HYMP125F72CP8D5-Y5 [HYNIX]
240pin Fully Buffered DDR2 SDRAM DIMMs; 240PIN全缓冲DDR2 SDRAM DIMM内存模块型号: | HYMP125F72CP8D5-Y5 |
厂家: | HYNIX SEMICONDUCTOR |
描述: | 240pin Fully Buffered DDR2 SDRAM DIMMs |
文件: | 总32页 (文件大小:1179K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb C-ver.
This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow
host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
isolates the DDR2 SDRAMs from the channel. This single component located in the front side center of
each DIMM, acts as a repeater and buffer for all signals and commands which are exchanged between the
host controller and the DDR2 SDRAMs including data in and output. The AMB communicates with the host
controller and adjacent DIMMs on a system board using an industry standard Differential Point to Point
Link Interface at 1.5V power.
The AMB also allows buffering of memory traffic to support large memory capacities. All memory control
for the DDR2 SDRAM devices resides in the host, including memory request initiation, timing, refresh,
scrubbing, sparing, configuration access and power management. The AMB interface is responsible for
handling channel and memory requests to and from the local FBDIMM and for forwarding request to other
FBDIMMs on the memory channel.
FEATURES
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240 pin Fully Buffered ECC Dual-In-Line DDR2 SDRAM Module
JEDEC standard Double Data Rate2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply
All inputs and outputs are compatible with SSTL_1.8 interface
Built with 1Gb DDR2 SDRAMs in 60ball FBGA
Host interface and AMB component industry standard compliant
MBIST, IBIST test functions
8 Bank architecture
OCD (Off-Chip Driver Impedance Adjustment)
ODT (On-Die Termination)
Fully differential clock operations (CK & CK)
Programmable Burst Length 4 / 8 with both sequential and interleave mode
Auto refresh and self refresh supported
8192 refresh cycles / 64ms
Serial presence detect with EEPROM
133.35 x 30.35 mm form factor
RoHS compliant
Full DIMM Heat Spreader
This document is a general product description and is subject to change without notice. Hynix Electronics does not
assume any responsibility for use of circuits described. No patent licenses are implied.
Rev 1.01 /Sep. 2008
1
1240pin Fully Buffered DDR2 SDRAM DIMMs
ORDERING INFORMATION
AMB
# of
DRAMs ranks
# of
Part Name
Density
Org.
H. S type Height
Vendor Version
HYMP112F72CP8N3-C4/Y5
HYMP112F72CP8D3-C4/Y5/S5/S6
HYMP112F72CP8D5-C4/Y5/S5/S6
HYMP125F72CP8N3-C4/Y5
Intel
IDT
D1
C1
1GB
2GB
4GB
128Mx72
9
1
2
2
AMB+
D1
Intel
IDT
HYMP125F72CP8D3-C4/Y5/S5/S6
HYMP125F72CP8D5-C4/Y5/S5/S6
HYMP151F72CP4N3-C4/Y5
256Mx72
512Mx72
18
36
C1
Full
AMB+
D1
30.35mm
Module
Intel
IDT
HYMP151F72CP4D3-C4/Y5/S5/S6
HYMP151F72CP4D5-C4/Y5/S5/S6
HYMP151F72CP8D5-Y5/S5/S6
HYMP31GF72CMP4D5-Y5/S5/S6
C1
AMB+
AMB+
AMB+
4GB
8GB
512Mx72
1Gx72
36
72
4
4
IDT
IDT
Note
*: The 14th and 15th digits stand for AMB vendor and revision.
**: ‘P’ of Part Number;12th digit, stands for lead free products.
SPEED GRADE & KEY PARAMETERS
Speed Grade
C4
Y5
S5/6
Unit
DDR2 DRAM Speed Grade
FB-DIMM Speed Grade
DDR2 533 4-4-4
DDR2 667 5-5-5
DDR2 800 5-5-5 / 6-6-6
PC2 4200
6.4
PC2 5300
8.0
PC2 6400
9.6
FB-DIMM Peak Channel Throughput
FB-DIMM Link Transfer Rate
GByte/S
GT/s
3.2
4.0
4.8
ADDRESS TABLE
# of
DRAMs
Refresh
Method
Density Organization Ranks SDRAMs
# of row/bank/column Address
1GB
2GB
4GB
4GB
8GB
128M x 72
256M x 72
512M x 72
512M x 72
1G x 72
1
2
2
4
4
128Mbx8
128Mbx8
256Mbx4
128Mbx8
256Mbx4
9
14(A0~A13)/3(BA0~BA2)/10(A0~A9)
14(A0~A13)/3(BA0~BA2)/10(A0~A9)
14(A0~A13)/3(BA0~BA2)/11(A0~A9,A11)
14(A0~A13)/3(BA0~BA2)/10(A0~A9)
14(A0~A13)/3(BA0~BA2)/11(A0~A9,A11)
8K / 64ms
8K / 64ms
8K / 64ms
8K / 64ms
8K / 64ms
18
36
36
72
Rev 1.01 / Sep. 2008
2
1240pin Fully Buffered DDR2 SDRAM DIMMs
Input/Output Functional Description
Pin Name
SCK
type
Input
Polarity
Positive
Negative
Positive
Negative
Positive
Negative
Positive
Negative
Positive
Negative
-
Function Description
Count
1
System clock input
SCK
Input
System clock input
1
PN[13:0]
PN[13:0]
PS[9:0]
PS[9:0]
SN[13:0]
SN[13:0]
SS[9:0]
SS[9:0]
SCL
Output
Output
Input
Primary Northbound Data
Primary Northbound Data
14
14
10
10
14
14
10
10
1
Primary Southbound Data
Input
Primary Southbound Data
Output
Output
Input
Secondary Northbound Data
Secondary Northbound Data
Secondary Southbound Data
Input
Secondary Southbound Data
Input
Serial Presence Detect (SPD) Clock Input
SPD Data Input / Output
SDA
Input / Output
Input
-
1
SA[2:0]
-
SPD Address inputs, also used to select the DIMM number in the AMB
3
Voltage ID: These pins must be unconnected for DDR2-based Fully buff-
ered DIMMs
2
VID[1:0]
Input
-
RESET
RFU
Input
-
Active Low
-
AMB reset signal
1
16
8
Reserved for Future Use
VCC
Supply
Supply
Supply
Supply
Supply
+1.5V
+1.8V
+0.9V
+3.3V
AMB Core Power and AMB channel Interface Power(1.5volt)
DRAM Power and AMB DRAM I/O Power
DRAM Address/Command/Clock Termination Power(VDD/2)
SPD Power
VDD
24
4
VTT
VDDSPD
VSS
1
Ground
80
1
The DNU/M_Test pin provides an external connection on R/Cs A-D for
testing the margin of Vref which is produced by a voltage divider on the
module. It is not intended to be used in normal system operation and
must not be connected(DNU) in a system. This test pin may have other
features on future card designs and if it does, will be included in this
specification at that time.
