KBU808 [HY]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器
KBU808
型号: KBU808
厂家: HY ELECTRONIC CORP.    HY ELECTRONIC CORP.
描述:

SILICON BRIDGE RECTIFIERS
硅桥式整流器

整流二极管 桥式整流二极管
文件: 总2页 (文件大小:50K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KBU 4A/6A/8A SERIES  
REVERSE VOLTAGE - 50 to 1000Volts  
FORWARD CURRENT - 4 / 6 / 8 Amperes  
SILICON BRIDGE RECTIFIERS  
KBU  
FEATURES  
Surge overload rating -150~200 amperes peak  
.15 X23L  
Ø
(3.8 X5.7L)  
Ø
HOLE THRU  
.935(23.7)  
.895(22.7)  
Ideal for printed circuit board  
Reliable low cost construction utilizing  
molded plastic technique  
300  
(7.5)  
.700(17.8)  
.600(16.8)  
.780(19.8)  
.740(18.8)  
Plastic material has UL  
Mounting postition:Any  
Mounting torgue:5 In.Ib.Max  
1.00  
MIN.  
(25.4)  
.052(1.3)DIA.  
.048(1.2)TYP.  
.087(2.2)  
.220(5.6)  
.071(1.8)  
.180(4.6)  
.276(7.0)  
.256(6.5)  
Dimensions in inches and (milimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
KBU4005 KBU401  
KBU6005 KBU601  
KBU8005 KBU801  
KBU402  
KBU602  
KBU802  
200  
KBU404  
KBU604  
KBU804  
40  
KBU406  
KBU606  
KBU806  
600  
KBU408  
KBU608  
KBU808  
800  
KBU410  
KBU610  
KBU810  
1000  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
V
V
V
140  
280  
420  
560  
700  
Maximum DC Blocking Voltage  
100  
200  
40  
600  
800  
1000  
Maximum Average Forward  
Rectified Output Current at  
TC=100  
A
A
4.0  
150  
1.0  
6.0  
175  
1.0  
8.0  
200  
1.1  
Peak Forward Surage Current 8.3ms single  
Half Sine-Wave Super Imposed on Rated Load  
(JEDEC Method)  
A
KBU4  
KBU6  
KBU8  
Maximum Instantanous Forward Voltage Drop  
per Element at 4.0A/3.0A/4.0A  
mV  
10  
Maximum Reverse Leakage at rated TA=25℃  
10  
10  
μA  
200  
DC Blocking Voltage Per Element  
TA=100℃  
100  
300  
mA  
-55 to +125  
Operating and Storage Temperature Range TJ.TSTG  
~ 253 ~  
RATING AND CHARACTERTIC CURVES  
KBU4A/6A/8A SERIES  
FIG.2 TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTIC  
FIG.1-DERATING CURVE FOR  
OUTPUT RECTIFIED CURRENT  
100  
40  
8.0  
KBU8  
KBU6/8  
7.0  
HEAT SINK  
MOUNTING  
20  
10  
KBU6  
KBU4  
6.0  
5.0  
4.0  
KBU4  
4.0  
3.0  
TJ=25℃  
PULSE WIDTH=300S  
1%DUTY CYCLE  
1.0  
0.4  
MOUNTED ON4*4 INCH  
2.0  
COPPER PC BOARD.TA  
.51(1.27mm)LEAD LENGTH  
1.0  
0.2  
0.1  
50  
100  
150  
0
1.2  
1.3  
1.1  
1.0  
0.6  
0.7  
0.8  
0.9  
CASE TEMPERATURE,  
INSTANTANEOUS FORWARD VOLTAGEVOLTS  
FIG.4-TYPICAL REVERSE  
CHARACTERISTICS  
FIG.3-MAXIMUM NON-RETETITIVE PEAK  
FORWARD SURGE CURRENT  
10  
1.0  
0.1  
250  
200  
150  
100  
TC=100℃  
KBU8  
KBU6  
KBU4  
50  
0
TA=25℃  
40  
60  
80  
100 120 140  
100  
0
20  
10  
1
PERCENT OF RATED PEAK REVERSE  
NUMBER OF CYCLES AT 60HZ  
FIG.5-TYPICAL JUNCTION CAPACITANCE PER ELEMENT  
400  
250  
TJ=25℃  
KBU6  
200  
150  
KBU4  
TJ=25℃  
100  
50  
KBU8  
100  
50  
10  
0.1  
10  
REVERSE VOLTAGE,VOLTS  
1.0  
100  
100  
1
5
10  
50  
REVERSE VOLTAGE ,VOLTS  
~ 254 ~  

相关型号:

KBU808-G

Silicon Bridge Rectifiers
COMCHIP

KBU808-LF

Bridge Rectifier Diode, 1 Phase, 8A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBU, 4 PIN
WTE

KBU808G

SINGLE PHASE 8.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS
GOOD-ARK

KBU808G

8.0A GLASS PASSIVATED BRIDGE RECTIFIER
WTE

KBU808G

GLASS PASSIVATED BRIDGE RECTIFIERS
HY

KBU808G

Voltage 50V ~ 1000V 8.0Amp Glass Passivited Bridge Rectifiers
SECOS

KBU808G-G

Glass Passivated Bridge Rectifier
COMCHIP

KBU808G-LF

Bridge Rectifier Diode, 1 Phase, 8A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBU, 4 PIN
WTE

KBU810

SINGLE PHASE 8.0 AMPS. SILICON BRIDGE RECTIFIERS
GOOD-ARK

KBU810

8 AMP SILICON BRIDGE RECTIFIER
FUJI

KBU810

8.0A BRIDGE RECTIFIER
WTE

KBU810

8.0 Amp SINGLE PHASE SILICON BRIDGE
FCI