HY13N50T [HY]
500V / 13A N-Channel Enhancement Mode MOSFET; 500V / 13A N沟道增强型MOSFET
| 型号： | HY13N50T |
| 厂家： | 
HY ELECTRONIC CORP. |
| 描述： | 500V / 13A N-Channel Enhancement Mode MOSFET |
| 文件： | 总4页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY13N50T / HY13N50FT
500V / 13A
N-Channel Enhancement Mode MOSFET
500V, RDS(ON)=0.52W@VGS=10V, ID=6.5A
Features
• Low On-State Resistance
TO-220AB
ITO-220AB
• Fast Switching
• Low Gate Charge & Low CRSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
1
1
2
2
3
3
Mechanical Information
• Case: TO-220AB / ITO-220AB Molded Plastic
Drain
2
• Terminals : Solderable per MIL-STD-750,Method 2026
Marking & Ordering Information
1
TYPE
MARKING
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
HY13N50T
HY13N50FT
13N50T
Source
3
13N50FT
Absolute Maximum Ratings (TC=25°C unless otherwise specified )
Parameter
Symbol
VDS
HY13N50T
HY13N50FT
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
A
500
+30
VGS
ID
Continuous Drain Current
Pulsed Drain Current 1)
TC=25℃
TC=25℃
13
52
13
52
IDM
A
183
1.47
52
0.42
Maximum Power Dissipation
Derating Factor
PD
W
Avalanche Energy with Single Pulse
IAS=13A, VDD=140V, L=7.5mH
EAS
mJ
633
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
℃
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Symbol
HY13N50T
HY13N50FT
Units
℃/W
RqJC
RqJA
0.68
50
2.4
110
℃/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PAGE.1
REV 1.0, 24-Sept-2012
HY13N50T / HY13N50FT
Electrical Characteristics ( TC=25℃, Unless otherwise noted )
Paramter
Test Condition
Symbol
Min.
Typ.
Max.
Units
Static
BVDSS
VGS(th)
RDS(ON)
IDSS
VGS=0V、ID=250uA
VDS=VGS、ID=250uA
VGS=10V、ID=6.5A
VDS=500V、VGS=0V
VGS=+30V、VDS=0V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate Body Leakage Current
Dynamic
500
-
-
V
V
2.0
-
4.0
-
-
-
0.44
0.52
10
W
-
-
uA
nA
IGSS
+100
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
-
-
-
-
-
-
-
-
-
-
25.2
6.8
32
-
VDS=400V，ID=13A
nC
ns
Gate-Source Charge
VGS=10V
Gate-Drain Charge
7.6
-
Turn-On Delay Time
26.8
32
32
42
82
28
-
Turn-On Rise Time
VDD=250V，ID=13A
VGS=10V，RG=25W
td(off)
tf
Turn-Off Delay Time
68
Turn-Off Fall Time
22.6
1450
190
6.5
Ciss
Coss
Crss
Input Capacitance
VDS=25V，VGS=0V
pF
Output Capacitance
-
f=1.0MHZ
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forwad Voltage
Max. Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
IS
ISM
VSD
trr
-
-
-
-
-
-
-
-
13
52
1.4
-
A
A
-
IS=13A、VGS=0V
-
V
450
4.5
ns
uC
VGS=0V、IS=13A
di/dt=100A/us
Qrr
-
NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2%
PAGE.2
REV 1.0, 24-Sept-2012
HY13N50T / HY13N50FT
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)
100
10
1
25
20
15
10
5
VDS =50V
VGS= 20V~ 7.0V
6.0V
25oC
TJ = 125oC
5.5V
5.0V
-55oC
0
0.1
0
10
20
30
40
50
1
2
3
4
5
6
7
8
9
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
1.5
1.2
0.9
0.6
0.3
0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
ID =6.5A
VGS=10V
VGS = 20V
4
5
6
7
8
9
10
0
4
8
12
16
20
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Fig.3 On-Resistance vs Drain Current
Fig.4 On-Resistance vs Gate to Source Voltage
3000
2500
2000
1500
1000
500
12
f = 1MHz
VGS = 0V
ID =13A
V
DS=400V
10
8
V
DS=250V
V
DS=100V
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
Qg - Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
Fig.6 Gate Charge Characteristic
PAGE.3
REV 1.0, 24-Sept-2012
HY13N50T / HY13N50FT
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)
1.2
1.1
1
2.5
2
ID = 250mA
VGS =10 V
ID =6.5A
1.5
1
0.9
0.8
0.5
0
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ - Junction Temperature (oC)
TJ - Junction Temperature (oC)
Fig.7 On-Resistance vs Junction Temperature
Fig.8 Breakdown Voltage vs Junction Temperature
100
VGS = 0V
10
TJ = 125oC
25oC
1
-55oC
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
VSD - Source-to-Drain Voltage (V)
Fig.9 Body Diode Forward Voltage Characteristic
PAGE.4
REV 1.0, 24-Sept-2012
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