DNU/M_Test
- / Analog
- / 0.9V
Total
240
Rev 1.01 / Sep. 2008
3
1240pin Fully Buffered DDR2 SDRAM DIMMs
PIN ASSIGNMENT
Pin
1
Name
VDD
VDD
VDD
VSS
VDD
VDD
VDD
VSS
VCC
VCC
VSS
VTT
Pin
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
Name
PN13
VSS
VSS
RFU*
RFU*
VSS
VSS
PN12
PN12
VSS
PN6
Pin
81
Name
VSS
PS4
PS4
VSS
VSS
RFU*
RFU*
VSS
VSS
PS9
PS9
VSS
PS5
PS5
VSS
PS6
PS6
VSS
PS7
PS7
VSS
PS8
PS8
VSS
RFU**
RFU**
VSS
VDD
VDD
VSS
VDD
VDD
VDD
VSS
VDD
VDD
VTT
SA2
SDA
SCL
Pin
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
Name
VDD
VDD
VDD
VSS
Pin
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
185
186
187
188
Name
SN13
VSS
VSS
RFU*
RFU*
VSS
VSS
SN12
SN12
VSS
SN6
Pin
201
202
203
204
205
206
207
208
209
210
211
212
213
214
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
238
239
240
Name
VSS
SS4
2
82
3
83
SS4
4
84
VSS
VSS
RFU*
RFU*
VSS
VSS
SS9
5
85
VDD
VDD
VDD
VSS
6
86
7
87
8
88
9
89
VCC
VCC
VSS
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
90
91
SS9
PN6
92
VCC
VCC
VSS
SN6
VSS
SS5
VCC
VSS
VTT
VSS
PN7
93
VSS
SN7
94
SS5
PN7
95
VTT
SN7
VSS
SS6
VID1
RESET
VSS
RFU**
RFU**
VSS
PN0
PN0
VSS
PN1
PN1
VSS
PN2
PN2
VSS
PN3
PN3
VSS
PN4
PN4
VSS
PN5
PN5
VSS
PN13
VSS
PN8
96
VID0
DNU/M_Test
VSS
VSS
SN8
97
SS6
PN8
98
SN8
VSS
SS7
VSS
PN9
99
RFU**
RFU**
VSS
VSS
SN9
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
SS7
PN9
SN9
VSS
SS8
VSS
PN10
PN10
VSS
PN11
PN11
VSS
SN0
VSS
SN10
SN10
VSS
SN11
SN11
VSS
SN0
SS8
VSS
VSS
RFU*
RFU*
VSS
SCK
SCK
VSS
VDD
VDD
VDD
VSS
VDD
VDD
VTT
SN1
SN1
VSS
SN2
Key
SN2
Key
69
70
71
72
73
74
75
76
77
78
79
80
VSS
PS0
PS0
VSS
PS1
PS1
VSS
PS2
PS2
VSS
PS3
PS3
VSS
189
190
191
192
193
194
195
196
197
198
199
200
VSS
SS0
SS0
VSS
SS1
SS1
VSS
SS2
SS2
VSS
SS3
SS3
SN3
SN3
VSS
SN4
SN4
VSS
SN5
SN5
VDDSPD
SA0
VSS
SN13
SA1
NC= No Connect, RFU= Reserved for Future Use.
Note:
*: These pin positions are reserved for forwarded clocks to be used in future module implementations
**: These pin positions are reserved for future architecture flexibility
1) The following signals are CRC bits and thus appear out of the normal sequence:
PN12/ PN12, SN12 / SN12, PN13 / PN13, SN13 / SN13,PS9 / PS9, SS9 / SS9
Rev 1.01 / Sep. 2008
4
1240pin Fully Buffered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
1GB(128Mbx72) ECC FB-DIMM
/S0
DQS4
/DQS4
DQS13
DQS0
/DQS0
DQS9
DM
NU
/CS
DQS /DQS
DQS /DQS
DQS /DQS
DM
RDQS /RDQS
I/O 0
NU
/CS
DQS /DQS
RDQS /RDQS
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
I/O
I/O
I/O
0
1
2
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
I/O 1
I/O 2
D4
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
D0
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS5
/DQS5
DQS14
DQS1
/DQS1
DQS10
DM
NU
DM
RDQS /RDQS
I/O 0
NU
/CS
/CS
DQS /DQS
RDQS /RDQS
I/O
I/O
I/O
0
1
2
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
I/O 1
I/O 2
D5
D1
I/O
I/O
I/O
3
4
5
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O
I/O
6
7
DQS6
/DQS6
DQS15
DQS2
/DQS2
DQS11
DM
NU
/CS
DM
RDQS /RDQS
I/O 0
NU
/CS
DQS /DQS
RDQS /RDQS
I/O 0
I/O 1
I/O 2
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
I/O 1
I/O 2
D6
D2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS3
DQS7
/DQS7
DQS16
/DQS3
DQS12
DM
RDQS /RDQS
I/O 0
NU
DM
RDQS /RDQS
I/O 0
NU
/CS
DQS /DQS
/CS
DQS /DQS
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
I/O 1
I/O 2
I/O 1
I/O 2
D3
D7
I/O 3
I/O 4
I/O 5
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 6
I/O 7
DQS8
/DQS8
DQS17
All address/command/control/clock
VTT
DM
RDQS /RDQS
I/O 0
NU
/CS
DQS /DQS
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
I/O 1
I/O 2
D8
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
SN0-SN13
/SN0-/SN13
SS0-SS9
PN0-PN13
Serial PD
U0
/PN0-/PN13
PS0-PS9
SDA
A2
SCL
SCL
WP
SDA
VTT
VCC
Terminators
AMB
/SS0-/SS9
/PS0-/PS9
A
M
B
A0
A1
/S0-/CS(all SDRAMs)
CKE0 -> CKE
DQ0-DQ63
CB0-CB7
DQS0-DQS17
/DQS0-/DQS8
VDD SPD
Serial PD,AMB
SA0 SA1 SA2
VDD
VREF
VSS
DO-D8, AMB
DO-D8
ODT -> ODT
BA0-BA2
SCL
SDA
SA0-SA2
A0-A15
/RAS
DO-D8,SPD, AMB
/CAS
/RESET
/WE
CK/ /CK
SCK/ /SCK
Notes :
1. DQ-to-I/O wiring may be changed within a byte.
2. There are two physical copies of each address/command/control/clock.
Rev 1.01 / Sep. 2008
5
1240pin Fully Buffered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
2GB(256Mbx72) ECC FB-DIMM
/S1
/S 0
D Q S
/D Q S
D Q S 9
D Q S 5
/D Q S5
D Q S14
D M
NU
/R DQ S
DM
DQ S /D Q S
NU
DQ S /DQ S
D M
N U
DM
NU
/CS
/CS
/CS
/RDQ S
DQ S /DQ S
DQ S /DQ S
DQ S /DQ S
D Q S /DQ S
DQ S /DQ S
DQ S /DQ S
DQ S /DQ S
DQ S /DQ S
/CS
RDQ S
RDQ S
RDQ S /RDQ S
RDQ S /RDQ S
D Q 40
D Q 41
D Q 42
D Q 43
D Q 44
D Q 45
D Q 46
D Q 47
I/O
I/O
I/O
0
1
2
I/O
I/O
I/O
0
1
2
D Q 0
D Q 1
D Q 2
D Q 3
D Q 4
D Q 5
D Q 6
D Q 7
I/O
I/O
I/O
0
1
2
I/O
I/O
I/O
0
1
2
D0
D9
D 5
D 14
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
D Q S1
/D Q S 1
D Q S 10
D Q S6
/D Q S 6
D Q S15
D M
RDQ S
I/O
I/O
I/O
DM
RDQ S
I/O
I/O
I/O
D M
RDQ S
I/O
I/O
I/O
DM
DQ S /DQ S
NU
/CS
/RDQ S
DQ S /DQ S
NU /CS
/R DQ S
NU /CS
/RDQ S
NU /CS
RDQ S
/RDQ S
D Q48
D Q49
D Q50
D Q51
D Q52
D Q53
D Q54
D Q 55
D Q 8
D Q 9
0
1
2
0
1
2
0
1
2
I/O
I/O
I/O
0
1
2
D Q10
D Q11
D Q12
D Q13
D Q14
D Q 15
D1
D 6
D 15
D10
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
D Q S7
/D Q S7
D Q S16
D Q S2
/D Q S 2
D Q S11
D M
RDQ S
I/O
I/O
I/O
DM
D M
RDQ S
I/O
I/O
I/O
DM
DQ S /DQ S
NU
DQ S /DQ S
NU /CS
/RDQ S
NU /CS
RDQ S
/RDQ S
/CS
NU
/RDQ S
/CS
RDQ S
/RDQ S
D Q16
D Q17
D Q18
D Q19
D Q20
D Q21
D Q22
D Q 23
D Q 56
D Q 57
D Q 58
D Q 59
D Q 60
D Q 61
D Q 62
D Q 63
0
1
2
0
1
2
I/O
I/O
I/O
0
1
2
I/O
I/O
I/O
0
1
2
D 7
D 16
D2
D11
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
D Q S 8
/D Q S 8
D Q S17
D Q S 3
/D Q S3
D Q S12
D M
RDQ S
I/O
I/O
I/O
DM
RDQ S
I/O
I/O
I/O
D M
RDQ S
I/O
I/O
I/O
DM
RDQ S
I/O
I/O
I/O
DQ S /D Q S
NU
/RDQ S
DQ S /DQ S
NU
/RDQ S
NU
/CS
/RDQ S
/CS
NU
/RDQ S
/CS
/CS
D Q24
D Q25
D Q26
D Q27
D Q28
D Q29
D Q30
D Q 31
C B0
C B1
C B2
C B3
C B4
C B5
C B6
C B7
0
1
2
0
1
2
0
1
2
0
1
2
D3
D12
D 8
D 17
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
D Q S4
/D Q S4
D Q S 13
D M
RDQ S
DM
NU
DQ S /D Q S
NU
/RDQ S
DQ S /DQ S
/CS
/RDQ S
/CS
RDQ S
D Q32
D Q33
D Q34
D Q35
D Q36
D Q37
D Q38
D Q 39
I/O
I/O
I/O
0
1
2
I/O
I/O
I/O
0
1
2
D 13
D 4
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
SN0-SN13
PN0-PN13
/PN0-/PN13
PS0-PS9
/SN0-/SN13
All address/com m and/control/clock
VTT
SS0-SS9
/SS0-/SS9
/S0-/CS (D0-D8)
CKE0 -> CKE (D0-D8)
/S1-/CS (D9-D17)
CKE1 -> CKE (D9-D17)
/PS0-/PS9
A
M
B
DQ0-DQ63
CB0-CB7
DQS0-DQS17
/DQS0-/DQS8
VTT
VCC
Term inators
AMB
Serial PD
U0
ODT -> ODT (all SDRAMs)
BA0-BA2 (all SDRAMs)
A0-A15 (all SDRAMs)
/RAS (all SDRAMs)
/CAS (all SDRAMs)
/W E (all SDRAM s)
CK, /CK (all SDRAMs)
SDA
A2
SCL
SCL
W P
SDA VDD SPD
Serial PD,AM B
SCL
SDA
SA0-SA2
VDD
DO-D17, AMB
DO-D17
A0
A1
VREF
VSS
/RESET
SA0 SA1 SA2
DO-D17,SPD, AMB
SCK, /SCK
Notes :
