SBT110S [HY]

SURFACE MOUNT BARRIER BRIDGE RECTIFIERS; 表面安装阻隔桥式整流器
SBT110S
型号: SBT110S
厂家: HY ELECTRONIC CORP.    HY ELECTRONIC CORP.
描述:

SURFACE MOUNT BARRIER BRIDGE RECTIFIERS
表面安装阻隔桥式整流器

文件: 总2页 (文件大小:45K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SBT110S  
SURFACE MOUNT SCHOTTKY BARRIER  
BRIDGE RECTIFIERS  
REVERSE VOLTAGE - 100 Volts  
FORWARD CURRENT - 1.0 Ampere  
BTS  
FEATURES  
.071(1.8)  
.055(1.4)  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O  
C0.5  
Flame Retardant Epoxy Molding Compound.  
Exceeds environmental standards of MIL-S-19500/228  
Low power loss, high efficiency.  
- +  
~ ~  
Low forward voltage,high efficiency.  
High surge capacity.  
Super fast recovery times,high voltage.  
Epitaxial chip construction.  
.030(0.75)  
.018(0.45)  
.014(.35)  
.006(.15)  
.106(2.7)  
.09(2.3)  
Lead free in comply with EU RoHS 2002/95/EC directives.  
.197(5.0)  
.181(4.6)  
MECHANICAL DATA  
Polarity:Symbol molded on body  
Mounting position :Any  
.063(1.6)  
.047(1.2)  
.008(0.2)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SBT110S  
UNIT  
SYMBOL  
CHARACTERISTICS  
100  
70  
V
V
V
A
Maximum Recurrent Peak Reverse Voltage  
VRRM  
VRMS  
VDC  
Maximum RMS Voltage  
100  
1
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
Peak Forward Surge Current  
@TC=50 ꢁ  
I(AV)  
IFSM  
30  
A
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load(JEDEC Method)  
0.85  
V
Peak Forward Voltage at 1.0A DC  
VF  
IR  
0.5  
50  
Maximum DC Reverse Current  
at Rated DC Bolcking Voltage  
@TJ=25ꢁ  
@TJ=125ꢁ  
mA  
85  
pF  
/W  
Typical Junction Capacitance Per Element (Note1)  
Typical Thermal Resistance (Note3)  
Operating Temperature Range  
CJ  
RθJA  
TJ  
85  
-55 to +150  
-55 to +150  
Storage Temperature Range  
TSTG  
NOTES:1.Measured at1.0MHz and applied reverse voltage of 4.0V DC.  
REV. 1, 08-Nov-2012  
RATING AND CHARACTERTIC CURVES  
SBT110S  
FIG.2 - MAXIMUM NON-REPETITIVE  
SURGE CURRENT  
FIG.1-FORWARD CURRENT DERATING CURVE  
1.0  
40  
30  
0.8  
0.6  
0.4  
20  
MOUNTED ON BOARD  
0.2  
10  
0
PULSE WIDTH 8.3ms  
SINGLE HALF-SINE-WAVE  
(JEDEC METHOD)  
SINGLE PHASE HALF WAVE 60Hz  
RESISTIVE OR INDUCTIVE LOAD  
0.1  
20  
100  
160  
40  
60  
80  
120  
140  
1
2
5
10  
20  
50  
100  
CASE TEMPERATURE, ꢁ  
NUMBER OF CYCLES AT 60Hz  
FIG.3-TYPICAL REVERSE CHARACTERISTICS  
FIG.4-TYPICAL FORWARD CHARACTERISTICS  
100  
10  
10  
TJ=125°C  
1.0  
0.1  
1.0  
0.1  
TJ=25°C  
TJ=25°C  
PULSE WIDTH:300us  
2% DUTY CYCLE  
0.01  
20  
40  
120  
0
60  
80  
100  
140  
0.01  
0
0.2  
INSTANTANEOUS FORWARD VOLTAGE,VOLTS  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6 1.8  
PERCENT OF RATED PEAK REVERSE VOLTAGE(%)  
REV. 1, 08-Nov-2012  

相关型号:

SBT120AN

Rectifier Diode
MINI

SBT120AP

Rectifier Diode,
MINI

SBT150-04J

Schottky Barrier Diode (Twin Type · Cathode Common) 40V, 15A Rectifier
SANYO

SBT150-04Y

Schottky Barrier Diode (Twin Type · Cathode Common) 40V, 15A Rectifier
SANYO

SBT150-06J

Schottky Barrier Diode (Twin Type · Cathode Common) 60V, 15A Rectifier
SANYO

SBT150-06JS

Schottky Barrier Diode (Twin Type - Cathode Common) 60V, 15A Rectifier
SANYO

SBT150-10J

100V, 15A 镖椎崛憝
SANYO

SBT150-10JS

Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 15A Rectifier
SANYO

SBT150-10LS

Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 15A Rectifier
SANYO

SBT150-10Y

Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 15A Rectifier
SANYO

SBT150AL

Rectifier Diode
MINI

SBT150AN

Rectifier Diode,
MINI