD3N
IDD3P
IDD4R
IDD4W
IDD5B
IDD6
408
408
1034
1079
408
1079
1124
453
1529
1529
1934
318
1619
1619
1979
318
IDD6ET
IDD6TC
IDD7
336
336
336
336
1889
2159
2GB, 256M x 72 R-DIMM: HMT125R7TFR8A
Symbol
IDD0
DDR3L 1066
1394
1574
1304
1394
408
DDR3L 1333
1484
1664
1394
1484
408
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
note
IDD1
IDD2N
IDD2NT
IDD2P0
IDD2P1
IDD2Q
IDD3N
IDD3P
IDD4R
IDD4W
IDD5B
IDD6
588
588
1304
1394
588
1394
1484
678
1799
1799
2204
408
1934
1934
2294
408
IDD6ET
IDD6TC
IDD7
444
444
444
444
2159
2474
Rev. 0.1 / Dec. 2009
60
2GB, 256M x 72 R-DIMM: HMT125R7TFR4A
Symbol
IDD0
DDR3L 1066
1484
1844
1304
1394
408
DDR3L 1333
1574
1934
1394
1484
408
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
note
IDD1
IDD2N
IDD2NT
IDD2P0
IDD2P1
IDD2Q
IDD3N
IDD3P
IDD4R
IDD4W
IDD5B
IDD6
588
588
1304
1394
588
1394
1484
678
2294
2294
3104
408
2474
2474
3194
408
IDDET
IDD6TC
IDD7
444
444
444
444
3014
3554
4GB, 512M x 72 R-DIMM: HMT151R7TFR4A
Symbol
IDD0
DDR3L 1066
2024
2384
1844
2024
588
DDR3L 1333
2204
2564
2024
2204
588
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
note
IDD1
IDD2N
IDD2NT
IDD2P0
IDD2P1
IDD2Q
IDD3N
IDD3P
IDD4R
IDD4W
IDD5B
IDD6
948
948
1844
2024
948
2024
2204
1128
3104
3104
3824
588
2834
2834
3644
588
IDDET
IDD6TC
IDD7
660
660
660
660
3554
4184
Rev. 0.1 / Dec. 2009
61
4GB, 512M x 72 R-DIMM: HMT151R7TFR8A
Symbol
IDD0
DDR3L 1066
1934
2114
1844
2024
588
DDR3L 1333
2114
2294
2024
2204
588
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
note
IDD1
IDD2N
IDD2NT
IDD2P0
IDD2P1
IDD2Q
IDD3N
IDD3P
IDD4R
IDD4W
IDD5B
IDD6
948
948
1844
2024
948
2024
2204
1128
2564
2564
2924
588
2339
2339
2744
588
IDDET
IDD6TC
IDD7
660
660
660
660
2699
3104
Rev. 0.1 / Dec. 2009
62
Module Dimensions
128Mx72 - HMT112R7TFR8A
Front
133.35
128.95
SPD/TS
2.10
± 0.15
4X3.00
± 0.10
Detail A
Detail B
Detail C
1
120
1
2X3.00
±
0.10
5.175
71.00
47.00
5.0
Back
121
240
1
Side
3.43mm max
Detail of Contacts C
Detail of Contacts B
Detail of Contacts A
0.80
± 0.05
1.20
± 0.15
2.50
3
± 0.1
0.3~0.1
1.00
1.50
± 0.10
5.00
1.27 ± 010mm
max
Note:
1. ±0.13tolerance on all dimensions unless otherwise stated.
Units: millimeters
Rev. 0.1 / Dec. 2009
63
256Mx72 - HMT125R7TFR8A
Front
133.35
128.95
SPD/TS
2.10
± 0.15
4X3.00
± 0.10
Detail A
Detail C
Detail B
47.00
1
120
1
2X3.00
±
0.10
5.175
71.00
5.0
Back
121
240
1
Side
3.43mm max
Detail of Contacts C
Detail of Contacts A
Detail of Contacts B
1.20
± 0.15
0.80
± 0.05
2.50
3
± 0.1
0.3+0.1
1.00
1.50
± 0.10
5.00
1.27 ± 010mm
max
Note:
1. ±0.13tolerance on all dimensions unless otherwise stated.