1. DQ-to-I/O wiring may be changed within a byte.
2. There are two physical copies of each address/command/control/clock.
Rev 1.01 / Sep. 2008
6
1240pin Fully Buffered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
4GB(512Mbx72) ECC FB-DIMM - 2 Rank
VSS
/S1
/S0
/DQS9
DQS9
/DQS0
DQS0
DQS/D Q S /CS DM
I/O 0
DQS/D Q S /CS DM
I/O 0
DQS/D Q S /CS DM
I/O 0
DQS/D Q S /CS DM
I/O 0
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
I/O 1
I/O 1
I/O 1
I/O 1
D27
I/O 2
D9
D0
D18
I/O 2
I/O 3
I/O 2
I/O 3
I/O 2
I/O 3
I/O 3
/DQS10
DQS10
/DQS1
DQS1
DM
DM
DQS/D Q S /CS DM
I/O 0
DQS/D Q S /CS DM
I/O 0
DM
DM
DQS/D Q S /CS
I/O 0
DQS/D Q S /CS
I/O 0
DQ12
DQ13
DQ14
DQ15
/DQS11
DQS11
DQ 8
DQ 9
DQ10
DQ11
/DQS2
DQS2
I/O 1
I/O 1
I/O 1
I/O 1
D10
D28
D1
D19
I/O 2
I/O 3
I/O 2
I/O 3
I/O 2
I/O 2
I/O 3
I/O 3
DQS/D Q S /CS DM
I/O 0
DQS/D Q S /CS DM
I/O 0
DQS/D Q S /CS
I/O 0
DQS/D Q S /CS
I/O 0
DQ20
DQ21
DQ22
DQ23
DQ16
DQ17
DQ18
DQ19
I/O 1
I/O 1
I/O 1
I/O 2
I/O 1
I/O 2
D11
D29
D2
D20
I/O 2
I/O 2
I/O 3
I/O 3
I/O 3
I/O 3
/DQS14
DQS14
/DQS3
DQS3
DM
DM
DM
DM
DM
DQS/D Q S /CS
I/O 0
DQS/D Q S /CS
I/O 0
DQS/D Q S /CS DM
I/O 0
DQS/D Q S /CS DM
I/O 0
DQ28
DQ29
DQ30
DQ31
/DQS13
DQS13
DQ24
DQ25
DQ26
DQ27
I/O 1
I/O 1
I/O 1
I/O 1
D21
I/O 2
D12
D30
D3
I/O 2
I/O 3
I/O 2
I/O 3
I/O 2
I/O 3
I/O 3
/DQS4
DQS4
DQS/D Q S /CS DM
I/O 0
DM
DM
DM
DM
DQS
/D Q S
/CS
DQS/D Q S /CS
I/O 0
DQS/D Q S /CS
I/O 0
DQ36
DQ37
DQ38
DQ39
DQ 32
DQ 33
DQ 34
DQ 35
/DQS5
DQS5
I/O 0
I/O 1
I/O 2
I/O 3
I/O 1
I/O 1
I/O 1
D22
I/O 2
D13
D31
D4
I/O 2
I/O 2
I/O 3
I/O 3
I/O 3
/DQS14
DQS14
DM
DM
DQS/D Q S /CS
I/O 0
I/O 1
D14
I/O 2
DQS/D Q S /CS
I/O 0
I/O 1
D32
I/O 2
DQS/D Q S /CS
I/O 0
DQS/D Q S /CS
I/O 0
I/O 1
D23
I/O 2
DQ44
DQ45
DQ46
DQ47
/DQS15
DQS15
DQ40
DQ41
DQ42
DQ43
/DQS6
DQS6
I/O 1
I/O 2
D5
I/O 3
I/O 3
I/O 3
I/O 3
DQS/D Q S /CS
I/O 0
I/O 1
D15
I/O 2
DQS/D Q S /CS
I/O 0
I/O 1
D33
I/O 2
DQS/D Q S /CS DM
I/O 0
DQS/D Q S /CS DM
I/O 0
DQ52
DQ53
DQ54
DQ55
/DQS16
DQS16
DQ48
DQ49
DQ50
DQ51
/DQS7
DQS7
I/O 1
I/O 2
I/O 1
I/O 2
D6
D24
I/O 3
I/O 3
I/O 3
I/O 3
DQS/D Q S /CS DM
I/O 0
DQS/D Q S /CS DM
I/O 0
DM
DM
DQS/D Q S /CS
I/O 0
DQS/D Q S /CS
I/O 0
DQ60
DQ61
DQ62
DQ63
DQ56
DQ57
DQ58
DQ59
I/O 1
I/O 1
I/O 1
D16
I/O 2
I/O 3
I/O 1
D34
I/O 2
I/O 3
D7
D25
I/O 2
I/O 2
I/O 3
I/O 3
/DQS17
DQS17
/DQS8
DQS8
DM
DM
DQS/D Q S /CS
I/O 0
DQS/D Q S /CS
I/O 0
DQS/D Q S /CS DM
I/O 0
DQS/D Q S /CS DM
I/O 0
CB4
CB5
CB6
CB7
CB0
CB1
CB2
CB3
I/O 1
I/O 1
I/O 1
I/O 1
D17
D35
D8
D26
I/O 2
I/O 3
I/O 2
I/O 3
I/O 2
I/O 2
I/O 3
I/O 3
All address/command/control/clock
VTT
SN0-SN13
PN0-PN13
/PN0-/PN13
PS0-PS9
/SN0-/SN13
SS0-SS9
VTT
VCC
Terminators
/SS0-/SS9
/PS0-/PS9
A
M
B
AMB
/S0-/CS (all SDRAMs)
CKE0 -> CKE (all SDRAMs)
DQ0-DQ63
CB0-CB7
DQS0-DQS17
/DQS0-/DQS17
VDD SPD
Serial PD
Serial PD,AMB
VDD
SCL
SCL
SDA
SDA
DO-D35, AMB
DO-D35
ODT -> ODT (all SDRAMs)
BA0-BA2 (all SDRAMs)
A0-A15 (all SDRAMs)
/RAS (all SDRAMs)
/CAS (all SDRAMs)
/WE (all SDRAMs)
CK, /CK (all SDRAMs)
U0
SCL
SDA
SA0-SA2
VREF
VSS
WP A0 A1 A2
SA0 SA1 SA2
DO-D35, SPD, AMB
/RESET
SCK, /SCK
Notes:
