HY125N10T [HY]
100V / 125A N-Channel Enhancement Mode MOSFET; 100V / 125A N沟道增强型MOSFET
| 型号： | HY125N10T |
| 厂家： | 
HY ELECTRONIC CORP. |
| 描述： | 100V / 125A N-Channel Enhancement Mode MOSFET |
| 文件： | 总4页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY125N10T
100V / 125A
N-Channel Enhancement Mode MOSFET
100V, RDS(ON)=5.8mW@VGS=10V, ID=40A
Features
• Low On-State Resistance
TO-220AB
• Excellent Gate Charge x RDS(ON) Product ( FOM )
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for DC-DC Converter, Off-line UPS,
Automotive System, Solenoid and Motor Control
• In compliance with EU RoHs 2002/95/EC Directives
Drain
2
Mechanical Information
1
• Case: TO-220AB Molded Plastic
Gate
• Terminals : Solderable per MIL-STD-750,Method 2026
3
Source
3
2
1
Marking & Ordering Information
TYPE
MARKING
PACKAGE
PACKING
HY125N10T
125N10T
TO-220AB
50PCS/TUBE
Absolute Maximum Ratings (TC=25°C unless otherwise specified )
Parameter
Value
100
Units
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
V
V
A
A
VGS
ID
+20
Continuous Drain Current 1)
Pulsed Drain Current 1)
TC=25℃
TC=25℃
120
IDM
480
Maximum Power Dissipation
Derating Factor
192
1.28
PD
W
EAS
Avalanche Energy with Single Pulse, L=0.3mH
1250
mJ
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to +175
℃
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
Parameter
Symbol
RqJC
Value
0.78
Units
℃/W
℃/W
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
RqJA
62.5
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PAGE.1
REV.1, 8-May-2012
HY125N10T
Electrical Characteristics ( TC=25, Unless otherwise noted )
Parameter
Test Condition
Symbol
Min.
Typ.
Max.
Units
Static
BVDSS
VGS(th)
RDS(ON)
IDSS
VGS=0V、ID=250uA
VDS=VGS、ID=250uA
VGS=10V、ID=80A
VDS=80V、VGS=0V
VGS=+20V、VDS=0V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
V
100
-
3
-
4
2
-
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate Body Leakage Current
4.6
-
5.8
1
mW
uA
nA
-
IGSS
-
-
100
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Qg
Qgs
Qgd
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
178
32
VDS=50V，ID=40A
nC
ns
VGS=10V
45
31.8
19.2
76
VDD=50V，ID=40A
VGS=10V，RG=3.6W
td(off)
tf
52
Ciss
Coss
Crss
Rg
9200
680
320
1.3
VDS=30V，VGS=0V
pF
f=1.0MHZ
W
Source-Drain Diode
Max. Diode Forwad Voltage
Diode Forward Voltage
IS
VSD
trr
-
A
V
-
-
-
-
-
120
IS=80A、VGS=0V
0.86
72
1.4
Reverse Recovery Time
Reverse Recovery Charge
ns
uC
-
-
VGS=0V、IS=40A
di/dt=100A/us
Qrr
210
NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2%
PAGE.2
REV.1, 8-May-2012
HY125N10T
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)
200
160
120
80
8
7
6
5
4
3
VGS=10V
VGS= 10V~ 8.0V
7.0V
6.0V
5.0V
40
0
0
5
10
15
20
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Fig.1 Output Characteristric
Fig.2 On-Resistance vs Drain Current
2.2
2
20
16
12
8
VGS =10 V
ID =80A
ID =80A
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
4
0
-50 -25
0
25 50 75 100 125 150 175
5
6
7
8
9
10
TJ - Junction Temperature (oC)
VGS - Gate-to-Source Voltage (V)
Fig.3 On-Resistance vs Gate to Source Voltage
Fig.4 On-Resistance vs Junction Temperature
12000
12
f = 1MHz
VDS=50V
ID =40A
VGS = 0V
10000
10
Ciss
8000
8
6
4
2
0
6000
4000
Coss
2000
Crss
0
0
40
80
120
160
200
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Qg - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
Fig.5 Capacitance Characteristic
PAGE.3
REV.1, 8-May-2012
HY125N10T
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)
1.2
1.1
1
200
160
120
80
ID = 250mA
0.9
0.8
40
0
-50 -25
0
25 50 75 100 125 150 175
0
25
50
75
100 125 150 175
TJ - Junction Temperature (oC)
TJ - Junction Temperature (oC)
Fig.8 Breakdown Voltage vs Junction Temperature
Fig.7 Power Derating Curve
1000
100
10
VGS = 0V
TJ = 125oC
25oC
1
-55oC
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
Fig.9 Body Diode Forward Voltage Characteristic
PAGE.4
REV.1, 8-May-2012
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