SS110B [HY]
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS; 表面贴装肖特基二极管
| 型号： | SS110B |
| 厂家： | 
HY ELECTRONIC CORP. |
| 描述： | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS12B thru SS110B
SURFACE MOUNT
REVERSE VOLTAGE - 20 to 100 Volts
FORWARD CURRENT - 1.0 Amperes
SCHOTTKY BARRIER RECTIFIERS
FEATURES
SMB
●For surface mounted applications
●Metal-Semiconductor junction with guarding
●Epitaxial construction
●Very low forward votage drop
.083(2.11)
.075(1.91)
.155(3.94)
.130(3.30)
●High current capability
●Plastic material has UL flammability
classification 94V-0
.185(4.70)
.160(4.06)
●For use in lowvoltage, high frequency inverters,
free wheeling, and polarity protection applications.
.012(.305)
.006(.152)
.096(2.44)
.084(2.13)
MECHANICAL DATA
●Case： Molded Plastic
.008(.203)
.002(.051)
.060(1.52)
.030(0.76)
●Polarity:Color band denotes cathode
●Weight: 0.003 ounces,0.093 grams
●Mounting position: Any
.220(5.59)
.200(5.08)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SYMBOL SS12B
SS13B
30
SS14B
40
SS15B
50
SS16B
60
SS18B SS110B
UNIT
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
20
14
20
80
56
80
100
70
V
V
V
21
28
35
42
Maximum DC Blocking Voltage
Maximum Average Forward
30
40
50
60
100
I(AV)
1.0
A
Rectified Current
@TL=100 ℃
Peak Forward Surage Current
IFSM
40
A
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load (JEDEC Method)
Maximum Forward Voltage at 1.0A DC
0.70
0.85
VF
IR
0.45
0.55
0.6
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25℃
1.0
10
mA
@TJ=100℃
110
Typical Junction Capacitance (Note1)
CJ
RθJL
TJ
pF
℃/W
℃
20
Typical Thermal Resistance (Note2)
-55 to + 150
-55 to + 150
Operating Temperature Range
Storage Temperature Range
TSTG
℃
NOTES:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2.Thermal resistance junction to lead.
~ 151 ~
RATING AND CHARACTERTIC CURVES
SS12B thru SS110B
FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT
FIG. 1 - FORWARD CURRENT DERATING CURVE
1.00
40
30
0.75
20
0.5
SINGLE PHASE
HALF WAVE 60Hz
0.25
10
0
PULSE WIDTH 8.3mS
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
RESISTIVE OR
INDUCTIVE LOAD
0
100
1
2
5
10
20
50
25
50
75
LEAD TEMPERATURE ℃
FIG.4-TYPICAL FORWARD CHARACTERISTICS
100
125
150
175
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
20
10
1000
SS13B
SS12B
SS14B
100
SS15B-SS16B
SS18B-SS110B
1.0
0.1
TJ = 25°C
TJ=25℃ f=1MHZ
PULSE WIDTH 300us
1% DUTY CYCLE
10
100
0.1
10.0
REVERSE VOLTAGE,VOLTS
1.0
4.0
0.9 1.1
1.5
0
0.1 0.3 0.5 0.7
1.3
1.7
INSTANTANEOUS FORWARD VOLTAGE, (VOLTS)
FIG.5-TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=125℃
TJ=100℃
1.0
0.1
TJ=25℃
0.01
0.001
120
140
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
~ 152 ~
相关型号：
SS110E-TP
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SMAE, 2 PIN
MCC
SS110FL-TP
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-221AC, SMA-FL, 2 PIN
MCC
SS110FL-TP-HF
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-221AC, SMA-FL, 2 PIN
MCC
©2020 ICPDF网 联系我们和版权申明