S10P45 [HY]

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS; 表面贴装肖特基二极管
S10P45
型号: S10P45
厂家: HY ELECTRONIC CORP.    HY ELECTRONIC CORP.
描述:

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
表面贴装肖特基二极管

肖特基二极管
文件: 总2页 (文件大小:102K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
S10P45  
SURFACE MOUNT  
SCHOTTKY BARRIER RECTIFIERS  
REVERSE VOLTAGE - 45Volts  
FORWARD CURRENT - 10.0 Amperes  
TO-277A  
FEATURES  
Very low profile - typical height of 1.1 mm  
.258(6.55)  
.246(6.25)  
.240(6.1)  
Ideal for automated placement  
.232(5.9)  
Trench Schottky technology  
Low forward voltage drop, low power losses  
High efficiency operation  
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C  
Compliant to RoHS Directive 2002/95/EC and in accordance to  
WEEE 2002/96/EC  
.084  
NOM.  
(2.13)  
MECHANICAL DATA  
Case: TO-277A (SMPC)  
Molding compound meets UL 94 V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
.047(1.2)  
.039(1.0)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
S10P45  
45  
SYMBOL  
UNIT  
V
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
VRRM  
IF(1)  
10  
Maximum DC Forward Current  
A
A
IF(2)  
4.4  
Peak Forward Surge Current 10ms Single Half Sine-Wave  
Superimposed on Rated Load  
180  
IFSM  
0.42(TYP.)  
IF=5.0A  
TA=25℃  
0.48(TYP.)  
0.57 (MAX.)  
IF=10A  
Instantaneous Forward voltage  
IF=5.0A  
VF(3)  
V
0.34(TYP.)  
TA=125℃  
0.41 (TYP.)  
21 (TYP.)  
9 (TYP.)  
0.50 (MAX.)  
800 (MAX.)  
35 (MAX.)  
IF=10A  
μA  
TA=25℃  
Reverse Current  
VR=45V  
IR(4)  
mA  
TA=125℃  
(5)  
75  
RθJA  
RθJM  
TJ  
Typical Thermal Resistance  
/W  
(6)  
4
Operating Temperature Range  
Storage Temperature Range  
-40 to +150  
-40 to +150  
TSTG  
Notes:(1) Mounted on 30 mm x 30 mm pad areas aluminum PCB  
(2) Free air, mounted on recommended copper pad area  
(3)Pulse test: 300 μs pulse width, 1 % duty cycle  
(4) Pulse test: Pulse width 40 ms  
(5) Free air, mounted on recommended copper pad area; thermal resistance RθJA - junction to ambient  
(6) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance RθJM - junction to mount  
REV. 3, 06-Arp-2012  
RATING AND CHARACTERTIC CURVES  
S10P45  
FIG.1-TYPICAL TRANSIENT THERMAL IMPEDANCE  
100  
FIG.2-TYPICAL REVERSE LEAKAGE  
CHARACTERISTICS  
10  
Junction to Ambient  
TA=150℃  
TA=125℃  
TA=100℃  
10  
10  
1
0.1  
TA=25℃  
1
0.01  
0.01  
1
10  
0.1  
10  
0.001  
t - PULSE DURATION (S)  
20  
30  
40  
50  
60  
70  
80  
90  
100  
PERCENT OF RATED PEAK REVERSE  
VOLTAGE(%)  
FIG.4-TYPICAL JUNCTION CAPACITANCE  
FIG.3-FORWARD POWER LOSS  
CHARACTERISTICS  
10000  
7
6
5
D=0.5 D=0.8  
D=0.  
D=0.2  
4
D=0.1  
D=1.0  
1000  
3
2
TJ=25f=1MHZ  
Vsig=50maV p-p  
1
0
100  
0
2
4
6
10  
8
12  
0.1  
10  
REVERSE VOLTAGE (V)  
100  
1
4
AVERAGE FORWARD CURRENT(A)  
FIG.5-TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.6-MAXIMUM FORWARD  
CURRENT DERATING CURVE  
12  
10  
8
100  
10  
TM=121(1)  
TA=150  
TA=125  
TA=25(2)  
6
4
2
TA=100  
TA=25  
1
0
0
2
5
75  
100  
125  
150 175  
TM-MOUNT TEMPERATURE  
0.1  
NOTE: (1) Mounted on 30 mm x 30 mm aluminum PCB; TM  
0
0.1  
0.3  
0.4 0.5  
0.6  
0.7  
0.2  
measured at the terminal of cathode band (RθJM = 4 °C/W)  
(2) Free air, mounted on recommended copper pad area  
(RθJA = 75 °C/W)  
INSTANTANEOUS FORWARD  
VOLTAGE(V)  
REV. 3, 06-Arp-2012  

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