Units: millimeters
Rev. 0.1 / Dec. 2009
64
256Mx72 - HMT125R7TFR4A
Front
133.35
128.95
SPD/TS
2.10
± 0.15
4X3.00
± 0.10
Detail A
Detail C
Detail B
47.00
1
120
1
2X3.00
±
0.10
5.175
71.00
5.0
Back
121
240
1
Side
3.43mm max
Detail of Contacts C
Detail of Contacts A
Detail of Contacts B
1.20
± 0.15
0.80
± 0.05
2.50
3
± 0.1
0.3~0.1
1.00
1.50
± 0.10
5.00
1.27 ± 010mm
max
Note:
1. ±0.13tolerance on all dimensions unless otherwise stated.
Units: millimeters
Rev. 0.1 / Dec. 2009
65
512Mx72 - HMT151R7TFR4A
Front
133.35
128.95
Detail B
SPD/TS
2.10
± 0.15
4X3.00
± 0.10
Detail A
1
120
1
2X3.00
± 0.10
71.00
47.00
Detail C
5.175
Detail D
5.0
Back
121
240
1
Side
3.46mm max
Detail of Contacts D
Detail of Contacts A
Detail of Contacts B
Detail of Contacts C
1.20
± 0.15
0.80
± 0.05
2.50
14.90
13.60
0.4
3
± 0.1
0.3~0.1
1.00
1.50
± 0.10
5.00
1.27 ± 010mm
max
Note:
1. ±0.13tolerance on all dimensions unless otherwise stated.
Units: millimeters
Rev. 0.1 / Dec. 2009
66
512Mx72 - HMT151R7TFR4A - Heat Spreader
Front
133.75
133.35
127
42.7
2.786
20.9
6.35
8
3.69
5.39
7.74
6.3
2.1
120
1
7.36
33.4
33.4
46.46
80.54
119.64
Back
57.2
2.7
121
240
Side
7.19mm max
1.27 ± 010mm
max
Note:
1. ±0.13tolerance on all dimensions unless otherwise stated.
2.In order to uninstall FDHS, please contact sales administrator.
Units: millimeters
67
Rev. 0.1 / Dec. 2009
512Mx72 - HMT151R7TFR8A
Front
14.90
13.60
Detail B
2.10
± 0.15
SPD/TS
3
3
±
±
0.1
0.1
Min 1.45
Detail A
1
1
120
2X3.0
± 0.10
71.00
47.00
Detail C
5.175
Detail D
5.0
128.95
133.35
Back
121
240
1
Side
3.46mm max
Detail of Contacts D
Detail of Contacts A
Detail of Contacts B
Detail of Contacts C
1.20
± 0.15
0.80
± 0.05
2.50
14.90
0.4
13.60
3
± 0.1
0.3~0.1
1.00
1.50
± 0.10
5.00
1.27 ± 010mm
max
Note:
1. ±0.13tolerance on all dimensions unless otherwise stated.
Units: millimeters
68
Rev. 0.1 / Dec. 2009
512Mx72 - HMT151R7TFR8A - Heat Spreader
Front
133.75
133.35
127
42.7
2.786
20.9
6.35
8
3.69
5.39
7.74
6.3
2.1
36.7
120
1
7.36
33.4
33.4
46.46
80.54
119.64
Back
57.2
2.7
121
240
Side
7.19mm max
1.27 ± 010mm
max
Note:
1. ±0.13tolerance on all dimensions unless otherwise stated.
2.In order to uninstall FDHS, please contact sales administrator.
Units: millimeters
Rev. 0.1 / Dec. 2009
69
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