1. DQ-to-I/O wiring may be changed within a byte.
2. There are two physical copies of each address/command/control/clock.
Rev 1.01 / Sep. 2008
7
1240pin Fully Buffered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
4GB(512Mbx72) ECC FB-DIMM - 4 Rank
DQS0
DQS0
DQS9
S3
S0
S1
S2
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQ0
I/O 0
I/O 0
I/O 0
I/O 0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
D0
D9
D18
D27
DQ7
I/O 7
I/O 7
I/O 7
I/O 7
DQS1
DQS1
DQS10
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQ8
I/O 0
I/O 0
I/O 0
I/O 0
DQ9
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
DQ10
DQ11
DQ12
DQ13
DQ14
D1
D10
D19
D28
DQ15
I/O 7
I/O 7
I/O 7
I/O 7
DQS2
DQS2
DQS11
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQ16
I/O 0
I/O 0
I/O 0
I/O 0
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
D2
D11
D20
D29
DQ23
I/O 7
I/O 7
I/O 7
I/O 7
DQS3
DQS3
DQS12
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQ24
I/O 0
I/O 0
I/O 0
I/O 0
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
D3
D12
D21
D30
DQ31
I/O 7
I/O 7
I/O 7
I/O 7
DQS4
DQS4
DQS13
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQ32
I/O 0
I/O 0
I/O 0
I/O 0
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
D4
D13
D22
D31
DQ39
I/O 7
I/O 7
I/O 7
I/O 7
Rev 1.01 / Sep. 2008
8
1240pin Fully Buffered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
4GB(512Mbx72) ECC FB-DIMM - 4 Rank
DQS5
DQS5
DQS14
S3
S0
S1
S2
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQ40
I/O 0
I/O 0
I/O 0
I/O 0
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
D5
D14
D23
D32
DQ47
I/O 7
I/O 7
I/O 7
I/O 7
DQS6
DQS6
DQS15
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQ48
I/O 0
I/O 0
I/O 0
I/O 0
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
D6
D15
D24
D33
DQ55
I/O 7
I/O 7
I/O 7
I/O 7
DQS7
DQS7
DQS16
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQ56
I/O 0
I/O 0
I/O 0
I/O 0
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
D7
D16
D25
D34
DQ63
I/O 7
I/O 7
I/O 7
I/O 7
DQS8
DQS8
DQS17
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DM/ NU/
RDQS RDQS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQS DQS CS
DQ24
I/O 0
I/O 0
I/O 0
I/O 0
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
D8
D17
D26
D35
DQ31
I/O 7
I/O 7
I/O 7
I/O 7
SN0-SN13
Serial PD
SN0-SN13
SS0-SS9
SS0-SS9
CKE0 -> CKE(D0-D17)
CKE1 -> CKE(D18-D35)
ODT0 -> ODT(D0-D17)
ODT1 -> ODT(D18-D26)
ODT2 -> ODT(D27-D35)
BA0-BA2 (all SDRAMs)
PN0-PN13
SCL
SDA
PN0-PN13
PS0-PS9
PS0-PS9
WP A0 A1 A2
SA0 SA1 SA2
A
M
B
VTT
DQ0-DQ63
CB0-CB7
DQS0-DQS17
Terminators
VCC
AMB
SPD,AMB
D0–D17,AMB
D0–D17
DQS0-DQS8
VDDSPD
VDD
SCL
SDA
SA1-SA2
SA0
A0,A1-A3-A5-A7-A15(all SDRAMs)
A2,A6 (D0-D7, D8-D16, D‘8-D25, D27-D34)
VREF
A2_ECC, A6_ECC (D8, D17, D26, D35)
RAS (all SDRAMs)
VSS
D0–D17,SPD,AMB
Note:
RESET
CAS (all SDRAMs)
WE (all SDRAMs)
CK/CK (all SDRAMs)
1. DQ-to-I/O wiring may be changed within a byte.
2. There are two physical copies of each address/command/control/clock excluding
CKE0/1, ODT1/2, CS
SCK/SCK
All address/command/control/clock
VTT
Rev 1.01 / Sep. 2008
9
1240pin Fully Buffered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
8GB(1Gbx72) ECC FB-DIMM - 4 Rank
VSS
S1
S3
S0
S2
DQS0
DQS0
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
DQ0
I/O 0
I/O 0
I/O 0
I/O 0
DQ1
DQ2
DQ3
DQS9
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D0
D36
D18
D54
DQS9
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
DQ4
I/O 0
I/O 0
I/O 0
I/O 0
DQ5
DQ6
DQ7
DQS1
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D1
D37
D19
D55
DQS1
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
DQ8
I/O 0
I/O 0
I/O 0
I/O 0
DQ9
DQ10
DQ11
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D2
D38
D20
D56
DQS10
DQS10
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
DQ12
I/O 0
I/O 0
I/O 0
I/O 0
DQ13
DQ14
DQ15
DQS2
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D3
D39
D21
D57
DQS2
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
DQ16
I/O 0
I/O 0
I/O 0
I/O 0
DQ17
DQ18
DQ19
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D4
D40
D22
D58
DQS11
DQS11
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
DQ20
I/O 0
I/O 0
I/O 0
I/O 0
DQ21
DQ22
DQ23
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D5
D41
D23
D59
DQS3
DQS3
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
DQ24
I/O 0
I/O 0
I/O 0
I/O 0
DQ25
DQ26
DQ27
DQS12
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D6
D42
D24
D60
DQS12
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
DQ28
I/O 0
I/O 0
I/O 0
I/O 0
DQ29
DQ30
DQ31
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D7
D43
D25
D61
DQS8
DQS8
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
CB0
I/O 0
I/O 0
I/O 0
I/O 0
CB1
CB2
CB3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D8
D44
D26
D62
Rev 1.01 / Sep. 2008
10
1240pin Fully Buffered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
8GB(1Gbx72) ECC FB-DIMM - 4 Rank
VSS
S1
S3
S0
S2
DQS4
DQS4
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
DQ32
I/O 0
I/O 0
I/O 0
I/O 0
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
DQ33
DQ34
DQ35
DQS13
D9
D45
D27
D63
DQS13
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
I/O 0
I/O 0
I/O 0
I/O 0
DQ36
DQ37
DQ38
DQ39
DQS5
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D10
D46
D28
D64
DQS5
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
DQ40
I/O 0
I/O 0
I/O 0
I/O 0
DQ41
DQ42
DQ43
DQS14
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D11
D47
D29
D65
DQS14
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
DQ44
I/O 0
I/O 0
I/O 0
I/O 0
DQ45
DQ46
DQ47
DQS6
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D12
D48
D30
D66
DQS6
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
DQ48
I/O 0
I/O 0
I/O 0
I/O 0
DQ49
DQ50
DQ51
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D13
D49
D31
D67
DQS15
DQS15
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
DQ52
I/O 0
I/O 0
I/O 0
I/O 0
DQ53
DQ54
DQ55
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D14
D50
D32
D68
DQS7
DQS7
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
I/O 0
I/O 0
I/O 0
I/O 0
DQ56
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
DQ57
DQ58
DQ59
DQS16
D15
D51
D33
D69
DQS16
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
DQ60
I/O 0
I/O 0
I/O 0
I/O 0
DQ61
DQ62
DQ63
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
D16
D52
D34
D70
DQS17
DQS17
DM
DM
DM
DM
CS DQS DQS
CS DQS DQS
CS DQS DQS
CS DQS DQS
I/O 0
I/O 0
I/O 0
I/O 0
CB4
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
I/O 1
I/O 2
I/O 3
CB5
CB6
CB7
D17
D53
D35
D71
SN0-SN13
SN0-SN13
SS0-SS9
VTT
Terminators
All address/command/control/clock
VTT
PN0-PN13
VCC
AMB
Serial PD
PN0-PN13
PS0-PS9
PS0-PS9
SS0-SS9
SPD,AMB
D0–D71,AMB
D0–D71
S0-CS(D36-D53)
S1-CS(D54-D71)
S2-CS(D0-D17)
S3-CS(D18-D35)
VDDSPD
VDD
SCL
SDA
A
M
B
WP A0 A1 A2
DQ0-DQ63
CB0-CB7
DQS0-DQS17
VREF
SA0 SA1 SA2
CKE0 -> CKE(D0-D17, D36-D53)
CKE2 -> CKE(D18-D35, D54-D71)
ODT -> ODT0(D36-D71)
VSS
D0–D71,SPD,AMB
Note:
DQS0-DQS17
1. DQ-to-I/O wiring may be changed within a byte.
BA0-BA2 (all SDRAMs)
A0-A13 (all SDRAMs)
ECCA2, ECCA6 -> NC
RAS (all SDRAMs)
CAS (all SDRAMs)
WE (all SDRAMs)
SCL
SDA
SA1-SA2
SA0
2. There are two physical copies of each address/command/control/clock excluding CS.
3. There are four physical copies of each clock.
4. ECCA2 and ECCA6 does not use(NC)
5. ODT pin(D0-D35) is connected to VSS
RESET
SCK/SCK
CK/CK (all SDRAMs)
Rev 1.01 / Sep. 2008
11
1240pin Fully Buffered DDR2 SDRAM DIMMs
Architecture
Advanced Memory Buffer Pin Description
Pin Name
Pin Description
FB-DIMM Channel Signals
System Clock Input, positive line
Count
99
1
SCK
SCK
System Clock Input, negative line
1
PN[13:0]
PN[13:0]
PS[9:0]
Primary Northbound Data, positive lines
Primary Northbound Data, negative lines
Primary Southbound Data, positive lines
Primary Southbound Data, negative lines
Secondary Northbound Data, positive lines
Secondary Northbound Data, negative lines
Secondary Southbound Data, positive lines
Secondary Southbound Data, negative lines
To an external precision calibration resistor connected to Vcc
DDR2 Interface Signals
14
14
10
10
14
14
10
10
1
PS[9:0]
SN[13:0]
SN[13:0]
SS[9:0]
SS[9:0]
FBDRES
175
9
DQS[8:0]
DQS[8:0]
Data Strobes, positive lines
Data Strobes, negative lines
9
Data Strobes(x4 DRAM only), positive lines. These signals are driven low to x8
DRAM on writes.
DQS[17:9]/DM[8:0]
9
DQS[17:9]
Data Strobes(x4 DRAM only), negative lines
Data
9
64
8
DQ[63:0]
CB[7:0]
Checkbits
A[15:0]A,A[15:0]B
BA[2:0]A,BA[2:0]B
RASA,RASB
CASA,CASB
WEA,WEB
Addresses. A10 is part of the pre-charge command
Bank Addresses
32
6
Part of command, with CAS, WE and CS[1:0]
Part of command, with RAS, WE and CS[1:0]
Part of command, with RAS, WE and CS[1:0]
On-die Termination Enable
2
2
2
ODTA,ODTB
CKE[1:0]A,CKE[1:0]B
CS[1:0]A,CS[1:0]B
2
Clock Enable(one per rank)
4
Chip Select(One per rank)
4
CLK[1:0] used on 9 and 18 device DIMMs, CLK[3:0] used on 36 device DIMMs.
CLK[3:2] should be output disabled when not in use.
CLK[3:0]
4
CLK[3:0]
Negative lines for CLK[3:0]
4
1
1
1
1
1
DDRC_C14
DDRC_B18
DDRC_C18
DDRC_B12
DDRC_C12
DDR Compensation: Common return pin for DDRC_B18 and DDRC_C18
DDR Compensation: Resistor connected to common return pin DDRC_C14
DDR Compensation: Resistor connected to common return pin DDRC_C14
DDR Compensation: Resistor connected to VSS
DDR Compensation: Resistor connected to VDD
Rev 1.01 / Sep. 2008
12
1240pin Fully Buffered DDR2 SDRAM DIMMs
Advanced Memory Buffer Pin Description
Pin Name
Pin Description
SPD Bus Interface Signals
Count
5
1
SCL
Serial Presence Detect (SPD) Clock Input
SPD Data Input / Output
SDA
1
SA{2:0]
SPD Address Inputs, also used to select the DIMM number in the AMB
Miscellaneous Signals
3
163
1
PLLTSTO
VCCAPLL
VSSAPLL
TEST_pin#
TESTLO_pin#
BFUNC
PLL Clock Observability Output
Analog VCC for the PLL. Tied with low pass filter to VCC.
Analog VSS for the PLL. Tied to
1
1
Leave floating on the DIMM
6
Tie to ground on the DIMM2
5
Tie to ground to set functionality as “buffer on DIMM.”
AMB reset signal
1
RESET
1
No connect. Many NC are connected to VDD on the DIMM, to lower the
impedance of the VDD power islands.
NC
129
RFU
Reserved for Future Use
Power/Ground Signals
AMB Core Power(1.5 Volt)
18
213
24
VCC
VCCFBD
VDD
VDDSPD
VSS
AMB Channel I/O Power(1.5 Volt)
AMB DRAM I/O Power (1.8 Volt)
SPD Power (3.3 Volt)
Ground
8
24
1
156
655
Total
Note:
1. System Clock Signals SCK and SCK switch at one half the DRAM CK/ CK frequency.
2. TESTLO_AB20 and TESTLO_AC20 should be configured for debug purposes on protype DIMMs: each pin should
have a zero ohm resistor pulldown to ground, and an unpopulated resistor pullup to VCC.
These resistors can be replaced on production DIMMs with a direct connection to ground.
Rev 1.01 / Sep. 2008
13
1240pin Fully Buffered DDR2 SDRAM DIMMs
Pin Assignments for the Advanced Memory Buffer(AMB) (Top View)
655-Ball LFBGA 0.8 mm x 0.8 mm pitch
Left Side
1
2
3
4
5
6
7
8
9
10
11
12
VDD
DDRC
DDRC
VSS
13
TEST
TESTLO
VSS
14
VDD VDD
VDD VSS
15
A
B
C
D
E
F
VSS DQ26 DQ12
VDD DQS3 DQS3 VSS
VSS DQS2 DQ18 VSS DQ4
VDD DQS10 DQ13
VDD DQS1 DQ10
DQ11 DQS1 VSS
DQ14 DQS10
VSS
DQ15
DQ7
VSS
DQS9
VSS
VSS
DQS9
DQ6
DQ9
VSS
DQ5
VSS
DQ3 DQS0
DQ1 VSS
DQ8
DDRC DQS17
DQS8 VDD
DQ19 DQS2 VSS DQ16 DQ24
DQ21 VSS DQ17 DQ29 VSS
DQS8
CB1
DQ25
DQ0
DQ2
BFUNC
VSS
VSS
CB0
RFU
VSS
VDD
VSS
VCC
VSS
VCC
VSS
VCC
VSS
VSS
CB2
CB3
RFU
VDD
VSS
VCC
VSS
VCC
VSS
VCC
VSS
VCC
VSS
VSS DQ20 DQ23 VSS DQ31 DQ27
VSS TESTLO TEST VSS DQS0
VDD
RFU
G
H
J
DQS11 DQS11 NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
VSS
DQS12 DQS12
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
DQ22 VSS
VSS CLK2
CLK2 CLK0
CLK0 VSS
ODT0A RFU
CS1A CS0A
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
DQ28 DQ30
VSS
CKE1A
RASA
VSS
VDD
VSS
BA1A
VSS
VSS
WEA
CKE0A
VSS
VDD
VSS
K
L
VCC
A0A
VCC
VSS
VSS
M
N
P
CASA
VSS
BA2A
A10A
A3A
VCC
BA0A
A1A
VCC
VSS
VSS
A6A
VSS
VSS
A8A
A2A
VCC
R
T
U
A11A
VSS
VSS
A5A
VCC
VSS
VSS
A4A A13A
A9A
A7A
VCC
PN0
PN0
A15A
A14A
A12A
RFU
VCCFBD
V
W
Y
PN1
PN2
PN3
VSS
PN1
PN2
PN3
PN4
VSS
VSS
VSS
PN4
SN0
SN1
SN2
VSS
SN0 VCCFBD VSS VCCFBD VSS
RFUa RFUa VCCFBD
VSS
SN8
SN8
VSS
VSS
VSS
SN1
SN0
VSS
SN3
SN3
VSS
SN4
SN4
VSS
SN5
SN6
VSS
SN13 SN12 SN6
SN13 SN12 SN6
SN7
SN7
VSS
SN9 SN10
SN9 SN10
AA
VSS
PN7
VSS
PN8
VSS
VSS
VSS
AB
AC
VSS RESET PN5 PN13
RFUa
PN12
PN6
PN9 VSSAPLL VCCAPLL PN10 PN11
PN9 FBDRES PLLTSTO PN10 PN11
VSS
3
PN5 PN13
RFUa
6
PN12
7
PN6
8
PN7
9
PN8
10
1
2
4
5
11
12
13
14
15
NC= No Connect, RFU= Reserved for Future Use.
Note:
a. These pin positions are reserved for forwarded clocks to be used in future AMB implementations
Rev 1.01 / Sep. 2008
14
1240pin Fully Buffered DDR2 SDRAM DIMMs
Right Side
16
17
TEST
TEST
VSS
18
19
DQ52 DQS15
VSS
20
21
22
DQ49 DQS6
VSS
DQ55 DQ51
23
24
25
26
27
28
29
A
B
C
D
E
F
VDD
VDD
DQS17
CB6
VDD
VDD
VDD
DQ48 DQ38
VDD
DDRC
DQS15 DQ53
VSS
DQS16 DQ63
DQS6 DQ50
VSS DQS7 DQ56
DQ59 DQS7
VSS DQ58 DQ39
VSS DQ37 DQ35
DQS4 DQS4
VSS DQS13 DQS13
VSS
DDRC DQ54
VSS
DQ46 DQS14 VDD
VSS DQS14 DQ47
CB7
VSS
VSS
VSS
DQ36 DQ44
VSS
CB5
DQS16
VSS
DQ61
VSS
NC
DQ57
VSS
DQ33 DQ45
VSS
DQ41
VSS
CB4
VDD
DQ62 DQ60
TEST TEST
VSS
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
SCL
DQS5 DQ43
G
H
J
TESTLO RFU
RFU
VSS
VDD
VSS
VCC
VSS
VCC
VSS
VCC
VSS
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
VSS
DQ34 DQ32
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
SA0
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
SDA
DQS5 DQ40
VSS
VDD
VSS
VCC
VSS
VCC
VSS
VCC
VSS
VDD
VSS
VCC
VSS
VCC
VSS
VCC
VSS
VCC
NC
VSS
VSS
CLK3
CLK1
VSS
DQ42
VSS
NC
RASB
VSS
RFU
VSS
K
L
NC
ODT0B CS1B
CLK3
CLK1
NC
VSS
CS0B
A0B
CASB
VSS
WEB
BA1B
VSS
M
N
P
NC
NC
CKE0B VSS
BA0B BA2B
VSS CKE1B
A2B
A4B
VSS
NC
VSS
A1B
R
T
U
NC
A6B
A10B
VSS
A3B
A7B
PS8
VSS
A5B
PS8
NC
NC
A11B
A8B
A9B
A15B
VSS VCCFBD RFU
A14B
V
W
Y
VCCFBD VSS VCCFBD VSS VCCFBD RFUa
RFUa
SS9
SS9
VSS
VSS
SS5
SS5
VSS
A13B
SS6
A12B
SS7
SA2
SS8
SS8
VSS
SA1
VSS
VSS
PS9
PS7
PS6
PS5
PS9
PS7
PS6
PS5
VSS
VSS
VSS
VSS
SS0
SS0
VSS
SS1
SS1
VSS
SS2
SS2
VSS
SS3
SS3
VSS
SS4
SS4
VSS
SS6
SS7
AA
VSS
VSS
AB
AC
VSS
SN11
VSS
SCK TESTLO PS0
SCK TESTLO PS0
PS1
PS2
PS3
PS4
RFUa VDDSPD VSS
RFU
SN11
VSS
PS1
PS2
PS3
PS4
RFUa
VSS
16
17
18
19
20
21
22
23
24
25
26
27
28
29
NC= No Connect, RFU= Reserved for Future Use.
Note:
a. These pin positions are reserved for forwarded clocks to be used in future AMB implementations
Rev 1.01 / Sep. 2008
15
1240pin Fully Buffered DDR2 SDRAM DIMMs
Advanced Memory Buffer(AMB) DRAM Interface Specifications
Please refer to the AMB Specification for all technical requirements
The following specifications for the AMB constitute the subset which is critical for proper operation of the
DDR2 SDRAM interface.
Note:
This list is not complete, more information will follow in later revisions of this specification.
Critical AMB Specifications
VDDQ =1.8V +/-0.1V
Symbol
Parameter
Type
Units Notes
Min.
Max
245
245
tSU
tH
DQ to DQS / DQS setup time (read)
DQ to DQS / DQS hold time (read)
AMB Data Valid Before DQS
AMB Data Valid After DQS
Input
Input
ps
ps
ps
ps
ps
ps
ps
1
1
1
1
1
1
1
tDVBamb
tDVAamb
tCVBamb
tCVAamb
tDQSCKamb
CIN
Output
Output
Output
Output
Output
470
470
C/A/CNTL Valid Before Clock
C/A/CNTL Valid After Clock
1030
890
DQS/DQS-to-CK/CK output skew
-240
240
2.5
Input Capacitance(DQ/DQS/DQS)
2.0
pF
1
Note 1:
The timing numbers are for example only. Design should be based on the latest component specifications
Rev 1.01 / Sep. 2008
16
1240pin Fully Buffered DDR2 SDRAM DIMMs
Basic Functionality
1. Advanced Memory Buffer Overview
The Advanced Memory Buffer reference design complies with the JEDEC FB-DIMM Architecture and Proto-
col
Specification.
2. Advanced Memory Buffer Functionality
2.1 Advanced Memory Buffer
•
Supports channel initialization procedures as defined in the initialization chapter of the FB-DIMM Archi-
tecture and Protocol Specification to align the clocks and the frame boundaries verify channel connec-
tivity and identify AMB DIMM position.
•
Supports the forwarding of southbound and northbound frames, servicing requests directed to DIMM,
as defined in the protocol chapter, and merging the return data into the northbound frames.
If the AMB resides on the last DIMM in the channel, the AMB initializes northbound frames.
Detects errors on the channel and reports them to the host memory controller.
Acts as DRAM memory buffer for all read, write and configuration accesses addressed to the DIMM.
Provides a read buffer FIFO and a write buffer FIFO.
Supports an SMBus protocol interface for access to the AMB configuration registers.
Provides logic to support MEMBIST and IBIST Design for Test functions.
Provides a register interface for the thermal sensor and status indicator.
•
•
•
•
•
•
•
•
Functions as a repeater to extend the maximum length of FBD Links.
2.2 Transparent Mode for DRAM Test Support
In this mode, the Advanced Memory Buffer will provide lower speed tester access to DRAM pins through
the FB-DIMM I/O pins. This allows the tester to send and arbitrary test pattern to the DRAMs. Transparent
mode only supports a maximum DRAM frequency equivalent to DDR2 400.
Transparent mode functionality:
•
Reconfigure FB-DIMM inputs from differential high speed link receivers to two single ended lower
speed receivers(~200 Mhz)
•
•
These inputs directly control DDR2 Command/Address and input data that is replicated to all DRAMs
Used low speed direct drive FB-DIMM outputs to bypass high speed Parallel/Serial circuitry and provide
test results back to tester
2.3 DDR2 SDRAM
•
•
•
Supports DDR2 at speeds of 533,667 and 800 MT/s
Supports 512Mb devices in x4 and x8 configurations
72 bit DDR2 SDRAM memory array
Rev 1.01 / Sep. 2008
17
1240pin Fully Buffered DDR2 SDRAM DIMMs
3. Advanced Memory Buffer Block Diagram
10x2
10x2
South bound
Data in
South bound
Data out
Data Merge
PISO
Re-Time
Re-synch
PLL
1x2
Demux
I0*12
Ref Clock
I0*12
MUX
Reset#
Link init SM &
Control & CSRs
Reset
Control
Init
patterns
IBIST - RX
IBIST - RX
4
4
DRAMclock
Command
Decoder &
CRC Check
Failover
DRAMclock#
DRAM Cmd
Cmd
Out
DRAM Address
/CommandCopy1
LAI Logic
29
29
DDR State
Controller
& CSRs
Thermal
Sensor
DRAM Address
/CommandCopy2
36 Deep
Write
Data
Data
Out
DDR
Core Control
& CSRs
FIFO
IO’s
External MEMBIST
DDR Calibration &
DDR IOBIST/DFX
DRAM Address
Data/Strobe
72+18X2
Data In
Data CRC Gen
& Read FIFO
LAI
Controller
NB LAI
Buffer
Sync & Idle
Pattern Generator
IBIST - TX
IBISt - RX
MUX
SMbus
Link init SM &
Control & CSRs
SMbus
Controller
Failover
14*6*2
14*12
Demux
PISO
Re-synch
Re-Time
Data Merge
Northbound
DataOut
Northbound
DataIn
14x2
14x2
Advanced Memory Buffer Block Diagram
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1240pin Fully Buffered DDR2 SDRAM DIMMs
4. Interfaces
Below Figure illustrates the AMB and all of its interfaces.They consists of two FB-DIMM links, one DDR2 channel and
an SMBus interface. Each FB-DIMM link connects the AMB to a host memory controller or an adjacent FB-DIMM.
The DDR2 channel supports direct connection to the DDR2 SDRAMs on a Fully Buffered DIMM.
Memory Interface
DDR2
Channel
SB FBD
In Link
SB FBD
Out Link
AM B
NB FBD
Out Link
NB FBD
In Link
SMBus
Advanced M em ory Buffer Interfaces
4.1 FBD High-Speed Differential Point-to-Point Link (at 1.5V) Interfaces
The Advanced Memory Buffer supports one FBD channel consisting of two bidirectional link interfaces
using high speed differential point-to-point electrical signaling.
The southbound input link is 10 lanes wid and carries commands and write data from the host memory
controller or the adjacent DIMM in the host direction. The southbound output link forwards this same data
to the next FBD.
The northbound input link is 13 to 14 lanes wide and carries read return data or status information from
the next FB-DIMM in the chain back towards the host. The northbound output link forwards this informa-
tion back towards the host and multiplexes in any read return data or status information that is generated
internally.
4.2 DDR2 Channel
The DDR2 channel on the Advanced Memory Buffer supports direct connection to DDR2 SDRAMs. The
DDR2 channel supports two ranks of eight banks with 16 row/column request, 64 data signals, and eight
check-bit signals.
There are two copies of address and command signals to support DIMM routing and electrical require-
ments.
Four transfer bursts are driven on the data and check-bit lines at 800 MHz. Propagation delays between
read data/check-bit strobe lanes on a given channel can differ. Each strobe can be calibrated by hardware
state machines using write/read trial and error. Hardware aligns the read data and check-bits to a single
core clock. The Advanced Memory Buffer provides four copies of the command clock phase refer-
ences(CLK[3:0]) and write data/check-bit strobes(DQSs) for each DRAM nibble.
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1240pin Fully Buffered DDR2 SDRAM DIMMs
4.3 SMBus Slave Interface
The Advanced Memory Buffer supports an SMBus interface to allow system access to configuration regis-
ters independent of the FB-DIMM link. The Advanced Memory Buffer will never be a master on the SMBus,
only a slave. Serial SMBus data transfer is supported at 100 kHz. SMBus access to the Advanced Memory
Buffer may be a requirement to boot and to set link strength, frequency and other parameters needed to
insure robust configurations. It is also required for diagnostic support when the link is down. The SMBus
address straps located on the DIMM connector are used by the unique ID.
4.4 FBD Channel Latency
FB-DIMM channel latency is measured from the time a read request is driven on the FB-DIMM channel pins
to the time when the first 16 bytes (2nd chunk) of read completion data is sampled by the memory con-
troller. When not using the Variable Read Latency capability, the latency for a specific DIMM on a channel
is always equal to the latency for any other DIMM on that channel. However, the latency for each DIMM in
a specific configuration with some number of DIMMs installed. As more DIMMs are added to the channel,
additional latency is required to read from each DIMM on the channel. Because the channel is based on
the point to point interconnection of buffer components between DIMMs, memory requests are required to
travel through N-1 buffers before reaching the Nth buffer. The result is that a 4 DIMM channel configura-
tion will have greater idle read latency compared to a 1DIMM channel configuration.The Variable Read
Latency capability can be used to reduce latency for DIMMs closer to the host. The idle latencies listed in
this section are representative of what might be achieved in typical AMB designs. Actual implementations
with latencies less than the values listed will have higher application performance and vice versa.
4.5 Peak Theoretical Throughput
An FB-DIMM channel transfers read completion data on the FBD Northbound data connection. 144 bits of data are
transferred for every FBD Northbound data frame. This matches the 18-byte data transfer of an ECC DDR DRAM in a
single DRAM command clock. A DRAM burst of 8 from a single channel or a DRAM burst of four from two lock stepped
channels provides a total of 72 bytes of data(64 bytes plus 8 bytes ECC)
The FBD frame rate matches the DRAM command clock because of the fixed 6:1 ratio of the FBD channel clock to the
DRAM command clock. Therefore, the Northbound data connection will exhibit the same peak theoretical throughput
as a single DRAM channel. For example, when using DDR2 533 DRAMs, the peak theoretical throughput as a single
DRAM channel.For example, when using DDR2 533 DRAMs, the peak theoretical bandwidth of the Northbound data
connection is 4.276 GB/sec.
Write data is transferred on the FBD Southbound command and data connection, via Command+Wdata frames. 72
bits of data are transferred for every FBD Command+Wdata frame. Two Command+Wdata frames match the 18-byte
data transfer of and ECC DDR DRAM in a single DRAM command clock. A DRAM burst of 8 transfers from a single
channel, or a burst of 4 from two lock-step channels provides a total of 72 bytes of data(64 bytes plus & bytes ECC)
When the FBD frame rate matches the DRAM command clock, the Southbound command and data connection will
exhibit one half the peak theoretical throughput of a single DRAM channel. For example, when using DDR2 533
DRAMs, the peak theoretical bandwidth of the Southbound command and data connection is 2.133 GB/sec.
The total peak theoretical throughput for a single FBD channel is defined as the sum of the peak theoretical through-
put of the Northbound data connection and the Southbound command and data connection. When the FBD frame rate
matches the DRAM command clock, this is equal to 1.5 times the peak theoretical throughput of a single DRAM chan-
nel. For example, when using DDR2 533 DRAMs, the peak theoretical throughput of a DDR2 533 channel would be
4.267 GB/sec, while the peak theoretical throughput of and FBD -/+533 channel would be 6.4 GB/sec.
Rev 1.01 / Sep. 2008
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1240pin Fully Buffered DDR2 SDRAM DIMMs
5 Hot-add
The FB-DIMM channel does not provide a mechanism to automatically detect and report the addition of a
new DIMM south of the currently active last DIMM. It is assumed the system will be notified through some
means of the addition of one or more new DIMMs so that specific commands can be sent to the host con-
troller to initialize the newly added DIMM(s) and perform a Hot-add Reset to bring them into the channel
timing domain. It should be noted that the power to the DIMM socket must be removed before a “hot-add”
DIMM is inserted or removed. Applying or removing the power to a DIMM socket is a system platform
function.
6 Hot-remove
In order to accomplish removal of DIMMs the host must perform a Fast Reset sequence targeted at the last
DIMM that will be retained on the channel. The Fast Reset re-establish the appropriate last DIMM so that
the Southbound
Tx outputs of the last DIMM and the Southbound and Northbound outputs of the DIMMs beyond the last
active DIMM are disabled. Once the appropriate outputs are disabled the system can coordinate the proce-
dure to remove power in preparation for physical removal of the DIMM if needed.
It should be noted that the power to the DIMM socket must be removed before a “hot-add” DIMM is
inserted or removed. Applying or removing the power to a DIMM socket is a system platform function.
7 Hot-replace
Hot replace of DIMM is accomplished through combing th Hot-Remove and Hot-Add process.
Rev 1.01 / Sep. 2008
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1240pin Fully Buffered DDR2 SDRAM DIMMs
Electrical Characteristics
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
VIN, VOUT
VCC
Value
Unit
V
Note
- 0.3 V ~ 1.75 V
- 0.3 V ~ 1.75 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
1
1
1
1
1
Voltage on any pins relative to Vss
Voltage on VCC relative to Vss
V
VDD
V
Voltage on VDD relative to Vss
Voltage on VTT relative to Vss
Storage Temperature range
VTT
V
- 55 oC ~ 100 oC
oC
TSTG
Note:
1. Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device
functional operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
OPERATING TEMPERATURE RANGE
Parameter
Symbol
TCASE
Rating
Units
Notes
0 ~ + 110
oC
AMB Component Case temperature Range
DRAM Component Case Temperature Range
0 ~ + 95
oC
1,2
TCASE
Note:
1. Within the DRAM component Case Temperature range all DRAM specification will be supported.
2. If the DRAM case temperature is Above 85oC, the Auto-Refresh command interval has to be reduced from 7.8us of
tREFI to 3.9us.
Supply Voltage Levels and DC Operating Conditions.
Parameter
AMB Supply Voltage
DRAM Supply Voltage
Symbol
VCC
Min
Nom
Max
Unit
V
Note
1.455
1.7
1.5
1.8
1.575
1.9
VDD
V
0.48 x VDD
0.50 x VDD
0.52 x VDD
VTT
V
Termination Voltage
VDDSPD
VIH(DC)
VIL(DC)
VIH(DC)
VIL(DC)
EEPROM Supply Voltage
3.0
2.1
-
3.3
3.6
V
VDDSPD
DC Input Logic High(SPD)
DC Input Logic Low(SPD)
DC Input Logic High(RESET)
-
-
-
V
1
1
2
0.8
-
V
1.0
V
DC Input Logic Low(RESET)
Leakage Current (RESET)
Leakage Current (Link)
-
-
-
-
+0.5
+90
+5
V
2
2
3
IL
IL
-90
-5
uA
uA
Note:
1. Applies for SMB and SPD bus Signals.
2. Applies for AMB CMOS Signal RESET.
3. for all other AMB related DC parameters, please refer to the High Speed Differential Link Interface Specifications
Rev 1.01 / Sep. 2008
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1240pin Fully Buffered DDR2 SDRAM DIMMs
Timing Parameters
Parameter
Symbol
Min
Typ
Max
Unit
Note
EI Assertion Pass-Thru Timing
EI Deassertion Pass-Thru Timing
EI Assertion Duration
tEI Propagad
tEID
-
4
clks
clks
-
-
bit lock
tEI
100
clks
1
1
1
Bit Lock Interval
tBitLock
tFrameLock
119
154
frames
frames
Frame Lock Interval
Note:
1. Defined in FB-DIMM Architecture and Protocol Spec.
Environmental Parameters
Symbol
TOPR
Parameter
Operating temperature
Rating
Units
Notes
1
2
2
2
2
2
See Note
10 to 90
-50 to +100
5 to 95
HOPR
TSTG
Operating humidity(relative)
Storage temperature
%
oC
%
m
HSTG
PBAR
Storage humidity(without condensation)
Barometric pressure(operating)
Barometric pressure (storage)
3050
PBAR
15240
m
Note:
1. The designer must meet the case temperature specifications for individual module components.
2. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and
device functional operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating
conditions for extended periods
Rev 1.01 / Sep. 2008
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1240pin Fully Buffered DDR2 SDRAM DIMMs
IDD Specification and Conditions
I
Measurement Conditions
DD
Symbol
Conditions
Idle Current, single or last DIMML0 state, idle (0 BW)Primary channel enabled, Sec-
ondary Channel Disabled CKE high. Command and address lines stable. DRAM clock
active.
Idle_0
Idle Current, first DIMML0 state, idle (0 BW)Primary and Secondary channels
enabled CKE high. Command and address lines stable. DRAM clock active.
Idle_1
Idle Current, DRAM power downL0 state, idle (0 BW)Primary and Secondary chan-
nels enabledCKE low. Command and address lines floated. DRAM clock active, ODT
and CKE driven low.
Idle_2
Active PowerL0 state. 50% DRAM BW, 67% read, 33% write.
Primary and Secondary channels enabled. DRAM clock active, CKE high.
Active_1
Active_2
Active Power, data pass throughL0 state. 50% DRAM BW to downstream DIMM,
67% read, 33% write. Primary and Secondary channels enabled CKE high.
Command and address lines stable. DRAM clock active.
Channel Standby Average power over 42 frames where the channel enters and exits
L0sDRAMs Idle (0 BW). CKE low. Command and address lines floated.
Dram clocks active, ODE and CKE driven low.
L0s
Training
(for AMB spec, not in
SPD)
Training Primary and Secondary channels enabled.100% toggle on all channels
lanes.DRAMs idle (0 BW).CKE high. Command and address lines stable.DRAM clock
active.
Rev 1.01 / Sep. 2008
24
1240pin Fully Buffered DDR2 SDRAM DIMMs
IDD Power Supply Currents Specifications.
SAC Timing Parameters by Speed Grade
Power Supply
Icc_Idle_0 @1.5V
Idd_Idle_0 @1.8V
Idle_0 Total Power
Icc_Idle_1 @1.5V
Idd_Idle_1 @1.8V
Idle_1 Total Power
Icc_Idle_2 @1.5V
Idd_Idle_2 @1.8V
Idle_2 Total Power
Icc_Active_1 @1.5V
Idd_Active_1 @1.8V
Active_1 Total Power
Icc_Active_2 @1.5V
Idd_Active_2 @1.8V
Active_2 Total Power
Icc_L0s @1.5V
Max.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Unit
mA
mA
W
Note1)
mA
mA
W
mA
mA
W
mA
mA
W
mA
mA
W
mA
mA
W
Idd_L0s @1.8V
L0s Total Power
Icc_Training @1.5V
Idd_Training @1.8V
Training Total Power
mA
mA
W
Note:
1) Assure that Primary channel Drive strength at 100% with De-emphasis at -6.5dB Secondary channel drive strength
at 60% with De-emphasis at -3dB when enabled. Address and Data fields are pseudo-random, which provides a 50%
toggle rate on DRAM data lines and link lanes when data is being transferred.
Assuming 1 activate command and 1 read/write command per BL=4 transferBL=4.10 lanes southbound and 14 lanes
northbound are enabled and active (12 lanes NB if non-ECC DIMM).
SPD specific assumption:Number of devices on the specific DIMM assumed.Termination of command, address, and
control is actual value used on the DIMM. ECC or non-ECC as per the specific DIMM.
SPD specifies Delta TAMB power spec specific assumptions: Dual rank x8 ECC DIMM assumed (18 DRAM devices
present on DIMM)
Modeled with 27 ohm termination for command, address, and clocks, and 47 ohm termination for control.
ECC DIMM assumed (72 bit data, 14 lanes northbound). AMB specification specifies current for each rail.
Rev 1.01 / Sep. 2008
25
1240pin Fully Buffered DDR2 SDRAM DIMMs
Termination Current
Internal signals are terminated on the DIMM through resistors to an external power supply VTT = VDD / 2.
Modeled with 30 Ohm termination for clocks, 39 ohm for command / address and 47 ohm for control.
The VTT power supply must be able to source and sink these currents:
VTT Currents table
Description
Symbol
Typ
Max
700
700
Unit
mA
ITT1
Idle Current, DRAM Power Down (Conditions TBD)
Active Power, 50% DRAM BW (conditions TBD)
-
-
ITT2
mA
Rev 1.01 / Sep. 2008
26
1240pin Fully Buffered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
128Mx72, 1GB Module (1 rank of x8 based DDR2 SDRAMs)
HYMP112F72CP8(N3,D3,D5)
FRONT VIEW
133.35 ±0.15
30.35
AMB
67.00
51.00
5.00
BACK VIEW
Chekbit
FRONT VIEW WITH HEAT SPREADER
Side
8.20 max
5.20 max
BACK VIEW WITH HEAT SPREADER
3.0 max
1.27±0.10
Note 1: All dimensions are typical millimeter scale unless otherwise stated.
Rev 1.01 / Sep. 2008
27
1240pin Fully Buffered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
256Mx72, 2GB Module (2 ranks of x8 based DDR2 SDRAMs)
HYMP125F72CP8(N3,D3,D5)
FRONT VIEW
133.35 ±0.15
AMB
67.00
51.00
5.00
BACK VIEW
Chekbit
Chekbit
FRONT VIEW WITH HEAT SPREADER
Side
8.20 max
5.20 max
BACK VIEW WITH HEAT SPREADER
3.0 max
1.27±0.10
Note 1: All dimensions are typical millimeter scale unless otherwise stated.
Rev 1.01 / Sep. 2008
28
1240pin Fully Buffered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
512Mx72, 4GB Module (2 ranks of x4 based DDR2 SDRAMs)
HYMP151F72CP4(N3,D3,D5)
FRONT VIEW
133.35 ±0.15
67.00
51.00
5.00
BACK VIEW
FRONT VIEW WITH HEAT SPREADER
Side
8.20 max
5.20 max
BACK VIEW WITH HEAT SPREADER
3.0 max
1.27±0.10
Note 1: All dimensions are typical millimeter scale unless otherwise stated.
Rev 1.01 / Sep. 2008
29
1240pin Fully Buffered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
512Mx72, 4GB Module (4 ranks of x8 based DDR2 SDRAMs)
HYMP151F72CP8D5
FRONT VIEW
133.35 ±0.15
67.00
51.00
5.00
BACK VIEW
FRONT VIEW WITH HEAT SPREADER
Side
8.20 max
5.20 max
BACK VIEW WITH HEAT SPREADER
3.0 max
1.27±0.10
Note 1: All dimensions are typical millimeter scale unless otherwise stated.
Rev 1.01 / Sep. 2008
30
1240pin Fully Buffered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
1Gx72, 8GB Module (4 ranks of x4 based DDR2 SDRAMs)
HYMP31GF72CMP4D5
FRONT VIEW
133.35 ±0.15
67.00
51.00
5.00
BACK VIEW
FRONT VIEW WITH HEAT SPREADER
Side
8.20 max
5.20 max
BACK VIEW WITH HEAT SPREADER
3.0 max
1.27±0.10
Note 1: All dimensions are typical millimeter scale unless otherwise stated.
Rev 1.01 / Sep. 2008
31
1240pin Fully Buffered DDR2 SDRAM DIMMs
REVISION HISTORY
Revision
History
Date
Remark
0.1
1.0
First Version Release
July. 2007
July. 2008
Sep. 2008
AMB Revision Added & Datasheet Version changed
Typo corrected
1.01
Rev 1.01 / Sep. 2008
32
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